JPS63221528A - Electron emitting element - Google Patents
Electron emitting elementInfo
- Publication number
- JPS63221528A JPS63221528A JP62052113A JP5211387A JPS63221528A JP S63221528 A JPS63221528 A JP S63221528A JP 62052113 A JP62052113 A JP 62052113A JP 5211387 A JP5211387 A JP 5211387A JP S63221528 A JPS63221528 A JP S63221528A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electron
- deposition surface
- conductive member
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 74
- 230000008021 deposition Effects 0.000 claims description 52
- 238000010899 nucleation Methods 0.000 claims description 40
- 230000006911 nucleation Effects 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 36
- 238000000605 extraction Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 34
- 239000000758 substrate Substances 0.000 abstract description 29
- 239000004020 conductor Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 229910017872 a-SiO2 Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 54
- 238000000034 method Methods 0.000 description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 239000010408 film Substances 0.000 description 23
- 229910052681 coesite Inorganic materials 0.000 description 17
- 229910052906 cristobalite Inorganic materials 0.000 description 17
- 210000003128 head Anatomy 0.000 description 17
- 229910052682 stishovite Inorganic materials 0.000 description 17
- 229910052905 tridymite Inorganic materials 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 6
- 238000002109 crystal growth method Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910004014 SiF4 Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は電子放出素子に係り、特に堆積面上に設けられ
た尖頭部を有する電極と、
前記堆積面上に設けられた絶縁部材を介して、前記尖頭
部の近傍に設けられた引き出し電極とを有する電子放出
素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electron-emitting device, and particularly relates to an electron-emitting device that includes an electrode having a pointed head provided on a deposition surface, and an insulating member provided on the deposition surface. The present invention relates to an electron-emitting device having an extraction electrode provided in the vicinity of the point through the tip.
［従来技術］
従来、電子放出源としては熱陰極型電子放出素子が多く
用いられていたが、熱陰極を利用した電子放出は加熱に
よるエネルギーロスが大きく、予備加熱が必要等の問題
点を有していた。[Prior Art] Conventionally, hot cathode type electron emitting devices have often been used as electron emission sources, but electron emission using hot cathodes has problems such as large energy loss due to heating and the need for preheating. Was.
これらの問題点を解決すべく、冷瞼極型の電子放出素子
がいくつか提案されており、その中に局部的に高電界を
発生させ、電界放出により電子放出を行わせる電界効果
型の電子放出素子がある。In order to solve these problems, several cold eyelid electrode type electron-emitting devices have been proposed. There is an emitting element.
第１１図は電界効果型の電子放出素子の一例を示す概略
的部分断面図である。FIG. 11 is a schematic partial cross-sectional view showing an example of a field effect type electron-emitting device.
第１１図に示すように、Ｓｉ等の基体２０−１−にＭｏ
（モリブデン）等の円錐形状の電極１８を設け、この電
極１８を中心として開「１部が設けられた５ｉ０２等の
絶縁層１９が形成され、この−１−に、前記円錐形状の
尖頭部の近傍にその端部が形成された引き出し電極１７
を設ける。As shown in FIG. 11, Mo is applied to a substrate 20-1- such as Si.
A conical electrode 18 made of (molybdenum) or the like is provided, and an insulating layer 19 such as 5i02 having an open section is formed around this electrode 18. An extraction electrode 17 whose end is formed near the
will be established.
このような構造の電子放出効率において、基体２０と引
き出し電極１７との間に電圧を印加すると、電界強度の
強い尖頭部から電子が放出される。With the electron emission efficiency of such a structure, when a voltage is applied between the base body 20 and the extraction electrode 17, electrons are emitted from the tip where the electric field strength is strong.
［発明が解決しようとする問題点］
しかしながら、上記従来の電子放出素子は、円錐形状の
尖頭部に強電界がかかり、電流密度が高くなるために、
発熱が大きくなって尖頭部が溶融することから、特性変
化を起し、動作電圧や電子放出効率が変動してしまう問
題点を有していた。[Problems to be Solved by the Invention] However, in the conventional electron-emitting device described above, a strong electric field is applied to the conical tip, resulting in a high current density.
The heat generated increases and the tip melts, causing changes in characteristics and causing fluctuations in operating voltage and electron emission efficiency.
本発明の目的は電子放出部となる尖頭部を有する電極の
耐熱性の優れた電子放出素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an electron-emitting device in which an electrode having a pointed portion serving as an electron-emitting portion has excellent heat resistance.
［問題点を解決するためのｆ・段］
本発明の電子放出素子は、堆積面一１−に設けられた尖
頭部を有する電極と。[Step F for Solving Problems] The electron-emitting device of the present invention includes an electrode having a pointed head provided on the deposition surface 1-.
前記堆植面上に設けられた絶縁部材を介して、前記尖頭
部の近傍に設けられた引き出し電極とを有する゛電子放
出素子において、
前記尖頭部を有する電極を、尖ｙＡ部を有する導電部材
と、この導電部材上に形成された耐熱性導電膜とから構
成したことを特徴とする。In the electron-emitting device, the electrode having the pointed end has an extraction electrode provided near the pointed end through an insulating member provided on the planting surface, and the electrode having the pointed end has a pointed end yA. It is characterized by comprising a conductive member and a heat-resistant conductive film formed on the conductive member.
［作用］
本発明の電子放出素子は、尖頭部を有する電極を、尖頭
部を有する導電部材と、この導電部材上に形成された耐
熱性導電膜とから構成したことにより、電子放出部を耐
熱性の高い導電膜とし、発熱による溶融等による尖頭部
の形状変化を防ぐものであり、また、尖頭部を有する電
極の大部分を導電率の高い導電部材で構成することによ
り、不要な発熱を抑えるものである。[Function] In the electron-emitting device of the present invention, the electrode having a pointed portion is composed of a conductive member having a pointed portion and a heat-resistant conductive film formed on the conductive member, so that the electron-emitting portion is a conductive film with high heat resistance, which prevents the tip from changing its shape due to melting due to heat generation, and by constructing most of the electrode with the tip from a conductive material with high conductivity, This suppresses unnecessary heat generation.
［実施例］
以下、未発１町の実施例を図面を用いて詳細に説明する
。[Example] Hereinafter, an example of one undeveloped town will be described in detail using drawings.
第１図は本発明の電子放出素子の一実施例を示す概略的
部分断面図である。FIG. 1 is a schematic partial sectional view showing an embodiment of the electron-emitting device of the present invention.
同図に示すように、Ｓｉ等の基体１」−に非晶質の絶縁
部材である５ｉ０２等の絶縁層２を形成し、この絶縁層
をホトエツチング等によって加工し、四部７を形成する
。なお、本実施例では、四部７の底面７ａが堆積面上な
り、且つ四部７の側壁部が絶縁部材となっており、同一
工程で形成されるが、絶縁部材を、別工程で堆植面上に
設けてもよい、また絶縁部材の材料は堆積面材料と別な
材料で４１ｊ成してもよい。As shown in the figure, an insulating layer 2 made of an amorphous insulating material such as 5i02 is formed on a substrate 1 made of Si or the like, and this insulating layer is processed by photo-etching or the like to form four parts 7. In this example, the bottom surface 7a of the four parts 7 is on the deposition surface, and the side wall part of the four parts 7 is an insulating member, which is formed in the same process, but the insulating member is placed on the deposition surface in a separate process. The material of the insulating member may be a material different from the material of the deposition surface.
堆積面上なる凹部７の底面７ａにＳｉ、Ｓｉ３Ｎ４等の
異種材料たる核形成ベース３を形成し、この上に形成さ
れた単一の核を中心としてＳｉ′＄の単結晶を成長させ
て、尖頭部を有する導電部材４を形成し、さらにこの上
に耐熱性導電膜５を形成して、尖頭部を有する電極８を
設ける。この導電部材４の材料は、一定の電流を供給で
きるものであればよく、半導体、導体を問わず用いるこ
とができる。なお、前記導電部材の単結晶の成長方法の
詳細については、後述する。A nucleation base 3 made of a different material such as Si or Si3N4 is formed on the bottom surface 7a of the recess 7 on the deposition surface, and a single crystal of Si'$ is grown around the single nucleus formed on this base 3. A conductive member 4 having a pointed head is formed, a heat-resistant conductive film 5 is further formed thereon, and an electrode 8 having a pointed head is provided. The conductive member 4 may be made of any material as long as it can supply a constant current, and may be a semiconductor or a conductor. Note that details of the method for growing the single crystal of the conductive member will be described later.
耐熱性導電膜５としては、Ｗ、Ｌａ８６等が用いられ、
所望の製造方法で導電部材４」二に形成される０例えば
、Ｓｉ単結晶の導電部材りに膜を形成する場合は、ＣＶ
Ｄ法を用いて、Ｓｉ単結晶上で、
ＳＮ＋ＷＦ６ →Ｗ＋ＳｉＦ４
なる化学反応を起こさせ、Ｓｉ単結晶にＳｉ単結晶にｗ
Ｈを形成する。As the heat-resistant conductive film 5, W, La86, etc. are used.
For example, when forming a film on a conductive member made of Si single crystal, CV
Using the D method, a chemical reaction of SN+WF6 →W+SiF4 is caused on the Si single crystal, and the Si single crystal becomes W.
Form H.
絶縁層２の上の、前記電極８の尖頭部の近傍にには、引
き出し電極６が形成される。この引き出し電極６は、レ
ジストで凹部７を埋めて、このレジスト及び絶縁層ｚ上
にＭｏ等の金属層を形成し、さらに、この金属層をホト
エツチングを用いて電極８の尖頭部の近傍に開口部を形
成し、レジストを除去することによって形成される。An extraction electrode 6 is formed on the insulating layer 2 near the tip of the electrode 8 . The extraction electrode 6 is made by filling the recess 7 with a resist, forming a metal layer such as Mo on the resist and the insulating layer z, and then applying this metal layer to the vicinity of the tip of the electrode 8 by photoetching. It is formed by forming an opening and removing the resist.
なお、上記実施例においては、堆積面材料は絶縁材料に
限定されず、寥導体材料、導体材料を用いてもよいが、
絶縁材料を用いれば、耐電圧を向上させることができる
。又上記実施例においては、基体ｌ上に絶縁層２を設け
て堆積面を構成したが、絶縁基体を堆積面上して用いる
こともできる。In the above embodiments, the material of the deposited surface is not limited to an insulating material, and a conductive material or a conductive material may be used.
By using an insulating material, withstand voltage can be improved. Further, in the above embodiments, the insulating layer 2 was provided on the base 1 to constitute the deposition surface, but it is also possible to use an insulating base on the deposition surface.
第２図は上記実施例の電子放出素子の配線を説明するた
めの概略的斜視図である。FIG. 2 is a schematic perspective view for explaining the wiring of the electron-emitting device of the above embodiment.
同図に示すように、上記実施例の電子放出素子の配線は
、凹部７の底面７ａに尖頭部を有する電極８を形成した
後、絶縁層２に溝を設け、この溝に配線９を設けること
によって形成することができ、尖頭部を有する電極８と
接続させ、配線９と前記引き出し電極６との間に引き出
し電極６側を高電位とする電圧を印加し、電子放出を行
わせることができる。なお、上記実施例においては、引
き出し電極６は、Ｍｏ等の金属層をプロセス中でエツチ
ングすることによって作製したが、前記溝の形成後に開
口部を有する金属板を絶縁層２に接着することによって
作製してもよい。As shown in the figure, in the wiring of the electron-emitting device of the above embodiment, after an electrode 8 having a pointed head is formed on the bottom surface 7a of the recess 7, a groove is provided in the insulating layer 2, and a wiring 9 is inserted into the groove. It can be formed by providing an electrode 8 having a pointed head, and applying a voltage between the wiring 9 and the extraction electrode 6 to make the extraction electrode 6 side a high potential, causing electron emission to occur. be able to. In the above example, the extraction electrode 6 was produced by etching a metal layer such as Mo during the process, but it was made by bonding a metal plate having an opening to the insulating layer 2 after forming the groove. You may also create one.
上記実施例に示したように、本発明の電子放出素子は、
尖頭部を有する電極を、尖頭部を有する導電部材と、こ
の導電部材上に形成された耐熱性導電膜とから構成した
ことを特徴とするものであり、電子放出部を耐熱性の高
い導電膜とし１発熱による溶融等による尖頭部の形状変
化を防ぐことができ、また、尖頭部を有する′ｉミニの
大部分を導電率の高い導電部材で構成することにより、
不要な発熱を抑えることができる。As shown in the above examples, the electron-emitting device of the present invention is
The electrode having a pointed head is composed of a conductive member having a pointed head and a heat-resistant conductive film formed on the conductive member, and the electron emitting part is formed of a highly heat-resistant conductive film. As a conductive film, it is possible to prevent the shape of the tip from changing due to melting due to heat generation, and by constructing most of the tip with a conductive member with high conductivity,
Unnecessary heat generation can be suppressed.
なお、導電部材は導電性等から単結晶であることが望ま
しいが、これに限定されず多結晶等であってもよく、ま
た導電部材の製造方法においても、上記実施例の単結晶
成長方法に限定されず、第１１図に示した従来の製造方
法等を用いてもよいが、上記実施例に示した単結晶成長
方法すなわち、堆積面に、この堆積面の材料より核形成
密度が十分大きく、且つ単一の核だけが成長する程度に
十分微細な異種材料を形成し、この異種材料に成長した
単一の核を中心として結晶をＴ＆長させる結晶成長方法
は１次のような利点を有する。Note that the conductive member is preferably single crystal in view of conductivity, but is not limited to this and may be polycrystalline or the like, and the method for manufacturing the conductive member may be the same as the single crystal growth method in the above embodiment. Although the conventional manufacturing method shown in FIG. 11 may be used without limitation, the single crystal growth method shown in the above example is used, in which the nucleation density on the deposition surface is sufficiently higher than that of the material on the deposition surface. , and a crystal growth method in which a heterogeneous material is formed sufficiently fine that only a single nucleus grows, and the crystal is T&longed around the single nucleus grown in this heterogeneous material, has the following advantages: have
（１）尖頭部を有する電極の形状が、堆積面、異種材料
、導電部材の材質、堆積条件等の製造条件で決定され、
絶縁部材、引き出し電極の開口部の寸法精度と独立して
形成されるので、所望の大きさの電極を形成することが
でき、またその大きさのバラツキを抑えることができる
。(1) The shape of the electrode having a pointed head is determined by manufacturing conditions such as the deposition surface, different materials, the material of the conductive member, and deposition conditions;
Since the electrodes are formed independently of the dimensional accuracy of the insulating member and the opening of the lead-out electrode, it is possible to form an electrode of a desired size and to suppress variations in the size.
（２）尖頭部を有する電極の位置が異種材料の位置精度
で決められるので、所望の位置に高精度に作製すること
ができ、複数の電子放出口を有するマルチ型電子放出素
子をファインピッチで作製することができる。(2) Since the position of the electrode with the pointed head is determined by the positional accuracy of different materials, it can be manufactured at the desired position with high precision, and multi-type electron-emitting devices with multiple electron-emitting ports can be fabricated with fine pitch. It can be made with
（３）単結晶特有の尖頭部が形成され、電子放出部の形
状が均−且つシャープに形成されるので、特別な針状加
工が不要であり、電界強度を均−且つ強いものとし、動
作開始電圧の範囲のバラツキを抑え、電子放出効率を向
上させることができる。(3) Since a pointed head peculiar to a single crystal is formed, and the shape of the electron emitting part is formed evenly and sharply, no special needle-like processing is required, and the electric field strength is uniform and strong; It is possible to suppress variations in the range of operation start voltage and improve electron emission efficiency.
（４）従来、単結晶の成長が困難であった非晶質の絶縁
基板にも単結晶を成長させることが容易となり、高耐圧
な電子放出素子を提供することあができる。(4) It becomes easy to grow a single crystal even on an amorphous insulating substrate, on which it has been difficult to grow a single crystal in the past, and it is possible to provide an electron-emitting device with high breakdown voltage.
（５）通常の半導体製造プロセスで製造することができ
るので、簡易な工程で高集積化を行なうことができる。(5) Since it can be manufactured using a normal semiconductor manufacturing process, high integration can be achieved with a simple process.
以下、堆積面に単結晶を成長させる単結晶成長法につい
て詳述する。A single crystal growth method for growing a single crystal on a deposition surface will be described in detail below.
まず、堆積面上に選択的に堆積膜を形成する選択堆積法
について述べる０選択堆積法とは、表面エネルギー、付
着係数、脱離係数１表面拡散速度等という薄膜形成過程
での核形成を左右する因子の材料間での差を利用して、
基板上に選択的に薄膜を形成する方法である。First, we will discuss the selective deposition method that selectively forms a deposited film on the deposition surface. The zero-selective deposition method is based on factors such as surface energy, adhesion coefficient, desorption coefficient, and surface diffusion rate that affect nucleation during the thin film formation process. Utilizing the differences in factors between materials,
This is a method of selectively forming a thin film on a substrate.
第３図（Ａ）および（Ｂ）は選択堆積法の説明図である
。FIGS. 3(A) and 3(B) are illustrations of the selective deposition method.
まず、同図（Ａ）に示すように、基板１０上に、基板ｌ
Ｏと上記因子の異なる材料から成る薄膜１１を所望部分
に形成する。そして、適当な堆積条件によって適当な材
料から成る薄膜の堆積を行うと、同図（Ｂ）に示すよう
に、薄膜１２は薄膜ｌｌ上にのみ成長し、基板１０上に
は成長しないという現象を生じさせることができる。こ
の現象を利用することで、自己整合的に成形されたＱ膜
１２を成長させることができ、従来のようなレジストを
用いたリングラフィ工程の省略が可能となる。First, as shown in FIG.
A thin film 11 made of a material different from O in the above-mentioned factors is formed at a desired portion. Then, when a thin film made of an appropriate material is deposited under appropriate deposition conditions, a phenomenon occurs in which the thin film 12 grows only on the thin film 11 and does not grow on the substrate 10, as shown in FIG. can be caused. By utilizing this phenomenon, the Q film 12 formed in a self-aligned manner can be grown, and the conventional phosphorography process using a resist can be omitted.
このような選択形成法による堆積を行うことができる材
料としては、たとえば基板１０としてＳｉＯ２、薄膜１
１としてＳｉ、 ＧａＡｓ、窒化シリコン、そして堆積
させる薄膜１２としてＳｉ、 Ｗ、ＧａＡｓ、 ＩｎＰ
等がある。Materials that can be deposited by such a selective formation method include, for example, SiO2 as the substrate 10 and a thin film 1.
1 is Si, GaAs, silicon nitride, and the thin film 12 to be deposited is Si, W, GaAs, InP.
etc.
第４図は、Ｓｉ０２の堆積面上窒化シリコンの堆積面上
の核形成密度の経時変化を示すグラフである。FIG. 4 is a graph showing the change over time in the nucleation density on the SiO2 deposition surface and the silicon nitride deposition surface.
同グラフが示すように、堆積を開始して間もなく５ｉ０
２Ｊ：での核形成密度は１０３ ｃｍ−２以下で飽和し
、２０分後でもその値はほとんど変化しない。As the graph shows, 5i0
The nucleation density at 2J: is saturated below 103 cm-2, and the value hardly changes even after 20 minutes.
それに対して窒化シリコン（Ｓｉ３ Ｎ ４ ） 上で
は、〜４ Ｘ１０５ ａｒｍ−２で一旦飽和し、それが
ら１０分はど変化しないが、それ以降は急激に増大する
。On the other hand, on silicon nitride (Si3 N4), it is once saturated at ~4.times.105 arm-2, does not change much for 10 minutes, but increases rapidly after that.
なお、この測定例では、５ｉＣ１４ガスを■２ガスで希
釈し、圧力１７５ Ｔｏｒｒ、温度１０００”０ （７
）条件下でＣＶＤ法により堆積した場合を示している。In this measurement example, 5iC14 gas was diluted with ■2 gas, pressure was 175 Torr, temperature was 1000"0 (7
) shows the case of deposition by the CVD method under the following conditions.
他にＳｉＨ４、５ｉ）Ｉ ２ Ｃ１２、５ｉＨＣ＋ ３
、 ＳｉＦ ４等を反応ガスとして用いて、圧力、温
度等を調整することで同様の作用を得ることができる。Also SiH4, 5i) I 2 C12, 5iHC+ 3
, SiF 4 or the like as a reaction gas, and by adjusting the pressure, temperature, etc., a similar effect can be obtained.
また、真空蒸着でも可能である。Vacuum deposition is also possible.
