JPS6248754B2 - - Google Patents
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- Publication number
- JPS6248754B2 JPS6248754B2 JP60261382A JP26138285A JPS6248754B2 JP S6248754 B2 JPS6248754 B2 JP S6248754B2 JP 60261382 A JP60261382 A JP 60261382A JP 26138285 A JP26138285 A JP 26138285A JP S6248754 B2 JPS6248754 B2 JP S6248754B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon film
- base material
- carbon
- forming
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 34
- 229910052799 carbon Inorganic materials 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 11
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 10
- 229930195733 hydrocarbon Natural products 0.000 claims description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 6
- 125000005842 heteroatom Chemical group 0.000 claims description 5
- 229930192474 thiophene Natural products 0.000 claims description 5
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- -1 nitrogen-containing hydrocarbon Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 20
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000003786 synthesis reaction Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000003575 carbonaceous material Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005087 graphitization Methods 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 229910021469 graphitizable carbon Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- ZFFWIOSEDOAZAY-UHFFFAOYSA-N 2-aminoprop-2-enenitrile Chemical compound NC(=C)C#N ZFFWIOSEDOAZAY-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- JOHCVVJGGSABQY-UHFFFAOYSA-N carbon tetraiodide Chemical compound IC(I)(I)I JOHCVVJGGSABQY-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、優れた導電性を有する易黒鉛化性
炭素膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a graphitizable carbon film having excellent electrical conductivity.
従来、このような易黒鉛化性炭素を得る方法は
いわゆる熱分解法が一般的である。この方法は原
料であるメタン、エタン、プロパン、ベンゼン等
の脂肪族または芳香族炭化水素の雰囲気中で反応
系を高温に加熱することにより炭化水素を熱分解
し、炭素質を生成するものである。（例えば大谷
ら“炭素化工学の基礎“1980 オーム社）生成し
た炭素質の特性は加熱温度に大きく依存し、2000
℃を越える加熱温度でないと良好な炭素質は得ら
れない。（方法１）
上記方法よりも低温（1000℃）で、高周波放電
によりベンゼンのプラズマ重合を行ない、石英板
あるいはシリコンウエハー上に炭素薄膜を得るこ
とも行なわれている（エツチ、マツシマら、ジヤ
ーナルオブアプライドフイジツクス、22巻（５
号）、888（1983））（H.MATSUSHiMA et al J.
APPL.PHYS.Vo1.22（No.５）、888（1983））（方
法２）
〔発明が解決しようとする問題〕
しかしながら上記方法１においては、高価な高
温のエネルギーを多消費するという問題があり、
方法２では得られた炭素質の電導度が低く、生成
速度も低いという問題がある。
Conventionally, a so-called pyrolysis method has been commonly used to obtain such graphitizable carbon. This method thermally decomposes hydrocarbons by heating the reaction system to high temperatures in an atmosphere of aliphatic or aromatic hydrocarbons such as methane, ethane, propane, and benzene, which are raw materials, to generate carbonaceous substances. . (For example, Otani et al. “Fundamentals of Carbonization Engineering” 1980 Ohm Publishing) The properties of the produced carbon depend greatly on the heating temperature,
Good carbon quality cannot be obtained unless the heating temperature exceeds °C. (Method 1) Plasma polymerization of benzene is performed using high-frequency discharge at a lower temperature (1000°C) than the above method, and carbon thin films are also obtained on quartz plates or silicon wafers (Etsuchi, Matsushima et al., Journal of Applied Physics, Volume 22 (5
No.), 888 (1983)) (H.MATSUSHiMA et al J.
APPL.PHYS.Vo1.22 (No. 5), 888 (1983)) (Method 2) [Problem to be solved by the invention] However, in the above method 1, there is a problem that a large amount of expensive high-temperature energy is consumed. can be,
Method 2 has the problem that the electrical conductivity of the obtained carbonaceous material is low and the production rate is also low.
この発明は、上記従来技術の問題点に鑑み、方
法１の様に高価な熱エネルギーを多消費せず、又
方法２から得た炭素質よりも導電性に優れた品位
の高い炭素膜が形成される方法を提供するもので
ある。
In view of the above-mentioned problems of the prior art, this invention does not consume a large amount of expensive thermal energy like Method 1, and forms a high-quality carbon film with better conductivity than the carbon material obtained from Method 2. This method provides a method for
その要旨とするところはヘテロ原子を含有する
炭化水素ガスを原料として、950℃を越える温度
に加熱された基材上にプラズマ放電により炭素膜
を形成させることを特徴とする導電性炭素膜形成
方法にある。 The gist of this method is to form a conductive carbon film using a hydrocarbon gas containing heteroatoms as a raw material and forming a carbon film by plasma discharge on a substrate heated to a temperature exceeding 950°C. It is in.
