JPS63146396A - Manufacture of ac electroluminescence display device - Google Patents
Manufacture of ac electroluminescence display deviceInfo
- Publication number
- JPS63146396A JPS63146396A JP61291476A JP29147686A JPS63146396A JP S63146396 A JPS63146396 A JP S63146396A JP 61291476 A JP61291476 A JP 61291476A JP 29147686 A JP29147686 A JP 29147686A JP S63146396 A JPS63146396 A JP S63146396A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- light
- emitting layer
- electroluminescent display
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005401 electroluminescence Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- XCKPLVGWGCWOMD-YYEYMFTQSA-N 3-[[(2r,3r,4s,5r,6r)-6-[(2s,3s,4r,5r)-3,4-bis(2-cyanoethoxy)-2,5-bis(2-cyanoethoxymethyl)oxolan-2-yl]oxy-3,4,5-tris(2-cyanoethoxy)oxan-2-yl]methoxy]propanenitrile Chemical compound N#CCCO[C@H]1[C@H](OCCC#N)[C@@H](COCCC#N)O[C@@]1(COCCC#N)O[C@@H]1[C@H](OCCC#N)[C@@H](OCCC#N)[C@H](OCCC#N)[C@@H](COCCC#N)O1 XCKPLVGWGCWOMD-YYEYMFTQSA-N 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、コンピュータ、端末機器等の如き種々の分野
に用いられる薄膜のエレクトロルミセンセンス表示素子
の製造方法の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a method for manufacturing thin film electroluminescent display elements used in various fields such as computers and terminal equipment.
（従来技術）
この種のエレクトロルミネセンス表示素子は、絶縁基板
とこの絶縁基板上に１組の電極を挟んで絶縁して配こさ
れたエレクトロルミネセンス特性を有する発光層とから
成っている。１つの従来技術の方法では絶縁基板として
９９％と純度の高い焼結アルミナ基板の如きセラミック
板を用い、この絶縁基板の上にＡｇ−Ｐｄの如き不透明
材料の導電ペーストをスクリーン印刷によって塗着して
例えば巾か２００ｇ、ｍて厚みか２〜３ＪＬｍの下部電
極を形成し、その上にチタン酸鉛（ＰｂＴｉＯコ）、チ
タン酸バリウムの強誘電体を主成分とする厚みが２０〜
５０鉢ｍのグリーンシートを積層し、８００〜１２００
℃の温度で、焼成して下部絶縁層を形成し、この上に例
えば硫化亜鉛にマンガンを０．５〜１ｇ！、量％程度混
合した蛍光体を電子ビーム蒸着法またはスパッタリング
法によって５０００Ａ〜６０００Ａの厚みの発光層を形
成し、最後にＩＴＯ（Ｉ ｎ２０３ ・５ｎ０２ ）の
透明材料をスパッタリング法によって２００ＯＡの厚み
の上部電極を形成してエレクトロルミネセンス表示素子
を製造している。また、他の従来技術では絶縁基板とし
てガラス基板を用い、その上に透明電極、下部絶縁層２
発光層、上部絶縁層、アルミニウム電極を数千Ａ程度ず
つ電子ビーム蒸着法、スパッタリング法等の真空蒸着法
によって形成してエレクトロルミネセンス表示素子を製
造している。(Prior Art) This type of electroluminescent display element consists of an insulating substrate and a light-emitting layer having electroluminescent properties, which is insulated and disposed on the insulating substrate with a pair of electrodes in between. One prior art method uses a ceramic plate such as a 99% pure sintered alumina substrate as an insulating substrate, and then applies a conductive paste of an opaque material such as Ag-Pd onto the insulating substrate by screen printing. For example, a lower electrode with a width of 200 g and a thickness of 2 to 3 JLm is formed, and on top of that a lower electrode with a thickness of 20 to 200 g, which is mainly composed of ferroelectric materials such as lead titanate (PbTiO) and barium titanate, is formed.
Stacking 50 pots of green sheets, 800 to 1200
℃ temperature to form a lower insulating layer, and on top of this, for example, 0.5 to 1 g of manganese to zinc sulfide! , a luminescent layer with a thickness of 5000A to 6000A is formed by electron beam evaporation or sputtering, and finally a transparent material of ITO (In203 ・5n02) is formed on the upper part with a thickness of 200A by sputtering. Electroluminescent display elements are manufactured by forming electrodes. In addition, in other conventional techniques, a glass substrate is used as an insulating substrate, and a transparent electrode and a lower insulating layer 2 are provided on the glass substrate.
An electroluminescent display element is manufactured by forming a light emitting layer, an upper insulating layer, and an aluminum electrode each at a thickness of about several thousand amps by a vacuum evaporation method such as an electron beam evaporation method or a sputtering method.
一般に９強誘電材料を焼成する際に８００℃〜１２００
℃の高温で処理しないと１強誘電効果がでないが、後者
の製造法で用いられる絶縁基板は最高軟化点が６００℃
〜７００℃であるガラス基板であるのでこのような高温
処理をすることかできないため絶縁層の誘電率を高くす
ることができない、一方、前者の製造方法で用いられる
絶縁基板は高温に曝すことができるのて絶縁層を高温処
理して誘電率が１００００以上とすることができるため
５０ｖ程度の低電圧で駆動することができる。Generally, when firing 9 ferroelectric materials, the temperature is 800℃~1200℃.
The ferroelectric effect does not occur unless the process is carried out at a high temperature of 600°C, but the insulating substrate used in the latter manufacturing method has a maximum softening point of 600°C.
Since it is a glass substrate with a temperature of ~700°C, it cannot be subjected to such high-temperature treatment and the dielectric constant of the insulating layer cannot be increased.On the other hand, the insulating substrate used in the former manufacturing method cannot be exposed to high temperatures. Since the insulating layer can be treated at high temperature to have a dielectric constant of 10,000 or more, it can be driven at a low voltage of about 50V.
しかし、この前者の方法によって製造されたエレクトロ
ルミネセンス表示素子は発光層の上に絶縁層かないため
交流駆動時に極性によって発光輝度が異なる欠点があっ
た。即ち、ＩＴＯ電極から発光層へは電荷が容易に注入
されるが、強誘電体である絶縁層から発光層内への電荷
の注入は困難であるため極性によって発光層内へ注入さ
れる電荷量（１！流量）が異なる。一方、発光層内に注
入された電子は高電界によって加速されてホット・エレ
クトロンとなり、これが発光中心を直接的または間接的
に衝突励起させて発光が行なわれるので極性によって注
入電荷量が異なると、絶縁層に正の極性か印加されたと
きには高輝度で発光するが、絶縁層に反対の極性が印加
されると発光しない現象が生ずる、また、電極から直接
注入された電子は電流制限がないため絶縁層を通して注
入された電子よりもエネルギーが低く、マンガン等の発
光中心は多数回の交流動作の間に電極側に押しやられて
発光層内の発光中心が偏析し、輝度が低下する欠点があ
った。However, since the electroluminescent display element manufactured by the former method does not have an insulating layer on the light emitting layer, it has a drawback that the luminance of light varies depending on the polarity during AC drive. In other words, charge is easily injected from the ITO electrode to the light emitting layer, but it is difficult to inject charge from the ferroelectric insulating layer into the light emitting layer, so the amount of charge injected into the light emitting layer depends on the polarity. (1!Flow rate) is different. On the other hand, electrons injected into the light-emitting layer are accelerated by a high electric field and become hot electrons, which directly or indirectly collide and excite the light-emitting center to emit light. Therefore, if the amount of charge injected differs depending on the polarity, When a positive polarity is applied to the insulating layer, it emits light with high brightness, but when the opposite polarity is applied to the insulating layer, it does not emit light. In addition, there is no current limit for electrons directly injected from the electrode. It has lower energy than electrons injected through the insulating layer, and has the drawback that the luminescent centers of manganese, etc., are pushed toward the electrode during multiple alternating current operations, causing the luminescent centers in the luminescent layer to segregate and reduce brightness. Ta.
