JPH01120085A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPH01120085A JPH01120085A JP27760487A JP27760487A JPH01120085A JP H01120085 A JPH01120085 A JP H01120085A JP 27760487 A JP27760487 A JP 27760487A JP 27760487 A JP27760487 A JP 27760487A JP H01120085 A JPH01120085 A JP H01120085A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor laser
- semiconductor
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 239000002994 raw material Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000005253 cladding Methods 0.000 claims description 23
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 8
- 238000006303 photolysis reaction Methods 0.000 claims description 6
- 238000000197 pyrolysis Methods 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 claims 2
- 150000004820 halides Chemical class 0.000 claims 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 abstract description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 17
- 229910007159 Si(CH3)4 Inorganic materials 0.000 abstract description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 abstract description 2
- JRPGMCRJPQJYPE-UHFFFAOYSA-N zinc;carbanide Chemical compound [CH3-].[CH3-].[Zn+2] JRPGMCRJPQJYPE-UHFFFAOYSA-N 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015843 photosynthesis, light reaction Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 2
- 238000010581 sealed tube method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical class [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光通信分野、光計測分野、光情報処理分野の
光源として有用な半導体レーザの製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a semiconductor laser useful as a light source in the optical communication field, optical measurement field, and optical information processing field.
従来の技術
近年、様々な分野で半導体レーザの需要が高まり、各所
で研究開発が活発に行われている。これまで、数十種類
の半導体レーザの構造が提案され、そのなかのいくつか
は製造プロセスのなかで、Ｚｎに代表されるｐ型不純物
の拡散工程があシ、その良し悪しがレーザ特性全天きく
左右している。BACKGROUND OF THE INVENTION In recent years, demand for semiconductor lasers has increased in various fields, and research and development has been actively conducted in various places. Up to now, several dozen types of semiconductor laser structures have been proposed, and some of them involve a diffusion step of p-type impurities, typically Zn, during the manufacturing process, and the quality of this process depends on the overall laser characteristics. It affects my hearing.
例えば、活性層に平行方向のキャリアと光の閉じ込めの
だめの、Ｚｎ拡散ストライプや、またＴＴＳ（Ｔｒａｎ
ｓｖｅｒｓｅ Ｊｕｎｃｔｉｏｎ ５ｔｒｉｐｅ）型レ
ーザに代表される横方向注入型レーザのＺｎ拡散等であ
る。For example, Zn diffusion stripes for confining carriers and light parallel to the active layer, or TTS (Tran)
This includes Zn diffusion in a lateral injection type laser, typified by a sverse junction (5tripe) type laser.
従来、この拡散ストライプ型手導体レーザは、例えばＡ
ｌＧａＡａ／ＧａＡｓ系を例にとると、第４図に示すよ
うな工程で製造されていた。Conventionally, this diffused stripe type hand conductor laser has been used, for example, in A
Taking the lGaAa/GaAs system as an example, it was manufactured by the process shown in FIG.
（Ａ） ｎ型Ｇ ａ Ａ ｓ基板１上にｎ型ＡＩＧ＆
Ａ４（クラッド層）２ 、ＧａＡｓ層（活性層）３．ｐ
型ＡｌＧａＡｓ層（クラッド層）４．ｎ型Ｇ ａ Ａ
ｓ層（キャップ層）５を順次エピタキシャル成長する。(A) n-type AIG&
A4 (cladding layer) 2, GaAs layer (active layer) 3. p
Type AlGaAs layer (cladding layer)4. n-type G a A
S-layers (cap layers) 5 are epitaxially grown in sequence.
（Ｂ） ｎ型Ｇ ａ Ａ ｓ層５上にＳｉＯ２膜６を
堆積し、次にフォトリソグラフィー工程を用いて一部を
ストライプ状に化学的エツチングにより窓をあける。(B) A SiO2 film 6 is deposited on the n-type GaAs layer 5, and then a window is formed in a stripe pattern by chemical etching using a photolithography process.
（Ｃ”ｌ Ｚ ｎ Ａ ｌ！ ２を拡散源として石英
封管法によｐＺｎの選択拡散を行う。なおこの場合、Ｚ
ｎの拡散フロントは、ｐ型ＡｌＧａＡｇ層４中に位置さ
せる。(C”l Z n A l! Selective diffusion of pZn is carried out by the quartz sealed tube method using 2 as a diffusion source. In this case, Z
The n diffusion front is located in the p-type AlGaAg layer 4.
（Ｄ）ＳｉＯ２膜６を化学的エツチングによシ除去し、
次にｎ型Ｇ ａ Ａ ｓ層６上、およびｎ型Ｇ ａ Ａ
ｓ基板１の裏面にそれぞれＡ ｕ ／Ｚ ｎを用いて
ｐ型電極８、Ａ ｕ ／Ｇ ｅハｉを用いてｎ型電極９
を形成する。(D) removing the SiO2 film 6 by chemical etching,
Next, on the n-type Ga As layer 6 and on the n-type Ga As layer 6,
A p-type electrode 8 is formed using A u /Z n and an n-type electrode 9 is formed using A u /G e high on the back surface of the s-substrate 1.
form.
このように、Ｚｎ拡散ストライプは、ＳｉＯ２膜をマス
クとして石英封管法によシ形成されていた。In this way, the Zn diffusion stripes were formed by the quartz tube method using the SiO2 film as a mask.
またＺｎ拡散深さは、温度と時間によシ制御されていた
。Furthermore, the Zn diffusion depth was controlled by temperature and time.
またＴＪＳ型レーザの場合のＺｎ拡散も、上記したＺｎ
拡散ストライプ型レーザと同様、エピタキシャル成長後
、所望の部分に石英封管法で行われ、拡散源さは温度と
時間で制御されていた。Furthermore, the Zn diffusion in the TJS type laser is also
Similar to the diffused stripe type laser, epitaxial growth was performed on the desired area using the quartz sealed tube method, and the diffusion source was controlled by temperature and time.
発明が解決しようとする問題点
しかしながら上記の様な方法で製造したＺｎ拡散ストラ
イプ型半導体レーザは、Ｚｎをストライプ状に選択拡散
しその拡散フロントをｐ型Ａ７ＧａＡｓ層中に位置させ
る必要があるため、その製造工程が複雑となシ、また再
現性の点で問題があった。Problems to be Solved by the Invention However, in the Zn diffused stripe type semiconductor laser manufactured by the method described above, it is necessary to selectively diffuse Zn in a stripe shape and position the diffusion front in the p-type A7GaAs layer. The manufacturing process was complicated and there were problems with reproducibility.
また拡散は４００℃〜５００℃で行われるので、熱履歴
がレーザ特性の劣化をもたらす１つの原因となっていた
。Further, since diffusion is performed at 400° C. to 500° C., thermal history has been one of the causes of deterioration of laser characteristics.
また、ＴＴＳ型レーザのＺｎ拡散の場合も同様の問題点
を有していた。Further, the Zn diffusion of a TTS type laser also had similar problems.
問題点を解決するための手段
本発明は、上記した従来の問題点を解消するため、第一
の伝導型を有する半導体基板上に、前記半導体基板と同
じ伝導型の第１のクラッド層、前記第１のクラッド層上
に活性層、前記活性層上に前記第１のクラッド層と反対
の伝導型のｇ２のクラッド層を順次エピタキシャル成長
する工程と、前記第２のクラッド層上に、ｎ型およびｐ
型不純物原料を同時に供給し、かつ所望の部分に光照射
を行ないながら半導体層をエピタキシャル成長する工程
と前記半導体層上に第１の電極層、前記半導体基板の前
記第１のクラッド層、活性層、第２のクラッド層、半導
体層が形成されていない表面に第２の電極層を形成する
工程とを用いてＺｎ拡散ストライプ型半導体レーザを製
造するものである。Means for Solving the Problems In order to solve the above-mentioned conventional problems, the present invention provides, on a semiconductor substrate having a first conductivity type, a first cladding layer having the same conductivity type as the semiconductor substrate; A step of sequentially epitaxially growing an active layer on the first cladding layer, a cladding layer of G2 having the opposite conductivity type to the first cladding layer on the active layer, and growing an n-type and a G2 cladding layer on the second cladding layer; p
A step of epitaxially growing a semiconductor layer while simultaneously supplying a type impurity raw material and irradiating a desired portion with light, a first electrode layer on the semiconductor layer, the first cladding layer of the semiconductor substrate, an active layer, A Zn-diffused stripe type semiconductor laser is manufactured using a step of forming a second cladding layer and a second electrode layer on the surface where no semiconductor layer is formed.
また、本発明は半絶縁性半導体基板上に第１のクラッド
層、活性層、第２のクラッド層、キャップ層を順次、ｎ
型およびｐ型不純物原料を同時に供給し、かつ前記半導
体基板の一部分を光照射しながらエピタキシャル成長す
る工程と前記キャップ層上の光照射部と非照射部にそれ
ぞれ第１の電極層と第２の電極層とを形成する工程とを
用いて、横方向注入型半導体レーザを製造するものであ
る。Further, the present invention provides a first cladding layer, an active layer, a second cladding layer, and a cap layer on a semi-insulating semiconductor substrate in order.
A step of simultaneously supplying type and p-type impurity raw materials and performing epitaxial growth while irradiating a part of the semiconductor substrate with light, and forming a first electrode layer and a second electrode on a light irradiated part and a non-irradiated part on the cap layer, respectively. A lateral injection type semiconductor laser is manufactured using the steps of forming a layer and a layer.
作 用 この技術的手段による作用は次のようになる。For production The effect of this technical means is as follows.
エピタキシャル成長、特に有機金属熱分解法によるエピ
タキシャル成長において、熱分解効率よりも光分解効率
の方が大きいｎ型不純物原料と、光照射効果がほとんど
ないｐ型不純物原料とを同時に供給して、基板表面に光
を照射すると、光照射部でｎ型層、非照射部でｐ型層の
エピタキシャル成長が可能である。そこで、従来の半導
体レーザ構造においてｐ型不純物拡散領域がある部分の
エピタキシャル成長を行う場合、ｐ型不純物領域以外の
部分に光を照射すると、光照射部はｎ型、非照射部はｐ
型となシ、エピタキシャル成長終了時点で、所望の部分
にｐ型領域が形成されている。In epitaxial growth, especially epitaxial growth using organometallic pyrolysis, an n-type impurity raw material whose photolysis efficiency is higher than its thermal decomposition efficiency and a p-type impurity raw material which has almost no light irradiation effect are simultaneously supplied to the substrate surface. When irradiated with light, it is possible to epitaxially grow an n-type layer in the light-irradiated area and a p-type layer in the non-irradiated area. Therefore, when performing epitaxial growth on a part of a conventional semiconductor laser structure where there is a p-type impurity diffusion region, if light is irradiated to a part other than the p-type impurity region, the light-irradiated part is n-type and the non-irradiated part is p-type.
At the end of epitaxial growth, a p-type region is formed in a desired portion.
従って例えば、Ｚｎ拡散ストライプ型半導体レーザの場
合は、最後のキャップ層成長の際、上記したｎ型および
ｐ型不純物原料を同時に供給してストライブ部以外の部
分に光照射を行うことによシ、ストライプ状ｐ型領域が
形成される。また、横方向注入型半導体レーザの場合は
、最初のクラッド層の成長からキャップ層の成長まで、
上記したｎ型およびｐ型不純物原料を同時に供給して、
基板の半分を光照射することによシ、光照射部でｎ型、
非照射部でｐ型となシ横方向注入型レーザ構造となる。Therefore, for example, in the case of a Zn diffused stripe type semiconductor laser, when growing the final cap layer, the above-mentioned n-type and p-type impurity raw materials are simultaneously supplied and the parts other than the stripe part are irradiated with light. , a striped p-type region is formed. In addition, in the case of lateral injection semiconductor lasers, from the initial cladding layer growth to the cap layer growth,
By simultaneously supplying the above n-type and p-type impurity raw materials,
By irradiating half of the substrate with light, the light irradiation part becomes n-type,
The non-irradiated portion is p-type, resulting in a lateral injection type laser structure.
実施例
拡散
本発明によるＡＩＧａＡａ／ＧａＡｓ系右７ブトライプ
型半導体レーザの製造工程を第１図に示す。この場合、
光励起有機金属熱分解気相成長法によシ、レーザ構造の
エピタキシャル成長を行った。その除用いたエピタキシ
ャル成長装置の結晶成長室を第２図に示す。EXAMPLE Diffusion The manufacturing process of an AIGaAa/GaAs-based right 7-but-tripe type semiconductor laser according to the present invention is shown in FIG. in this case,
A laser structure was epitaxially grown using photo-excited metal-organic pyrolysis vapor phase epitaxy. FIG. 2 shows the crystal growth chamber of the epitaxial growth apparatus used.
Ａｌ 、Ｇａ 、Ａｓのソース材料として、それぞれＡ
ｌ（ＣＨ３）３、Ｇａ（ＣＨ３）３、Ａ ｓ Ｈ３を、
またｎ型。As source materials for Al, Ga, and As, A
l(CH3)3, Ga(CH3)3, As H3,
Also n type.
ｐ型不純物原料としてそれぞれＳ １（ＣＨ３） ４、
Ｚｎ（ＣＨ３）２を、またキャリアガスとしてＨ２を用
いた。As p-type impurity raw materials, S 1 (CH3) 4,
Zn(CH3)2 and H2 were used as carrier gas.
最初、結晶成長室内のカーボン製サセプター１６上に設
置されたｎ型層 ａ Ａ ｓ基板１の温度を高周波加熱
によシ成長温度７５０℃まで昇温する。なおこの際、Ｇ
ａ Ａ ｓ基板１表面のサーマルダメージを防ぐため
にＡ ｓ Ｈ３を２０ｃｃ／ｍｉｎ供給した。そしてそ
の後、第１図に示すように、ｎ型層 Ｉ Ｇ ａ Ａ
ｓ層２ 、ＧａＡｓ層３、ｐ型層 Ｉ Ｇ ａ Ａ ｓ
層４、ｎ型ＧａＡｓ＋層６、を順次、下表に示す成長条
件によシ成長を行ない半導体レーザ構造を作成した。First, the temperature of the n-type layer a As substrate 1 placed on the carbon susceptor 16 in the crystal growth chamber is raised to the growth temperature of 750° C. by high-frequency heating. At this time, G
In order to prevent thermal damage to the surface of the a As substrate 1, As H3 was supplied at 20 cc/min. After that, as shown in FIG. 1, the n-type layer I Ga A
s layer 2, GaAs layer 3, p-type layer I Ga As
Layer 4 and n-type GaAs+ layer 6 were sequentially grown under the growth conditions shown in the table below to create a semiconductor laser structure.
なおこの場合全流量としては５１／ｍｉｎ、成長時の結
晶成長室内圧としては１００Ｔｏｒｒである。In this case, the total flow rate is 51/min, and the internal pressure of the crystal growth chamber during growth is 100 Torr.
また前述したようにｎ型層 ａ Ａ ｓ層５成長の場合
、ｎ型不純物原料５ｔ（ＣＨ３）４とｐ型不純物原料Ｚ
ｎ（ＣＨ３）２とを同時に供給し第１図Ｂに示すように
、それらの供給開始と同時に、ヌトライプ状パターン（
この場合、ストライプ部が非照射部で、パターン幅１０
μｍである）のＡｒＦエキシマレーザ光１光合１．ｅｓ
Ｗ／ｃｒＡのパワーで、基板表面に対して垂直方向から
照射した。Moreover, as mentioned above, in the case of growing the n-type layer aAs layer 5, the n-type impurity raw material 5t(CH3)4 and the p-type impurity raw material Z
As shown in FIG. 1B, a nutripe-like pattern (
In this case, the stripe part is a non-irradiated part and the pattern width is 10
μm) ArF excimer laser beam 1 beam combination 1. es
Irradiation was performed from a direction perpendicular to the substrate surface with a power of W/crA.
この結果、ＧａＡｓキャンプ層６の非照射部にはキャリ
ア濃度６ Ｘ １０１７ｃｍ−’のｐ型層１０照射部に
はキャリア濃度５Ｘ１０ｆｆｌ のｎ型層が形成でき
、ストライプ状Ｚｎ拡散と同じ構造となった。As a result, a p-type layer 10 with a carrier concentration of 6 x 1017 cm-' was formed in the non-irradiated part of the GaAs camp layer 6, and an n-type layer with a carrier concentration of 5 x 10ffl was formed in the irradiated part, resulting in the same structure as striped Zn diffusion. .
そして最後に、ｎ型層 ａ Ａ ｓキャラプ層６上にＡ
ｕ／Ｚｎを用いてｐ型電極８を、またｎ型ＧａＡｓ基板
１の裏面にＡ ｕ ／Ｇ ｅ ／Ｎ ｉを用いてｎ型電
極９を形成した。Finally, on the n-type layer a A s character layer 6,
A p-type electrode 8 was formed using u/Zn, and an n-type electrode 9 was formed on the back surface of the n-type GaAs substrate 1 using A u /G e /N i.
以上のような本実施例によれば、−回のエピタキシャル
成長で、Ｚｎ拡散ストライプ型半導体レーザ構造が形成
でき、Ｚｎ拡散の工程が省略でき製造プロセスの簡略化
が大いにはかれた。またレーザ特性の劣化を誘起するＧ
ａ Ａ ｓ活性層３中へのＺｎが拡散が生じなかった
。According to this embodiment as described above, a Zn-diffused stripe type semiconductor laser structure can be formed by - times of epitaxial growth, and the Zn-diffusion step can be omitted, greatly simplifying the manufacturing process. In addition, G induces deterioration of laser characteristics.
Zn did not diffuse into the aAs active layer 3.
次に本発明による第２の実施例、すなわちＡ Ｉ Ｇ
ａ Ａ ｓ ／Ｇ ａ Ａ ｓ系横方向注入型半導体レ
ーザの場合について説明する。その製造工程を第３図に
示す。なお第３図において、第１図と同一部分には同一
番号を付す。Next, a second embodiment according to the present invention, namely A I G
The case of an aAs/GaAs-based lateral injection type semiconductor laser will be described. The manufacturing process is shown in FIG. In FIG. 3, the same parts as in FIG. 1 are given the same numbers.
この場合、レーザ構造のエピタキシャル成長に用いた成
長方法、ソース材料、不純物原料、キャリアガス、およ
び、成長直前までの基板処理方法。In this case, the growth method used for epitaxial growth of the laser structure, source material, impurity raw material, carrier gas, and substrate processing method immediately before growth.
全流量、結晶成長室内圧は第１の実施例の場合と全く同
じである。最初、半絶縁性Ｇ ａ Ａ ｓ基板１９上に
Ａｌ３ Ｇ ａ Ａ ｓ層２、Ｇ ａ Ａ ｓ層３、Ａ
ｌ１ＧａＡｓ層２０、ＧａＡ＋１層６を順次、下表に示
す成長条件によシ成長を行った。The total flow rate and the internal pressure of the crystal growth chamber are exactly the same as in the first embodiment. First, on a semi-insulating Ga As substrate 19, Al3 Ga As layer 2, Ga As layer 3, and A
The 11GaAs layer 20 and the GaA+1 layer 6 were sequentially grown under the growth conditions shown in the table below.
この場合も前述したように、エピタキシャル成長中は基
板の半分を基板表面に対して垂直方向から１．ｔｓ’Ｗ
／ａｄのパワーでＡｒＦエキシマレーザ照射した。In this case as well, as mentioned above, during epitaxial growth, half of the substrate is moved 1. ts'W
ArF excimer laser irradiation was performed with a power of /ad.
この結果、全てのエピタキシャル層の非照射部は、キャ
リアｍ度５×１０ 口 のｐ型層となシ、また照射部は
キャリア濃度６×１０ ｃｒｎ Ｑｎ型層が形成できた
。（＾
次にレーザ照射部と非照射部との界面をフォトレジスト
をマスクにして、選択エツチングし、Ｇ ａ Ａ ａキ
ャップ層６のレーザ照射部と非照射部とを電気的に絶縁
した。（Ｅｌ
最後に、ＧａＡｓキャップ層のレーザ照射部上と非照射
部上にそれぞれＡ ｕ／Ｇ ｅ ／Ｎ ｉおよびＡ ｕ
／ Ｚ ｎを用いて、ｎ型電極とｐ型電極を形成した
。（ｑ
以上のような本実施例においても、−回のエピタキシャ
ル成長で、横方向注入型半導体レーザ構造が形成でき製
造プロセスの簡略化がはかれた。As a result, the non-irradiated portions of all the epitaxial layers were formed as p-type layers with a carrier concentration of 5×10 5 m, and the irradiated portions were formed as Qn-type layers with a carrier concentration of 6×10 crn. (^ Next, the interface between the laser irradiated part and the non-irradiated part was selectively etched using a photoresist as a mask, and the laser irradiated part and the non-irradiated part of the Ga A a cap layer 6 were electrically insulated. ( El Finally, A u/G e /N i and A u on the laser irradiated part and non-irradiated part of the GaAs cap layer, respectively.
/ Z n was used to form an n-type electrode and a p-type electrode. (q) Also in this embodiment as described above, a lateral injection type semiconductor laser structure can be formed by - times of epitaxial growth, and the manufacturing process is simplified.
以−上述べた実施例においては、レーザ構造のエピタキ
シャル成長に光励起有機金属熱分解気相成長法を用いた
場合について述べたが、本発明は光励起Ｍ Ｂ Ｅ （
Ｍｏｌｅｃｕｌａｒ Ｂｅａｍ Ｅｐｆ ｔａｘｙ）法
、光励起ＭＯＭＢＥ （Ｍｅｔａｌ Ｏｒｇａｎｉｃ
ＭｏｌｅｃｕｌａｒＢｅａｍ Ｅｐｉｔａｘｙ）法、光
励起Ｖ Ｐ Ｅ （ＶａｐｏｒＰｈａｓｅ Ｅｐｉｔａ
ｘｙ）法を用いた場合でも実現可能である。また基板照
射用光源としてＡｒＦエキシマレーザ光を用いた場合に
ついて述べたが、本発明は、Ａｒ レーザ、 ＣＯ２Ｌ
／−ザ、Ｈｅ−Ｃｄレーザ、ＫｒＦやＸｅＦ等のＫｒＦ
以外のエキシマレーザを用いた場合でも実現可能である
。また以上述べた実施例はＡｌ１ＧａＡｓ／ＧａＡｓ系
半導体レーザの場合について説明したが、本発明はＩ
ｎ Ｇ ａ Ａ ｓ Ｐ ／ Ｉ ｎ Ｐ系。In the embodiments described above, a case was described in which a photoexcited metal-organic pyrolysis vapor phase epitaxy method was used for epitaxial growth of a laser structure.
Molecular Beam Epf taxy) method, optical excitation MOMBE (Metal Organic
Molecular Beam Epitaxy) method, photoexcitation VPE (VaporPhase Epitaxy) method,
This can also be achieved using the xy) method. In addition, although the case has been described in which ArF excimer laser light is used as the light source for irradiating the substrate, the present invention also uses ArF excimer laser light, CO2L
/-The, He-Cd laser, KrF such as KrF and XeF
It is also possible to use other excimer lasers. Further, although the embodiments described above have been explained in the case of an Al1GaAs/GaAs semiconductor laser, the present invention
nGaAsP/InP system.
ＡｌＧａＩｎＰ／ＧａＡｓ系等の他のｒｖ−ｖ族化合物
半導体を用いた場合に用いることができるばかりですく
、更にＺｎ５ｅ＋Ｚｎ５ｓｅ等のＵ−Ｍ族化合物半導体
を用いた場合や、ＣｕＧａＳｅ２．ＣｕＡｌＦ３２等の
カルコパイライト型化合物半導体を用いた場合にも適用
可能である。またｎ型およびｐ型不純物の組合せとして
、本実施例では、Ｓｉ（ＣＨ３）４とｚ ｎ （ＣＨ３
） ２、を用いたが本発明は他の熱分解効率よりも光分
解効率の方が大さいｎ型不純物原料と光照射効果のほと
んどないｐ型不純物原料の組合わせの場合に用いること
ができるばかりでなく、光照射効果のほとんどないｎ型
不純物原料と熱分解効率よりも光分解効率の方が大きい
ｐ型不純物原料の組合わせを用いた場合にも適用可能で
ある。It can be used not only when other rv-v group compound semiconductors such as AlGaInP/GaAs are used, but also when using U-M group compound semiconductors such as Zn5e+Zn5se, CuGaSe2. It is also applicable when using a chalcopyrite type compound semiconductor such as CuAlF32. Furthermore, in this example, as a combination of n-type and p-type impurities, Si(CH3)4 and z n (CH3
) 2, but the present invention can be used in the case of a combination of an n-type impurity raw material whose photolysis efficiency is higher than other thermal decomposition efficiencies and a p-type impurity raw material which has almost no light irradiation effect. It is also applicable to the case where a combination of an n-type impurity raw material, which has almost no light irradiation effect, and a p-type impurity raw material, whose photolysis efficiency is higher than its thermal decomposition efficiency, is used.
また本実施例は、ストライプ拡散型および横方向注入型
半導体レーザの場合であるが、埋め込み構造や他の種々
のレーザ構造に適用できることは言うまでもない。Further, although this embodiment deals with a stripe diffusion type semiconductor laser and a lateral injection type semiconductor laser, it goes without saying that the present invention can be applied to a buried structure and various other laser structures.
発明の効果
本発明にかかる半導体レーザは、そのレーザ構造のエピ
タキシャル成長の際、熱分解効率よりも光分解効率の方
が大きいｎ（１＝）型不純物原料と光照射効果のほとん
どないｐ（→型不純物原料とを同時に供給して、所望の
エピタキシャル層の所望の部分に光照射することによシ
同一のエピタキシャル層中に形成したものである。従っ
て一回のエピタキシャル成長で、従来のＺｎ拡散領域形
成後の構造と同一の構造が形成でき、プロセスの簡略化
が大いにはかれる。また、従来の拡散領域の位置が、光
照射の位置および時間で制御可能なので、その位置精度
特に従来の拡散フロント位置の向上がはかれる。Effects of the Invention During the epitaxial growth of the laser structure of the semiconductor laser of the present invention, the n(1=) type impurity raw material, which has a higher photodecomposition efficiency than the thermal decomposition efficiency, and the p(→ type) material, which has almost no light irradiation effect, are used. It is formed in the same epitaxial layer by supplying the impurity raw material at the same time and irradiating the desired portion of the desired epitaxial layer with light.Therefore, a single epitaxial growth is required to form a Zn diffusion region in the conventional method. The same structure as the subsequent structure can be formed, greatly simplifying the process.Also, since the position of the conventional diffusion region can be controlled by the position and time of light irradiation, its positional accuracy, especially the position of the conventional diffusion front, can be improved. Improvements can be made.
第１図は本発明の第１の実施例におけるＺｎ拡散ストラ
イプ型半導体レニザの製造方法を示す工程断面図、第２
図は本発明の実施例においてエピタキシャル成長工程に
用いた光励起有機金属熱分解気相成長装置の結晶成長室
の模式断面図、第３図は本発明の第２の実施例における
横方向注入型半導体レーザの製造方法を示す工程断面図
、第４図は従来のＺｎ拡散ストライプ型半導体レーザの
製造方法を示す工程断面図である。
１・・・・・・ｎ型ＧａＡｓ基板、２・・・・・・ｎ型
ＡＩ Ｇ ａ Ａ ｓ層、３・・・・・・Ｇ ａ Ａ
ｓ活性層、４・・・・・・ｐ型ＡｌＧａＡｓ層、６・・
・・・・ｎ型Ｇ ａ Ａ ｓ層、６・・・・・・Ｓ ｉ
Ｏ２膜、７・・・・・・Ｚｎ拡散ストライプ、１ｏ・
・・・・・ｐ型Ｇ ａ Ａ ｓ領域、１１・・・・・・
ＡｒＦエキシマレーザ光、１９・・・・・・半絶縁性Ｇ
ａ Ａ ［１基板、２０−＝−・・ｎ ｍＡＩ Ｇ
ａ Ａ ｓ層、２１＝・・・ｐ型領域。FIG. 1 is a process cross-sectional view showing a method for manufacturing a Zn-diffused stripe type semiconductor laser according to the first embodiment of the present invention, and FIG.
The figure is a schematic sectional view of the crystal growth chamber of the photoexcited metal organic pyrolysis vapor phase growth apparatus used in the epitaxial growth process in the embodiment of the present invention, and FIG. 3 is the lateral injection type semiconductor laser in the second embodiment of the present invention. FIG. 4 is a cross-sectional view showing a process for manufacturing a conventional Zn-diffused stripe type semiconductor laser. 1...N-type GaAs substrate, 2...N-type AI GaAs layer, 3...GaA
s active layer, 4...p-type AlGaAs layer, 6...
...N-type GaAs layer, 6...S i
O2 film, 7... Zn diffusion stripe, 1o.
...p-type GaAs region, 11...
ArF excimer laser light, 19...semi-insulating G
a A [1 board, 20-=-...n mAI G
aAs layer, 21=...p-type region.
Claims (10)
体基板と同伝導型の第１のクラッド層、前記第１のクラ
ッド層上に活性層、前記活性層上に前記第１のクラッド
層と反対の伝導型の第２のクラッド層を順次エピタキシ
ャル成長する工程と、前記第２のクラッド層上に、ｎ型
およびｐ型不純物原料を同時に供給し、かつ所望の部分
に光照射を行いながら半導体層をエピタキシャル成長す
る工程と、前記半導体層上に第１の電極層、前記半導体
基板の前記第１のクラッド層、活性層、第２のクラッド
層、半導体層が形成されていない表面に第２の電極層を
形成する工程とを備えてなる半導体レーザの製造方法。(1) A first cladding layer having the same conductivity type as the semiconductor substrate on a semiconductor substrate having a first conductivity type, an active layer on the first cladding layer, and a first cladding layer on the active layer. A step of sequentially epitaxially growing a second cladding layer of a conductivity type opposite to that of the second cladding layer, simultaneously supplying n-type and p-type impurity raw materials onto the second cladding layer, and irradiating a desired portion with light. a step of epitaxially growing a semiconductor layer, a first electrode layer on the semiconductor layer, the first cladding layer, an active layer, a second cladding layer of the semiconductor substrate, and a second 1. A method of manufacturing a semiconductor laser, comprising: forming an electrode layer.
成長法、あるいはハライド気相成長法、あるいはハイド
ライド気相成長法、あるいはガスソース分子線エピタキ
シー法、あるいは分子線エピタキシー法である特許請求
の範囲第１項に記載の半導体レーザの製造方法。(2) The epitaxial growth method is metal-organic pyrolysis vapor phase epitaxy, halide vapor phase epitaxy, hydride vapor phase epitaxy, gas source molecular beam epitaxy, or molecular beam epitaxy. A method for manufacturing a semiconductor laser according to item 1.
ザ、ＣＯ＿２レーザ、紫外線ランプである特許請求の範
囲第１項に記載の半導体レーザの製造方法。(3) The method for manufacturing a semiconductor laser according to claim 1, wherein the light source used for light irradiation is an excimer laser, an Ar laser, a CO_2 laser, or an ultraviolet lamp.
少なく一方が、エピタキシャル成長温度で熱分解効率よ
りも光分解効率の方が大きいものである特許請求の範囲
第１項に記載の半導体レーザの製造方法。(4) The semiconductor laser according to claim 1, wherein at least one of the n-type and p-type impurity raw materials supplied at the same time has a photodecomposition efficiency higher than a thermal decomposition efficiency at the epitaxial growth temperature. Production method.
Ｈ＿３）＿４、Ｚｎ（ＣＨ＿３）＿２である特許請求の
範囲第４項に記載の半導体レーザの製造方法。(5) The n-type and p-type impurity raw materials are Si(C
The method for manufacturing a semiconductor laser according to claim 4, wherein the semiconductor laser is H_3)_4 and Zn(CH_3)_2.
性層、第２のクラッド層、キャップ層を順次ｎ型および
ｐ型不純物原料を同時に供給し、かつ前記半導体基板の
一部分を光照射しながらエピタキシャル成長する工程と
前記キャップ層上の光照射部と非照射部にそれぞれ第１
の電極層と第２の電極層とを形成する工程とを備えてな
る半導体レーザの製造方法。(6) Simultaneously supplying n-type and p-type impurity raw materials to the first cladding layer, active layer, second cladding layer, and cap layer on a semi-insulating semiconductor substrate, and exposing a portion of the semiconductor substrate to light. A step of epitaxial growth while irradiating, and a step of epitaxial growth while irradiating, and a step of epitaxially growing a first layer on the irradiated area and the non-irradiated area on the cap layer, respectively.
1. A method for manufacturing a semiconductor laser, comprising the steps of forming an electrode layer and a second electrode layer.
成長法、あるいはハライド気相成長法、あるいはハイド
ライド気相成長法、あるいはガスソース分子線エピタキ
シー法、あるいは分子線エピタキシー法である特許請求
の範囲第６項に記載の半導体レーザの製造方法。(7) The epitaxial growth method is a metal organic pyrolysis vapor phase epitaxy method, a halide vapor phase epitaxy method, a hydride vapor phase epitaxy method, a gas source molecular beam epitaxy method, or a molecular beam epitaxy method. A method for manufacturing a semiconductor laser according to item 6.
ザ、ＣＯ＿２レーザ、紫外線ランプである特許請求の範
囲第６項に記載の半導体レーザの製造方法。(8) The method for manufacturing a semiconductor laser according to claim 6, wherein the light source used for light irradiation is an excimer laser, an Ar laser, a CO_2 laser, or an ultraviolet lamp.
少なく一方が、エピタキシャル成長温度で熱分解効率よ
りも光分解効率の方が大きいものである特許請求の範囲
第６項に記載の半導体レーザの製造方法。(9) The semiconductor laser according to claim 6, wherein at least one of the n-type and p-type impurity raw materials supplied at the same time has a photodecomposition efficiency higher than a thermal decomposition efficiency at the epitaxial growth temperature. Production method.
ＣＨ＿３）＿４、Ｚｎ（ＣＨ＿３）＿２である特許請求
の範囲第９項に記載の半導体レーザの製造方法。(10) The n-type and p-type impurity raw materials are Si(
The method for manufacturing a semiconductor laser according to claim 9, wherein the semiconductor laser is CH_3)_4 and Zn(CH_3)_2.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27760487A JPH01120085A (en) | 1987-11-02 | 1987-11-02 | Manufacture of semiconductor laser |
| US07/168,256 US4843031A (en) | 1987-03-17 | 1988-03-15 | Method of fabricating compound semiconductor laser using selective irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27760487A JPH01120085A (en) | 1987-11-02 | 1987-11-02 | Manufacture of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01120085A true JPH01120085A (en) | 1989-05-12 |
Family
ID=17585743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27760487A Pending JPH01120085A (en) | 1987-03-17 | 1987-11-02 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01120085A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01214083A (en) * | 1988-02-22 | 1989-08-28 | Toshiba Corp | Semiconductor laser device and its manufacture |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115892A (en) * | 1981-01-12 | 1982-07-19 | Agency Of Ind Science & Technol | Semiconductor laser element |
| JPS60249380A (en) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | Semiconductor laser device |
-
1987
- 1987-11-02 JP JP27760487A patent/JPH01120085A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115892A (en) * | 1981-01-12 | 1982-07-19 | Agency Of Ind Science & Technol | Semiconductor laser element |
| JPS60249380A (en) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01214083A (en) * | 1988-02-22 | 1989-08-28 | Toshiba Corp | Semiconductor laser device and its manufacture |
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