JPH0824071B2 - Thin film electroluminescent device - Google Patents
Thin film electroluminescent deviceInfo
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- JPH0824071B2 JPH0824071B2 JP62288676A JP28867687A JPH0824071B2 JP H0824071 B2 JPH0824071 B2 JP H0824071B2 JP 62288676 A JP62288676 A JP 62288676A JP 28867687 A JP28867687 A JP 28867687A JP H0824071 B2 JPH0824071 B2 JP H0824071B2
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- film
- light emitting
- emitting layer
- thin film
- insulating
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高輝度、高効率な薄膜エレクトロルミネセ
ンス素子（以下、薄膜EL素子と記述する）に関するもの
である。The present invention relates to a high-luminance, high-efficiency thin film electroluminescent device (hereinafter referred to as a thin film EL device).
II−VI族化合物半導体、例えば硫化亜鉛（ZnS）を母
体とし、これに発光中心を形成するマンガン（Mn）、あ
るいは希土類化合物等を添加した薄膜を発光層とし、こ
の両側に酸化物、あるいは窒化物等の絶縁層（誘電体
層）薄膜をサンドイッチ状に設け、更にこの薄膜構造体
を、その一方が透明な一対の対向電極で挟持した薄膜EL
素子は周知であり、対向電極間に交流電圧を印加するこ
とによって高輝度に発光し、しかも長寿命であることが
知られている。A II-VI group compound semiconductor, for example, zinc sulfide (ZnS) is used as a host material, and a thin film in which manganese (Mn) that forms an emission center is added to this or a rare earth compound is used as a light emitting layer. Insulating layer (dielectric layer) such as objects is provided in a sandwich shape, and this thin film structure is sandwiched by a pair of transparent electrodes, one of which is transparent.
The element is well known, and is known to emit light with high brightness by applying an AC voltage between opposed electrodes and has a long life.
第５図は従来の薄膜EL素子の断面構造図を示すもので
あり、図において１はガラス基板、２はIn2O3:Sn等から
なる透明電極膜、３はTa2O5、Sm2O3、Y2O3、Al2O3、Si3
N4、SiO2、等の内の１種類、或は２種類以上の膜からな
る第１絶縁層膜、４はMnあるいは希土類化合物を添加し
たZnSあるいはSrS等のII−VI族化合物半導体発光層膜、
５は３と同様な第２絶縁層膜、６はAl等よりなる背面金
属電極膜である。FIG. 5 is a cross-sectional structural view of a conventional thin film EL element, in which 1 is a glass substrate, 2 is a transparent electrode film made of In 2 O 3 : Sn, etc., 3 is Ta 2 O 5 , Sm 2 O 3 , Y 2 O 3 , Al 2 O 3 , Si 3
First insulating layer film consisting of one kind or two or more kinds of N 4 , SiO 2 , etc., and 4 is a II-VI group compound semiconductor light emitting layer such as ZnS or SrS to which Mn or a rare earth compound is added film,
Reference numeral 5 is a second insulating layer film similar to 3, and 6 is a back metal electrode film made of Al or the like.
このような構造の薄膜EL素子に交流電圧を印加した
時、発光層内部の電界強度が約106V/cm程度になると、
絶縁層と発光層の界面等から生成され電界で加速された
電子が発光中心物質を衝突励起することによって、EL発
光が得られる。When an AC voltage is applied to the thin film EL device having such a structure, when the electric field strength inside the light emitting layer becomes about 10 6 V / cm,
EL emission is obtained by the collisional excitation of the emission center substance by the electrons generated from the interface between the insulating layer and the light emitting layer and accelerated by the electric field.
