JPS63133517A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63133517A JPS63133517A JP28032386A JP28032386A JPS63133517A JP S63133517 A JPS63133517 A JP S63133517A JP 28032386 A JP28032386 A JP 28032386A JP 28032386 A JP28032386 A JP 28032386A JP S63133517 A JPS63133517 A JP S63133517A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- identification
- code
- digit
- numbers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 14
- 238000002161 passivation Methods 0.000 abstract description 4
- 238000001039 wet etching Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54406—Marks applied to semiconductor devices or parts comprising alphanumeric information
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の構造に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to the structure of a semiconductor device.
本発明は、半導体装置の内存を識別する記号または数字
の形成において、特に前記半導体装置の具備している機
能を識別する記号または数字を別個に移動拡大して形成
し識別しやすぐしたものである。In the formation of symbols or numbers identifying the presence of a semiconductor device, the present invention particularly provides for easy identification by separately moving and enlarging the symbols or numbers identifying the functions provided in the semiconductor device. be.
従来技術はまず第３図に示したように全ての識別する記
号または数字を一箇所に重ねて形成していたために、識
別は不可能に近かった。また、識別できたにしてもそれ
はたまたま識別する記号または数字が、他の記号または
数字とはっきり見分けやすい場合に限られていた。In the prior art, as shown in FIG. 3, all identifying symbols or numbers were formed in one place, making identification nearly impossible. Furthermore, even if identification was possible, it was limited to cases where the symbols or numbers that happened to be identified were easily distinguishable from other symbols or numbers.
また、第４図（ａ）、（ｔ））に識別する記号または数
字を移動して別位置に別個に形成した従来技術例を示す
。この別個に形成した記号または数字を十分に大きい寸
法で形成すればよかったが従来はほぼ製造する半導体装
置の設計されている寸法（デザインルール）が蛾も多用
されている所から最小寸法またはそれに近い寸法で形成
されていた。このために第４図（ａ）のように、最終パ
シベーション膜で形成された識別する記号または数字は
、変形して判読が困難なものとなってしまう事が発生し
た。Further, FIGS. 4(a) and 4(t)) show examples of prior art in which identifying symbols or numbers are moved and formed separately at different positions. It was sufficient to form these separately formed symbols or numbers with sufficiently large dimensions, but in the past, the designed dimensions (design rules) of almost all manufactured semiconductor devices were at or close to the minimum dimensions, which are often used. It was formed with dimensions. For this reason, as shown in FIG. 4(a), the identifying symbols or numbers formed on the final passivation film are deformed and become difficult to read.
このように第５図および第４図（ａ）、 （１））で示
した従来の技術では製造している途中でも、製造してい
る半導体装置が正規に指示された内容で製造されている
かの識別が半導体装置そのものからはむずかしく、半導
体基板の表面または裏面に印字しである。工程管理用の
識別番号よシ推定するか、工程中を流動する時に半導体
装置の製造工程の内容順序を記入した工程衣を見て判別
するしかなかった。このため、同一の工程流動単位の中
に複数の内容を持つ半導体装置、特にその一部のみの変
更で具備する機能が異なるゲートアレイ、スタンタート
セルマスクＲＯＭ等のセミカスタム半導体装置の場合は
より困峻度は増し、工程の負荷は大きく、作業ミスは直
しようもない致命的な物となる事があった。また、半導
体装置が製品となって完成し１つ１つのチップ形状とな
ると、その内容を識別できる手段は識別する記号または
数字のみで６シこれが判別不明なれ、は、後は電気特性
の面から行なうしかなく、これはコスト面から言って不
可能であフ実用上手段がなくなってしまうという事態に
なってしまう。In this way, with the conventional technology shown in FIG. 5 and FIGS. 4(a) and (1)), even during the manufacturing process, it is difficult to check whether the semiconductor device being manufactured is being manufactured according to the specified contents. This is difficult to identify from the semiconductor device itself; it is printed on the front or back side of the semiconductor substrate. The only way to identify a semiconductor device is to estimate it based on an identification number used for process control, or to look at the process uniform on which the sequence of the semiconductor device manufacturing process is written as it moves through the process. Therefore, in the case of semiconductor devices that have multiple contents in the same process flow unit, especially semi-custom semiconductor devices such as gate arrays and stand-by cell mask ROMs that have different functions by changing only a part of them, The difficulty level increased, the process load increased, and work errors could become fatal and uncorrectable. In addition, when a semiconductor device is completed as a product and takes the form of individual chips, the only way to identify its contents is through identification symbols or numbers. This would be impossible from a cost perspective, and would result in a situation where there would be no practical means to do so.
本発明が解決しようとする問題点は、半導体装置が工程
途中を流動されているウェハー状の時や１つ１つに分割
された形となったときに、その半導体装置が具備してい
る機能を識別する記号または数字が判別できなくなると
いう事であり、その目的は前述の判別するための工数を
少しでも軽減する事であり、判別できないか判別できな
い程に変形してしまうような識別する記号または数字を
、いつでも顕微境等で簡単に判別できるように改善する
ことであシ、工程流動中の負荷を低減する事である。The problem to be solved by the present invention is that when a semiconductor device is in the form of a wafer being flown during a process or when it is divided into individual pieces, the functions that the semiconductor device has are The purpose of this is to reduce the man-hours required for the above-mentioned identification as much as possible. Alternatively, it is possible to improve the numbers so that they can be easily distinguished under a microscope or the like at any time, thereby reducing the load during process flow.
前述の問題点を解決するために、半導体装置の具備する
機能を識別する記号または数字を、判別しやすい位置に
移動し判別しやすい大きさで形成するものである。In order to solve the above-mentioned problems, the symbols or numbers that identify the functions provided by the semiconductor device are moved to positions where they can be easily distinguished and formed in sizes that are easy to distinguish.
