JPS5562762A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5562762A JPS5562762A JP13548378A JP13548378A JPS5562762A JP S5562762 A JPS5562762 A JP S5562762A JP 13548378 A JP13548378 A JP 13548378A JP 13548378 A JP13548378 A JP 13548378A JP S5562762 A JPS5562762 A JP S5562762A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- collector
- transistor
- emitter
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To advantageously design a semiconductor device by approaching the current amplification factor, saturated resistance and maximum current or the like characteristics of a PNP transistor to an NPN transistor in a complementary integrated circuit (IC).
CONSTITUTION: A substrate 32 superimposed with N-type epitaxial layers 26, 31 on a P-type silicon layer 21 is isolated via P-type layers 25a∼25c, in a PNP transistor an emitter is formed by a layer 34, a base is by a layer 37, and a collector by a buried layer 24, and in an NPN transistor 40 an emitter is formed by a layer 38, a base by a buried layer 39, and a collector by layer 41 outside the layers 29, 33. Since the buried layer 30 of high density is interposed between the layers 26 and 31 in a transistor 39, it is difficult to punch through the emitter and the collector. The layer 30 is separated from the buried layer 24 to enhance the dielectric strength between the emitter and the collector thereof. Since a high density layer 28 is provided regardless of the base 29 of the NPN transistor 40 between the buried layer 24 and the collector electrode 42C, its saturated resistance is decreased for large current. Thus, the characteristics of both the transistor can approach to each other.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13548378A JPS5562762A (en) | 1978-11-02 | 1978-11-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13548378A JPS5562762A (en) | 1978-11-02 | 1978-11-02 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5562762A true JPS5562762A (en) | 1980-05-12 |
Family
ID=15152765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13548378A Pending JPS5562762A (en) | 1978-11-02 | 1978-11-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562762A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4458158A (en) * | 1979-03-12 | 1984-07-03 | Sprague Electric Company | IC Including small signal and power devices |
JP2007180472A (en) * | 2005-11-30 | 2007-07-12 | Sanyo Electric Co Ltd | Semiconductor device and its fabrication process |
US7619299B2 (en) * | 2005-11-30 | 2009-11-17 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
-
1978
- 1978-11-02 JP JP13548378A patent/JPS5562762A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4458158A (en) * | 1979-03-12 | 1984-07-03 | Sprague Electric Company | IC Including small signal and power devices |
JP2007180472A (en) * | 2005-11-30 | 2007-07-12 | Sanyo Electric Co Ltd | Semiconductor device and its fabrication process |
US7619299B2 (en) * | 2005-11-30 | 2009-11-17 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
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