この発明において原料となるヘテロ原子を含有
する炭化水素としては、例えばメチルアミン、プ
ロピルアミン、アクリロニトリル、アミノアクリ
ロニトリル、プロピルメルカプタン、四塩化炭
素、四沃化炭素、有機ボロン、有機ガリウム、チ
オフエン、ピロール、ピリジン、ピロール、２硫
化炭素等の直鎖状、環状化合物が用いられ、特に
硫黄、窒素を含有する化合物が適しており、アク
リロニトリル、チオフエンはきわめて適してい
る。 Examples of hydrocarbons containing heteroatoms that are raw materials in this invention include methylamine, propylamine, acrylonitrile, aminoacrylonitrile, propylmercaptan, carbon tetrachloride, carbon tetraiodide, organic boron, organic gallium, thiophene, pyrrole, Linear and cyclic compounds such as pyridine, pyrrole and carbon disulfide are used, and compounds containing sulfur and nitrogen are particularly suitable, with acrylonitrile and thiophene being extremely suitable.
プラズマ放電により基板上に炭素膜を形成する
方法は、反応容器中を原料である炭化水素蒸気で
所定の圧力に充満させ、高周波電界を印加するこ
とによつて基材上に炭素膜を形成する。 The method of forming a carbon film on a substrate by plasma discharge involves filling a reaction vessel with raw material hydrocarbon vapor to a predetermined pressure, and forming a carbon film on the substrate by applying a high-frequency electric field. .
この発明において、基材としては、鉄、コバル
ト、ニツケル等の金属、或はステンレス等の合金
からなる板、シート、フイルム、その他の成形品
を使用することができ、フアイバ状のもの及びそ
の織布も使用することができる。また、石英、ガ
ラス、シリコン、セラミツクからなる金属以外の
ものを用いても良い。更にカーボンフアイバ、カ
ーボンシート（例えば、カーボンフアイバ織
布）、グラフアイトフアイバ、グラフアイト板
（例えばHTOPG）を用いることができる。上記
基材のうち特に遷移金属を含む基材が好ましい。 In this invention, plates, sheets, films, and other molded products made of metals such as iron, cobalt, and nickel, or alloys such as stainless steel can be used as the base material, and fiber-like materials and woven materials thereof can be used. Cloth can also be used. Moreover, materials other than metals such as quartz, glass, silicon, and ceramic may be used. Furthermore, carbon fibers, carbon sheets (for example, carbon fiber woven fabric), graphite fibers, graphite plates (for example, HTOPG) can be used. Among the above base materials, base materials containing transition metals are particularly preferred.
基材は、950℃を越える温度に加熱すると、特
に、炭素膜の形成に効果的である。 Heating the substrate to a temperature above 950°C is particularly effective in forming a carbon film.
実施例 １
SUS304からなるシート状の基材（厚み0.2mmを
合成室内に静置して、基材を1000℃に加熱した
後、アクリロニトリル蒸気を合成室内に導入し、
圧力1.0mmHgに保持した。然る後、高周波電界
（13.56MHz出力40W）を印加し、プラズマ反応を
行ない、基材上に金属光沢を有する膜厚20〜22μ
ｍの炭素膜を形成せしめた。
Example 1 A sheet-like base material (thickness 0.2 mm) made of SUS304 was placed in a synthesis chamber, heated to 1000°C, and then acrylonitrile vapor was introduced into the synthesis chamber.
The pressure was maintained at 1.0 mmHg. After that, a high frequency electric field (13.56MHz output 40W) is applied to perform a plasma reaction, resulting in a film with a thickness of 20 to 22μ with metallic luster on the substrate.
A carbon film of m was formed.
得られた炭素膜のグラフアイト層間隔はｄ＝
3.366Åとなりかなりグラフアイト化が進行して
いる事が判つた。 The graphite layer spacing of the obtained carbon film is d=
The value was 3.366 Å, and it was found that graphitization had progressed considerably.