この場合、５ｉ０２上の核形成はほとんど問題とならな
いが、反応ガス中に）１Ｇ＋ガスを添加することで、５
ｉ０２上での核形成を更に抑制し、Ｓｉ０２上でのＳｉ
の堆積を皆無にすることができる。In this case, nucleation on 5i02 is hardly a problem, but by adding 1G+ gas to the reaction gas,
Further suppressing nucleation on i02, Si on Si02
It is possible to completely eliminate the accumulation of
このような現象は、Ｓｉ０２および窒化シリコンの材料
表面のＳｉに対する吸着係数、脱離係数、表面拡散係数
等の差によるところが大きいが、Ｓｉ原子自身によって
５ｉ０２が反応し、蒸気圧が高い一酸化シリコンが生成
されることでＳｉ０２自身がエツチングされ、窒化シリ
コンＬではこのようなエツチング現象は生じないという
ことも選択堆積を生じさせる原因となっていると考えら
れる（Ｔ、Ｙｏｎｅｈａｒａ、Ｓ、Ｙｏｇｈｉｏｋａ、
Ｓ、Ｍｉｙａｚａｗａ Ｊｏｕｒｎａｌ ｏｆＡｐｐｌ
ｉｅｄ Ｐｈｙｓｉｃｓ ５３．１３８３９．１９８２
） 。This phenomenon is largely due to differences in the adsorption coefficient, desorption coefficient, surface diffusion coefficient, etc. for Si on the material surfaces of Si02 and silicon nitride, but 5i02 reacts with the Si atoms themselves, and silicon monoxide, which has a high vapor pressure, The fact that Si02 itself is etched by the generation of , and such an etching phenomenon does not occur with silicon nitride L is thought to be a cause of selective deposition (T, Yonehara, S, Yoghioka,
S, Miyazawa Journal of Appl
ied Physics 53.13839.1982
).
このように堆積面の材料としてＳｉ０２および窒化シリ
コンを選択し、堆積材料としてシリコンを選択すれば、
同グラフに示すように十分に大きな核形成密度差を得る
ことができる。なお、ここでは堆積面の材料として５ｉ
０２が望ましいが、これに限らす５ｉＯｒであっても核
形成密度差を得ることができる。In this way, if Si02 and silicon nitride are selected as the materials of the deposition surface and silicon is selected as the deposition material,
As shown in the same graph, a sufficiently large difference in nucleation density can be obtained. Note that here, 5i is used as the material for the deposition surface.
02 is desirable, but it is not limited to this, but even with 5iOr, a difference in nucleation density can be obtained.
勿論、これらの材料に限定されるものではなく、核形成
密度の差が同グラフで示すように核の密度で１０２倍以
−ヒであれば十分であり、後に例示するような材料によ
っても堆積膜の十分な選択形成を行うことができる。Of course, the material is not limited to these materials, and it is sufficient that the difference in nucleation density is 102 times or more in terms of the density of nuclei, as shown in the same graph, and deposits can also be achieved with materials such as those exemplified later. Sufficient selective formation of the film can be performed.
この核形成密度差を得る他の方法としては、５ｉ０２−
ヒに局所的にＳｉやＮ等をイオン注入して過剰にＳｉや
Ｎ等を有する領域を形成してもよい。Another method to obtain this nucleation density difference is 5i02-
A region having an excessive amount of Si, N, etc. may be formed by locally ion-implanting Si, N, or the like.
このような選択堆積法を利用し、堆積面の材料より核形
成密度の十分大きい異種材料を単一の核だけが成長する
ように十分微細に形成することによって、その微細な異
種材料の存在する箇所だけに単結晶を選択的に成長させ
ることができる。By using such a selective deposition method and forming a foreign material with a nucleation density sufficiently higher than that of the material on the deposition surface in a sufficiently fine structure so that only a single nucleus grows, the presence of the fine foreign material can be reduced. It is possible to selectively grow single crystals only in certain locations.
なお、単結晶の選択的成長は、堆積面表面の電子状態、
特にダングリングボンドの状態によって決定されるため
に、核形成密度の低い材料（たとえばＳｉ０２ ）はバ
ルク材料である必要はなく、任意の材料や基板等の表面
のみに形成されて北記堆積面を成していればよい。The selective growth of single crystals depends on the electronic state on the surface of the deposition surface,
In particular, since it is determined by the state of dangling bonds, materials with low nucleation density (e.g. Si02) do not need to be bulk materials, but can be formed only on the surface of any material or substrate etc. It is sufficient if it has been completed.
第５図（Ａ）〜（Ｃ）は、単結晶形成方法の一例を示す
形成工程図であり、第６図（Ａ）および（Ｂ）は、第５
図（Ａ）および（Ｃ）における基板の斜視図である。5(A) to 5(C) are formation process diagrams showing an example of a method for forming a single crystal, and FIGS. 6(A) and 6(B) are
It is a perspective view of the board|substrate in figures (A) and (C).
まず、第５図（Ａ）および第６図（Ａ）に示すように、
基板１３上に、選択堆積をｃｆｒ７１にする核形成密度
の小さい薄膜１４を形成し、その上に核形成密度の大き
い異種材料を薄く堆積させ、リングラフィ等によってバ
ターニングすることで異種材料１５を十分微細に形成す
る。ただし、基板１３の大きさ、結晶構造および組成は
任意のものでよく、機ず＠素子が形成された基板であっ
てもよい。First, as shown in FIG. 5(A) and FIG. 6(A),
A thin film 14 with a low nucleation density is formed on the substrate 13 with a selective deposition of CFR 71, a different material 15 with a high nucleation density is thinly deposited on top of the thin film 14, and the different material 15 is patterned by phosphorography or the like. Form sufficiently finely. However, the size, crystal structure, and composition of the substrate 13 may be arbitrary, and it may be a substrate on which a device is formed.
また、異種材料１５とは、上述したように、ＳｉやＮ等
をｓｒｉｒｐｍｒ４にイオン注入して形成される過剰に
ＳｉやＮ等を有する変質領域も含めるものとする。Further, as described above, the foreign material 15 includes a degraded region having an excessive amount of Si, N, etc., which is formed by ion-implanting Si, N, etc. into the srirp mr 4.
次に、適当な堆積条件によって異種材料１５だけに薄膜
材料の単一の核が形成される。すなわち、異種材料１５
は、単一の核のみが形成される程度に十分微細に形成す
る必要がある。異種材料１５の大きさは、材料の種類に
よって異なるが、数ミクロン以下であればよい、更に、
核は単結晶構造を保ちながら成長し、第５図（Ｂ）に示
すように島状の単結晶粒１６となる。島状の単結晶粒１
６が形成されるためには、すでに述べたように、Ｑｉｔ
）０１４上で全く核形成が起こらないように条件を決め
ることが必要である。A single core of thin film material is then formed in only the dissimilar material 15 by suitable deposition conditions. That is, different materials 15
must be formed sufficiently finely so that only a single nucleus is formed. The size of the different material 15 varies depending on the type of material, but may be several microns or less.
The nuclei grow while maintaining the single crystal structure and become island-shaped single crystal grains 16 as shown in FIG. 5(B). Island-shaped single crystal grain 1
In order for 6 to be formed, as already mentioned, Qit
) It is necessary to determine conditions such that no nucleation occurs on 014.
島状の単結晶粒１６は単結晶構造を保ちながら異種材料
１５を中心して更に成長し、同図（Ｃ）に示すように略
円錐形の尖頭部を有す、る回転体の単結晶１６ａとなる
。The island-shaped single crystal grains 16 further grow around the dissimilar material 15 while maintaining the single crystal structure, and as shown in FIG. It becomes 16a.
このように堆積面の材料である薄膜１４が基板１３上に
形成されているために、支持体となる基板１３は任意の
材料を使用することができ、更に基板１３に機能素子等
が形成されたものであっても、その上に容易に単結晶を
形成することができる。Since the thin film 14, which is the material of the deposition surface, is formed on the substrate 13, any material can be used for the substrate 13, which serves as a support, and furthermore, functional elements etc. can be formed on the substrate 13. single crystals can be easily formed thereon.
なお、Ｌ記実施例では、堆積面の材料を薄膜１４で形成
したが、選択堆積を可能にする核形成密度の小さい材料
から成る基板をそのまま用いて、単結晶を同様に形成し
てもよい。In Example L, the material of the deposition surface was formed from the thin film 14, but a single crystal may be similarly formed by using a substrate made of a material with a low nucleation density that enables selective deposition. .
第７図（Ａ）〜（Ｃ）は、単結晶形成方法の他の例を示
す形成工程図である。FIGS. 7(A) to 7(C) are forming process diagrams showing other examples of the single crystal forming method.
同図に示すように、選択堆積を可能にする核形成密度の
小さい材料からなる基板１４上に、異種材料１５をト分
微小に形成することで、第５図に示した例と同様にして
単結晶を形成することができる。As shown in the figure, a different material 15 is formed minutely on a substrate 14 made of a material with a low nucleation density that enables selective deposition. Single crystals can be formed.
（Ａ体側）
次に、上記例における単結晶層の具体的形成方法を説明
する。(Body A side) Next, a specific method for forming the single crystal layer in the above example will be described.
５ｉ０２を薄膜１４の堆積面材料とする。勿論、石英基
板を用いてもよいし、金属、半導体、磁性体、圧電体、
絶縁体等の任意の基板上に、スパッタ法、ＣＶＤ法、真
空蒸着法等を用いて基板表面にＳｉ０２層を形成しても
よい、また、堆積面材料としてはＳｉ０２が望ましいが
、 ＳｉＯｘとしてＸの値を変化させたものでもよい
。5i02 is used as the deposition surface material of the thin film 14. Of course, a quartz substrate may be used, and metals, semiconductors, magnetic materials, piezoelectric materials,
A Si02 layer may be formed on the surface of any substrate such as an insulator by sputtering, CVD, vacuum evaporation, etc.Although Si02 is preferable as the deposition surface material, X as SiOx may be used. It is also possible to change the value of .
こうして形成されたＳ４０２層１４上に減圧気相成長法
によって窒化シリコン層（ここではＳｉ３ Ｎ ４層）
又は多結晶シリコン層を異種材料として堆積させ、通常
のりソグラフィ技術又はＸ線、４子線若しくはイオン線
を用いたりソグラフィ技術で窒化シリコン層又は多結晶
シリコン層をパターニングし、数ミクロン以下、望まし
くは〜１１上以下の微小な異種材料１５を形成する。A silicon nitride layer (here, Si3N 4 layer) is formed on the S402 layer 14 thus formed by low pressure vapor phase epitaxy.
Alternatively, a polycrystalline silicon layer is deposited as a dissimilar material, and the silicon nitride layer or polycrystalline silicon layer is patterned using ordinary lithography techniques or X-rays, quadruplets, or ion beams, or by lithography techniques to form a layer of a few microns or less, preferably. A microscopic dissimilar material 15 having a size above 11 or less is formed.
続いて、ＩＣ＋１！−Ｈ２と、ＳｉＨ２０１２、５ｉＣ
１４、ＳｉＨ０１３、ＳｉＦ ４若しくはＳｉＨ４との
混合ガスを用いて上記基板１１上にＳｉを選択的に成長
させる。Next, IC+1! -H2, SiH2012, 5iC
14. Selectively grow Si on the substrate 11 using a mixed gas of SiH013, SiF4, or SiH4.
その際の基板温度は７００〜１１００℃、圧力は約１０
０丁ｏｒｒである。At that time, the substrate temperature was 700 to 1100℃, and the pressure was about 10℃.
It is 0 chome orr.
数十分程度の時間で、Ｓｉ０２上の窒化シリコン又は多
結晶シリコンの微細な異種材料１５を中心として、単結
晶のＳｉの粒１６が成長し、最適の成長条件とすること
で、その大きさは上記の異種材料程度の大きさから数＋
ｐｍ程度に制御された単結晶１６ａが形成される。In a period of about several tens of minutes, single-crystal Si grains 16 grow around the fine foreign material 15 of silicon nitride or polycrystalline silicon on Si02, and by setting the optimal growth conditions, the size of the grains can be increased. is a number + from the size of the above dissimilar materials
A single crystal 16a controlled to about pm is formed.
（窒化シリコンの組成）
これまで述べてきたような堆積面材料と異種材料との十
分な核形成密度差を得るには、Ｓｉ３ Ｎ ４に限定さ
れるものではなく、窒化シリコンの組成を変化させたも
のでもよい。(Composition of silicon nitride) In order to obtain a sufficient nucleation density difference between the deposited surface material and the different material as described above, it is not limited to Si3N4, but the composition of silicon nitride can be changed. It may also be something you have.
ＲＦプラズマ中でＳｉＨ４ガスとＮＨ３ガスとを分解さ
せて低温で窒化シリコン膜を形成するプラズマＣＶＤ法
では、Ｓ ｉ Ｈ４ガスとＮＨ３ガスとの流量比を変化
させることで、堆積する窒化シリコン膜のＳｉとＮの組
成比を大幅に変化させることができる。In the plasma CVD method, which forms a silicon nitride film at low temperatures by decomposing SiH4 gas and NH3 gas in RF plasma, the amount of silicon nitride film to be deposited is reduced by changing the flow rate ratio of SiH4 gas and NH3 gas. The composition ratio of Si and N can be changed significantly.
第８図は、ＳｉＨ４とＮＨ３の流量比と形成された窒化
シリコン膜中のＳｔおよびＮの組成比との関係を示した
グラフである。FIG. 8 is a graph showing the relationship between the flow rate ratio of SiH4 and NH3 and the composition ratio of St and N in the formed silicon nitride film.
この時の堆積条件は、ＲＦ出力１７５Ｗ、基板温度３８
０℃であり、ＳｉＨ４ガス流量を３００ｃｃ／ｍｉｎに
固定し、ＮＨ３ガスの流星を変化させた、同グラフに示
すようにＮ Ｈ３／ Ｓ ｉ Ｈ４のガス流量比を４〜
１０へ変化させると、窒化シリコン膜中のＳ ｉ ／
Ｎ比は１．１〜０．５８に変化することがオージェ電子
分光法によって明らかとなった。The deposition conditions at this time were: RF output 175W, substrate temperature 38W.
As shown in the same graph, the SiH4 gas flow rate was fixed at 300cc/min and the NH3 gas meteor was varied.
When changing to 10, S i / in the silicon nitride film
Auger electron spectroscopy revealed that the N ratio varied from 1.1 to 0.58.
マタ、減圧ＣＶＤ法テＳｉＨ２Ｃ１２ガスとＮＨ３ガス
とを導入し、０ 、３Ｔｏ ｒ ｒの減圧下、温度約８
００℃の条件で形成した窒化シリコン膜の組成は、はぼ
化学量論比であるＳｉ３ Ｎ ４ （Ｓｉ／Ｎ ＝０
．７５）に近いものであった。In the low-pressure CVD method, SiH2C12 gas and NH3 gas were introduced, and the temperature was about 8 ℃ under a reduced pressure of 0.3 Torr.
The composition of the silicon nitride film formed at 00°C is almost stoichiometric, Si3N4 (Si/N = 0
．． 75).
