JPS63271990A - Manufacture of semiconductor diffraction grating - Google Patents
Manufacture of semiconductor diffraction gratingInfo
- Publication number
- JPS63271990A JPS63271990A JP62105142A JP10514287A JPS63271990A JP S63271990 A JPS63271990 A JP S63271990A JP 62105142 A JP62105142 A JP 62105142A JP 10514287 A JP10514287 A JP 10514287A JP S63271990 A JPS63271990 A JP S63271990A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor
- diffraction grating
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000012808 vapor phase Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910007159 Si(CH3)4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光通信分野、光ディスク関連分野に有用で、
特に波長安定化光源や光ＩＣ用光源である分布帰還型半
導体レーザおよびブラック反射帰還型半導体レーザ用の
回折格子として利用できる半導体回折格子の製造方法に
関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention is useful in the optical communication field, optical disk related field,
In particular, the present invention relates to a method of manufacturing a semiconductor diffraction grating that can be used as a diffraction grating for a distributed feedback semiconductor laser and a black reflection feedback semiconductor laser, which are wavelength stabilized light sources and light sources for optical ICs.
従来の技術
近年、半導体し〒ザの発振波長安定化のため、半導体レ
ーザ単体と半導体回折格子をモノリシックに一体化した
素子すなわち分布帰還型半導体レーザあるいはブラック
反射帰還型半導体レーザの研究開発が各所で活発に行わ
れている。Conventional technology In recent years, in order to stabilize the oscillation wavelength of semiconductor lasers, research and development has been conducted in various places on devices that monolithically integrate a semiconductor laser and a semiconductor diffraction grating, that is, distributed feedback semiconductor lasers or black reflective feedback semiconductor lasers. It is being actively carried out.
従来この半導体回折格子は例えば第３図に示されている
ようなプロセスで製造されていた。Conventionally, this semiconductor diffraction grating has been manufactured by a process as shown in FIG. 3, for example.
まず、半導体基板上にレジスト膜を塗布し、次に第３図
に示すような光学系配置によるレーザ光の二光束干渉露
光法により、レジスト膜に周期的なストライプ状のパタ
ーンを形成する。なお第３図で、１はＧａＡｓ 、 １
ｎＰ等の半導体結晶基板、２はレジスト膜、３はレー
ザ光発生装置、４はビームエキスパンダー、６はハーフ
ミラ−１６はミラー、７はレーザ光である。その後、ス
トライプ状パターンが形成されたレジスト膜２をマスク
にして、半導体結晶基板を化学的にエツチングし、半導
体基板表面に周期的な凹凸を形成して、半導体回折格子
を製造していた。First, a resist film is applied onto a semiconductor substrate, and then a periodic striped pattern is formed on the resist film by a two-beam interference exposure method using a laser beam using an optical system arrangement as shown in FIG. In Fig. 3, 1 is GaAs, 1
A semiconductor crystal substrate such as nP, 2 a resist film, 3 a laser beam generator, 4 a beam expander, 6 a half mirror, 16 a mirror, and 7 a laser beam. Thereafter, the semiconductor crystal substrate was chemically etched using the resist film 2 on which the striped pattern was formed as a mask to form periodic irregularities on the surface of the semiconductor substrate, thereby manufacturing a semiconductor diffraction grating.
発明が解決しようとする問題点
しかしながら上記の様な方法で半導体回折格子を製造す
る場合、半導体基板表面上の凹凸を化学的エツチングで
形成するため、凹凸の変化が大きくとれなく、回折効率
が低減するという問題点を有していた。また分布帰還型
半導体レーザ、ブラッグ反射帰還型半導体レーザおよび
光ＩＣ等にその半導体回折格子を用いる場合は、回折格
子上に半導体結晶をエピタキシャル成長させる必要があ
る。その場合、半導体基板表面に凹凸を形成した後のレ
ジスト除去が不完全となる場合が多々あり、その結果回
折格子上へのエピタキシャル成長が困難となり、また回
折格子表面がレジスト除去時にダメージを受けたり、あ
るいは空気中にさらされるためその表面に酸化膜が形成
されたりして、回折格子上のエピタキシャル層の結晶性
が低下するという問題点を有していた。また特に液相エ
ピタキシャル成長法により、回折格子上にエピタキシャ
ル成長する場合はメルトバックにより回折格子が一部溶
解し、この結果凹凸の変化が減少して回折効率が低減す
るという問題点を有していた。Problems to be Solved by the Invention However, when semiconductor diffraction gratings are manufactured using the method described above, the unevenness on the surface of the semiconductor substrate is formed by chemical etching, which makes it difficult to make large changes in the unevenness, resulting in a decrease in diffraction efficiency. There was a problem with this. Further, when the semiconductor diffraction grating is used in a distributed feedback semiconductor laser, a Bragg reflective feedback semiconductor laser, an optical IC, etc., it is necessary to epitaxially grow a semiconductor crystal on the diffraction grating. In that case, the removal of the resist after forming irregularities on the surface of the semiconductor substrate is often incomplete, and as a result, epitaxial growth on the diffraction grating becomes difficult, and the surface of the diffraction grating is damaged during the removal of the resist. Alternatively, since it is exposed to air, an oxide film may be formed on its surface, resulting in a problem in that the crystallinity of the epitaxial layer on the diffraction grating is reduced. Furthermore, when epitaxial growth is performed on a diffraction grating using a liquid phase epitaxial growth method in particular, there is a problem in that the diffraction grating is partially dissolved due to meltback, and as a result, changes in unevenness are reduced and diffraction efficiency is reduced.
問題点を解決するための手段
本発明は、上記した従来の問題点を解消するため、基板
表面に二光束レーザ干渉光を照射しながら通常のエピタ
キシャル成長例えば有機金属気相法による結晶成長を行
うことにより、半導体回折格子を製造する方法である。Means for Solving the Problems The present invention solves the above-mentioned conventional problems by performing normal epitaxial growth, for example, crystal growth using an organometallic vapor phase method, while irradiating the substrate surface with two-beam laser interference light. This is a method of manufacturing a semiconductor diffraction grating.
作 用 この技術的手段による作用は次のようになる。For production The effect of this technical means is as follows.
有機金属気相法によるエピタキシャル成長中にレーザ光
を基板表面に照射することにより、レーザ光の照射部の
み組成、キャリア濃度、伝導型を変化させることが可能
であり、その変化の大きさは照射するレーザのパワーに
ほぼ比例する。By irradiating the substrate surface with laser light during epitaxial growth using the organometallic vapor phase method, it is possible to change the composition, carrier concentration, and conductivity type only in the area irradiated with the laser light, and the magnitude of the change depends on the irradiation. Almost proportional to laser power.
レーザニ光束干渉光を照射した場合は、レーザ光が交互
に周期的に基板上に照射されるため、組成。When irradiating with laser beam interference light, the laser beams are alternately and periodically irradiated onto the substrate, which changes the composition.
伝導型、キャリア濃度の異なる領域が交互に周期的に形
成されたエピタキシャル層が成長される。An epitaxial layer is grown in which regions having different conductivity types and carrier concentrations are alternately and periodically formed.
なお、レーザニ光束干渉光の光強度分布は正弦波の２乗
分布になるため、組成、伝導型、キャリア濃度分布も正
弦波分布となる。すなわち、これらのエピタキシャル層
の構造が半導体回折格子としての機能を有する。Note that since the light intensity distribution of the laser beam interference light is a square distribution of a sine wave, the composition, conduction type, and carrier concentration distribution also become a sine wave distribution. That is, the structure of these epitaxial layers has a function as a semiconductor diffraction grating.
この場合光の作用によって、組成、伝導型、キャリア濃
度の異なる領域が形成されるためレーザ照射部と非照射
部との界面は急峻であり、回折効率は従来よりも高くな
る。In this case, regions with different compositions, conductivity types, and carrier concentrations are formed by the action of light, so the interface between the laser irradiated part and the non-irradiated part is steep, and the diffraction efficiency is higher than in the conventional case.
実施例
本発明による半導体回折格子の製造方法は以下に述べる
実施例によって実現される。Embodiments The method for manufacturing a semiconductor diffraction grating according to the present invention is realized by the embodiments described below.
第１図に、半導体回折格子の作製に用いる装置、すなわ
ち有機金属気相成長法の結晶成長室にレーザ干渉光を導
入した場合の模式図を示す。８は結晶成長室、９は結晶
成長室のレーザ光入射窓、１０．１１は原料ガスの導入
口、１２は排気口、１３は高周波コイル、１４はカーボ
ン製サセプターである。なおレーザ干渉光を形成するた
めの光学系は従来と同じものである。FIG. 1 shows a schematic diagram of a case where laser interference light is introduced into an apparatus used for manufacturing a semiconductor diffraction grating, that is, a crystal growth chamber for metal organic vapor phase epitaxy. 8 is a crystal growth chamber, 9 is a laser beam entrance window of the crystal growth chamber, 10.11 is a source gas inlet, 12 is an exhaust port, 13 is a high frequency coil, and 14 is a carbon susceptor. Note that the optical system for forming laser interference light is the same as the conventional one.
この装置を用いて第２図に示すよりなＧ ａ Ａ ｔｓ
基板上に回折格子を作成する場合について以下に説明す
る。Using this device, more Ga Ats shown in Figure 2 can be obtained.
The case of creating a diffraction grating on a substrate will be described below.
この場合、Ｇ ａ 、 Ａｌ 、 Ａ ｓの原料ガスど
してそれぞれＧａ （ＣＨ３） ３．Ａｌ （ＣＨ３）
３． ＡｓＨ３を、ｎ型およびｐ型不純物原料として
それぞれＳ ｉ （ＣＨ３） ４゜ｚｎ（ＣＨ３）２を
、キャリアガスとしてＨ２を用いた。またレーザ光とし
てＡｒＦエキシマレーザ光（波長１ｓｓｎｍ）を用いた
。In this case, the raw material gases for Ga, Al, and As are Ga (CH3) 3. Al (CH3)
3. AsH3 was used as the n-type and p-type impurity raw materials, and S i (CH3) 4°zn(CH3)2 was used as the carrier gas. Furthermore, ArF excimer laser light (wavelength: 1 ssnm) was used as the laser light.
またこの場合、レーザ照射部と非照射部とで、それぞれ
組成、キャリア濃度、伝導型が異なる回折格子が考えら
れる。それぞれの場合の作成条件を次表にまとめる。Further, in this case, a diffraction grating can be considered in which the laser irradiated part and the non-irradiated part have different compositions, carrier concentrations, and conductivity types, respectively. The creation conditions for each case are summarized in the table below.
基 板 Ｇ ａ Ａ ｓ
成長温度 ７００℃７００１１ｍ ７００
℃成長圧力 １００Ｔｏｒｒ １００Ｔｏｒ
ｒ １００ＴｏｒｒＧａ（ＣＨ３）３供給量 ０．２
８ｓｃｃｍ ０．４ｓｃｃｍ ０．４ｓｃｃｍＡ
ｌ（ＣＨ３）３供給量 ０．１２ｓｃｃｍ−−ＡｓＨ３
供給量 １０１００５ｃ ２０ｓ＋ｃｃｍ
２０ｓｃｃｍＺ ｎ （ＣＨ，Ｉ）２供給量
６．２５Ｘ１０″ｍｃａｍＳｉ
（ＣＨ３）４供給量 ０．０１２ｓ＋ｃ
ｃｍ ０．０１２ｇｃ（Ｉｎ全Ｈ２流量 ５
ｓｄｍ ５ｓＪｍ ５ｓＪｍレーザ波
長 １９３ｎｍ １９３ｎｍ １
９３ｎｍ作製工程としては最初Ｇ ａ Ａ ｓ基板１を
結晶成長室内８のカーボン製サセプター１４上に設置す
る。Substrate GaAs
Growth temperature 700℃ 70011m 700
℃ growth pressure 100Torr 100Torr
r 100TorrGa(CH3)3 supply amount 0.2
8sccm 0.4sccm 0.4sccmA
l(CH3)3 supply amount 0.12sccm--AsH3
Supply amount 101005c 20s+ccm
20sccmZ n (CH,I)2 supply amount
6.25X10″mcamSi
(CH3)4 supply amount 0.012s+c
cm 0.012gc (In total H2 flow rate 5
sdm 5sJm 5sJm Laser wavelength 193nm 193nm 1
In the 93 nm manufacturing process, a GaAs substrate 1 is first placed on a carbon susceptor 14 in a crystal growth chamber 8.
次にＡ ｍ Ｈａを供給しながら成長温度まで基板を加
熱し、成長温度に達した後、組成の変化を周期的に形成
する場合はＧ ａ （ＣＨａ ） ３とＡＪ（ＣＨ３）
３とを、キャリア濃度の変化を周期的に形成する場合は
Ｇａ（ＣＨ３）３とｎ型不純物原料であるＳｉ（ＣＨ３
）４とを、伝導型の変化を周期的に形成する場合はＧａ
（ＣＨ３）３と５ｌ（ＣＨ３）４とｐ型不純物原料であ
るＺｎ（ＣＨ３）３とを供給し、それと同時ＫＡｒＦエ
キシマレーザニ光束干渉光（波長１９３ｎｍ）を基板１
に照射する。この状態で分間エピタキシャル成長し、組
成変化の場合はレーザ照射部でＡＩ Ｇ ａ Ａ ｓ層
、非照射部でＧａＡｓ層が、キャリア濃度変化の場合は
レーザ照射部でキャリア濃度〜１０１８ｃｍ−’のＧａ
Ａ１層、非照射部ではキャリア濃度〜１０３ のＧ
ａ Ａ ｓ層が、また伝導型変化の場合はレーザ照射部
でｎ型のＧ ａ Ａ ｓ層が、非照射部でｐ型のＧ ａ
Ａ・層を形成した。以上はＡｒＦエキシマレーザ照射
によってＡｌ（ＣＨ３）３゜Ｓｉ（ＣＨ３）４の分解効
率が増加すること、およびｚｎ（ＣＨ３）２はほとんど
レーザ照射の影響を受けないことを利用したものである
。Next, the substrate is heated to the growth temperature while supplying A m Ha, and after reaching the growth temperature, if the composition changes periodically, G a (CHa) 3 and AJ (CH3)
3, and when the carrier concentration changes periodically, Ga(CH3)3 and Si(CH3
) 4, and when the conduction type changes periodically, Ga
(CH3)3, 5l(CH3)4, and Zn(CH3)3, which is a p-type impurity raw material, are supplied, and at the same time, KArF excimer laser beam interference light (wavelength 193 nm) is applied to the substrate 1.
irradiate. In this state, epitaxial growth is performed for minutes, and in the case of a composition change, an AI Ga As layer is grown in the laser irradiated part, the GaAs layer is grown in the non-irradiated part, and in the case of a carrier concentration change, a Ga with a carrier concentration of ~1018 cm-' is grown in the laser irradiated part.
A1 layer, non-irradiated part has a carrier concentration of ~103G
In the case of a conductivity change, the aAs layer is an n-type GaAs layer in the laser irradiated area, and the p-type GaAs layer is in the non-irradiated area.
A layer was formed. The above method takes advantage of the fact that ArF excimer laser irradiation increases the decomposition efficiency of Al(CH3)3°Si(CH3)4 and that zn(CH3)2 is hardly affected by laser irradiation.
このようにして作成された半導体回折格子は、それぞれ
組成、キャリア濃度、伝導型がレーザ照射部と非照射部
との界面で急峻に変化していてまた凹凸の変化も従来の
化学エツチングの方法に比べて約６０％程度向上し高い
回折効率を有している。The semiconductor diffraction gratings created in this way have a steep change in composition, carrier concentration, and conductivity type at the interface between the laser irradiated and non-irradiated areas, and changes in the unevenness cannot be achieved using conventional chemical etching methods. It has a high diffraction efficiency, which is improved by about 60%.
以上述べた実施例においては、ＧａＡｔ５−ＡｌＧａＡ
ｓ系の半導体回折格子の製造方法について説明したが、
本発明よる半導体回折格子ＩｎＰ−ＩｎＧａＡｓＰ系、
ＡＩＧａＩｎＰ−ＧａＡｓ系、ＩｎＧａＡｓＰ−ＧａＡ
ｓ系。In the embodiments described above, GaAt5-AlGaA
The method for manufacturing an s-based semiconductor diffraction grating has been explained, but
Semiconductor diffraction grating InP-InGaAsP system according to the invention,
AIGaInP-GaAs system, InGaAsP-GaA
S-type.
他の■−ｖ族半導体結晶に用いることができるばかりで
なく、更にＺｎ５ｅ＋Ｚｎ５ｓｅ等のｎ−■族化合物半
導体結晶や混晶に用いることが可能である。さらに以上
述べた実施例ではエピタキシャル成長技術として有機金
属気相法を用いた場合であったが、ハイドライド気相エ
ピタキシ、ヤル成長法やクロライド気相エピタキシャル
成長法等の他の化合物半導体の気相エピタキシャル成長
法を用いた場合でも可能であるばかりでなく、分子線エ
ピタキシー法や有機金属分子線エピタキシー法を用いた
場合でも可能である。また以上述べた実施例 ・におい
ては、レーザとしてＡｒＦキシマレーザを用いた場合に
ついて説明したが、ＫｒＦやＸｅＦ等の他のガスを用い
たエキシマレーザやＣｏ２レーザ。It can be used not only for other (1)-v group semiconductor crystals, but also for n-2 group compound semiconductor crystals and mixed crystals such as Zn5e+Zn5se. Furthermore, in the embodiments described above, metal organic vapor phase method was used as the epitaxial growth technique, but other compound semiconductor vapor phase epitaxial growth methods such as hydride vapor phase epitaxy, jar growth method, and chloride vapor phase epitaxial growth method may also be used. It is possible not only when using a molecular beam epitaxy method or an organometallic molecular beam epitaxy method. Furthermore, in the above-described embodiments, the case where an ArF excimer laser was used as the laser was described, but an excimer laser or a Co2 laser using other gases such as KrF or XeF may also be used.