実施例 ２
SUS304からなるシート状の基材（厚み0.2mm）
を合成室内に静置して、基材を1100℃、1050℃及
び1000℃に加熱した後、チオフエン蒸気を合成室
内に導入し、圧力1.0mmHgに保持した。然る後、
高周波電界（13.56MHz出力40W）を印加し、プ
ラズマ反応を行ない、基材上に金属光沢を有する
膜厚20〜22μｍの炭素膜を形成せしめた。Example 2 Sheet-like base material made of SUS304 (thickness 0.2 mm)
was left still in the synthesis chamber and the base material was heated to 1100°C, 1050°C, and 1000°C, then thiophene vapor was introduced into the synthesis chamber and the pressure was maintained at 1.0 mmHg. After that,
A high frequency electric field (13.56 MHz output 40 W) was applied to perform a plasma reaction to form a carbon film with a thickness of 20 to 22 μm with metallic luster on the substrate.
得られた炭素薄膜の電導度は基材温度の高い順
序で、各々1.4×103、800、700S／cmであつた。 The electrical conductivities of the obtained carbon thin films were 1.4×10 3 , 800, and 700 S/cm, respectively, in descending order of substrate temperature.
比較例 １
SUS304からなるシート状の基材（厚み0.2mm）
を合成室内に静置して基材を1000℃に加熱し、ベ
ンゼン蒸気を合成室内に導入し、圧力１mmHgに
保持し、熱分解反応を行なわしめ、基材上に炭素
質を形成せしめた。炭素質の形状は繊維状であつ
た。Comparative example 1 Sheet-like base material made of SUS304 (thickness 0.2 mm)
was allowed to stand still in a synthesis chamber, the substrate was heated to 1000° C., benzene vapor was introduced into the synthesis chamber, the pressure was maintained at 1 mmHg, a thermal decomposition reaction was carried out, and carbonaceous material was formed on the substrate. The shape of the carbonaceous material was fibrous.
得られた炭素質のＸ線回折の結果よりグラフア
イト層間隔はｄ＝3.462Åとなり、グラフアイト
化が進行していない炭素質である事が判つた。 The result of X-ray diffraction of the obtained carbonaceous material showed that the graphite layer spacing was d=3.462 Å, indicating that the carbonaceous material had not undergone graphitization.
比較例 ２
SUS304からなるシート状の基材（厚み0.2mm）
を合成室内に静置して、基材を1000℃に加熱した
後、ベンゼン蒸気を合成室内に導入し、圧力1.0
mmHgに保持した。然る後、高周波電界（13.56M
Hz出力40W）を印加し、プラズマ反応を行ない、
基材上に金属光沢を有する膜厚20〜22μｍの炭素
膜を形成せしめた。Comparative example 2 Sheet-like base material made of SUS304 (thickness 0.2 mm)
was placed in the synthesis chamber and the base material was heated to 1000℃, then benzene vapor was introduced into the synthesis chamber and the pressure was increased to 1.0.
Maintained at mmHg. After that, high frequency electric field (13.56M
Hz output 40W) to perform a plasma reaction,
A carbon film having a thickness of 20 to 22 μm and having metallic luster was formed on the base material.
得られた炭素膜のグラフアイト層間隔はｄ＝
3.442Åとなり、わずかにグラフアイト化がすす
んでいる事が判つた。 The graphite layer spacing of the obtained carbon film is d=
It became 3.442 Å, indicating that graphitization had progressed slightly.
比較例 ３
SUS304からなるシート状の基材（厚み0.2mm）
を合成室内に静置して、基材を1100℃に加熱した
後、ベンゼン蒸気を合成室内に導入し、圧力1.0
mmHgに保持した。然る後、高周波電界（13.56M
Hz出力40W）を印加し、プラズマ反応を行ない、
基材上に膜厚20〜22μｍの炭素膜を形成せしめ
た。Comparative example 3 Sheet-like base material made of SUS304 (thickness 0.2 mm)
was placed in the synthesis chamber and the base material was heated to 1100℃, then benzene vapor was introduced into the synthesis chamber and the pressure was increased to 1.0.
Maintained at mmHg. After that, high frequency electric field (13.56M
Hz output 40W) to perform a plasma reaction,
A carbon film having a thickness of 20 to 22 μm was formed on the base material.
得られた炭素膜の電導度は600S／cmであつ
た。 The electrical conductivity of the obtained carbon film was 600 S/cm.