また、ＳｉをアンモニアあるいはＮ２中で約１２００℃
で熱処理すること（熱窒化法）で形成される窒化シリコ
ン膜は、その形成方法が然乎衡下で行われるために、更
に化学量論比に近い組成を得ることができる。In addition, Si was heated to about 1200°C in ammonia or N2.
A silicon nitride film formed by heat treatment (thermal nitridation method) can have a composition closer to the stoichiometric ratio because the formation method is carried out under balanced conditions.
以りの様に種々の方法で形成した窒化シリコンをＳｔの
抜形Ｊ＆密度が５ｉ０２より高い堆積面材料として用い
てＥ記Ｓｔの核を成長させると、その組成比により核形
成密度に差が生じる。When silicon nitride formed by various methods as described above is used as a deposition surface material with a higher density than 5i02 of St, and the nuclei of E listed St are grown, there is a difference in the nucleation density depending on the composition ratio. arise.
第９図は、Ｓｔ／ＮＡＩＸ＆比と核形成密度との関係を
示すグラフである。同グラフに示すように、窒化シリコ
ン膜の組成を変化させることで、その上に成長するＳｉ
の核形成密度は大幅に変化する。この時の核形成条件は
、５ｉＣ１４ガスを１７５Ｔｏｒｒに減圧し、１ｏｏｏ
℃−ｒＨ２と反応させてＳｉを生成させる。FIG. 9 is a graph showing the relationship between St/NAIX & ratio and nucleation density. As shown in the same graph, by changing the composition of the silicon nitride film, the Si grown on it can be
The nucleation density of varies significantly. The nucleation conditions at this time were to reduce the pressure of 5iC14 gas to 175 Torr, and to
℃-rH2 to generate Si.
このように窒化シリコンの組成によって核形成密度が変
化する現象は、単一の核を成長させる程度に七分微細に
形成される異種材料としての窒化シリコンの大きさに影
響を与える。すなわち、核形成密度が大きい組成を有す
る窒化シリコンは、非常に微細に形成しない限り、単一
の核を形成することができない。This phenomenon in which the nucleation density changes depending on the composition of silicon nitride affects the size of silicon nitride as a heterogeneous material that is formed to be seven times finer to the extent that a single nucleus can be grown. That is, silicon nitride having a composition with a high nucleation density cannot form a single nucleus unless it is formed very finely.
したがって、核形成密度と、単一の核が選択できる最適
な窒化シリコンの大きさとを選択する必要がある。たと
えば〜１０５ｃｍ−２の核形成密度を得る堆積条件では
、窒化シリコンの大きさは約４ｇｍ以ドであれば単一の
核を選択できる。Therefore, it is necessary to select the nucleation density and the optimum silicon nitride size for selecting a single nucleus. For example, for deposition conditions that yield a nucleation density of .about.10@5 cm@-2, a single core can be selected if the silicon nitride size is approximately 4 gm or less.
（イオン注入による異種材料の形成）
Ｓｉに対して核形成密度差を実現する方法として、核形
成密度の低い堆積面材料である５ｉ０２の表面に局所的
にＳｉ 、Ｎ、Ｐ、Ｂ、Ｆ、Ａｒ。(Formation of different materials by ion implantation) As a method to realize a difference in nucleation density for Si, Si, N, P, B, F, Ar.
Ｈｅ 、Ｃ：、Ａｓ 、Ｇａ、Ｇｅ等をイオン注入して
５ｉ０２の堆積面に変質領域を形成し、この変質領域を
核形成密度の高い堆積面材料としても良６い。An altered region may be formed on the deposition surface of 5i02 by ion implantation of He, C:, As, Ga, Ge, etc., and this altered region may be used as a deposition surface material with a high nucleation density.
例えば、Ｓｉ０２表面をレジストで多い、所望の箇所を
露光、現像、溶解させてＳｉ０２表面を部分的に表出さ
せる。For example, a desired portion of the Si02 surface is exposed with a resist, developed, and dissolved to partially expose the Si02 surface.
続いて、ＳｉＦ４ガスをソースガスとして用い、Ｓｉイ
オンを１ＯｋｅＶで１Ｘ１０１６〜ｌＸ１０１８ｃｍ−
２の密度でＳｉ０２表面に打込む。これによる投ｉ杉飛
程は１１４人であり、Ｓｉ０２表面ではＳｉ５度が〜１
０２２ｃｍ−３に達する。Next, using SiF4 gas as a source gas, Si ions were irradiated at 1X1016 to 1X1018 cm- at 1OkeV.
Implant into the Si02 surface with a density of 2. The throwing distance from this is 114 people, and on the Si02 surface, Si5 degree is ~1
It reaches 022 cm-3.
５ｉ０２はもどもと非晶質であるために、Ｓｉイオンを
注入した領域も非晶質である。Since 5i02 is both amorphous, the region into which Si ions are implanted is also amorphous.
なお、変質領域を形成するには、レジストをマスクとし
てイオン注入を行うこともできるが、集束イオンビーム
技術を用いて、レジストマスクを使用せずに絞られたＳ
ｉイオン’１ｓｉ０２表面に注入してもよい。Note that to form the altered region, ion implantation can be performed using a resist as a mask, but focused ion beam technology can be used to form a narrowed S without using a resist mask.
i ions may be implanted into the '1si02 surface.
こうしてイオン注入を行った後、レジストを剥離するこ
とで、Ｓｉ０２面にＳｔが過剰な変質領域が形成される
。このような変質領域が形成されたＳｉ０２堆積面にＳ
ｉを気相成長させる。After performing the ion implantation in this manner, by peeling off the resist, an altered region containing excess St is formed on the Si02 surface. S is deposited on the SiO2 deposition surface where such altered regions are formed.
i by vapor phase growth.
第１Ｏ図は、Ｓｉイオンの注入量と核形成密度との関係
を示すグラフである。FIG. 1O is a graph showing the relationship between the implantation amount of Si ions and the nucleation density.
同グラフに示すように、Ｓｉ十注入＝ｒλが多い程、核
形成密度が増大することがわかる。As shown in the same graph, it can be seen that the larger the Si0 implantation=rλ, the higher the nucleation density.
したがって、変質前域を十分微細に形成することで、こ
の変質領域を異種材料としてＳｉの弔−の核を成長させ
ることができ、−１−述したように単結晶を成長させる
ことができる。Therefore, by forming the pre-altered region sufficiently finely, Si nuclei can be grown using this altered region as a foreign material, and a single crystal can be grown as described above.
なお、変質領域な巾−の核が成長する程度に七分微廁に
形成することは、レジストのバターニングや、集束イオ
ンビームのビームを絞ることによって容易に達成される
。It should be noted that formation of a seven-micron diameter to the extent that a nucleus with the width of the altered region grows can be easily achieved by patterning the resist or narrowing down the focused ion beam.
（ＣＶＤ以外のＳｉ堆請方法）
Ｓｉの選択核形成によって単結晶をＩｌ＆長させるには
、ＣＶＤ法だけではなく、Ｓｉを真空中（＜ ｌ Ｏ−
Ｇ Ｔｏｒｒ）で電子銃により蒸発させ、加熱した基板
に堆積させる方法も用いられる。特に、超高真空中（＜
ｌ Ｏ−９，Ｔｏｒｒ）で蒸着を行うＭ Ｂ Ｅ （
Ｍｏｌｅｃｕｌａｒ Ｂｅａｍ Ｅｐｉｔａｘｙ）法で
は、基板湿度９００℃以りでＳｉビームと５ｉ０２が反
応を始め、５ｉ０２上でのＳｔの核形成は皆無になるこ
とが知られている（Ｔ、Ｙａｎｅｈａｒａ、Ｓ、Ｙｏｓ
ｈｉｏｋａ ａｎｄＳ、Ｍｉｙａｚａｗａ Ｊｏｕｒｎ
ａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ ５３゜
１０ 、ｐ６８３９ 、１９８３）。(Si deposition method other than CVD) In order to increase the length of a single crystal by selective nucleation of Si, not only the CVD method but also Si deposition method in vacuum (< l O−
A method is also used in which the material is evaporated with an electron gun at a temperature of 100 mph (G Torr) and deposited on a heated substrate. In particular, in ultra-high vacuum (<
MB E (1 O-9, Torr)
In the Molecular Beam Epitaxy (Molecular Beam Epitaxy) method, it is known that the Si beam and 5i02 begin to react when the substrate humidity exceeds 900°C, and nucleation of St on 5i02 is completely eliminated (T, Yanehara, S, Yos.
hioka and S, Miyazawa Journ
al of Applied Physics 53°10, p6839, 1983).
この現象を利用して５ｉ０２上に点在させた微小な窒化
シリコンに完全な選択性をもってＳｉの単一の核を形成
し、そこに単結晶Ｓｉを成長させることができた。この
時の堆積条件は、真空度１０ ”’８ Ｔｏｒｒ以下、
Ｓｉビーム強度９．７×１０ Ｌ４ａｔｏｍｇ ／ ｃ
ｍ２ ｍ ｓｅｃ 、基板温度９００℃〜ｔｏｏｏ℃で
あった。Utilizing this phenomenon, we were able to form a single Si nucleus with complete selectivity in minute silicon nitride dots on 5i02, and grow single crystal Si there. The deposition conditions at this time were a vacuum level of 10'''8 Torr or less;
Si beam intensity 9.7×10 L4atomg/c
m2 m sec, and the substrate temperature was 900°C to tooo°C.
この場合、５ｉ０２ ＋ｓｒ→２ＳｉＯ↑という反応に
より、ＳｉＯという蒸気圧の著しく高い反応生成物が形
成され、この蒸発による５ｉ０２自身のＳｉによるエツ
チングが生起している。In this case, due to the reaction 5i02 +sr→2SiO↑, a reaction product called SiO having a significantly high vapor pressure is formed, and this evaporation causes etching of 5i02 itself by Si.
これに対して、窒化シリコン上では上記エツチング現象
は起こらず、核形成、そして堆積が生じている。On the other hand, on silicon nitride, the above etching phenomenon does not occur, but nucleation and deposition occur.
したがって、核形成密度の高い堆積面材料としては、窒
化シリコン以外に、タンタル酸化物（Ｔａ ２０ ｓ
） 、窒化シリコン酸化物（ＳｉＯＮ）等を使用しても
同様の効果を得ることができる。すなわち、これらの材
料を微小形成して上記異種材料とすることで、同様に単
結晶を成長させることができる。Therefore, in addition to silicon nitride, tantalum oxide (Ta 20 s
), silicon nitride oxide (SiON), etc. can also be used to obtain similar effects. That is, by micro-forming these materials to form the above-mentioned dissimilar materials, a single crystal can be similarly grown.
［発明の効果］
以上詳細に説明したように１本発明の電子放出素子によ
れば、導電部材上に耐熱性導電膜を形成したことにより
、電子放出部を耐熱性の高い導電膜とし、発熱による溶
融等による尖頭部の形状変化を防ぎ、特性変化を防ぐこ
とができる。また。[Effects of the Invention] As explained above in detail, according to the electron-emitting device of the present invention, a heat-resistant conductive film is formed on the conductive member, so that the electron-emitting part is made of a highly heat-resistant conductive film, and heat generation is prevented. It is possible to prevent changes in the shape of the pointed head due to melting, etc., and prevent changes in characteristics. Also.
尖頭部を有する電極の大部分を導電率の亭い導電部材で
構成することができ、不要な発熱を抑えることができる
。Most of the electrode having a pointed head can be made of a conductive member with low conductivity, and unnecessary heat generation can be suppressed.
なお、導電部材の製造方法として、絶縁層に、この絶縁
層の材料より核形成密度が十分大きく、１つ単一の核だ
けが成長する程度に十分微細な異種材料を形成し、この
異種材料に成長した単一の核を中心として結晶を成長さ
せる結晶成長方法を用いれば、次のような効果がある。In addition, as a manufacturing method for the conductive member, a dissimilar material having a sufficiently higher nucleation density than the material of the insulating layer and sufficiently fine to the extent that only one single nucleus grows is formed in the insulating layer, and this dissimilar material is If a crystal growth method is used in which a crystal is grown around a single nucleus that has been grown, the following effects can be achieved.
（１）尖頭部を有する電極の形状が、堆積面、異種材料
、導電部材の材質、堆積条件等の製造条件で決定され、
絶縁部材、引き出し電極の開口部の１注量度と独立して
形成されるので、所望の大きさの電極を形成することが
でき、またその大きさのバラツキを抑えることができる
。(1) The shape of the electrode having a pointed head is determined by manufacturing conditions such as the deposition surface, different materials, the material of the conductive member, and deposition conditions;
Since the insulating member and the opening of the extraction electrode are formed independently of each other, an electrode of a desired size can be formed, and variations in the size can be suppressed.
（２）尖頭部を有する電極の位置が異種材料の位置精度
で決められるので、所望の位ｔに高精度に作製すること
ができ、複数の電子放出口を有するマルチ型電子放出素
子をファインピッチで作製することができる。(2) Since the position of the electrode with the pointed head is determined by the positional accuracy of different materials, it can be manufactured at the desired position with high precision, and a multi-type electron-emitting device with multiple electron-emitting ports can be fabricated finely. Can be made with pitch.
（３）単結晶特有の尖頭部が形成され、電子放出部の形
状が均一［つシャープに形成されるので、特別な針状加
工が不要であり、電界強度を均−且つ強いものとし、動
作開始電圧の範囲のバラツギを抑え、電子放出効率を向
上させることができる。(3) A pointed head peculiar to a single crystal is formed, and the shape of the electron emitting part is uniform and sharp, so no special needle-like processing is required, and the electric field strength is uniform and strong. It is possible to suppress variations in the range of operation start voltage and improve electron emission efficiency.
（４）従来、単結晶のＴ：＆長が困難であった非晶質の
絶縁基板にも単結晶を成長させることが容易となり、高
耐圧な電子放出素子を提供することあができる。(4) It becomes easy to grow a single crystal even on an amorphous insulating substrate, where it has been difficult to achieve the T: & length of a single crystal, and it is possible to provide an electron-emitting device with high breakdown voltage.
（５）通常の半導体製造プロセスで製造することができ
るので、簡易な工程で高集積化を行なうことができる。(5) Since it can be manufactured using a normal semiconductor manufacturing process, high integration can be achieved with a simple process.