実施例１
本発明による実施例１の平面図を第１図（＋Ｌ）Ｉ（ｂ
）に示す。実施例１は、半導体装置の識別する記号と数
字を金属配線層で形成したものである。Embodiment 1 A plan view of Embodiment 1 according to the present invention is shown in FIG.
). In Example 1, symbols and numbers for identifying a semiconductor device are formed using a metal wiring layer.
この方法は、金属配線層を用いて機能作り込むゲートア
レイ、スタンダードセル等のセミカスタム半導体装置お
よび金属配線層を用いて信号出し入れのパッド配置を変
更する半導体装置等に用いた。This method has been used for semi-custom semiconductor devices such as gate arrays and standard cells in which functions are created using metal wiring layers, and semiconductor devices in which the arrangement of pads for inputting and outputting signals is changed using metal wiring layers.
実施例２
第２図（ａ）、（１））に実施例２の平面図を示す。半
導体装置を識別する記号と数字をパシベーション膜で形
成したものである。また、記号と数字を形成する方法と
してウェットエツチング方法によるために、パターンの
大きさを実施例１よυ太くし、１０μｒｍルールで形成
した。これよシ細い場合、特に５μｍ以下になるとウェ
ットエツチング時のサイドエツチングによシ隣接するパ
ターン同志が判別不能のようになってしまう。パターン
を太くする事により、容易に判別が可能となった。Example 2 A plan view of Example 2 is shown in FIGS. 2(a) and (1)). Symbols and numbers identifying the semiconductor device are formed using a passivation film. Furthermore, since the wet etching method was used to form the symbols and numbers, the size of the pattern was made υ thicker than in Example 1, and was formed according to the 10 μrm rule. If the thickness is thinner than this, especially if it is less than 5 μm, adjacent patterns become indistinguishable due to side etching during wet etching. By making the pattern thicker, it became easier to distinguish.
本発明れ効果は、前述の実施例１および実施例２のよう
に、半導体装置の具備している機能を識別する記号また
は数字の判別が容易になった事が第１である。また判別
が容易になった事により、工程の安定化が計られた効果
も大きい。特に半導体装置の中でも、セミカスタム半導
体装置は、少量多品種の製品であシ、さらには、短納期
を強く要求され、ている製品でもある。そのため、作業
ミスは、絶対避けなければならないものであシ、製品の
判別の容易さの必要性・重要度はよシ増すものである。The first advantage of the present invention is that, as in the first and second embodiments described above, the symbols or numbers that identify the functions provided by the semiconductor device can be easily distinguished. Also, because it has become easier to distinguish, it has a great effect on stabilizing the process. Particularly among semiconductor devices, semi-custom semiconductor devices are products that are manufactured in small quantities with a wide variety of products, and are also products that are strongly required to have short delivery times. Therefore, operational errors must be avoided at all costs, and the necessity and importance of making it easy to distinguish between products is increasing.
また、本発明の効果は、半導体装置のフォトマスク名称
の確酩用としても使用できるものである。Furthermore, the effects of the present invention can also be used to confirm the name of a photomask for a semiconductor device.
“第１図（ａＬ （ｂ）は本発明による実施例を示す半
導体装置の平面図。
第２図（ａＬ （１））は本発明による実施例を示す半
導体装置の平面図。
第３図は従来技術による半導体装置の平面図。
第４図（ａ）、 （１））は従来技術による半導体装置
の平面図。
１・・・半導体装置の識別する記号と数字２・・・金属
配線層の識別する記号と数字３・・・パシベーション膜
の識別する記号と数字以 上
出Ｊ［人 セイコーエプソン株式会社代理人 弁理士
最 上 務他１名
（α０"FIG. 1 (aL (b)) is a plan view of a semiconductor device showing an embodiment according to the present invention. FIG. 2 (aL (1)) is a plan view of a semiconductor device showing an embodiment according to the present invention. A plan view of a semiconductor device according to the prior art. Fig. 4(a), (1)) is a plan view of a semiconductor device according to the prior art. 1... Symbols and numbers for identifying the semiconductor device 2... Metal wiring layer Identification symbols and numbers 3... Symbols and numbers that identify passivation films and above
Claims (1)
号または数字において、特に前記半導体装置の具備した
機能を識別する記号または数字を移動拡大して別個に形
成した事を特徴とする半導体装置。1. A semiconductor device, characterized in that among symbols or numbers for identifying a semiconductor device formed on a semiconductor substrate, symbols or numbers for specifically identifying a function provided by the semiconductor device are moved and enlarged to be separately formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61280323A JP2600153B2 (en) | 1986-11-25 | 1986-11-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61280323A JP2600153B2 (en) | 1986-11-25 | 1986-11-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63133517A true JPS63133517A (en) | 1988-06-06 |
| JP2600153B2 JP2600153B2 (en) | 1997-04-16 |
Family
ID=17623397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61280323A Expired - Lifetime JP2600153B2 (en) | 1986-11-25 | 1986-11-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2600153B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5408131A (en) * | 1992-04-20 | 1995-04-18 | Motorola, Inc. | Circuit identifier for use with focused ion beam equipment |
-
1986
- 1986-11-25 JP JP61280323A patent/JP2600153B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5408131A (en) * | 1992-04-20 | 1995-04-18 | Motorola, Inc. | Circuit identifier for use with focused ion beam equipment |
| US6156579A (en) * | 1992-04-20 | 2000-12-05 | Motorola Inc. | Circuit identifier for use with focused ion beam equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2600153B2 (en) | 1997-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |