JPS62163288A - Manufacture of thin film el panel - Google Patents
Manufacture of thin film el panelInfo
- Publication number
- JPS62163288A JPS62163288A JP61005611A JP561186A JPS62163288A JP S62163288 A JPS62163288 A JP S62163288A JP 61005611 A JP61005611 A JP 61005611A JP 561186 A JP561186 A JP 561186A JP S62163288 A JPS62163288 A JP S62163288A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- ta2o5
- insulating layer
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010409 thin film Substances 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 10
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 15
- 239000011521 glass Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- 239000002585 base Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000023597 hemostasis Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
主業上夏■里光■
この発明は薄膜ＥＬパネルの製造方法に関し、特に薄Ｉ
！ＷＥＬパネルの絶縁基板上に形成されるＥＬ素子にお
ける、Ｔａ２Ｏ５スパッタ膜による絶縁層の形成方法に
関する。[Detailed Description of the Invention] Main business: Kaminatsu ■ Riko ■ This invention relates to a method for manufacturing thin film EL panels, and in particular to a method for manufacturing thin film EL panels.
! The present invention relates to a method for forming an insulating layer using a Ta2O5 sputtered film in an EL element formed on an insulating substrate of a WEL panel.
従来勿吸血
文字、図形等の情報を表示する薄膜ＥＬマトリクス型デ
ィスプレイパネルは２重絶縁層型が一般的で、その構造
例を第４図と第５図を参照して説明する。尚、第４図の
左半分はＸ方向の断面図、右半分はＸ方向と直交するＹ
方向の断面図である。Conventionally, a thin film EL matrix type display panel for displaying information such as blood-sucking characters and graphics has generally been of a double insulating layer type, and an example of its structure will be explained with reference to FIGS. 4 and 5. The left half of Fig. 4 is a cross-sectional view in the X direction, and the right half is a cross-sectional view in the Y direction perpendicular to the X direction.
It is a sectional view of the direction.
第４図において、（１）は透明なガラス基板、（２）は
ガラス基板（１）上に形成されたマトリクス型ＥＬ素子
、（３）はガラス基板（１）と協働してＥＬ素子（２）
を気密封止するカバーガラスである。ＥＬ素子（２）に
おいて、（４）はガラス基板（１）上に１．Ｔ、Ｏ等を
蒸着法等でＸ方向に定ピツチで多数のストライプ状に形
成した透明電極、（５）は透明電極（４）とガラス基板
（１）上にＡ１２Ｏ３、Ｙ！０３などを蒸着又はスパッ
タして形成した透明な第１の絶縁層、（６）は第１の絶
縁層（５）上にＺｎＳ：Ｍｎなどを蒸着して形成した発
光層、（７）は発光層（６）上にへＡ２Ｏ３、Ｙ２Ｏ３
などを蒸着又はスパッタして形成した第２の絶縁層（８
）は第２の絶縁層（７）上にＹ方向に定ピツチで多数の
ストライプ状に形成したＡｅ茅着膜による背面電極であ
る。透明電極（４）と背面電極（８）の各一端部は、一
本おきにガラス基板（１）の反対方向の周縁部上まで延
設され、この両電極（４）（８）の延設端部間に電圧を
印加して、両電極（４）（８）の交叉部分（画素）にあ
る発光層（６）を選択的に発光させて、所望の情報表示
が行われる。In Fig. 4, (1) is a transparent glass substrate, (2) is a matrix type EL element formed on the glass substrate (1), and (3) is an EL element ( 2)
It is a cover glass that hermetically seals the In the EL element (2), 1. (4) is placed on the glass substrate (1). A transparent electrode (5) is made of T, O, etc. formed in a large number of stripes at a constant pitch in the X direction by vapor deposition, etc., and A12O3, Y! (6) is a transparent first insulating layer formed by vapor depositing or sputtering ZnS:Mn etc. on the first insulating layer (5), (7) is a light emitting layer formed by vapor depositing ZnS:Mn etc. on the first insulating layer (5). A2O3, Y2O3 onto layer (6)
A second insulating layer (8
) is a back electrode made of an Ae-coated film formed in a number of stripes at regular pitches in the Y direction on the second insulating layer (7). One end of each of the transparent electrodes (4) and the back electrode (8) is extended to the opposite peripheral edge of the glass substrate (1) every other time, and the extension of both electrodes (4) and (8) is By applying a voltage between the ends, the light-emitting layer (6) located at the intersection (pixel) of both electrodes (4) and (8) is caused to selectively emit light, thereby displaying desired information.
上記ＥＬ素子（２）における第１、第２の絶縁層（５）
（７）の各々は絶縁耐圧の改善などの理由で種々の材料
及び製法が検討されているが、Ｔａ２Ｏ５の高周波スパ
ッタ膜は、比誘電率が大きく、耐アルカリ性と耐薬品性
に優れ、かつ、スパッタ法による成膜のために緻密な膜
となっているため、耐水性にも優れていることが知られ
ている（特公昭５７−４５０３７号公報、特開昭５７−
１７２６９２号公報、特開昭５８−７１５９０号公報）
。First and second insulating layers (5) in the EL element (2)
Various materials and manufacturing methods have been studied for each of (7) for reasons such as improving dielectric strength, but the Ta2O5 high-frequency sputtered film has a high dielectric constant, excellent alkali resistance and chemical resistance, and It is known that it has excellent water resistance because it is a dense film formed by sputtering method (Japanese Patent Publication No. 57-45037, Japanese Unexamined Patent Publication No. 57-1989).
172692, JP 58-71590)
.
又、第１、第２の絶縁層（５）（７）を上記Ｔａ２Ｏ５
のスパッタ膜とｙ、、０３等の他の材料層と積層して構
成する、複合構造（特開昭５８−２１６３９１号公報）
や、第５図に示すように、第１の絶縁層（５）は１４１
２Ｏ３蒸着膜（５ａ）上にＴａ２Ｏ５スパッタ膜（５ｂ
）を積層した２層構造、第２の絶縁層（７）はＹ２Ｏ３
蒸着膜（７ａ）上にＴａ２ ｏ、、スパッタ膜（７ｂ
）を積層した２層構造のものがある。In addition, the first and second insulating layers (5) and (7) are made of the above Ta2O5.
Composite structure constructed by laminating the sputtered film of and other material layers such as y, , 03 (Japanese Patent Application Laid-Open No. 58-216391)
Or, as shown in FIG. 5, the first insulating layer (5) is 141
A Ta2O5 sputtered film (5b) is deposited on the 2O3 vapor-deposited film (5a).
), the second insulating layer (7) is Y2O3
A sputtered film (7b) of Ta2O is deposited on the vapor deposited film (7a).
) has a two-layer structure.
このようなＴａ２ ｏ、、スパッタ膜（５ｂ） （７
ｂ）の形成は、第６図に示すようなスパッタ室（９）内
で次のように行われている。スパッタ室（９）の下部空
間に配置されたカソード電極＜１０）上にＴａ２Ｏ５焼
結体（１１）を支持し、カソード電極（ｌＯ）の上方に
対向配置された上部基板電極（１２）の下面で、ＡＡ２
Ｏ３蒸着膜（５ａ）又はＹ２Ｏ３蒸着膜（７ａ）の形成
済みガラス基板（１）を被スパツタ面を下にして支持す
る。この状態でスパッタ室（９）内をＡｒと０２の雰囲
気に保っておいて、上部基板電極（１２）をアースし、
カソード基板（１０）に高周波電源（１３）から高周波
電圧■１を印加して、Ｔａ２Ｏ５焼結体（１１）からＴ
ａ２Ｏ５粒子をガラス基板（１）に向は飛ばすと、ガラ
ス基板（１）にＴａ２Ｏ５スパッタ膜（５ｂ）又は（７
ｂ）が形成される。Such Ta2o,, sputtered film (5b) (7
The formation of b) is carried out in the sputtering chamber (9) as shown in FIG. 6 as follows. A Ta2O5 sintered body (11) is supported on a cathode electrode <10) placed in the lower space of the sputtering chamber (9), and the lower surface of an upper substrate electrode (12) placed oppositely above the cathode electrode (lO). So, AA2
A glass substrate (1) on which an O3 vapor-deposited film (5a) or a Y2O3 vapor-deposited film (7a) has been formed is supported with the surface to be sputtered facing down. In this state, the inside of the sputtering chamber (9) is maintained in an atmosphere of Ar and 02, and the upper substrate electrode (12) is grounded.
High frequency voltage ■1 is applied from the high frequency power supply (13) to the cathode substrate (10), and T
When a2O5 particles are blown toward the glass substrate (1), a Ta2O5 sputtered film (5b) or (7) is formed on the glass substrate (1).
b) is formed.
」ブ℃【ヲシＬ１−２シ５−ンしよ゛と るＰｌ 占
薄膜ＥＬパネルにおけるＥＬ素子の輝度（ｃｄ）や発光
効率（ｌ ｍ ／ ｗ ）を決める一要因に、ＥＬ素子
の絶縁層の膜質がある。そこで、ＥＬ素子の絶縁層はＥ
Ｌ素子の輝度や発光効率を上げるために、様々な材料、
構造のものが提案され、実用化されているが、材料、Ｊ
Ｒ造の改良では、輝度や発光効率の大幅な改善効果が期
待できないでいるのが現状である。One of the factors that determines the brightness (cd) and luminous efficiency (l m / w) of the EL element in a thin film EL panel is the insulating layer of the EL element. There is a film quality. Therefore, the insulating layer of the EL element is
In order to increase the brightness and luminous efficiency of L elements, various materials,
Structures have been proposed and put into practical use, but materials, J
At present, improvements to the R structure cannot be expected to significantly improve brightness or luminous efficiency.
本発明はＥＬ素子の輝度、発光効率の大幅な改善を目的
とし、これを同じ構造のＥＬ素子の絶縁層でも、その製
法を変えることにより達成したものである。The present invention aims to significantly improve the brightness and luminous efficiency of an EL element, and has achieved this by changing the manufacturing method of the insulating layer of an EL element having the same structure.
ｌ占 暫 るための 。For temporary divination.
本発明の上記目的を達成する手段は、基板電極に保持さ
れた絶縁基板に薄膜ＥＬ素子のＴ ａ ２Ｏ５スパツタ
膜による絶縁層を形成するに際し、Ｔａ２Ｏ５のスパッ
タ時に前記基板電極に高周波バイアスを印加することで
ある。Means for achieving the above object of the present invention is to apply a high frequency bias to the substrate electrode during sputtering of Ta2O5 when forming an insulating layer by a Ta2O5 sputtering film of a thin film EL element on an insulating substrate held by a substrate electrode. That's true.
昨月−
上記手段のように、Ｔａ２Ｏ５スパッタ時に絶縁基板を
支持する基板電極に高周波バイアスを印加することによ
り、絶縁基板に形成されるＴａ２ ｏ、、スパッタ膜は
緻密性、結合性、絶縁性が一段と優れ、これによりＥＬ
ｓ子の輝度、発光効率が格段に向上することが実証され
た。Last month - By applying a high frequency bias to the substrate electrode supporting the insulating substrate during Ta2O5 sputtering as in the above method, the Ta2O sputtered film formed on the insulating substrate has good density, bonding properties, and insulation properties. Even better, this makes EL
It was demonstrated that the brightness and luminous efficiency of the sinter were significantly improved.
実止血
例えば、第４図の薄膜ＥＬパネルにおいて、本発明は第
１、第２の絶縁層（５）（７）の７ａ２ ｏｓスパッタ
ＩＮ （５ｂ） （７ｂ）を、第１図に示すようなス
パッタ装置で、次のように形成する。この第１図のスパ
ッタ装置と、第６図のスパッタ装置との相違点は、スパ
ッタ室（１４）内の上部基板電極（１２）に高周波電源
（１５）から高周波バイアス電圧ｖ２を印加する手段を
付設したことのみで、他は第６図と同様であり、第６図
と同一のものには同一参照符号を付す。Actual hemostasis For example, in the thin film EL panel shown in FIG. 4, the present invention uses 7a2 os sputtering IN (5b) (7b) of the first and second insulating layers (5) (7) as shown in FIG. It is formed using a sputtering device as follows. The difference between the sputtering apparatus shown in FIG. 1 and the sputtering apparatus shown in FIG. 6 is that the sputtering apparatus shown in FIG. The other parts are the same as those in FIG. 6, and the same parts as in FIG. 6 are given the same reference numerals.
第１図のスパッタ室（１４）のカソード電極（１０）上
でＴａ２Ｏ５焼結体（１１）を支持し、上部基板電極（
１２）下でＡＡ２Ｏ３蒸着膜（５ａ）又はＹ２Ｏ３蒸着
膜（７ａ）形成済みガラス基板（１）を支持し、スパッ
タ室（１４）内をＡｒと０２の雰囲気に保つ。而して、
カソード電極（１０）に従来同様の高周波電圧ｖ１を加
圧し、同時に上部基板電極（１２）に上述高周波バイア
ス電圧Ｖ１と同程度の周波数で、パワーが１０〜３０％
の高周波バイアス電圧■２を印加して、Ｔａ２Ｏ５焼結
体からＴａ２Ｏ５粒子を飛ばし、ガラス基板（１）にＴ
ａ２Ｏ５スパッタ膜（５ｂ）又は（７ｂ）を形成する。The Ta2O5 sintered body (11) is supported on the cathode electrode (10) of the sputtering chamber (14) in Fig. 1, and the upper substrate electrode (
12) The glass substrate (1) on which the AA2O3 vapor deposited film (5a) or the Y2O3 vapor deposited film (7a) has been formed is supported below, and the inside of the sputtering chamber (14) is maintained in an atmosphere of Ar and 02. Then,
A high frequency voltage v1 similar to the conventional one is applied to the cathode electrode (10), and at the same time, a power of 10 to 30% is applied to the upper substrate electrode (12) at the same frequency as the above-mentioned high frequency bias voltage V1.
By applying a high frequency bias voltage 2 of
An a2O5 sputtered film (5b) or (7b) is formed.
この本発明方法で形成されたＴａ２Ｏ５スパッタ膜（５
ｉ：ｌ） （７ｂ）は、第６図の従来製法により形成
されたものよりも、緻密性、結合性が良くて、絶縁性が
一段と優れることが実験により認知された。この本発明
方法の優位性は、スパッタ時におけるＡ／２Ｏ３ 、Ｙ
２Ｏ３の下地膜の１１変化、スパッタ時におけるスパッ
タ室内のＡｒイオンによるＴａ２Ｏ５スパッタ膜成長補
助作用などが理自として考えられるが、詳細は不明であ
る。Ta2O5 sputtered film (5
It has been experimentally recognized that i:l) (7b) has better density, better bonding properties, and even better insulation properties than those formed by the conventional manufacturing method shown in FIG. The advantage of the method of the present invention is that A/2O3, Y
11 changes in the base film of 2O3, and the action of Ar ions in the sputtering chamber during sputtering to assist in the growth of the Ta2O5 sputtered film, etc., but the details are unknown.
ＥＬｆｆｉ子（２）（７）第１、第２（７）絶ｆＦｉ（
５）（７）を同一構造、材質にて、従来製法と本発明製
法にて形成した２つのＥＬ素子の輝度と発光効率の実験
結果を、第２図と第３図の特性図に示すと、次のことが
分かる。但し、第２図が本発明品、第３図が従来品の特
性図で、この特性図の横軸はＥＬ素子（２）の上下両電
極（４）（８）間に加える印加電極（Ｖ）、縦軸は輝度
と発光効率である。この第１図と第２図から、本発明品
は従来品よりも輝度、発光効率が共に約２倍も向上して
いることが分かる。ELffi child (2) (7) first, second (7) absolute fFi (
5) The experimental results of the brightness and luminous efficiency of two EL elements formed by the conventional manufacturing method and the manufacturing method of the present invention with the same structure and material as in (7) are shown in the characteristic diagrams of Figures 2 and 3. , we know the following. However, Fig. 2 shows the characteristics of the product according to the present invention, and Fig. 3 shows the characteristics of the conventional product. ), and the vertical axis is luminance and luminous efficiency. From FIG. 1 and FIG. 2, it can be seen that the product of the present invention has improved luminance and luminous efficiency about twice as much as the conventional product.
尚、本発明方法で形成されるＴａ２Ｏ５スパッタ膜の下
地はＡＪ２Ｏ３蒸着膜やＹ２Ｏ３蒸着膜に限らず、他の
絶縁膜や、透明電極、発光層であっても、Ｔａ２Ｏ５ス
パッタ膜の膜質改善効果は十分に発揮される。Note that the base of the Ta2O5 sputtered film formed by the method of the present invention is not limited to AJ2O3 vapor-deposited film or Y2O3 vapor-deposited film, but even if it is other insulating film, transparent electrode, or light emitting layer, the film quality improvement effect of Ta2O5 sputtered film will not be affected. It is fully demonstrated.
発皿二洟果
本発明によれば、Ｔａ２Ｏ５スパッタ膜による絶縁層の
緻密性、結合性、絶縁性が一段と向上し、従って薄膜Ｅ
Ｌパネルの輝度や発光効率の大幅な改善が可能となる。According to the present invention, the density, bonding properties, and insulation properties of the insulating layer formed by the Ta2O5 sputtered film are further improved, so that the thin film E
It is possible to significantly improve the brightness and luminous efficiency of the L panel.
また、本発明方法は既設のスパッタ装置の被スパツタ物
保持側の基板電極に高周波バイアスを印加するだけで実
施できるので、設備投資的に有利な製法が提供できる。Furthermore, since the method of the present invention can be carried out by simply applying a high frequency bias to the substrate electrode on the side of the sputtering object holding side of the existing sputtering apparatus, it is possible to provide a manufacturing method that is advantageous in terms of equipment investment.
第１図は本発明方法を実施するスパッタ装置の概略側面
図、第２図及び第３図は夫々本発明方法及び従来製法で
製作された薄膜ＥＬパネルの輝度と発光効率の特性図、
第４図は薄膜ＥＬパネルの断面図で、左半分はＸ方向の
断面図、右半分はＹ方向の断面図、第５図は第４図の一
部拡大断面図、第６図は従来製法によるスパッタ装置の
概■側面図である。
（１） −絶縁基板（ガラス基板）、
（２） −Ｅ Ｌ素子、 （５）、（７） −絶縁層
、（５ｂ）、（７ｂ） −・−Ｔ ａ ２Ｏ ｓスパッ
タ膜、（１２） 一基板電極、
Ｖ２−・−高周波バイアス（電圧）。
中カロ境ｌ、砧（ｖ）
ψ加電圧（ｖ）
４１４図
第５図
第６図FIG. 1 is a schematic side view of a sputtering apparatus for carrying out the method of the present invention, and FIGS. 2 and 3 are characteristic diagrams of luminance and luminous efficiency of thin film EL panels manufactured by the method of the present invention and the conventional manufacturing method, respectively.
Figure 4 is a cross-sectional view of a thin film EL panel, the left half is a cross-sectional view in the X direction, the right half is a cross-sectional view in the Y direction, Figure 5 is a partially enlarged cross-sectional view of Figure 4, and Figure 6 is a conventional manufacturing method. 1 is a schematic side view of a sputtering apparatus according to the present invention. (1) - Insulating substrate (glass substrate), (2) - E L element, (5), (7) - Insulating layer, (5b), (7b) - -T a 2Os sputtered film, (12) One substrate electrode, V2-.--high frequency bias (voltage). Nakako boundary l, Kinuta (v) ψ applied voltage (v) 414 Figure 5 Figure 6
Claims (1)
のＴａ＿２Ｏ＿５スパッタ膜による絶縁層を形成するに
際し、 Ｔａ＿２Ｏ＿５のスパツタ時に前記基板電極に高周波バ
イアスを印加することを特徴とする薄膜ＥＬパネルの製
造方法。(1) Manufacturing a thin film EL panel characterized in that when forming an insulating layer of a Ta_2O_5 sputtered film of a thin film EL element on an insulating substrate held by a substrate electrode, a high frequency bias is applied to the substrate electrode during sputtering of Ta_2O_5. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61005611A JPS62163288A (en) | 1986-01-13 | 1986-01-13 | Manufacture of thin film el panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61005611A JPS62163288A (en) | 1986-01-13 | 1986-01-13 | Manufacture of thin film el panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62163288A true JPS62163288A (en) | 1987-07-20 |
Family
ID=11615992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61005611A Pending JPS62163288A (en) | 1986-01-13 | 1986-01-13 | Manufacture of thin film el panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62163288A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027390A (en) * | 1988-06-27 | 1990-01-11 | Nippon Soken Inc | Thin film electro luminescence element |
-
1986
- 1986-01-13 JP JP61005611A patent/JPS62163288A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027390A (en) * | 1988-06-27 | 1990-01-11 | Nippon Soken Inc | Thin film electro luminescence element |
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