Ｈｅ−Ｃｄレーザ、 Ａ ｒレーザ等を用いた場合でも
、本発明は実現可能である。The present invention can be realized even when using a He-Cd laser, an Ar laser, or the like.
発明の効果
本発明にかかる半導体回折格子の製造方法は、通常のエ
ピタキシャル成長中にレーザニ光束干渉光を基板表面に
照射するだけという方法である。Effects of the Invention The method for manufacturing a semiconductor diffraction grating according to the present invention is a method in which the surface of a substrate is simply irradiated with laser beam interference light during normal epitaxial growth.
この半導体回折格子の回折効率は高く、また回折格子作
製時にその表面が空気中にさらされたり、従来のように
レジストが残留することがないので、回折格子上へのエ
ピタキシャル成長が何ら問題なく行うことができる。さ
らに、基板上での回折格子を作製する位置が、レーザ干
渉光を照射する位置および、そのレーザ干渉光の基板上
での大きさによって決めることができ、光ＩＣ等の作製
にはその利用価値は高い。このように本発明による製造
方法は、非常に実用的効果が大きい。The diffraction efficiency of this semiconductor diffraction grating is high, and since the surface of the diffraction grating is not exposed to the air during fabrication and no resist remains as in conventional methods, epitaxial growth on the diffraction grating can be performed without any problems. Can be done. Furthermore, the position at which the diffraction grating is fabricated on the substrate can be determined by the position at which the laser interference light is irradiated and the size of the laser interference light on the substrate. is expensive. As described above, the manufacturing method according to the present invention has a very large practical effect.
第１図は本発明の一実施例における半導体回折格子の製
造方法を説明するための模式図、第２図は本実施例の製
造方法を用いて作製した半導体回折格子の模式的断面図
、第３図は従来の代表的な半導体回折格子の製造方法を
説明するための模式図である。
１・・・・・・半導体結晶基板、２・・・・・・レジス
ト膜、３・・・・・・レーザ光発生装置、７・・・・・
・レーザ光、８・・・・・・結晶成長室、９・・・・・
・レーザ光導入窓。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第２
図
イー−Ｆ４（）＃晶基不に
２−−−レレ疋ド績FIG. 1 is a schematic diagram for explaining a method for manufacturing a semiconductor diffraction grating according to an embodiment of the present invention, FIG. FIG. 3 is a schematic diagram for explaining a typical conventional method of manufacturing a semiconductor diffraction grating. 1...Semiconductor crystal substrate, 2...Resist film, 3...Laser light generator, 7...
・Laser light, 8...Crystal growth chamber, 9...
・Laser light introduction window. Name of agent: Patent attorney Toshio Nakao and 1 other person 2nd
Figure E-F4 ()
Claims (4)
前記基板上に半導体層をエピタキシャル成長させてなる
半導体回折格子の製造方法。(1) While irradiating the substrate surface with two-beam laser interference light,
A method of manufacturing a semiconductor diffraction grating, which comprises epitaxially growing a semiconductor layer on the substrate.
ある特許請求の範囲第１項に記載の半導体回折格子の製
造方法。(2) The method for manufacturing a semiconductor diffraction grating according to claim 1, wherein the laser used is an Ar laser or an excimer laser.
特許請求の範囲第１項に記載の半導体回折格子の製造方
法。(3) The method for manufacturing a semiconductor diffraction grating according to claim 1, wherein the epitaxial growth is a metal organic vapor phase epitaxy method.
の範囲第１項に記載の半導体回折格子の製造方法。(4) The method for manufacturing a semiconductor diffraction grating according to claim 1, wherein the semiconductor is a III-V compound semiconductor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62105142A JPS63271990A (en) | 1987-04-28 | 1987-04-28 | Manufacture of semiconductor diffraction grating |
| US07/168,256 US4843031A (en) | 1987-03-17 | 1988-03-15 | Method of fabricating compound semiconductor laser using selective irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62105142A JPS63271990A (en) | 1987-04-28 | 1987-04-28 | Manufacture of semiconductor diffraction grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63271990A true JPS63271990A (en) | 1988-11-09 |
Family
ID=14399496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62105142A Pending JPS63271990A (en) | 1987-03-17 | 1987-04-28 | Manufacture of semiconductor diffraction grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63271990A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218709A (en) * | 1985-07-18 | 1987-01-27 | Fujitsu Ltd | Photovolatically growing method |
-
1987
- 1987-04-28 JP JP62105142A patent/JPS63271990A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218709A (en) * | 1985-07-18 | 1987-01-27 | Fujitsu Ltd | Photovolatically growing method |
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