US5969399A - High gain current mode photo-sensor - Google Patents
High gain current mode photo-sensor Download PDFInfo
- Publication number
- US5969399A US5969399A US09/080,996 US8099698A US5969399A US 5969399 A US5969399 A US 5969399A US 8099698 A US8099698 A US 8099698A US 5969399 A US5969399 A US 5969399A
- Authority
- US
- United States
- Prior art keywords
- type
- well
- doping
- vertical transistor
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000003321 amplification Effects 0.000 abstract description 3
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Definitions
- the above-described embodiment of the present invention utilizes two vertical PNP transistors to provide a large gain in a small amount of silicon space. It will be obvious to those skilled in the art from the preceding discussion that additional vertical transistors could be similarly connected to provide additional gain if needed. Similarly, if the light signal is sufficiently intense, a single vertical PNP transistor could be utilized.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (4)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/080,996 US5969399A (en) | 1998-05-19 | 1998-05-19 | High gain current mode photo-sensor |
EP99303245A EP0959502B1 (en) | 1998-05-19 | 1999-04-27 | Photodetector |
DE69937588T DE69937588T2 (en) | 1998-05-19 | 1999-04-27 | photodetector |
JP11132736A JPH11345995A (en) | 1998-05-19 | 1999-05-13 | Photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/080,996 US5969399A (en) | 1998-05-19 | 1998-05-19 | High gain current mode photo-sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
US5969399A true US5969399A (en) | 1999-10-19 |
Family
ID=22161002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/080,996 Expired - Fee Related US5969399A (en) | 1998-05-19 | 1998-05-19 | High gain current mode photo-sensor |
Country Status (4)
Country | Link |
---|---|
US (1) | US5969399A (en) |
EP (1) | EP0959502B1 (en) |
JP (1) | JPH11345995A (en) |
DE (1) | DE69937588T2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8664580B2 (en) | 2011-02-23 | 2014-03-04 | Sharp Kabushiki Kaisha | Optical sensor and electronic equipment |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2948815A (en) * | 1955-02-18 | 1960-08-09 | Philips Corp | Circuit arrangement comprising a phototransistor |
US3748546A (en) * | 1969-05-12 | 1973-07-24 | Signetics Corp | Photosensitive device and array |
US4107721A (en) * | 1977-01-26 | 1978-08-15 | Bell Telephone Laboratories, Incorporated | Phototransistor |
US5126814A (en) * | 1986-12-09 | 1992-06-30 | Tokyo, Japan Canon Kabushiki Kaisha | Photoelectric converter with doped capacitor region |
US5252851A (en) * | 1991-01-30 | 1993-10-12 | Sanyo Electric Co., Ltd. | Semiconductor integrated circuit with photo diode |
US5382824A (en) * | 1992-07-16 | 1995-01-17 | Landis & Gyr Business Support Ag | Integrated circuit with an integrated color-selective photo diode and an amplifier following the photo-diode |
US5767538A (en) * | 1995-06-26 | 1998-06-16 | Burr-Brown Corporation | Integrated photodiode/transimpedance amplifier |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58159384A (en) * | 1982-03-17 | 1983-09-21 | Toshiba Corp | Darlington photo-transistor |
JPS60107858A (en) * | 1983-11-17 | 1985-06-13 | Toshiba Corp | Darlington photo transistor |
US4658282A (en) * | 1984-06-28 | 1987-04-14 | Honeywell Inc. | Semiconductor apparatus |
JPS63128666A (en) * | 1986-11-19 | 1988-06-01 | Canon Inc | Photoelectric converter |
JPH06260674A (en) * | 1993-03-05 | 1994-09-16 | Sharp Corp | Phototransistor |
JP3192366B2 (en) * | 1996-01-31 | 2001-07-23 | シャープ株式会社 | Light receiving element and method of manufacturing the same |
-
1998
- 1998-05-19 US US09/080,996 patent/US5969399A/en not_active Expired - Fee Related
-
1999
- 1999-04-27 EP EP99303245A patent/EP0959502B1/en not_active Expired - Lifetime
- 1999-04-27 DE DE69937588T patent/DE69937588T2/en not_active Expired - Lifetime
- 1999-05-13 JP JP11132736A patent/JPH11345995A/en not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2948815A (en) * | 1955-02-18 | 1960-08-09 | Philips Corp | Circuit arrangement comprising a phototransistor |
US3748546A (en) * | 1969-05-12 | 1973-07-24 | Signetics Corp | Photosensitive device and array |
US4107721A (en) * | 1977-01-26 | 1978-08-15 | Bell Telephone Laboratories, Incorporated | Phototransistor |
US5126814A (en) * | 1986-12-09 | 1992-06-30 | Tokyo, Japan Canon Kabushiki Kaisha | Photoelectric converter with doped capacitor region |
US5252851A (en) * | 1991-01-30 | 1993-10-12 | Sanyo Electric Co., Ltd. | Semiconductor integrated circuit with photo diode |
US5382824A (en) * | 1992-07-16 | 1995-01-17 | Landis & Gyr Business Support Ag | Integrated circuit with an integrated color-selective photo diode and an amplifier following the photo-diode |
US5767538A (en) * | 1995-06-26 | 1998-06-16 | Burr-Brown Corporation | Integrated photodiode/transimpedance amplifier |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8664580B2 (en) | 2011-02-23 | 2014-03-04 | Sharp Kabushiki Kaisha | Optical sensor and electronic equipment |
Also Published As
Publication number | Publication date |
---|---|
DE69937588T2 (en) | 2008-10-23 |
EP0959502A2 (en) | 1999-11-24 |
DE69937588D1 (en) | 2008-01-03 |
JPH11345995A (en) | 1999-12-14 |
EP0959502A3 (en) | 2001-08-08 |
EP0959502B1 (en) | 2007-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HEWLETT-PACKARD COMPANY, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PERNER, FREDERICK A.;REEL/FRAME:009311/0550 Effective date: 19980514 |
|
AS | Assignment |
Owner name: HEWLETT-PACKARD COMPANY, A DELAWARE CORPORATION, C Free format text: MERGER;ASSIGNOR:HEWLETT-PACKARD COMPANY, A CALIFORNIA CORPORATION;REEL/FRAME:010841/0649 Effective date: 19980520 |
|
AS | Assignment |
Owner name: AGILENT TECHNOLOGIES INC, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HEWLETT-PACKARD COMPANY;REEL/FRAME:010977/0540 Effective date: 19991101 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP PTE. LTD., SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AGILENT TECHNOLOGIES, INC.;REEL/FRAME:017207/0020 Effective date: 20051201 |
|
AS | Assignment |
Owner name: AVAGO TECHNOLOGIES SENSOR IP PTE. LTD.,SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AVAGO TECHNOLOGIES IMAGING IP (SINGAPORE) PTE. LTD.;REEL/FRAME:017675/0691 Effective date: 20060430 Owner name: AVAGO TECHNOLOGIES IMAGING IP (SINGAPORE) PTE. LTD Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:017675/0738 Effective date: 20060127 Owner name: AVAGO TECHNOLOGIES SENSOR IP PTE. LTD., SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AVAGO TECHNOLOGIES IMAGING IP (SINGAPORE) PTE. LTD.;REEL/FRAME:017675/0691 Effective date: 20060430 |
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AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AVAGO TECHNOLOGIES SENSOR IP PTE. LTD.;REEL/FRAME:018545/0413 Effective date: 20061110 |
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FPAY | Fee payment |
Year of fee payment: 8 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20111019 |
|
AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 017207 FRAME 0020. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:AGILENT TECHNOLOGIES, INC.;REEL/FRAME:038633/0001 Effective date: 20051201 |