比較例 ４
SUS304からなるシート状の基材（厚み0.2mm）
を合成室内に静置して、基材を950℃に加熱した
後、チオフエン蒸気を合成室内に導入し、圧力
1.0mmHgに保持した。然る後、高周波電界
（13.56MHz出力40W）を印加し、プラズマ反応を
行ない、基材上に膜厚20〜22μｍの炭素膜を形成
せしめた。Comparative example 4 Sheet-like base material made of SUS304 (thickness 0.2 mm)
was placed in the synthesis chamber and the base material was heated to 950℃, then thiophene vapor was introduced into the synthesis chamber and the pressure was increased.
It was maintained at 1.0 mmHg. Thereafter, a high frequency electric field (13.56 MHz output 40 W) was applied to perform a plasma reaction, and a carbon film with a thickness of 20 to 22 μm was formed on the base material.
得られた炭素薄膜の電導度は300S／cmであつ
た。 The electrical conductivity of the obtained carbon thin film was 300 S/cm.
比較例 ５
シリコンからなる基材（厚み0.2mm）を合成室
内に静帯して、基材を1100℃に加熱した後、ベン
ゼン蒸気を合成室内に導入し、圧力1.0mmHgに保
持した。然る後、高周波電界（13.56MHz出力
40W）を印加し、プラズマ反応を行ない、基材上
に膜厚20〜22μｍの炭素膜を形成せしめた。Comparative Example 5 A base material made of silicon (thickness: 0.2 mm) was placed in a synthesis chamber, and after heating the base material to 1100° C., benzene vapor was introduced into the synthesis chamber and the pressure was maintained at 1.0 mmHg. After that, high frequency electric field (13.56MHz output
40 W) was applied to perform a plasma reaction to form a carbon film with a thickness of 20 to 22 μm on the substrate.
得られた炭素膜の電導度は300S／cmであつ
た。 The electrical conductivity of the obtained carbon film was 300 S/cm.
この発明によつて提案されたヘテロ原子を含有
する炭化水素を原料として、プラズマCVDにて
炭素膜を合成する方法によつて、これまでより低
温で高品位な炭素質を得ることが出来る。
By the method proposed by this invention of synthesizing a carbon film by plasma CVD using a hydrocarbon containing a heteroatom as a raw material, it is possible to obtain high-quality carbon at a lower temperature than ever before.
Claims (1)
950℃を越える温度に加熱された基材上にプラズ
マ放電により炭素膜を形成させることを特徴とす
る導電性炭素膜の形成方法。 ２ ヘテロ原子を含有する炭化水素が、硫黄ある
いは窒素を含有する炭化水素であることを特徴と
する特許請求の範囲第１項記載の導電性炭素膜の
形成方法。 ３ 硫黄あるいは窒素を含有する炭化水素が、チ
オフエンあるいはアクリロニトリルであることを
特徴とする特許請求の範囲第２項記載の導電性炭
素膜の形成方法。 ４ 基材が、遷移金属を含むことを特徴とする特
許請求の範囲第１項、第２項または第３項記載の
導電性炭素膜の形成方法。[Claims] 1. Using a hydrocarbon containing a heteroatom as a raw material
A method for forming a conductive carbon film, which comprises forming a carbon film by plasma discharge on a substrate heated to a temperature exceeding 950°C. 2. The method for forming a conductive carbon film according to claim 1, wherein the heteroatom-containing hydrocarbon is a sulfur- or nitrogen-containing hydrocarbon. 3. The method for forming a conductive carbon film according to claim 2, wherein the hydrocarbon containing sulfur or nitrogen is thiophene or acrylonitrile. 4. The method for forming a conductive carbon film according to claim 1, 2 or 3, wherein the base material contains a transition metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60261382A JPS62124272A (en) | 1985-11-22 | 1985-11-22 | Formation of electrically conductive carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60261382A JPS62124272A (en) | 1985-11-22 | 1985-11-22 | Formation of electrically conductive carbon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62124272A JPS62124272A (en) | 1987-06-05 |
| JPS6248754B2 true JPS6248754B2 (en) | 1987-10-15 |
Family
ID=17361070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60261382A Granted JPS62124272A (en) | 1985-11-22 | 1985-11-22 | Formation of electrically conductive carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62124272A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6455542U (en) * | 1987-09-30 | 1989-04-06 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63293164A (en) * | 1987-05-27 | 1988-11-30 | Agency Of Ind Science & Technol | Manufacture of carbon material |
-
1985
- 1985-11-22 JP JP60261382A patent/JPS62124272A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6455542U (en) * | 1987-09-30 | 1989-04-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62124272A (en) | 1987-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |