JPS63170896A - Electroluminescence display device - Google Patents
Electroluminescence display deviceInfo
- Publication number
- JPS63170896A JPS63170896A JP62001689A JP168987A JPS63170896A JP S63170896 A JPS63170896 A JP S63170896A JP 62001689 A JP62001689 A JP 62001689A JP 168987 A JP168987 A JP 168987A JP S63170896 A JPS63170896 A JP S63170896A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- display element
- emitting layer
- insulator
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005401 electroluminescence Methods 0.000 title 1
- 239000012212 insulator Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 15
- 238000009413 insulation Methods 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- WHOPEPSOPUIRQQ-UHFFFAOYSA-N oxoaluminum Chemical compound O1[Al]O[Al]1 WHOPEPSOPUIRQQ-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、コンピュータの端末機＝等の如き種々の分野
に用いられる薄膜のエレクトロルミネセンス表示素子の
改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to improvements in thin film electroluminescent display elements used in various fields such as computer terminals.
（従来技術）
一般に、この種のエレクトロルミネセンス表示素子とし
てガラス板の如き絶縁基板とこの絶縁基板上に１組の電
極を挟んて薄膜絶縁して配置されたエレクトロルミネセ
ンス特性を有する発光層とから成っているいわゆる薄膜
三層構造の表示素子と、セラミック等の絶縁基板とこの
絶縁基板上に設けられた第１の電極とこの第１の電極の
１−に設けられたＢ ａ Ｔ １０１． Ｐ ｂ Ｔｉ
ｃ）＋の如き比誘電率が５０００以上の高誘電率材料の
絶縁体とこの絶縁体の上に設けられた発光層とこの発光
層の」二に設けられた第２の電極（透明電極）とから成
っているいわゆる高誘電率絶縁構造（セラミック構造）
の表示素子とがある。この後者の高誘電率絶縁構造の表
示素子は絶縁体として焼成した高誘電体な厚膜で形成す
るために結品のグレインサイズか数７ｔｍにまで成長す
るので数千λの厚みで形成される薄膜三層構造のものに
比べて比誘電率か２００〜１ｏｏｏ倍以上大きく、従っ
て９例えば９εが１０．０００のＢａＴｉ０．をｌＯＢ
ｍて形成する場合には、これはεが５０て２００Ａの薄
膜に電気的に等価であり、このため絶縁膜を見掛は上昇
室にＲくすることかでき、従ってこの部分での電圧降下
か通常の８０〜１００Ｖに比べて１／１０以下に抑えら
れるので低電圧駆動が回部となる。従来の薄膜構造の表
示素子は３０００〜５０００Ａの絶縁膜厚が要求されて
いたか、これはピンホールによって絶縁耐圧か劣化する
のを防止するためである。また、高誘電率絶縁構造の表
示素子の絶縁耐圧は絶縁膜の厚みか薄Ｖａ造の表示素子
に比べて２０〜３０倍と著しく大きいため非常に大きい
。(Prior Art) Generally, this type of electroluminescent display element consists of an insulating substrate such as a glass plate, and a light emitting layer having electroluminescent properties arranged on the insulating substrate with a thin film insulated between them with a pair of electrodes sandwiched therebetween. A display element having a so-called thin film three-layer structure consisting of an insulating substrate made of ceramic or the like, a first electrode provided on this insulating substrate, and a B a T 101 provided at 1- of this first electrode. P b Ti
c) An insulator made of a high-permittivity material with a relative dielectric constant of 5,000 or more, such as +, a light-emitting layer provided on this insulator, and a second electrode (transparent electrode) provided on the second side of this light-emitting layer. A so-called high dielectric constant insulation structure (ceramic structure) consisting of
There are several display elements. This latter display element with a high dielectric constant insulating structure is formed from a thick film with a high dielectric constant fired as an insulator, so the grain size of the crystal grows to several 7 tm, so it is formed with a thickness of several thousand λ. The dielectric constant is 200 to 100 times higher than that of a thin film three-layer structure, and therefore, for example, BaTi0. lOB
This is electrically equivalent to a 200 A thin film with ε of 50 m, and therefore the insulating film can be made to have an apparent R in the rising chamber, and therefore the voltage drop in this area is reduced. Since the current voltage can be suppressed to 1/10 or less compared to the normal 80 to 100 V, low voltage driving is an advantage. Conventional display elements with a thin film structure are required to have an insulating film thickness of 3,000 to 5,000 A, and this is to prevent dielectric strength from deteriorating due to pinholes. Further, the dielectric strength voltage of a display element having a high dielectric constant insulation structure is extremely large because the thickness of the insulating film is 20 to 30 times greater than that of a display element made of thin Va.
しかし、この高誘電率絶縁構造の表示素子は下側（第１
の電極側）で高誘電率絶縁しており、−ヒ側（第２の電
極側）では第２の電極か発光層の上に直接設けられてい
るために交流駆動時に電極の極性によって発光層に注入
される電子エネルギーか異なり、このため駆動の対称性
か損なわれ、従って素子の寿命か低下し、電力無効消費
分が多くなって不経済であった。However, the display element with this high dielectric constant insulation structure is
It is insulated with a high dielectric constant on the -H side (second electrode side), and because it is provided directly on the second electrode or the light-emitting layer, the light-emitting layer changes depending on the polarity of the electrode during AC drive. The electron energy injected into the device is different, which impairs the symmetry of the drive, thus shortening the life of the device and increasing the amount of ineffective power consumption, making it uneconomical.
この原因としては次のようなことが考えられる。即ち９
表示素子か発光するためには発光中心であるＭｎ’Ｊを
励起するために高エネルギー電子が必要となるか、この
ように電子を高エネルギー化するためには絶縁層及び発
光層内に高電界か生じており、この高電界中で電子が数
ｌＯ〜ｆｉ１００Ａの距離に亘っていることが必要であ
る。しかし、既にのべたように、高誘電率絶縁構造の表
示素子は上部絶縁層がないために第２の電極（透明電極
）に（−）極性のパルスがかけられた場合にはこの第２
の電極から電子が加速されないまま発光層に注入される
ため電子の加速は発光層内部の下部に近い部分でしか行
なわれないためにこの時両電極間に流れる電流は発光に
ほとんど寄与しない無効電流となる。これと逆に第１の
電極（下？１１電極）に（−）極性のパルスかかけられ
た場合には第１の電極と発光層との間に絶縁層が介在す
るために両者の間に高電界が発生し、絶縁層内、絶縁層
−発光層界面のトラップ準位にある電子が容易に加速さ
れるので発光中心を有効に励起することができる。この
ために発光輝度及び電流は第３図に示すように電極の極
性によって非対称となる＝一方、このように非対称駆動
が生じると９表示素子の寿命か低下する理由は次のよう
に考えられる。 Ｉ！ｌち、第２の電極（透明電極）か
（−）の時には発光層内に注入される電子は低エネルギ
ーであり、逆に第１の電極（下部電極）が（−）の時に
は電子は高エネルギーであるのでこのような電子か結晶
内を走る時に生ずる電子に比べて発光層であるＺｎＳ等
の結晶格子、結晶粒界２発光中心との衝突による格子の
電離。Possible reasons for this are as follows. That is 9
In order for a display element to emit light, high-energy electrons are required to excite Mn'J, which is the luminescent center, or to increase the energy of electrons, a high electric field is required in the insulating layer and the light-emitting layer. It is necessary for electrons to spread over a distance of several 10A to 100A in this high electric field. However, as mentioned above, since a display element with a high dielectric constant insulation structure does not have an upper insulating layer, when a (-) polarity pulse is applied to the second electrode (transparent electrode), this second
Since electrons are injected from the electrode into the light emitting layer without being accelerated, the acceleration of electrons occurs only near the bottom of the light emitting layer, so the current flowing between the two electrodes at this time is a reactive current that hardly contributes to light emission. becomes. On the other hand, when a (-) polarity pulse is applied to the first electrode (lower?11 electrode), an insulating layer is interposed between the first electrode and the light emitting layer, so that A high electric field is generated, and electrons in the trap level within the insulating layer and at the interface between the insulating layer and the light-emitting layer are easily accelerated, so that the light-emitting center can be effectively excited. For this reason, the luminance and current become asymmetric depending on the polarity of the electrodes as shown in FIG. 3. On the other hand, the reason why the life of the display element is reduced when such asymmetrical driving occurs is considered as follows. I! When the second electrode (transparent electrode) is (-), the electrons injected into the light-emitting layer have low energy; conversely, when the first electrode (lower electrode) is (-), the electrons are high-energy. Since these electrons are energy, compared to the electrons generated when they run inside the crystal, the ionization of the lattice due to collision with the crystal lattice of ZnS, etc., which is the luminescent layer, and the crystal grain boundary 2 luminescent center.
