JPS6328503B2 - - Google Patents

Info

Publication number: JPS6328503B2
Authority: JP; Japan
Prior art keywords: phototransistor; transistor; impurity diffusion; region; diffusion region
Prior art date: 1982-03-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP57042103A

Other languages

English (en)

Japanese (ja)

Other versions

JPS58159384A (ja

Inventor

Toshuki Nagashima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-03-17

Filing date

1982-03-17

Publication date

1988-06-08

1982-03-17 Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd

1982-03-17 Priority to JP57042103A priority Critical patent/JPS58159384A/ja

1983-09-21 Publication of JPS58159384A publication Critical patent/JPS58159384A/ja

1988-06-08 Publication of JPS6328503B2 publication Critical patent/JPS6328503B2/ja

Status Granted legal-status Critical Current

Links

238000009792 diffusion process Methods 0.000 claims description 16
239000012535 impurity Substances 0.000 claims description 13
239000004065 semiconductor Substances 0.000 claims 2
239000000758 substrate Substances 0.000 claims 2
238000000034 method Methods 0.000 claims 1
238000010586 diagram Methods 0.000 description 5
238000006243 chemical reaction Methods 0.000 description 2
230000007423 decrease Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
230000003071 parasitic effect Effects 0.000 description 2
239000012808 vapor phase Substances 0.000 description 2
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
230000003321 amplification Effects 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
238000005286 illumination Methods 0.000 description 1
238000002955 isolation Methods 0.000 description 1
230000007257 malfunction Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Light Receiving Elements (AREA)

JP57042103A 1982-03-17 1982-03-17 ダ−リントンフオトトランジスタ Granted JPS58159384A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP57042103A JPS58159384A (ja)	1982-03-17	1982-03-17	ダ−リントンフオトトランジスタ

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP57042103A JPS58159384A (ja)	1982-03-17	1982-03-17	ダ−リントンフオトトランジスタ

Publications (2)

Publication Number	Publication Date
JPS58159384A JPS58159384A (ja)	1983-09-21
JPS6328503B2 true JPS6328503B2 (ko)	1988-06-08

Family

ID=12626638

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP57042103A Granted JPS58159384A (ja)	1982-03-17	1982-03-17	ダ−リントンフオトトランジスタ

Country Status (1)

Country	Link
JP (1)	JPS58159384A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2596957B2 (ja) *	1988-01-08	1997-04-02	シャープ株式会社	光結合素子
US5969399A (en) *	1998-05-19	1999-10-19	Hewlett-Packard Company	High gain current mode photo-sensor
KR20020084428A (ko) *	2001-05-02	2002-11-09	송정근	이종접합 광트랜지스터와 이종접합 쌍극자 트랜지스터로구성된 광전소자 및 그 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5186989A (ko) *	1975-01-29	1976-07-30	Nippon Electric Co
JPS5310434A (en) *	1976-07-16	1978-01-30	Fujitsu Ltd	Transfer medium

1982
- 1982-03-17 JP JP57042103A patent/JPS58159384A/ja active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5186989A (ko) *	1975-01-29	1976-07-30	Nippon Electric Co
JPS5310434A (en) *	1976-07-16	1978-01-30	Fujitsu Ltd	Transfer medium

Also Published As

Publication number	Publication date
JPS58159384A (ja)	1983-09-21

Publication	Publication Date	Title
JPH0173953U (ko)	1989-05-18
JPS6328503B2 (ko)	1988-06-08
GB2061655A (en)	1981-05-13	Amplifier protection
EP0080254A2 (en)	1983-06-01	Transistor-transistor logic circuit
EP0346978B1 (en)	1994-01-19	Integrated current-mirror arrangement comprising vertical transistors
JPS5823749B2 (ja)	1983-05-17	モノリシック集積電流源
US3932879A (en)	1976-01-13	Bilaterally conducting zener diode and circuit therefor
JPS58193B2 (ja)	1983-01-05	半導体光検波装置
JPH10284752A (ja)	1998-10-23	光センサ
JPS60107858A (ja)	1985-06-13	ダ−リントンフオトトランジスタ
JPS59189665A (ja)	1984-10-27	半導体装置
JP3553715B2 (ja)	2004-08-11	光半導体装置
JPS5562762A (en)	1980-05-12	Semiconductor device
JP3135363B2 (ja)	2001-02-13	半導体集積回路
JPH0568868B2 (ko)	1993-09-29
JP2606663Y2 (ja)	2000-12-18	半導体集積回路装置
JPH0528812Y2 (ko)	1993-07-23
JPS6141247Y2 (ko)	1986-11-25
JPS5672584A (en)	1981-06-16	Solid-state image pickup device
JPH0173954U (ko)	1989-05-18
JPS61268078A (ja)	1986-11-27	半導体フオトセンサ
JPH0336308B2 (ko)	1991-05-31
JPH06163825A (ja)	1994-06-10	半導体集積回路
JPS60263502A (ja)	1985-12-27	半導体集積回路装置
JPS63229855A (ja)	1988-09-26	半導体集積回路