第５図に示したような発光層膜を絶縁層膜でサンドイ
ッチ状に挟んだ、通常２重絶縁構造と呼ばれている構成
の素子では、IBMのMarrelloらによって報告されている
（J.Appl.Phys.、52、（1981）、3590）ように、特にZn
S:Mnを発光層に用いた場合、効率良く発光するのは発光
層の中でも絶縁層に近い領域であり、発光層の中心部で
の発光効率は低いと考えられている。しかしながら、こ
れまでは発光層の中心部の効率の良くない部分を如何に
効率よく発光せしめ、その結果として素子全体の発光効
率を向上させる手段は明確にはされていなかった。発光
効率を改善するためには、単に発光層膜の結晶性を向上
させ、素子全体の発光効率を向上させるという方法しか
知られていなかった。A device having a structure normally called a double insulation structure in which a light emitting layer film as shown in FIG. 5 is sandwiched between insulating layer films is reported by Marrello et al. Of IBM (J. Appl. .Phys., 52, (1981), 3590), especially Zn
When S: Mn is used for the light emitting layer, it is considered that the region which emits light efficiently is a region close to the insulating layer in the light emitting layer, and the light emitting efficiency in the central portion of the light emitting layer is low. However, hitherto, no means has been clarified as to how efficiently the inefficient part of the central part of the light emitting layer is caused to emit light and as a result, the luminous efficiency of the entire device is improved. In order to improve the luminous efficiency, only the method of improving the crystallinity of the light emitting layer film and improving the luminous efficiency of the entire device has been known.
本発明はこの欠点を解決するために発明されたもの
で、薄膜ELの素子構造の内の発光層中に発光中心を衝突
励起する電子を注入する層を設けることによって、高輝
度で高効率な薄膜エレクトロルミネセンス素子を提供す
ることを目的とするものである。The present invention was invented to solve this drawback, and by providing a layer for injecting electrons that collide and excite the emission center in the light emitting layer in the device structure of the thin film EL, high brightness and high efficiency can be obtained. It is an object of the present invention to provide a thin film electroluminescent device.
上記の目的を達成するため、本発明は薄膜構造体を一
対の電極で挟持し、交流電圧を当該電極間に印加して発
光せしめる薄膜エレクトロルミネセンス素子において、
発光層膜中に誘電損失が１％以上の低絶縁性誘電体膜か
らなる電子注入層を挿入したことを特徴とするものであ
る。In order to achieve the above object, the present invention is a thin film electroluminescent element that sandwiches a thin film structure with a pair of electrodes, and applies an AC voltage between the electrodes to emit light.
An electron injection layer made of a low insulating dielectric film having a dielectric loss of 1% or more is inserted in the light emitting layer film.
次に本発明の実施例を添付図面に従って説明する。な
お、実施例は一つの例示であって、本発明の精神を逸脱
しない範囲で、種種の変更あるいは改良を行いうること
は言うまでもない。Next, an embodiment of the present invention will be described with reference to the accompanying drawings. Needless to say, the embodiment is merely an example, and various modifications and improvements can be made without departing from the spirit of the present invention.
（実施例１） 第１図は本発明の薄膜EL素子の断面構成図の一例を示
すものであって、図において７はガラス基板、８は透明
電極膜、９は絶縁層膜、10は発光層膜、11は誘電損失が
１％以上の低絶縁性誘電体膜からなる電子注入層、12は
発光層膜、13は絶縁層膜、14は背面金属電極膜（背面電
極膜）である。17は絶縁層膜９、13、発光層膜10、12か
らなる薄膜構造体である。(Example 1) FIG. 1 shows an example of a cross-sectional configuration diagram of a thin film EL element of the present invention, in which 7 is a glass substrate, 8 is a transparent electrode film, 9 is an insulating layer film, and 10 is light emission. A layer film, 11 is an electron injection layer made of a low insulating dielectric film having a dielectric loss of 1% or more, 12 is a light emitting layer film, 13 is an insulating layer film, and 14 is a back metal electrode film (back electrode film). Reference numeral 17 is a thin film structure including insulating layer films 9 and 13 and light emitting layer films 10 and 12.
第１図の薄膜EL素子を作製するにあたり、ガラス基板
７としてホヤ製のNA40を用いた。このガラス基板上にIn
2O3:Sn透明電極膜８を200nm、スパッタ法で形成した。
次に、絶縁層膜９としてTa2O5を高周波マグネトロン・
スパッタ法により300nm、発光層膜10としてZnS:Mnを電
子ビーム蒸着法により500nm、低絶縁性誘電体膜11とし
て誘電損失が５％以上のSiO2（lr−SiO2）を高周波マグ
ネトロン・スパッタ法により50nm、発光層膜12として10
と同様にZnS:Mnを500nm、絶縁層膜13として９と同様にT
a2O5を300nm、順次、積層形成した。そして、最後に背
面金属電極膜14としてAlを電子ビーム蒸着法により100n
m形成して薄膜EL素子を作製した。また、比較のために
上記構成から低絶縁性誘電体膜11を除いた従来の構造の
素子を同時に作製した。以下、低絶縁性誘電体膜11を含
む素子を素子Ａ、含まない素子を素子Ｂと呼ぶこととす
る。When manufacturing the thin film EL element of FIG. 1, NA40 manufactured by Hoya was used as the glass substrate 7. In on this glass substrate
A 2 O 3 : Sn transparent electrode film 8 having a thickness of 200 nm was formed by a sputtering method.
Next, Ta 2 O 5 was used as the insulating layer film 9 for the high frequency magnetron.
300 nm by the sputtering method, 500 nm by ZnS: Mn as the light emitting layer film by the electron beam evaporation method, and SiO 2 (lr-SiO 2 ) with a dielectric loss of 5% or more is used as the low insulating dielectric film 11 by the high frequency magnetron sputtering method. By 50 nm, 10 as the light emitting layer film 12
ZnS: Mn is 500 nm, and the insulating layer film 13 is T
A 2 O 5 of 300 nm was sequentially laminated. Finally, as the back metal electrode film 14, 100n of Al was deposited by the electron beam evaporation method.
A thin film EL device was manufactured by forming m. Further, for comparison, an element having a conventional structure in which the low-insulating dielectric film 11 was removed from the above structure was simultaneously manufactured. Hereinafter, an element including the low insulating dielectric film 11 will be referred to as an element A, and an element not including the low insulating dielectric film 11 will be referred to as an element B.
第２図に、周波数1kHzの正弦波電圧で素子を駆動した
ときの輝度−電荷（Ｌ−Ｑ）特性を示す。素子Ａでは素
子Ｂに比べて、同じ電荷密度で駆動した時に得られる輝
度が高い。また、輝度、発光効率などの素子特性を表１
にまとめて示す。FIG. 2 shows the luminance-charge (L-Q) characteristics when the device is driven by a sine wave voltage having a frequency of 1 kHz. Element A has higher luminance than element B when driven with the same charge density. Table 1 shows device characteristics such as brightness and luminous efficiency.
Are shown together.
発光層中にlr−SiO2層を挿入することにより、輝度、
効率が40％程度向上し、輝度の立ち上がり特性（dL/d
Q）が急峻になる。素子Ｂで発光層膜を２回に分けて蒸
着形成したことによる素子特性への影響は、Theisらの
報告（J of Crystal Growth、63、（1983）、47）から
無視できるものと思われる。従って、以上の結果から、
発光層膜／低絶縁性誘電体層の界面近傍が発光層膜の中
心部より強く発光していること、及びZnS:Mn発光層膜の
中に低絶縁性のSiO2層を挿入することが発光効率、並び
に発光輝度の改善に極めて有効であることがわかった。 By inserting the lr-SiO 2 layer in the light emitting layer, the brightness,
Efficiency improved by about 40%, and brightness rising characteristics (dL / d
Q) becomes steep. The effect of the vapor deposition of the light emitting layer film in the device B divided into two times on the device characteristics is considered to be negligible from the report of Theis et al. (J of Crystal Growth, 63 , (1983), 47). Therefore, from the above results,
Light emission is stronger near the interface between the light emitting layer film / low dielectric insulating layer than in the center of the light emitting layer film, and a low insulating SiO 2 layer is inserted in the ZnS: Mn light emitting layer film. It was found to be extremely effective in improving the luminous efficiency and the luminous brightness.
実施例においては、発光層膜の中に一層のみ、本発明
の骨子である低絶縁性の誘電体膜を配置した構造につい
て述べたが、これは一層だけに限る必要はなく、二層や
三層というように複数層用いても良い。In the embodiments, the structure in which only one layer of the low-insulating dielectric film, which is the essence of the present invention, is arranged in the light emitting layer film is described, but this is not limited to one layer, and two layers or three layers are provided. You may use multiple layers like a layer.
次に、本発明の要素技術となる絶縁膜の誘電損失の制
御法について述べる。上記実施例中の低絶縁性誘電体層
11に用いたSiO2は誘電損失が５％以上の低絶縁性膜であ
った。同じ材料でも成膜法により絶縁性は変化し、SiO2
を例にとると、本発明の方法、即ちSiO2の酸化物ターゲ
ットを用いてマグネトロン・スパッタ法により膜形成を
行う場合には、成膜時のガス雰囲気により形成した膜の
絶縁性が変化する。膜形成時の雰囲気を酸素を含まない
不活性ガスとするとできた膜は上記実施例に示したよう
な低絶縁性膜となり、成膜時の雰囲気の酸素濃度を増す
に従って高絶縁性の膜とすることができる。即ち、成膜
時のガス雰囲気を調整することにより、誘電損失を0.2
から20％まで任意に制御したSiO2膜を得ることができ
る。Next, a method of controlling the dielectric loss of the insulating film, which is the elemental technology of the present invention, will be described. Low insulating dielectric layer in the above examples
The SiO 2 used for 11 was a low insulating film having a dielectric loss of 5% or more. Insulation even by film forming method of the same material changes, SiO 2
For example, in the case of forming a film by the method of the present invention, that is, a magnetron sputtering method using an oxide target of SiO 2 , the insulating property of the formed film changes depending on the gas atmosphere during film formation. . The film formed when the atmosphere at the time of film formation was an inert gas containing no oxygen became a low insulating film as shown in the above example, and as the oxygen concentration of the atmosphere at the time of film formation was increased, can do. That is, by adjusting the gas atmosphere during film formation, the dielectric loss can be reduced to 0.2.
It is possible to obtain a SiO 2 film which is arbitrarily controlled from 10 to 20%.
以上の実施例においては低絶縁性誘電体層11には誘電
損失５％以上のSiO2膜を用いたが、誘電損失の値の範囲
としては、１％以上が適当である。誘電損失が１％以下
になると、注入される電子の数が減少するため、輝度、
効率の改善効果が低減する。In the above examples, the SiO 2 film having a dielectric loss of 5% or more was used for the low insulating dielectric layer 11, but the range of the value of the dielectric loss is preferably 1% or more. When the dielectric loss is less than 1%, the number of injected electrons decreases, so the brightness,
The efficiency improvement effect is reduced.
また、絶縁層９と発光層10の間、及び発光層12と絶縁
層13との間に低絶縁性誘電体層を挟んだ構造とすれば、
それぞれの界面近傍での発光効率が改善され、更に発光
特性は向上する。なお、低絶縁性絶縁層の膜厚は、駆動
電圧の増加を最小限に抑えるという観点から、10〜100n
mが適当である。Further, if the low insulating dielectric layer is sandwiched between the insulating layer 9 and the light emitting layer 10 and between the light emitting layer 12 and the insulating layer 13,
Luminous efficiency in the vicinity of each interface is improved, and further luminescent characteristics are improved. The thickness of the low-insulating insulating layer is 10 to 100 n from the viewpoint of minimizing the increase in driving voltage.
m is suitable.
（実施例２） 第３図に発光層の両側にも低絶縁性誘電体層15、16を
設けた構造を示した。この構造の素子を素子Ｃとする。
素子Ｃと従来構造の素子Ｂとの発光特性を比較して表２
に示す。また、素子Ｃと素子ＢのＬ−Ｑ特性を第４図に
示す。表、及び図の結果から、素子Ｃの構造では更に発
光特性が著しく改善されること明らかである。Example 2 FIG. 3 shows a structure in which low insulating dielectric layers 15 and 16 are provided on both sides of the light emitting layer. The element having this structure is referred to as an element C.
The light emission characteristics of the element C and the element B having the conventional structure are compared and shown in Table 2.
Shown in Further, the LQ characteristics of the element C and the element B are shown in FIG. From the results of the table and the figures, it is clear that the structure of the device C further significantly improves the light emission characteristics.
本発明、及びその効果は上記実施例中に記述した材料
になんら限定されるものではなく、例えばガラス基板と
しては、コーニング7059を用いても同様の効果が得られ
る。その他、発光層としてはTb、Sm、Ce等の希土類化合
物を添加したZnS、SrS、CaS等のII−VI族化合物半導体
薄膜、第１図の絶縁層９、13に用いる絶縁層としてはSr
TiO3、BaTiO3、PbTiO3、BaTa2O6、Ta2O5、Sm2O3、Y
2O3、Al2O3、Si3N4、SiO2薄膜等、あるいはこれらを２
種類以上組み合わせた複合層を用いても同様の効果が期
待できる。また、上記の実施例においては、薄膜構造体
17の構成として、絶縁層膜を電極膜８、14の両方の側に
設けたが、この絶縁層膜は電極膜８、14のいずれか一方
の側に設けるだけであってもよい。更に、第１図の低絶
縁性誘電体膜11に用いる絶縁層としては、SiO2の他に誘
電損失が１％以上になるよう成膜条件を制御して作製し
たTa2O5、Sm2O3、Y2O3、Al2O3、Si3N4薄膜等を用いても
同様な効果が期待できる。実際に、低絶縁性誘電体膜と
してマグネトロン・スパッタ法で形成したAl2O3をSiO2
の代わりに用いて行ったところ、同様の効果が得られ
た。 The present invention and its effects are not limited to the materials described in the above embodiments, and similar effects can be obtained even if Corning 7059 is used as the glass substrate, for example. In addition, the light emitting layer is a II-VI group compound semiconductor thin film such as ZnS, SrS, and CaS to which a rare earth compound such as Tb, Sm, and Ce is added, and Sr is used as the insulating layers 9 and 13 in FIG.
TiO 3 , BaTiO 3 , PbTiO 3 , BaTa 2 O 6 , Ta 2 O 5 , Sm 2 O 3 , Y
2 O 3 , Al 2 O 3 , Si 3 N 4 , SiO 2 thin film, etc.
The same effect can be expected by using a composite layer in which more than one kind is combined. Also, in the above example, the thin film structure
In the configuration of 17, the insulating layer film is provided on both sides of the electrode films 8 and 14, but the insulating layer film may be provided only on one side of the electrode films 8 and 14. Further, as the insulating layer used for the low-insulating dielectric film 11 of FIG. 1, Ta 2 O 5 , Sm 2 other than SiO 2 was prepared by controlling the film forming conditions so that the dielectric loss was 1% or more. The same effect can be expected by using O 3 , Y 2 O 3 , Al 2 O 3 , and Si 3 N 4 thin films. Actually, Al 2 O 3 formed by the magnetron sputtering method was used as SiO 2 as the low insulating dielectric film.
The same effect was obtained when used instead of.
以上説明したように、本発明の素子は発光特性が優れ
ていることから、本発明の素子を用いれば高輝度で高効
率の薄膜EL表示パネルを製造できるという利点がある。As described above, since the device of the present invention has excellent light emitting characteristics, there is an advantage that a thin film EL display panel having high brightness and high efficiency can be manufactured by using the device of the present invention.
第１図は本発明の一実施例として示した薄膜EL素子の断
面図、第２図は本発明による素子、及び従来素子の輝度
−電荷特性を示すグラフ、第３図は本発明の別の実施例
として示した薄膜EL素子の断面図、第４図は本発明によ
る素子、及び従来素子の輝度−電荷特性を示すグラフ、
第５図は従来の薄膜EL素子の断面図である。 ８……透明電極、９、13……絶縁層膜、10、12……発光
層膜、11、15、16……電子注入層（低絶縁性誘電体
膜）、14……背面電極膜（背面金属電極膜）、17……薄
膜構造体。FIG. 1 is a sectional view of a thin film EL device shown as an embodiment of the present invention, FIG. 2 is a graph showing the luminance-charge characteristics of the device according to the present invention and a conventional device, and FIG. 3 is another graph of the present invention. FIG. 4 is a cross-sectional view of a thin film EL device shown as an example, FIG. 4 is a graph showing luminance-charge characteristics of the device according to the present invention and a conventional device,
FIG. 5 is a sectional view of a conventional thin film EL device. 8 ... Transparent electrode, 9, 13 ... Insulating layer film, 10, 12 ... Emitting layer film, 11, 15, 16 ... Electron injection layer (low insulating dielectric film), 14 ... Back electrode film ( Back metal electrode film), 17 ... Thin film structure.
Claims (3)
なる一対の電極膜で挟持し、交流電圧を当該電極膜間に
印加して発光せしめる薄膜エレクトロルミネセンス素子
において、発光層膜の中に誘電損失が１％以上の低絶縁
性誘電体膜からなる電子注入層を設けた構造とすること
を特徴とする薄膜エレクトロルミネセンス素子。1. A thin-film electroluminescent device in which a thin film structure is sandwiched between a pair of electrode films composed of a transparent electrode film and a back electrode film, and an AC voltage is applied between the electrode films to cause light emission, a light emitting layer film. A thin film electroluminescent device having a structure in which an electron injection layer made of a low insulating dielectric film having a dielectric loss of 1% or more is provided.
SiO2、Ta2O5、Sm2O3、Y2O3、Al2O3、Si3N4のいずれかの
膜で構成されることを特徴とする特許請求の範囲第１項
記載の薄膜エレクトロルミネセンス素子。2. An electron injection layer provided in the light emitting layer film,
The film according to claim 1, wherein the film is composed of any one of SiO 2 , Ta 2 O 5 , Sm 2 O 3 , Y 2 O 3 , Al 2 O 3 and Si 3 N 4 . Thin film electroluminescent device.
SiO2、Ta2O5、Sm2O3、Y2O3、Al2O3、Si3N4のいずれかの
膜で構成され、かつ上記発光層膜の両側にも誘電損失が
１％以上のSiO2、Ta2O5、Sm2O3、Y2O3、Al2O3、Si3N4の
いずれかの膜が設けられていることを特徴とする特許請
求の範囲第１項記載の薄膜エレクトロルミネセンス素
子。3. The electron injection layer provided in the light emitting layer film,
It is composed of any one of SiO 2 , Ta 2 O 5 , Sm 2 O 3 , Y 2 O 3 , Al 2 O 3 and Si 3 N 4 , and has a dielectric loss of 1% on both sides of the light emitting layer film. The above-mentioned SiO 2 , Ta 2 O 5 , Sm 2 O 3 , Y 2 O 3 , Al 2 O 3 , or Si 3 N 4 film is provided. A thin film electroluminescent device according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62288676A JPH0824071B2 (en) | 1987-11-16 | 1987-11-16 | Thin film electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62288676A JPH0824071B2 (en) | 1987-11-16 | 1987-11-16 | Thin film electroluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01130495A JPH01130495A (en) | 1989-05-23 |
| JPH0824071B2 true JPH0824071B2 (en) | 1996-03-06 |
Family
ID=17733243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62288676A Expired - Lifetime JPH0824071B2 (en) | 1987-11-16 | 1987-11-16 | Thin film electroluminescent device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0824071B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3274527B2 (en) * | 1992-09-22 | 2002-04-15 | 株式会社日立製作所 | Organic light emitting device and its substrate |
| KR960028705A (en) * | 1994-12-08 | 1996-07-22 | 이헌조 | Color electroluminescent (EL) device and its manufacturing method |
| JP4928329B2 (en) * | 2007-03-30 | 2012-05-09 | 株式会社クラレ | Thin film inorganic EL element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5665492A (en) * | 1979-10-30 | 1981-06-03 | Sharp Kk | Thin film el element |
| JPS59157996A (en) * | 1983-02-25 | 1984-09-07 | 松下電工株式会社 | El light emitting element |
-
1987
- 1987-11-16 JP JP62288676A patent/JPH0824071B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01130495A (en) | 1989-05-23 |
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