また、上記製造方法においては、堆積面を所望の材料の
下地基村上に形成することができ、例えば堆積面を放熱
性の高い基体に形成することで、信頼性を向上させるこ
とが回部となる。In addition, in the above manufacturing method, the deposition surface can be formed on the base layer of the desired material. For example, reliability can be improved by forming the deposition surface on a substrate with high heat dissipation. Become.
第１図は本発明の電子放出素子の一実施例を説明するた
めの概略的部分断面図である。
第２図は上記実施例による電子放出素子の配線を説明す
るための概略的斜視図である。
第３図（Ａ）および第３図（Ｂ）は選択堆積法の説明図
である。
第４図は、ＳｉＯ２の堆積面上窒化シリコンの堆積面上
の核形成密度の経時変化を示すグラフである。
第５図（Ａ）〜（Ｃ）は、単結晶形成方法の一例を示す
形成工程図である。
第６図（Ａ）および第６図（Ｂ）は、第５図（Ａ）およ
び第５図（Ｃ）における基板の斜視図である。
第７図（Ａ）〜（Ｃ）は、単結晶形成方法の他の例を示
す形成工程図である。
第８図は、ＳｉＨ４とＮＨ３の流星比と形成された窒化
シリコン膜中のＳｉおよびＮの組成比との関係を示した
グラフである。
第９図は、Ｓｉ／Ｎ１１ｉ成比と核形成密度との関係を
示すグラフである。
第１０図は、Ｓｔイオンの注入賃と核形成密度との関係
を示すグラフである。
：５１１図は電界効果型の電子放出素子の一例を示す概
略的部分断面図である。
ニー−・・・基体
２・・・・・絶縁層
３争・・φ・核形成ヘース
４・・−・−導電部材
５曇−・・・耐熱性導電膜
６・・・・・引き出し電極
７・・ψ・―開目部
８・・・・・尖頭部を有する電極
９ 争 争 ・ ・ −配線
代理人 弁理上 山 下゛ 穣 平
第１図
第２図
第３図
（Ａ）
１゜
（Ｅ３）
１１Ｌ々朋（４ｆ）
（Ａ）
（Ｅ３）
貴５８ 図
ＮＨ３／ＳｉＨ４ヌＬ量比
第９図
０ ０．５ １．
Ｏ５＊／Ｎ、？且八貝ムFIG. 1 is a schematic partial cross-sectional view for explaining one embodiment of the electron-emitting device of the present invention. FIG. 2 is a schematic perspective view for explaining the wiring of the electron-emitting device according to the above embodiment. FIG. 3(A) and FIG. 3(B) are illustrations of the selective deposition method. FIG. 4 is a graph showing the change over time in the nucleation density on the SiO2 deposition surface and the silicon nitride deposition surface. FIGS. 5A to 5C are formation process diagrams showing an example of a method for forming a single crystal. 6(A) and 6(B) are perspective views of the substrates in FIG. 5(A) and FIG. 5(C). FIGS. 7(A) to 7(C) are forming process diagrams showing other examples of the single crystal forming method. FIG. 8 is a graph showing the relationship between the meteor ratio of SiH4 and NH3 and the composition ratio of Si and N in the formed silicon nitride film. FIG. 9 is a graph showing the relationship between the Si/N11i composition ratio and the nucleation density. FIG. 10 is a graph showing the relationship between St ion implantation rate and nucleation density. 511 is a schematic partial sectional view showing an example of a field effect type electron-emitting device. Knee: Substrate 2: Insulating layer 3: φ: Nucleation layer 4: Conductive member 5: Heat-resistant conductive film 6: Extracting electrode 7 ... ψ - Opening part 8 ... Electrode 9 having a pointed head Dispute - Wiring agent Patent attorney Yamashita゛ Jo Hei Figure 1 Figure 2 Figure 3 (A) 1゜(E3) 11L (4f) (A) (E3) 58 Figure NH3/SiH4 NuL amount ratio Figure 9 0 0.5 1.
O5*/N,? And eight shellfish
Claims (3)
部の近傍に設けられた引き出し電極とを有する電子放出
素子において、 前記尖頭部を有する電極を、尖頭部を有する導電部材と
、この導電部材上に形成された耐熱性導電膜とから構成
したことを特徴とする電子放出素子。(1) An electron-emitting device having an electrode having a pointed head provided on a deposition surface, and an extraction electrode provided near the pointed head via an insulating member provided on the deposition surface. An electron-emitting device according to the present invention, wherein the electrode having a pointed portion is composed of a conductive member having a pointed portion and a heat-resistant conductive film formed on the conductive member.
前記堆積面の材料より核形成密度が十分大きく、且つ単
一の核だけが成長する程度に十分微細な異種材料が設け
られ、この異種材料に成長した単一の核によって成長し
た結晶によって形成されている特許請求の範囲第１項記
載の電子放出素子。(2) the electrically conductive member having the pointed head is on the deposition surface;
A dissimilar material having a nucleation density sufficiently higher than that of the material of the deposition surface and sufficiently fine that only a single nucleus grows is provided, and the dissimilar material is formed by a crystal grown by a single nucleus grown in the dissimilar material. An electron-emitting device according to claim 1.
請求の範囲第２項記載の電子放出素子。(3) The electron-emitting device according to claim 2, wherein the deposition surface is formed on a desired base material.
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5211387A JP2612569B2 (en) | 1987-03-09 | 1987-03-09 | Electron-emitting device |
| EP19880101626 EP0278405B1 (en) | 1987-02-06 | 1988-02-04 | Electron emission element and method of manufacturing the same |
| DE19883856492 DE3856492T2 (en) | 1987-02-06 | 1988-02-04 | A display device containing an electron emission element |
| EP96100917A EP0713241B1 (en) | 1987-02-06 | 1988-02-04 | A display device comprising an electron emission element |
| DE19883855482 DE3855482T2 (en) | 1987-02-06 | 1988-02-04 | Electron emitting element and its manufacturing process |
| AU11343/88A AU1134388A (en) | 1987-02-06 | 1988-02-05 | Electron emission element and method of manufacturing the same |
| US07/746,154 US5176557A (en) | 1987-02-06 | 1991-08-14 | Electron emission element and method of manufacturing the same |
| AU87749/91A AU631327B2 (en) | 1987-02-06 | 1991-11-11 | Electron emission element and method of manufacturing the same |
| US07/848,727 US5201681A (en) | 1987-02-06 | 1992-03-09 | Method of emitting electrons |
| US08/011,006 US5361015A (en) | 1987-02-06 | 1993-01-29 | Electron emission element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5211387A JP2612569B2 (en) | 1987-03-09 | 1987-03-09 | Electron-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63221528A true JPS63221528A (en) | 1988-09-14 |
| JP2612569B2 JP2612569B2 (en) | 1997-05-21 |
Family
ID=12905809
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|---|---|---|---|
| JP5211387A Expired - Fee Related JP2612569B2 (en) | 1987-02-06 | 1987-03-09 | Electron-emitting device |
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| Country | Link |
|---|---|
| JP (1) | JP2612569B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04332423A (en) * | 1991-02-08 | 1992-11-19 | Agency Of Ind Science & Technol | Electric field emitting element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04332423A (en) * | 1991-02-08 | 1992-11-19 | Agency Of Ind Science & Technol | Electric field emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2612569B2 (en) | 1997-05-21 |
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