JPS63125684A - Vacuum treatment device - Google Patents
Vacuum treatment deviceInfo
- Publication number
- JPS63125684A JPS63125684A JP61271290A JP27129086A JPS63125684A JP S63125684 A JPS63125684 A JP S63125684A JP 61271290 A JP61271290 A JP 61271290A JP 27129086 A JP27129086 A JP 27129086A JP S63125684 A JPS63125684 A JP S63125684A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- energy
- molecular flow
- plasma
- electric power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009489 vacuum treatment Methods 0.000 title claims abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000004381 surface treatment Methods 0.000 claims abstract description 3
- 238000012545 processing Methods 0.000 claims description 18
- 230000005469 synchrotron radiation Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims 6
- 239000007924 injection Substances 0.000 claims 6
- 238000011282 treatment Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 238000001451 molecular beam epitaxy Methods 0.000 description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 12
- 229910000077 silane Inorganic materials 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は真空処理装置に関し、例えばエツチング装置
、ＣＶＤ装置９表面酸化装置、アッシャ−装置などに代
表される諸装置において、粉体を製造したり、被処理物
（本願においては単に基板と云う）の表面に薄膜形成、
改質、クリーニング。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to vacuum processing equipment, and can be used to produce powder in various equipment such as etching equipment, CVD equipment, surface oxidation equipment, and asher equipment. or forming a thin film on the surface of the object to be processed (simply referred to as the substrate in this application).
Modification, cleaning.
エツチング等の加工を施す場合に適用して効果が著しい
ものである。It has a remarkable effect when applied to processing such as etching.
（従来の技術とその問題点）
従来のこの種の処理装置で、比較的低真空を利用するも
のでは、真空室内の広範囲の場所にプラズマを作り、そ
のプラズマの生成物を処理に利用するものばかりであり
、被処理物の狭い局部のみに限定してプラズマを作り、
必要とする処理を施すには適しないものばかりであった
。(Conventional technology and its problems) Conventional processing equipment of this type that utilizes a relatively low vacuum creates plasma in a wide area within the vacuum chamber and uses the products of the plasma for processing. The plasma is generated only in a narrow local area of the object to be treated.
All of them were unsuitable for the required treatment.
また、超高真空を使用する分子線エピタキシ装置では、
高濃度の分子線で高速の薄膜堆積をしようとすると、と
かく真空室の背圧を高くし、膜の純度、膜質の変化の歯
切れの良さ等々が犠牲になるという欠点があった。In addition, in molecular beam epitaxy equipment that uses ultra-high vacuum,
Attempting to deposit thin films at high speed using highly concentrated molecular beams has the drawback of increasing the back pressure in the vacuum chamber, which sacrifices the purity of the film and the crispness of changes in film quality.
更にまた、例えば、分子線エピタキシ装置では次の問題
も生じていた。即ち従来の分子線発生源は第２図にその
概略の断面図を示すように、ガス導入口２１より原料ガ
スを導入し、反応管２２内で原料ガスに外部からエネル
ギーを与えてこれを分解し、 （第２図では反応管外周
に配置したヒーター２３て、熱エネルギーを与えている
）、所望の分子種を生成し噴出口２４より分子線として
噴出させている。このため例えば、シリコンのエピタキ
シャル膜を堆積させようとして原料ガスとしてシランを
導入した場合、４００℃程度に反応管２２を加熱すると
原料ガスが分解してシリコンを発生させることが出来る
が、発生したシリコンは反応管内壁に付着し堆積してし
まうという欠点があった。このため反応管の内径がシリ
コンの堆積によって次第に狭くなり、噴出する分子線の
強度が変化してしまう不都合を生じた。またシランの分
解の効率も低下する欠点があった。Furthermore, for example, the following problem has occurred in molecular beam epitaxy equipment. In other words, in the conventional molecular beam generation source, as shown in a schematic cross-sectional view in FIG. (In FIG. 2, thermal energy is applied by a heater 23 placed around the outer periphery of the reaction tube.) Desired molecular species are generated and ejected from the ejection port 24 as molecular beams. For this reason, for example, when silane is introduced as a raw material gas to deposit a silicon epitaxial film, heating the reaction tube 22 to about 400°C will decompose the raw material gas and generate silicon, but the generated silicon has the disadvantage that it adheres and accumulates on the inner wall of the reaction tube. For this reason, the inner diameter of the reaction tube gradually becomes narrower due to the deposition of silicon, resulting in a disadvantage that the intensity of the ejected molecular beam changes. Furthermore, there was a drawback that the efficiency of decomposing silane was reduced.
シリコンを反応管内壁に堆積させないためには、反応管
の壁面温度を２０００°Ｃ以上にする必要かある。しか
し、不純物を含まないシリコン分子線の噴出を得ようと
する場合、現存する如何なる材料を用いても２０００℃
に維持でき、しかもシリコンと反応しない反応管を作る
ことは不可能である。In order to prevent silicon from being deposited on the inner wall of the reaction tube, it is necessary to increase the temperature of the wall surface of the reaction tube to 2000° C. or higher. However, when trying to eject a silicon molecular beam that does not contain impurities, no matter what existing materials are used,
It is impossible to create a reaction tube that can maintain a high temperature and not react with silicon.
上記の問題は、シラン→シリコンの場合だけでなく、ゲ
ルマン→ゲルマニウムの場合もそうであり、分解して出
来た分子種の蒸気圧が、反応管の温度よりも低い場合は
すべて同様である。The above problem applies not only to the case of silane → silicon, but also to the case of germane → germanium, and is the same in all cases where the vapor pressure of the decomposed molecular species is lower than the temperature of the reaction tube.
（発明の目的）
本発明は、」二連の問題を解決し・、比較的低真空を利
用する処理装置では、真空室内の所定の狭い範囲のみに
プラズマを作り、被処理物の狭い局部に限定するなども
して、必要とする処理を施すことが出来る新規な装置の
提供を目的とする。(Objective of the Invention) The present invention solves the two problems. In a processing apparatus that uses a relatively low vacuum, plasma is generated only in a predetermined narrow area within the vacuum chamber, and the plasma is generated in a narrow local area of the object to be processed. The purpose is to provide a new device that can perform the necessary processing, including limiting the amount of time required.
また、超高真空を使用する処理装置、例えば分子線エピ
タキシ装置では、真空室の背圧を高くするおそれなく、
しかも高濃度の分子線で高速な薄膜の堆積を可能にする
装置、更には、分子線発生源の構造材料に原料ガスの分
解生成物が付着するようなことのない装置を提供するこ
とを目的とする。In addition, in processing equipment that uses ultra-high vacuum, such as molecular beam epitaxy equipment, there is no need to worry about increasing the back pressure in the vacuum chamber.
Moreover, the purpose is to provide an apparatus that enables high-speed thin film deposition using highly concentrated molecular beams, and furthermore, an apparatus that does not allow decomposition products of the source gas to adhere to the structural material of the molecular beam generation source. shall be.
（問題を解決するための手段）
本発明は上記の目的を達成するために、新規に工夫され
た分子線発生源を採用する。即ち、真空中に局所的に高
濃度の分子流を発生させる手段と、該高濃度の分子流に
エネルギーを注入してこれをプラズマ化する手段とを備
えた分子線発生源である。そしてこのプラズマ化で生し
た荷電粒子、活性種、放射光等の生成物の少なくとも一
部を用いて、真空室内の限定された局所などで、粉体の
製造、基板の表面処理等の真空処理を行なうものである
。(Means for Solving the Problems) In order to achieve the above object, the present invention employs a newly devised molecular beam generation source. That is, it is a molecular beam generation source equipped with means for locally generating a high concentration molecular flow in a vacuum, and means for injecting energy into the high concentration molecular flow to turn it into plasma. Then, using at least a part of the products such as charged particles, active species, and synchrotron radiation produced by this plasma conversion, vacuum processing such as powder production and substrate surface treatment is performed in a limited area within a vacuum chamber. This is what we do.
例えば、外部から導入された原料ガスはその速度の方向
を一定に整えられ、ガス噴出口より高濃度の分子線とし
て噴出させられる。次いでこの分子線に高周波電力が印
加されてこプラズマ化され、所望の分子種、荷電粒子、
活性種、放射光を生成、これらの少なくとも一部が処理
に使用されるものである。For example, the raw material gas introduced from the outside has its velocity direction fixed, and is ejected from the gas ejection port as a highly concentrated molecular beam. Next, high-frequency power is applied to this molecular beam to turn it into plasma, and the desired molecular species, charged particles,
The active species generates synchrotron radiation, at least a portion of which is used in the process.
（実施例）
次にこの発明の実施例を、分子線エピタキシャル膜の製
造装置で代表させて図を用いて詳細に説明する。(Example) Next, an example of the present invention will be described in detail with reference to the drawings, using a molecular beam epitaxial film manufacturing apparatus as a representative example.
第１図は本発明の実施例の分子線エピタキシ（以下、Ｍ
ＢＥと略す）装置に使用される分子線発生源の正面断面
図である。ここではシランを原料ガスにして、シリコン
基板にシリコンのエピタキシャル膜を作成する場合を例
にとり、説明する。FIG. 1 shows molecular beam epitaxy (hereinafter referred to as M
FIG. 2 is a front cross-sectional view of a molecular beam generation source used in a device (abbreviated as BE). Here, an example will be described in which a silicon epitaxial film is formed on a silicon substrate using silane as a raw material gas.
分子線発生源の本体１０は、真空フランジ１を用いてＭ
ＢＥ装置（図示ぜず）の真空容器壁面に取り付けられて
いる。ガス導入口２にシランガスの供給ラインを取り付
け、一方ガス排気口３にはＭＢＥ装置とは独立した排気
系（図示せず。本例では、ターボ分子ポンプおよびロー
タリーポンプ）を接続し、常時排気を行なっている。The main body 10 of the molecular beam source is constructed using a vacuum flange 1.
It is attached to the wall of the vacuum chamber of the BE device (not shown). A silane gas supply line is attached to the gas inlet 2, while an exhaust system (not shown; in this example, a turbo molecular pump and a rotary pump) independent of the MBE device is connected to the gas exhaust port 3 to ensure constant exhaustion. I am doing it.
図示しないガス供給系より、流量制御された２０ｓｅｃ
ｍのシランカスを矢印１１のようにガス導入口２に導く
と、その導入ガスの分子のうち、横方向の速度ベクトル
を持ったものはその殆どが、ガス整流部４内に多層に設
けられた障壁５に衝突して、ガスの方向を大きく変更し
、ガス排気口３から矢印１２のように排気されてしまう
。20 seconds with flow rate controlled from a gas supply system (not shown)
When the silancus of m is introduced into the gas inlet 2 as shown by the arrow 11, most of the molecules of the introduced gas have horizontal velocity vectors, which are arranged in multiple layers in the gas rectifier 4. The gas collides with the barrier 5, changes the direction of the gas greatly, and is exhausted from the gas exhaust port 3 as shown by the arrow 12.
障壁５の中央孔６の全段を通過したシランガスは、飛行
方向の整った高密度の分子線である。極めて高密度であ
って、例えば、実験ではＭＢＥ装置内の背圧力が１ （
１”’ Ｔｏ ｒ ｒのとき、この分子線強度は基板近
傍で１Ｏ−７Ｔｏｒｒの高さを示し、しかも、整流と排
気の効果は著しく、分子線が前記の背圧を上昇させるこ
とは全くなかった。The silane gas that has passed through all stages of the central hole 6 of the barrier 5 is a high-density molecular beam with a uniform flight direction. For example, in experiments, the back pressure inside the MBE apparatus was 1 (
At 1"' Torr, this molecular beam intensity shows a height of 10-7 Torr near the substrate, and the effects of rectification and exhaust are remarkable, and the molecular beam does not increase the above-mentioned back pressure at all. Ta.
上記のシランガスの分子線はエネルギーを与えられてい
ないので、まだ分解していない。従）て、流路周辺の構
造物に対する付着は、如何なる付着も黙視ては認められ
ない。The silane gas molecular beam described above has not been given energy, so it has not yet decomposed. Therefore, any adhesion to structures around the flow path cannot be ignored.
噴出ロアを噴出したシランの分子線は、超高真空に維持
されたＭＢＥ装置内を、所定の基板に向かって矢印１３
のように飛行するが、その途中で、真空外の高周波電源
９から高周波電力が印加されるコイル８（絶縁物１４を
貫通して真空容器内に導入）の中央部を通過する。この
コイルは水冷されたバイブ１５を数ターン巻かれただけ
のものである。The silane molecular beam ejected from the ejection lower moves in the direction of arrow 13 toward a predetermined substrate within the MBE apparatus maintained in an ultra-high vacuum.
During the flight, it passes through the center of the coil 8 (introduced into the vacuum vessel through the insulator 14) to which high-frequency power is applied from the high-frequency power source 9 outside the vacuum. This coil is simply a water-cooled vibrator 15 wound around a few turns.
分子線は充分な高密度を持つため、分子線はこのコイル
の中央部で高周波電力のエネルギーを吸収して励起され
、プラズマ化し、分解して分子種を生ずる。そしてこの
シランの分解生成物が基板に衝突し、基板上で反応しシ
リコンエピタキシャル膜が堆積する。Since the molecular beam has a sufficiently high density, the molecular beam absorbs the energy of the high-frequency power in the center of this coil, is excited, turns into plasma, and decomposes to generate molecular species. This decomposition product of silane collides with the substrate, reacts on the substrate, and deposits a silicon epitaxial film.
高周波電力を印加しない場合は、基板上では殆んどシリ
コンの堆積が見られない。When high frequency power is not applied, hardly any silicon is deposited on the substrate.
従来の装置では分子線発生源の本体１０の内壁や噴出口
の付近にシリコンが堆積し、数回のエピタキシャル膜成
長作業で忽ち使用不能となることは前述の通りであるが
、上記の分子線発生源を用いるときは、エピタキシャル
膜１μｍの成長を１００回以上行なうことが出来た。As mentioned above, in the conventional apparatus, silicon is deposited on the inner wall of the main body 10 of the molecular beam generation source and near the ejection port, and it becomes unusable immediately after several epitaxial film growth operations. When using a generation source, it was possible to grow an epitaxial film of 1 μm over 100 times.
さらに都合のよいことに、高周波電力の印加を調整する
だけで、膜の成長速度を制御することが可能であり、ま
た、必要に応じ成長を中断させることも可能であった。Furthermore, conveniently, it was possible to control the growth rate of the film simply by adjusting the application of high-frequency power, and it was also possible to interrupt the growth as necessary.
更に、非晶質シリコン膜を堆積する場合は、高周波投入
電力の制御によって、水素の含有率を制御することも可
能であった。Furthermore, when depositing an amorphous silicon film, it was also possible to control the hydrogen content by controlling the high frequency input power.
良質なシリコンエピタキシャル膜を作成するには、シラ
ンの代わりにジクロルシランが用いられ、低い基板温度
においても水素含有の少ない膜を作成することが出来る
。なお、シランと塩素を混合して用いても同様の効果が
得られる。To create a high-quality silicon epitaxial film, dichlorosilane is used instead of silane, and a film with low hydrogen content can be created even at low substrate temperatures. Note that the same effect can be obtained by using a mixture of silane and chlorine.
この分子線発生源を用いる本発明のＭＢＥ装置は、メン
テナンスの期間を大幅に延長することになり、長期間に
亙って装置を大気に開放することなく、不純物の混入の
少ない良質のエピタキシャル膜を生成することが出来た
。しかも、従来のＭＢＥ法の「Ｅガン」を用いる蒸着で
よく発生した、シリコン試料の突沸のような不具合も全
く見られなかった。The MBE apparatus of the present invention using this molecular beam source significantly extends the maintenance period, and can produce high-quality epitaxial films with few impurities, without exposing the apparatus to the atmosphere for a long period of time. was able to generate. Moreover, no defects such as bumping of the silicon sample, which often occur during deposition using an "E gun" in the conventional MBE method, were observed.
さらにまた、高周波電力印加コイル８によって分解され
たシランの反応生成物は、その多くが５ｉ−Ｈの形で存
在するために、基板上での滞在時間が長く、このため、
凹凸の表面を有する基板の上での、被覆性の良い薄膜の
堆積も、充分に可能となった。これは従来、ＭＢＥ法で
は側底不可能とされていたものである。Furthermore, most of the silane reaction products decomposed by the high-frequency power application coil 8 exist in the form of 5i-H, so they stay on the substrate for a long time.
It has also become possible to deposit thin films with good coverage on substrates with uneven surfaces. This was previously thought to be impossible with the MBE method.
上記では高周波電力の周波数として１３．５６ＭＨｚを
用いているが、この周波数はコイルの形状とともに、例
えば４００ｋＨｚ等、自由に選ぶことが出来る。Although 13.56 MHz is used as the frequency of the high-frequency power in the above example, this frequency can be freely selected, for example, 400 kHz, together with the shape of the coil.
この第１図を略示したのが第１図ｇであるが、装置は第
１図すのように、コイルのアース側を逆にしたり、高周
波電力をパルス状に印加する態様にも変更可能である。Figure 1g is a schematic representation of Figure 1, but the device can be modified to reverse the grounding side of the coil or to apply high-frequency power in pulses, as shown in Figure 1. It is.
また電力の印加法であるが、上記のようにコイル即ちＬ
を用いるもののほか、対向電極即ちＣを用いても電力の
印加は可能であって、第１図Ｃにそれを略示する。１６
．１７は中空の円筒状電極である。その極性を変えるこ
とも、また高周波電力をパルス状に印加することも、先
と同様に可能で、これを第１図ｄに示す。In addition, as for the method of applying power, as mentioned above, a coil or L
In addition to using a counter electrode, it is also possible to apply power using a counter electrode, which is schematically shown in FIG. 1C. 16
．． 17 is a hollow cylindrical electrode. It is likewise possible to change its polarity and to apply the high-frequency power in pulses, as shown in FIG. 1d.
第１図ｅは、２つの電極１６．１７を、分子線を挟んで
対向設置した例であり、第１図ｆは、電極の一方が分子
線を円筒状に包み、他方が真空容器で代用されたもの、
第１図ｇは電極の一方が分子線を円筒状に包み、他方が
その央部に置かれた線状電極となったものである。第１
図ｆ２ｇの２者の場合、電源９は直流電源であってもよ
い。Figure 1 e shows an example in which two electrodes 16 and 17 are placed opposite each other with a molecular beam in between, and Figure 1 f shows an example in which one of the electrodes wraps the molecular beam in a cylindrical shape, and the other is replaced by a vacuum container. what was done,
In Fig. 1g, one of the electrodes wraps the molecular beam in a cylindrical shape, and the other is a linear electrode placed in the center. 1st
In the case of the two in figure f2g, the power supply 9 may be a DC power supply.
第１図りは、導波管１８の一部に貫通孔を設けて分子線
を通し、マイクロ波のエネルギーをここで吸収させた例
である。ＧＨｚ帯の周波数などに用いられる。The first diagram is an example in which a through hole is provided in a part of the waveguide 18, a molecular beam is passed through it, and microwave energy is absorbed there. Used for frequencies in the GHz band.
第１図ｇ −ｇの各図に点線で描いたのは、磁場の印加
手段であって、エネルギー印加領域に靜磁界または動磁
界を設定し、これによってプラズマ化を促進し、プラズ
マをより高密度にするための工夫である。磁場は永久磁
石、電磁方何れで作っても良い。What is drawn with dotted lines in each of Figures 1g to 1g is a means for applying a magnetic field, which sets a static magnetic field or a dynamic magnetic field in the energy application region, thereby promoting plasma formation and making the plasma higher. This is a device to increase density. The magnetic field may be created by either a permanent magnet or an electromagnetic method.
なお、上記の分子線エピタキシャル膜生成の実施例はシ
リコン膜の堆積で示したが、他の物質の堆積でも同様な
効果が得られる。Note that although the above embodiment of molecular beam epitaxial film production was shown by depositing a silicon film, similar effects can be obtained by depositing other substances.
また分子線に対するエネルギーの注入は、放射線（放射
光）によっても可能であり、放射線は熱線、可視光線、
紫外線、真空紫外線、Ｘ線等すべてが用途に合わせて用
いられる。すべては、分子線発生源本体１０と基板との
間にて、この分子線を放射線で照射する形で使用される
。Energy can also be injected into molecular beams using radiation (sychrotron radiation), which can be heat rays, visible light,
Ultraviolet rays, vacuum ultraviolet rays, X-rays, etc. are all used depending on the purpose. All of them are used to irradiate this molecular beam with radiation between the molecular beam source main body 10 and the substrate.
＝１２−
さらに、上述は分子線エピタキシ装置の場合であったが
、この分子線発生源は、より真空度の低いＣＶＤ装置、
エツチング装置９表面酸化装置。=12- Furthermore, although the above was a case of a molecular beam epitaxy device, this molecular beam generation source can also be used in a CVD device with a lower degree of vacuum,
Etching device 9 surface oxidation device.
アッシャ−装置などで代表される諸装置の内部にて、粉
体を製造したり、被処理物の表面に薄膜形成、改質、ク
リーニング、エツチング等の加工を施す場合にも便利に
用い得ることは明かである。It can also be conveniently used when manufacturing powder or performing processing such as thin film formation, modification, cleaning, etching, etc. on the surface of the processed object inside various devices such as asher equipment. is clear.
加工を局部的なものに限定出来ることから、また必要以
上に真空容器内を汚染しないことから、殊に純度の高い
粉体や薄膜、そして、界面の変化の切れ味の良い多層薄
膜の製造に威力を発揮する。Since processing can be limited to local areas and the inside of the vacuum container is not contaminated unnecessarily, it is especially effective for producing highly pure powders and thin films, as well as multilayer thin films with sharp interface changes. demonstrate.
必要に応じてこの分子線発生源を機械的に移動させ、被
処理基板表面を所望の分子種、荷電粒子。If necessary, this molecular beam source is mechanically moved to spread the desired molecular species and charged particles onto the surface of the substrate to be processed.
活性種、放射光の少なくとも一部で走査させることがあ
る。The active species may be scanned with at least a portion of the synchrotron radiation.
荷電粒子のみまたは活性種のみを利用したいときには、
電界または磁界によって荷電粒子の進路を変更する手段
が採用され、放射光のみを利用したいときには例えば、
分子流の向かう方向を避けて被処理基板を設置すること
になる。When you want to use only charged particles or active species,
A method of changing the course of charged particles using an electric or magnetic field is adopted, and when it is desired to use only synchrotron radiation, for example,
The substrate to be processed is placed avoiding the direction in which the molecular flow is directed.
−１３＝
（発明の効果）
本発明は、比較的低真空を利用する処理装置では、真空
室内の所定の狭い範囲のみにプラズマを作り、被処理物
の狭い局部に限定するなどして、必要とする処理を施す
ことが出来、また、超高真空を使用する処理装置、例え
ば分子線エピタキシ装置では、真空室の背圧を高くする
おそれなく、高濃度の分子線で高速な薄膜の堆積を可能
にするほか、更には、分子線発生源の構造材料に原料ガ
スの分解生成物が付着するようなことのない装置を提供
することが出来る。−13= (Effects of the Invention) The present invention is capable of generating plasma only in a predetermined narrow range within the vacuum chamber in a processing apparatus that utilizes a relatively low vacuum, thereby limiting it to a narrow local area of the object to be processed. In addition, in processing equipment that uses ultra-high vacuum, such as molecular beam epitaxy equipment, it is possible to deposit thin films at high speed with highly concentrated molecular beams without the risk of increasing the back pressure in the vacuum chamber. In addition, it is possible to provide an apparatus in which decomposition products of the source gas do not adhere to the structural material of the molecular beam generation source.
第１図は、本発明の１実施例のＭＢＥ装置に使用される
分子線発生源の正面断面図。第１図ｇはそれを略示する
図。
第１図す、ｃ、ｄ、ｅ、ｆ、ｇ、ｈはそれぞれ別の実施
例の、第１図ｇ、と同様の図である。
第２図は、従来のＭＢＥ装置に使用される分子線発生源
の正面断面図。
１・・・・・・真空フランジ２・・・・・・ガス導入口
、３・・・・・・ガス排気口、４・・・・・・ガス整流
部、５・・・・・・障壁、６・・・・・・中央孔６．７
・・・・・・噴出口、８・・団・コイル、９・・・・・
・高周波電源、１０・・・・・・分子線発生源の本体、
１４・・・・・・絶縁物、 １５・・・・・・水冷さ
れたバイブ。FIG. 1 is a front sectional view of a molecular beam generation source used in an MBE apparatus according to an embodiment of the present invention. FIG. 1g is a diagram schematically showing this. Figures 1, c, d, e, f, g, and h are views similar to Figure 1g, respectively, of different embodiments. FIG. 2 is a front sectional view of a molecular beam generation source used in a conventional MBE apparatus. 1... Vacuum flange 2... Gas inlet, 3... Gas exhaust port, 4... Gas rectifier, 5... Barrier , 6... Central hole 6.7
・・・・・・Spout, 8・Group・Coil, 9・・・・
・High frequency power supply, 10... Main body of molecular beam generation source,
14...Insulator, 15...Water-cooled vibrator.
Claims (6)
手段と、該高濃度の分子流にエネルギーを注入してこれ
をプラズマ化する手段とを備え、該プラズマ化で生じた
荷電粒子、活性種、放射光等の生成物の少なくとも一部
を用いて、粉体の製造、基板の表面処理等の真空処理を
行なうことを特徴とする真空処理装置。(1) Equipped with means for locally generating a high concentration molecular flow in a high vacuum, and means for injecting energy into the high concentration molecular flow to turn it into plasma, and a charge generated by the plasma formation. 1. A vacuum processing apparatus that performs vacuum processing such as powder production and substrate surface treatment using at least a portion of products such as particles, active species, and synchrotron radiation.
を特徴とする特許請求の範囲第１項記載の真空処理装置
。(2) The vacuum processing apparatus according to claim 1, wherein the energy injection is performed using synchrotron radiation.
特徴とする特許請求の範囲第１項記載の真空処理装置。(3) The vacuum processing apparatus according to claim 1, wherein the energy injection is performed using electric power.
子流の回りに巻回されたコイルに印加される高周波電力
で行なわれることを特徴とする特許請求の範囲第３項記
載の真空処理装置。(4) The vacuum treatment according to claim 3, characterized in that the injection of energy by electric power is performed by high-frequency electric power applied to a coil wound around the high-concentration molecular flow. Device.
子流の近傍に少なくともその一方の電極を配置された一
対の電極に印加される電力で行なわれることを特徴とす
る特許請求の範囲第３項記載の真空処理装置。(5) The injection of energy by electric power is performed by electric power applied to a pair of electrodes, at least one of which is placed near the high concentration molecular flow. The vacuum processing apparatus according to item 3.
子流のエネルギー注入部に設けられた磁界によって加速
されていることを特徴とする特許請求の範囲第４または
５項記載の真空処理装置。(6) The vacuum processing apparatus according to claim 4 or 5, wherein the injection of energy by the electric power is accelerated by a magnetic field provided in the energy injection part of the high concentration molecular flow. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271290A JPS63125684A (en) | 1986-11-14 | 1986-11-14 | Vacuum treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271290A JPS63125684A (en) | 1986-11-14 | 1986-11-14 | Vacuum treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63125684A true JPS63125684A (en) | 1988-05-28 |
| JPH0475775B2 JPH0475775B2 (en) | 1992-12-01 |
Family
ID=17497989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61271290A Granted JPS63125684A (en) | 1986-11-14 | 1986-11-14 | Vacuum treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63125684A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06501629A (en) * | 1990-11-15 | 1994-02-24 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Fire extinguishing compositions and methods |
| JPH0883775A (en) * | 1994-09-14 | 1996-03-26 | Rohm Co Ltd | Method and device for organometal vapor phase epitaxy |
-
1986
- 1986-11-14 JP JP61271290A patent/JPS63125684A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06501629A (en) * | 1990-11-15 | 1994-02-24 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Fire extinguishing compositions and methods |
| JPH0883775A (en) * | 1994-09-14 | 1996-03-26 | Rohm Co Ltd | Method and device for organometal vapor phase epitaxy |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0475775B2 (en) | 1992-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5356672A (en) | Method for microwave plasma assisted supersonic gas jet deposition of thin films | |
| US5256205A (en) | Microwave plasma assisted supersonic gas jet deposition of thin film materials | |
| Alexandrov et al. | Chemical vapor deposition enhanced by atmospheric pressure non‐thermal non‐equilibrium plasmas | |
| US4871581A (en) | Carbon deposition by ECR CVD using a catalytic gas | |
| JPH10121254A (en) | Method for depositing barrier film on three-dimensional article | |
| JPS63195267A (en) | Plastic coated with carbon film | |
| CN107075677A (en) | Gas injection apparatus | |
| JPS62203328A (en) | Plasma cvd apparatus | |
| JPS63125684A (en) | Vacuum treatment device | |
| JP2005036255A (en) | Method and apparatus for producing composite structure | |
| JP2002151507A (en) | Semiconductor element manufacturing method and apparatus thereof | |
| JPH0257476B2 (en) | ||
| RU2792526C1 (en) | Diamond coating device | |
| RU2788258C1 (en) | Gas jet method for deposition of diamond films with activation in microwave discharge plasma | |
| JPS62278284A (en) | Surface treatment device | |
| JP2691399B2 (en) | Plasma processing method | |
| JP4591498B2 (en) | Composite structure manufacturing method | |
| JP2676091B2 (en) | How to make a thin film | |
| JPS63213673A (en) | Microwave plasma thin film forming device | |
| JPS6383271A (en) | Production of diamond-like carbon film | |
| JPS63262457A (en) | Preparation of boron nitride film | |
| JPS6272114A (en) | Radical-beam photo-cvd device | |
| JPH04132684A (en) | Method for forming diamond thin film | |
| JP2995339B2 (en) | How to make a thin film | |
| JPH0676665B2 (en) | Thin film formation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |