JPS6364041U - - Google Patents
Info
- Publication number
- JPS6364041U JPS6364041U JP15892886U JP15892886U JPS6364041U JP S6364041 U JPS6364041 U JP S6364041U JP 15892886 U JP15892886 U JP 15892886U JP 15892886 U JP15892886 U JP 15892886U JP S6364041 U JPS6364041 U JP S6364041U
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- conductivity type
- layer region
- conductive wiring
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図ａ，ｂは本考案の一実施例で、第１図ｂ
は平面図、第１図ａは第１図ｂ中―′におけ
る断面図をそれぞれ示し、第２図は従来例を示す
。 １１，１２……シリコン基板、１２，２２……
絶縁膜、１３，２３……配線層、１４……不純物
拡散層、Ｃ……寄生容量を示す。
は平面図、第１図ａは第１図ｂ中―′におけ
る断面図をそれぞれ示し、第２図は従来例を示す
。 １１，１２……シリコン基板、１２，２２……
絶縁膜、１３，２３……配線層、１４……不純物
拡散層、Ｃ……寄生容量を示す。
Claims (1)
- 一導電型半導体基板一表面上に絶縁膜を介して
導電性配線が形成された半導体装置において、該
導電性配線下の前記半導体基板表面に他導電型の
不純物拡散層領域を有し、該不純物拡散層領域は
電位的に浮遊接点であることを特徴とする半導体
装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986158928U JP2526536Y2 (ja) | 1986-10-16 | 1986-10-16 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986158928U JP2526536Y2 (ja) | 1986-10-16 | 1986-10-16 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6364041U true JPS6364041U (ja) | 1988-04-27 |
| JP2526536Y2 JP2526536Y2 (ja) | 1997-02-19 |
Family
ID=31082880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986158928U Expired - Lifetime JP2526536Y2 (ja) | 1986-10-16 | 1986-10-16 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2526536Y2 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH021975A (ja) * | 1988-06-10 | 1990-01-08 | Nec Corp | マスタースライス型半導体装置 |
| JP2015152457A (ja) * | 2014-02-14 | 2015-08-24 | オムロン株式会社 | 静電容量型圧力センサ及び入力装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141977A (ja) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | Handotaisochi |
| JPS6112056A (ja) * | 1984-06-27 | 1986-01-20 | Toshiba Corp | 半導体装置 |
| JPS62287643A (ja) * | 1986-06-06 | 1987-12-14 | Fujitsu Ltd | 半導体装置 |
-
1986
- 1986-10-16 JP JP1986158928U patent/JP2526536Y2/ja not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141977A (ja) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | Handotaisochi |
| JPS6112056A (ja) * | 1984-06-27 | 1986-01-20 | Toshiba Corp | 半導体装置 |
| JPS62287643A (ja) * | 1986-06-06 | 1987-12-14 | Fujitsu Ltd | 半導体装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH021975A (ja) * | 1988-06-10 | 1990-01-08 | Nec Corp | マスタースライス型半導体装置 |
| JP2015152457A (ja) * | 2014-02-14 | 2015-08-24 | オムロン株式会社 | 静電容量型圧力センサ及び入力装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2526536Y2 (ja) | 1997-02-19 |