発光中心のドリフト度合が異なることによる第２の電極
側への偏析、結晶性、化学ψ１性の膜内不均一が観測さ
れる。特に発光中心の第１の電極（下部電極）側への偏
析か輝度の低下に著しい影響を及ぼし、２０００Ｈｒ、
５００Ｈｚで駆動すると、輝度の低下は４０〜５０％に
も及ぶ。Segregation toward the second electrode, crystallinity, and chemical ψ1 nonuniformity within the film are observed due to different degrees of drift of the emission center. In particular, the segregation toward the first electrode (lower electrode) side of the emission center has a significant effect on the decrease in brightness, and after 2000 hours,
When driven at 500 Hz, the brightness decreases by as much as 40-50%.
このような非対称駆動をなくすために−Ｉ：、部偏にセ
ラミック焼結層を設けることが考えられるが、これはセ
ラミック材料に強誘電性をもたせるためにはグリーンシ
ート成形、焼結時に９００〜１５００℃の高温下で処理
して結晶粒を充分に大きくするのでＩＪ膜発光層の一ヒ
でこれを行なうと、２０％以上の成形収縮によって破壊
が起きるために発光層が完全に損傷される。In order to eliminate such asymmetrical drive, it is possible to provide a ceramic sintered layer partially, but in order to give the ceramic material ferroelectricity, it is necessary to Since the crystal grains are sufficiently enlarged by processing at a high temperature of 1500°C, if this is done on one IJ film light-emitting layer, the light-emitting layer will be completely damaged as molding shrinkage of 20% or more will cause destruction. .
（発明の目的）
本発明の目的は、有効に対称駆動することかでき、従っ
て低電圧で低消費電力で経済的に駆動することかでき、
且つ寿命を向上することかできる高誘電率絶縁構造のエ
レクトロルミネセンス発光素子を提供することにある。(Object of the Invention) The object of the present invention is to be able to effectively drive symmetrically, and therefore to be driven economically with low voltage and low power consumption.
Another object of the present invention is to provide an electroluminescent light emitting device having a high dielectric constant insulation structure that can improve the lifetime.
（発明の構成）
本発明に係るエレクトロルミネセンス表示素子は、絶縁
基板とこの絶縁基板上に設けられた第１の電極とこの第
１の電極の上に設けられた比誘電率か５０００以上の高
誘電率材料の絶縁体とこの絶縁体の」二に設けられた発
光層とこの発光層の上に設けられた第２の電極とから成
っているか１発光層と第２の電極との間にプラズマＣＶ
Ｄ法によって形成された１０００Å以下の絶縁膜を有す
ることを特徴としている。(Structure of the Invention) The electroluminescent display element according to the present invention includes an insulating substrate, a first electrode provided on the insulating substrate, and a dielectric constant of 5000 or more provided on the first electrode. It consists of an insulator made of a high dielectric constant material, a light emitting layer provided on the second side of this insulator, and a second electrode provided on the light emitting layer. Plasma CV
It is characterized by having an insulating film of 1000 Å or less formed by the D method.
このようにすると、第２の電極側であるに側の絶縁膜を
第１の電極側である下側の絶縁体の電気容量と同じ電気
容量をもつように調整することによって表示素子を交流
対称駆動することかでき、従って輝度か向上する上に寿
命を延長することができる。In this way, by adjusting the insulating film on the side that is the second electrode side to have the same capacitance as the capacitance of the lower insulator that is the first electrode side, the display element can be made symmetrical with AC. Therefore, the brightness can be improved and the lifespan can be extended.
（実施例）
本発明の実施例を図面を参照して詳細に説明すると、第
１図は本発明に係るエレクトロルミネセンス表示素子Ｉ
Ｏを示し、このエレクトロルミネセンス表示素子ｌＯは
、純度か９９％のＡｌ２Ｏユのセラミック絶縁ノル板１
２と、この絶縁基板１２ 、、ｈにスクリーン印刷法に
よって形成された白金型の第１の電極（下側電極）１４
と、この第１の電極１４の上に形成されたＢａＴ ｉＯ
３を主成分とし比誘電率が５０００以りの絶縁体１６と
、この絶縁体１６の上に形成された発光層１８と、この
発光層１８のヒにプラズマＣＶＤ法等によって形成され
た１０００Å以下の絶縁膜２０と、この絶縁膜２０の上
に形成されたＩ ｎ ２０３ ・Ｓ ｎ ０２ （Ｉ
Ｔｏ）を主成分とする第２の電極（透明電極）２２と
から成っている。(Example) An example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows an electroluminescent display element I according to the present invention.
This electroluminescent display element 10 is made of a ceramic insulating plate 1 of Al2O2 with a purity of 99%.
2, and a platinum molded first electrode (lower electrode) 14 formed on the insulating substrate 12, h by screen printing method.
and BaTiO formed on this first electrode 14.
An insulator 16 whose main component is 3, and has a dielectric constant of 5000 or more, a light-emitting layer 18 formed on this insulator 16, and an insulator 16 having a dielectric constant of 1000 Å or less formed on the surface of this light-emitting layer 18 by plasma CVD or the like. and an insulating film 20 of I n 203 ・S n 02 (I
and a second electrode (transparent electrode) 22 whose main component is To.
次に２本発明のエレクトロルミネセンス表示素子の具体
例をのべる。先ず、セラミック絶縁基板１２をグリーン
シートのままとしてその一１―に白金の第１の電極１４
をスクリーン印刷法によって形成し、また絶縁体１６は
Ｂ ａ Ｔ ｉ Ｏｚを主成分とするグリーンシートを
積層し１３００℃のアルゴン雰囲気中で焼成して約４０
ＪＬ厚に形成する。次いでこの絶縁体１６はフロン洗浄
液で洗浄して有機物等の汚染物質を除去し。Next, two specific examples of the electroluminescent display element of the present invention will be described. First, a first electrode 14 of platinum is placed on the ceramic insulating substrate 12 as a green sheet.
was formed by a screen printing method, and the insulator 16 was formed by laminating green sheets containing B a T i Oz as a main component and baking them in an argon atmosphere at 1300°C.
Form to JL thickness. Next, this insulator 16 is cleaned with a Freon cleaning solution to remove contaminants such as organic substances.
真空中で乾燥した。尚、この絶縁体１６の比誘電率を測
定したところ約１４０００てあった。Dry in vacuo. The dielectric constant of this insulator 16 was measured and was found to be approximately 14,000.
発光層１８は、ＺｎＳにＭ ｎ ′ｊｔ０ 、５ ｉ’
（（に％ドープしたベレットを電子ビーム落着法によっ
て６０００Ａの厚さに蒸着して形成された。The light emitting layer 18 is made of ZnS with M n ′jt0 , 5 i′
(()% doped pellet was deposited to a thickness of 6000 Å by electron beam deposition.
絶縁膜２０は比誘電率か２５のＴａ２０５に五塩化タン
タルを原料とし基板温度３００℃。The insulating film 20 is made of tantalum pentachloride and Ta205 with a dielectric constant of 25, and the substrate temperature is 300°C.
Ｎ、Ｏ及び水素を反応ガスとしてプラズマＣＶＤ法によ
って堆積して形成された。プラズマＣＶＤ法は原料ガス
をプラズマ中で分解反応させて基板上に堆積させる方式
であるのでスパッタリンク法のようにプラズマをターゲ
ットに当てて蒸着させる方法のようにプラズマによって
原料が損傷することかない上にクラスターを発生するこ
とかない。このため、絶縁膜２０をプラズマＣＶＤ法に
よって形成すると、電子ビーム！Ｎ着法によって形成す
る場合のようにクラスターの付着及びその離脱によって
生ずる傾向かあるピンホールか生ずることかなく、また
スパッタ法によって形成する場合のようにクラスターの
付着及びその離脱、ターゲットをＡｒ等のスパッタガス
によって叩き出す際に膜として形成される傾向かあるプ
ラズマによって損傷した酸化物及び不安定化合物か生ず
ることかなく、従って構造欠陥が生じ難い。このため、
プラズマＣＶＤ法によって形成された絶縁！２２０は絶
縁耐圧か高く、厚みは１０００Å以下に抑えることかて
きる。この絶縁膜２０の厚みは絶縁体１６の電気容ｆｉ
ｃ、６＝εｏ−ｅ ｔ、＋−３／ ｄ ＋、＋ （ここ
でｄｌ、１は絶縁体１６の厚み４０７Ｌｍ、ｅ＋、＋は
絶縁体１６の比誘電率的９０００）と同じ電気容量Ｃ２
０＝ε。・２５・Ｓ／ｄとなるよう７１Ｏ＾に設定した
。It was formed by depositing by plasma CVD using N, O, and hydrogen as reactive gases. The plasma CVD method is a method in which the raw material gas is decomposed and reacted in plasma and deposited on the substrate, so the raw material is not damaged by the plasma, unlike the sputter link method, which evaporates by applying plasma to a target. It is unlikely that a cluster will occur. For this reason, when the insulating film 20 is formed by plasma CVD method, electron beam! Pinholes, which tend to occur due to the adhesion and separation of clusters as in the case of formation by the N-deposition method, do not occur, and pinholes do not occur due to the adhesion and separation of clusters as in the case of formation by the sputtering method. Plasma-damaged oxides and unstable compounds, which tend to form as films when ejected by sputtering gases, are not generated, and therefore structural defects are less likely to occur. For this reason,
Insulation formed by plasma CVD method! 220 has a high dielectric strength voltage, and the thickness can be kept to 1000 Å or less. The thickness of this insulating film 20 is equal to the electric capacity fi of the insulator 16.
c, 6 = εo-e t, +-3/ d +, + (here, dl, 1 is the thickness of the insulator 16, 407Lm, and e+, + is the relative dielectric constant of the insulator 16, 9000), which is the same electric capacity C2
0=ε.・It was set to 71O^ so that it would be 25・S/d.
最後に、第２の電極（透明電極）２２はこの絶縁Ｗ２２
０の上にＩＴＯを２０００Ａの厚みに堆積して形成した
。Finally, the second electrode (transparent electrode) 22 is connected to this insulation W22.
0 to a thickness of 2000 Å.
第２図は本発明のエレクトロルミネセンス表示素子の駆
動特性を示し、この図から解るように第２の電極に極性
の異なるパルスを印加すると、第３１ｍに示す従来の表
示素子に比べて対称性か非常によく、そのピーク差は僅
かに２％以内てあった。また、この素子の発光輝度を測
定したところ２０００Ｈｒ、５００Ｈｚて駆動した際に
従来の素子の発光輝度４０〜５０％（８００ｃｄ／ｍ”
）に比べて８０〜９０％（１１００ｃｄ／ｍ２）と向」
二して安定性が増した。Figure 2 shows the driving characteristics of the electroluminescent display element of the present invention, and as can be seen from this figure, when pulses with different polarities are applied to the second electrode, the symmetrical display element becomes more symmetrical than the conventional display element shown in Figure 31m. The peak difference was within 2%. Furthermore, when we measured the luminance of this device, when it was driven at 2000 hours and 500 Hz, it was 40-50% of the luminance of the conventional device (800 cd/m").
) compared to 80-90% (1100cd/m2)
Second, stability has increased.
尚、絶縁膜２０の厚みは極めて小さいので高調電車絶縁
構造の表示素子の低゛；Ｅ圧駆動の特長はそのまま維持
されている。Incidentally, since the thickness of the insulating film 20 is extremely small, the characteristic of low voltage drive of the display element having the high-tuning electric current insulation structure is maintained as it is.
（発明の効果）
本発明によれば、上記のように、高誘電率構造の表示素
子の低電圧駆動の特長を維持しつつその対称駆動性を確
保することができるので寿命か延びる上に輝度か向上す
る実益がある。(Effects of the Invention) According to the present invention, as described above, it is possible to maintain the low voltage drive feature of a display element with a high dielectric constant structure and ensure its symmetrical drive performance, thereby extending the life span and increasing the brightness. There is a real benefit to improving this.
第１図は未発ＩＩに係るエレクトロルミネセンス表示素
子の拡大断面図、第２図は本発明の表示素子の駆動特性
を示す線区、第３図は従来技術の表示素子の駆動特性を
示す線区である。
１０−−−−一エレクトロルミネセンス表示素子、１２
−−−−−セラミック絶縁基板、１４−一一一一第１の
電極、１６−−−−−絶縁体、１８−−−−一発光層、
２０−−−−−プラズマＣＶＤ法によって形成された絶
縁膜、２２−一一一一第２の電極。FIG. 1 is an enlarged cross-sectional view of the electroluminescent display element according to Unreleased II, FIG. 2 is a line showing the driving characteristics of the display element of the present invention, and FIG. 3 is the driving characteristic of the display element of the prior art. It is a line section. 10-----1 electroluminescent display element, 12
---- Ceramic insulating substrate, 14-111 first electrode, 16---- insulator, 18----1 light emitting layer,
20-----Insulating film formed by plasma CVD method, 22-1111 second electrode.
Claims (2)
極と前記第１の電極の上に設けられた比誘電率が５００
０以上の高誘電率材料の絶縁体と前記絶縁体の上に設け
られた発光層と前記発光層の上に設けられた第２の電極
とから成るエレクトロルミネセンス表示素子において，
前記発光層と前記第２の電極との間にプラズマＣＶＤ法
によつて形成された１０００Å以下の絶縁膜を有するこ
とを特徴とするエレクトロルミネセンス表示素子。(1) An insulating substrate, a first electrode provided on the insulating substrate, and a dielectric constant of 500 provided on the first electrode.
An electroluminescent display element comprising an insulator made of a high dielectric constant material of 0 or more, a light emitting layer provided on the insulator, and a second electrode provided on the light emitting layer,
An electroluminescent display element comprising an insulating film of 1000 Å or less formed by plasma CVD between the light emitting layer and the second electrode.
量を有するように調整された膜厚を有する特許請求の範
囲第１項に記載のエレクトロルミネセンス表示素子。(2) The electroluminescent display element according to claim 1, wherein the insulating film has a film thickness adjusted to have the same capacitance as the capacitance of the insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62001689A JPS63170896A (en) | 1987-01-09 | 1987-01-09 | Electroluminescence display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62001689A JPS63170896A (en) | 1987-01-09 | 1987-01-09 | Electroluminescence display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63170896A true JPS63170896A (en) | 1988-07-14 |
Family
ID=11508485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62001689A Pending JPS63170896A (en) | 1987-01-09 | 1987-01-09 | Electroluminescence display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63170896A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270371A (en) * | 2001-03-14 | 2002-09-20 | Denso Corp | El element and display panel using it |
-
1987
- 1987-01-09 JP JP62001689A patent/JPS63170896A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270371A (en) * | 2001-03-14 | 2002-09-20 | Denso Corp | El element and display panel using it |
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