従って、このような非対称性を避けるために発光層上に
更に下部絶縁層と同質の上部絶縁層を設けるのが理想的
であるが０発光層を構成する硫化亜鉛の如き硫化物はセ
ラミックの焼結温度である８００℃〜１２００℃の高温
雰囲気に曝らすと硫黄が直ちに昇華し、硫化亜鉛の組成
比が崩れて良好な発光層が得られない上に焼成時の１０
〜２０％の成膜後の収縮により、て発光層の膜が破壊さ
れる欠点があった。Therefore, in order to avoid such asymmetry, it is ideal to further provide an upper insulating layer of the same quality as the lower insulating layer on the emissive layer, but sulfides such as zinc sulfide constituting the emissive layer are When exposed to a high temperature atmosphere of 800°C to 1200°C, which is the freezing temperature, sulfur immediately sublimates, the composition ratio of zinc sulfide collapses, and a good luminescent layer cannot be obtained.
There was a drawback that the film of the light-emitting layer was destroyed due to shrinkage of ~20% after film formation.
このため、従来技術ては上部絶縁層としてタンタル酸バ
リウム（ＢａＴａ２０１ｉ ）、ニオブ酸鉛（ＰｂＮｂ
２０６ ）の８ｉ！２か用いられているが、薄膜を６０
０℃以上の温度で形成すると、結晶粒径が数ｕＬｍと膜
厚の数ｌＯ倍程度にも成長し、このため結晶粒界の絶縁
耐圧が著しく低下する。従って、上部絶縁層は５００℃
以下の温度で膜形成しているが、この場合には誘電率が
５０以下となって下部絶縁層の誘電率と著しく異なって
極性によって発光輝度が変化する欠点があった。For this reason, the conventional technology uses barium tantalate (BaTa201i), lead niobate (PbNb) as the upper insulating layer.
206)'s 8i! 2 is used, but a thin film of 60
When formed at a temperature of 0° C. or higher, the crystal grain size grows to several μLm, several 1O times the film thickness, and as a result, the dielectric breakdown voltage at the grain boundaries decreases significantly. Therefore, the upper insulating layer is heated to 500°C.
Although the film is formed at the following temperature, in this case, the dielectric constant is 50 or less, which is significantly different from the dielectric constant of the lower insulating layer, and there is a drawback that the luminance changes depending on the polarity.
（発明の目的）
本発明の目的は、高温で処理する必要なく高い誘電率の
絶縁層を形成することができるエレクトロルミネセンス
表示素子を提供することにある。(Objective of the Invention) An object of the present invention is to provide an electroluminescent display element in which an insulating layer with a high dielectric constant can be formed without the need for high-temperature treatment.
（発明の構成）
本発明の方法によって製造されるエレクトロルミネセン
ス表示素子は、絶縁基板とこの絶縁基板の上に設けられ
た発光層とこの発光層と絶縁基板の間及びこの発光層の
上にそれぞれ絶縁層を介して設けられた上下の電極とか
ら成っており９発光層の上の絶縁層か１０００以上の高
い誘電率を有するようにするためこの発光層の上の絶縁
層は強誘電体を混合した液体を塗付し固化して形成する
ことを特徴としている。(Structure of the Invention) An electroluminescent display element manufactured by the method of the present invention includes an insulating substrate, a light-emitting layer provided on the insulating substrate, and a structure between the light-emitting layer and the insulating substrate and on the light-emitting layer. It consists of upper and lower electrodes each provided with an insulating layer in between.9 The insulating layer above the light emitting layer is made of a ferroelectric material so that the insulating layer above the light emitting layer has a high dielectric constant of 1000 or more. It is characterized by being formed by applying a liquid mixture of and solidifying it.
このようにすると、高温処理することなく１０００以上
の高い誘電率の絶縁層を得ることかてき、従って交流電
圧によって発光輝度が非対称となることがない信頼性の
高いエレクトロルミネセンス表示素子を得ることができ
る。In this way, it is possible to obtain an insulating layer with a high dielectric constant of 1000 or more without high-temperature treatment, and therefore to obtain a highly reliable electroluminescent display element whose luminance does not become asymmetrical due to alternating current voltage. I can do it.
（実施例）
本発明の実施例を図面を参照して詳細に説明すると１図
面は本発明に係る製造方法によって製造されたエレクト
ロルミネセンス表示素子ｌＯのを示す、先ず、９９％と
純度の高い焼結アルミナ（Ａ１２０３）基板の如きセラ
ミック板から成る厚みか１ｍｍの絶縁基板１２を用意し
、この絶縁基板１２の上にＡｇ−Ｐｄの如き不透明材料
の導電ペーストをスクリーン印刷によって塗着して例え
ば巾が２００ＪＬｍで厚みが２〜３ｕＬｍの下部電極１
４を形成し、その上にチタン酸鉛（ＰｂＴｉ０３）系の
誘電率が８０００の強誘電体を主成分とする厚みが３０
７ｚｍのグリーンシートを積層し、８００℃〜１２００
℃の温度で焼成して下部絶縁層１６を形成し。(Example) An example of the present invention will be described in detail with reference to the drawings. Figure 1 shows an electroluminescent display element lO manufactured by the manufacturing method according to the present invention. First, it has a purity of 99%. An insulating substrate 12 made of a ceramic plate such as a sintered alumina (A1203) substrate with a thickness of 1 mm is prepared, and a conductive paste made of an opaque material such as Ag-Pd is applied by screen printing onto the insulating substrate 12, for example. Lower electrode 1 with a width of 200JLm and a thickness of 2~3uLm
4, and on top of that, a ferroelectric material of lead titanate (PbTi03) type with a dielectric constant of 8000 is formed as a main component and has a thickness of 30 mm.
Laminated 7zm green sheets and heated to 800℃~1200℃
The lower insulating layer 16 is formed by firing at a temperature of .degree.
この上に例えば硫化亜鉛にマンガンを０．５重量％程度
混合した蛍光体を電子ビーム蒸着法によって０．８Ｂｍ
の厚みの発光層１８を形成した。この発光層１８は発光
輝度を安定化するために５００℃て１時間熱処理した。On top of this, for example, a phosphor made by mixing about 0.5% by weight of manganese with zinc sulfide is applied to a thickness of 0.8B by electron beam evaporation.
A light emitting layer 18 having a thickness of . This light-emitting layer 18 was heat-treated at 500° C. for 1 hour to stabilize the luminance.
次に、シアノエチルサクロース（Ｅａｓｔｍａｎ社製、
誘電率３０〜３５）に３〜５ルｍに焼結粉砕したＢａＴ
ｉＯ３系強誘電体粉末（誘電率１２０００）を７０００
となる割合に混合し、更にバインダとして１０〜２０重
量％のエポキシ樹脂粉末を網目形成材としての誘電体ペ
ーストと共に混合し、これをスクリーン印刷法によって
約２０ｇｍの厚みで上部絶縁層２０を形成し、この上部
絶縁層２０を窒素雰囲気中で４０℃３０分、また１２５
°Ｃで１時間熱処理し硬化させた。この上部絶縁層２０
の誘電率はＳ、ＯＯＯ〜ｓ、ｓｏｏであった。Next, cyanoethyl sucrose (manufactured by Eastman,
BaT sintered and crushed to a dielectric constant of 30 to 35) and 3 to 5 μm
iO3 based ferroelectric powder (permittivity 12000) 7000
Then, 10 to 20% by weight of epoxy resin powder as a binder was mixed with a dielectric paste as a network forming material, and the upper insulating layer 20 was formed with a thickness of about 20 gm by screen printing. , this upper insulating layer 20 was heated at 40° C. for 30 minutes in a nitrogen atmosphere, and at 125° C.
It was cured by heat treatment at °C for 1 hour. This upper insulating layer 20
The dielectric constant of was S, OOO~s, soo.
最後にＩＴＯ（Ｉ ｎ２０３ ・５ｎ０２ ）の透明材
料をアルゴン雰囲気中でプラズマ処理し。Finally, the transparent material of ITO (I n203 .5n02 ) was subjected to plasma treatment in an argon atmosphere.
２０００Ａの厚みの透明な上部電極２２を形成してエレ
クトロルミネセンス表示素子を完成した。A transparent upper electrode 22 with a thickness of 2000 Å was formed to complete an electroluminescent display element.
このようにして製造されたエレクトロルミネセンス表示
素子にパルス電圧を印加し、このときの電流及び発光輝
度を測定したところ第２図（Ａ）に示すようにほぼ対称
的であることが解っ、た、尚、この素子を８５℃の温度
で２，０００時間加速劣化試験を試みたところ発光輝度
の低下は５％以内であることが確認された。When a pulse voltage was applied to the electroluminescent display element manufactured in this way and the current and luminance at this time were measured, it was found that they were almost symmetrical as shown in Figure 2 (A). When this device was subjected to an accelerated deterioration test for 2,000 hours at a temperature of 85° C., it was confirmed that the reduction in luminance was within 5%.
また、比較例として他の条件は上記実施例と同じとし、
ＩＴＯ透明電極を発光層の上に直接蒸着した素子にパル
ス電圧を印加したところ第２図（Ｂ）に示すように電流
及び発光輝度は非対称であった。また、この素子に同様
の加速劣化試験を試みたところ発光輝度の低下は４０〜
５０％であった。In addition, as a comparative example, other conditions were the same as in the above example,
When a pulse voltage was applied to a device in which an ITO transparent electrode was directly deposited on a light emitting layer, the current and luminance were asymmetrical as shown in FIG. 2(B). In addition, when a similar accelerated deterioration test was attempted on this element, the luminance decreased by 40~
It was 50%.
（発明の効果）
本発明によれば、上記のように、高温で熱処理する必要
がなく高誘電率が１０００以上の絶縁層を形成すること
ができるので交流駆動で電流及び発光輝度は極性に対し
てほぼ対称とすることができ、また過酷な使用条件でも
発光輝度が低下することがなく信頼性の高いエレクトロ
ルミネセンス表示素子を得ることがてきる実益がある。(Effects of the Invention) According to the present invention, as described above, it is possible to form an insulating layer with a high dielectric constant of 1000 or more without the need for heat treatment at high temperatures. There is a practical benefit in that it is possible to obtain a highly reliable electroluminescent display element, which can be made almost symmetrical, and whose emission brightness does not decrease even under severe usage conditions.
第１図は本発明の方法によって製造されたエレクトロル
ミネセンス表示素子の拡大断面図。
第２図（Ａ）ＣＢ）はそれぞれ本発明と従来とのエレク
トロルミネセンス表示素子の電流及び発光輝度との特性
図である。
１０−−−−一エレクトロルミネセンス表示素子、１２
−−−−一絶縁基板、１４−−−−−下部電極、１６−
−−−−下部絶縁層、１８−−−−−上部電極、２０−
−−−一上部絶縁層、２２−−−−一上部電極。FIG. 1 is an enlarged cross-sectional view of an electroluminescent display element manufactured by the method of the present invention. FIGS. 2(A) and 2(CB) are characteristic diagrams of current and luminance of electroluminescent display elements of the present invention and a conventional electroluminescent display element, respectively. 10-----1 electroluminescent display element, 12
-------Insulating substrate, 14-----Lower electrode, 16-
---- Lower insulating layer, 18 ---- Upper electrode, 20 -
--- One upper insulating layer, 22 --- One upper electrode.
Claims (1)
記発光層と絶縁基板の間及び前記発光層の上にそれぞれ
絶縁層を介して設けられた上下の電極とから成り前記発
光層の上の絶縁層が１０００以上の高い誘電率を有する
交流エレクトロルミネセンス表示素子を製造する方法に
おいて，前記発光層の上の絶縁層は強誘電体を混合した
液体を塗付し固化して形成することを特徴とする交流エ
レクトロルミネセンス表示素子の製造方法。It consists of an insulating substrate, a light-emitting layer provided on the insulating substrate, and upper and lower electrodes provided between the light-emitting layer and the insulating substrate and on the light-emitting layer, respectively, with an insulating layer interposed between the light-emitting layer and the light-emitting layer. In the method for manufacturing an AC electroluminescent display element in which the insulating layer has a high dielectric constant of 1000 or more, the insulating layer on the light emitting layer is formed by applying and solidifying a liquid mixed with a ferroelectric material. A method for manufacturing an AC electroluminescent display element characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61291476A JPS63146396A (en) | 1986-12-09 | 1986-12-09 | Manufacture of ac electroluminescence display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61291476A JPS63146396A (en) | 1986-12-09 | 1986-12-09 | Manufacture of ac electroluminescence display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63146396A true JPS63146396A (en) | 1988-06-18 |
Family
ID=17769367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61291476A Pending JPS63146396A (en) | 1986-12-09 | 1986-12-09 | Manufacture of ac electroluminescence display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63146396A (en) |
-
1986
- 1986-12-09 JP JP61291476A patent/JPS63146396A/en active Pending
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