JPS62226621A - Forming method for single crystal silicon thin film - Google Patents
Forming method for single crystal silicon thin filmInfo
- Publication number
- JPS62226621A JPS62226621A JP6855486A JP6855486A JPS62226621A JP S62226621 A JPS62226621 A JP S62226621A JP 6855486 A JP6855486 A JP 6855486A JP 6855486 A JP6855486 A JP 6855486A JP S62226621 A JPS62226621 A JP S62226621A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- thin film
- substrate
- silicon thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 title claims description 25
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体装置を製造する分野で利用される単結晶
シリコン薄膜の形成方法に関し、更に詳細には非晶質下
地上に形成した多結晶あるいは非晶質等の非単結晶シリ
コン薄膜を単結晶化する方法の改良に関するものである
。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a method for forming a single crystal silicon thin film used in the field of manufacturing semiconductor devices, and more specifically relates to a method for forming a single crystal silicon thin film formed on an amorphous substrate. Alternatively, the present invention relates to an improvement in a method for making a non-single crystalline silicon thin film, such as an amorphous one, into a single crystal.
〈従来の技術〉
従来より、高速集積回路や三次元集積回路の実現のため
に、シリコン基板上に絶縁膜を介して多結晶あるいは非
晶質等の非単結晶シリコンを堆積し、この非単結晶シリ
コン薄膜にエネルギービームを照射して溶融再結晶化さ
せることにより単結晶シリコン薄膜を形成する、いわゆ
る５ｏｌ（５ｉｌｉｃｏｎ Ｏｎ Ｉｎ５ｕｌａｔｏｒ
）技術の研究、開発が活発に行なわれている。<Conventional technology> Conventionally, in order to realize high-speed integrated circuits and three-dimensional integrated circuits, non-monocrystalline silicon such as polycrystalline or amorphous silicon is deposited on a silicon substrate with an insulating film interposed therebetween. The so-called 5ol (5ilicon on in5ulator) forms a single crystal silicon thin film by irradiating the crystalline silicon thin film with an energy beam to melt and recrystallize it.
) Technology research and development is being actively conducted.
このようなＳＯＩ技術において、８０１層に作製する素
子が均一な特性を示すためには、その結晶方位が制御さ
れていることが重要である。このため、絶縁膜の一部に
開口部（シード部）を設けてシリコン基板の一部を露出
させ、この露出部分において、シリコン基板と単結晶化
すべき非単結晶シリコン薄膜とを接触させ、基板を種結
晶として用い、開口部（シード部）において、基板と同
じ方位を有する結晶を引き上げ、それを絶縁膜上で横方
向に連続して成長させるようにした方法が提案されてい
る。In such SOI technology, it is important that the crystal orientation be controlled in order for the element manufactured in the 801 layer to exhibit uniform characteristics. For this purpose, an opening (seed part) is provided in a part of the insulating film to expose a part of the silicon substrate, and in this exposed part, the silicon substrate and the non-single crystal silicon thin film to be made into a single crystal are brought into contact with each other. A method has been proposed in which a crystal having the same orientation as the substrate is pulled up in an opening (seed part) using a crystal as a seed crystal, and the crystal is grown continuously in the lateral direction on an insulating film.
〈発明が解決しようとする問題点〉
本発明は、上記の点に鑑みて創案されたものであり、方
位の制御された均一な単結晶シリコン層を得ることが出
来る単結晶シリコン薄膜形成方法を提供することを目的
としている。<Problems to be Solved by the Invention> The present invention has been devised in view of the above points, and provides a method for forming a single crystal silicon thin film that can obtain a uniform single crystal silicon layer with a controlled orientation. is intended to provide.
く問題点を解決するための手段〉
上記の目的を達成するため、本発明は、（ｌｏｏ）結晶
面シリコン基板上にシリコン酸化膜を形成し、このシリ
コン酸化膜の一部に開口シード部を設けて多結晶あるい
は非晶質等の非単結晶シリコン薄膜を積層し、この非単
結晶シリコン薄膜にエネルギービームを照射して溶融再
結晶させることにより、単結晶シリコン薄膜を形成する
方法において、結晶を＜１００＞方向に成長させるよう
に構成している。Means for Solving the Problems> In order to achieve the above object, the present invention forms a silicon oxide film on a (loo) crystal plane silicon substrate, and forms an opening seed portion in a part of the silicon oxide film. A method of forming a single crystalline silicon thin film by laminating polycrystalline or amorphous non-monocrystalline silicon thin films, and melting and recrystallizing the non-single crystalline silicon thin films by irradiating the non-single crystalline silicon thin films with an energy beam. is configured to grow in the <100> direction.
即ち、上記した従来の５０１層の結晶方位のずれについ
て種々検討した結果、結晶を成長させる方向によって結
晶方位のずれが生じる度合いが異なることが判明し、最
も成長しやすい面内方位に結晶成長させることによって
、結晶方位のずれを無くシ、安定な結晶成長を行なうよ
うにしたもの”で、（１００）面のシリコン基板を用い
、（１００＞方向に結晶を成長させることにより、最も
安定な結晶成長が行なわれ、均一なＳＯＩ層が得られる
ことを見出した。That is, as a result of various studies on the deviation of the crystal orientation of the conventional 501 layer described above, it was found that the degree of deviation of the crystal orientation differs depending on the direction in which the crystal is grown, and the crystal is grown in the in-plane direction that is easiest to grow. By using a silicon substrate with a (100) plane, by growing the crystal in the (100> direction, the most stable crystal can be obtained.) It was found that the growth was successful and a uniform SOI layer was obtained.
〈実施例〉
以下、図面を参照して、本発明の一実施例を詳細に説明
する。<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図（ａ）乃至（ｅ）は本発明の一実施例を説明する
ための工程図である。FIGS. 1(a) to 1(e) are process diagrams for explaining one embodiment of the present invention.
本発明を実施するに際しては、基板として（００１）面
の単結晶シリコン基板Ｉを用い、まず第１図（ａ）に示
す（００１）単結晶シリコン基板！上に第２図（ｂ）に
示すようにシリコン酸化膜２を形成し、次に第１図Ｃｃ
）に示すようにシリコン酸化膜２の一部に開口部（シー
ド部）３を設けて単結晶シリコン基板Ｉを一部露出（露
出部分１ａ）させる。次に第１図（ｄ）に示すように単
結晶シリコン基板ｌの露出部分１ａ及びシリコン酸化膜
２の上部に活性層となる非単結晶シリコン薄膜４を形成
し、エネルギービーム照射による加熱５を第１図（ｅ）
に示すように非単結晶シリコン膜３が単結晶シリコン基
板ｌの露出部分１ａに直接液した領域から走査方向８に
行ない、基板ｌの露出部分１ａを種として非単結晶シリ
コン薄膜３を溶融再結晶化して単結晶シリコン領域７を
得ると共に、この単結晶シリコン領域７を種として活性
層となる非単結晶シリコン薄膜４を溶融再結晶化して単
結晶化シリコン薄膜６を得る。When carrying out the present invention, a (001) single-crystal silicon substrate I is used as a substrate, and first the (001) single-crystal silicon substrate shown in FIG. 1(a)! A silicon oxide film 2 is formed thereon as shown in FIG. 2(b), and then a silicon oxide film 2 is formed as shown in FIG.
), an opening (seed portion) 3 is provided in a portion of the silicon oxide film 2 to expose a portion of the single crystal silicon substrate I (exposed portion 1a). Next, as shown in FIG. 1(d), a non-single-crystal silicon thin film 4 that will become an active layer is formed on the exposed portion 1a of the single-crystal silicon substrate l and on the silicon oxide film 2, and heated 5 by energy beam irradiation. Figure 1(e)
As shown in FIG. 3, the non-monocrystalline silicon thin film 3 is melted and re-melted using the exposed portion 1a of the substrate 1 as a seed in the scanning direction 8 from the area where the non-monocrystalline silicon film 3 is directly applied to the exposed portion 1a of the single-crystalline silicon substrate 1. A single crystal silicon region 7 is obtained by crystallization, and a non-single crystal silicon thin film 4 which becomes an active layer is melted and recrystallized using this single crystal silicon region 7 as a seed to obtain a single crystal silicon thin film 6.
このとき、非単結晶シリコン薄膜４を溶融再結晶化させ
る際、第２図（ａ）及び（ｂ）に示すように（＋００）
の方向に結晶成長させるように走査方向８を方向付ける
。At this time, when melting and recrystallizing the non-single crystal silicon thin film 4, as shown in FIGS. 2(a) and (b), (+00)
The scanning direction 8 is oriented so that the crystal grows in the direction of .
）なお、第２図（ａ）及び（ｂ）において、２０は線状
の”を示している。) In FIGS. 2(a) and 2(b), 20 indicates a linear "".
このように非単結晶シリコン薄膜４の単結晶化を〔〒０
０〕方向に結晶成長させることにより、最も安定な結晶
成長が行なわれ、比較的長い距離にわたって、単結晶シ
リコン基板ｌと結晶方位の一致した単結晶化シリコン薄
膜６を得る。In this way, the non-single crystal silicon thin film 4 is made into a single crystal by [〒0
By growing the crystal in the 0] direction, the most stable crystal growth is achieved, and a single crystal silicon thin film 6 whose crystal orientation matches that of the single crystal silicon substrate 1 over a relatively long distance is obtained.
なお、比較のため（＋ ｉｏ）方向に結晶成長させた場
合、シード部８から離れるにしたがって結晶方位のずれ
が大きくなり、例えばシード部３から約５００μｍで乱
れが生じ、安定な結晶成長が行なわれなくなった。For comparison, when the crystal is grown in the (+io) direction, the deviation in crystal orientation increases as the distance from the seed part 8 increases, and for example, disturbance occurs at about 500 μm from the seed part 3, and stable crystal growth is not performed. No longer.
また、上記した実施例において、〔１００〕方向と等価
な［１００］、［０〒Ｏ〕、（０１０）の方向に結晶成
長させた場合にも、同様に安定した結晶成長が得られた
。Furthermore, in the above examples, stable crystal growth was similarly obtained when crystal growth was performed in the [100], [0〒O], and (010) directions, which are equivalent to the [100] direction.
更に、シリコン基板ｌとして（００１）面と等価な面（
１００）、（０１０）等を有するものを用い結晶成長の
方向をその面内において、結晶成長の方向〔了００１と
対称性から等価な〔０〒０〕。Furthermore, as a silicon substrate l, a plane equivalent to the (001) plane (
100), (010), etc., and the crystal growth direction is [0〒0] which is equivalent to the crystal growth direction [001] in the plane thereof.
〔００〒〕等の方向に結晶成長させた場合にも、同様に
安定な結晶成長が得られた。Similarly, stable crystal growth was also obtained when the crystal was grown in a direction such as [00〒].
本発明は、上記の実施例に限定されるものではなく、単
結晶化方法としては複層溶融構造等、どのようなものを
用いても良く、またエネルギービームはレーザ、電子線
、ハロゲンランプ等、いずれのものを用いても良い。The present invention is not limited to the above-described embodiments, and any single crystallization method may be used, such as a multilayer melt structure, and the energy beam may be a laser, an electron beam, a halogen lamp, etc. , any one may be used.
〈発明の効果〉
以上のように、本発明によれば、結晶方向の制御された
均一な５０１層を形成することが出来、その結果高性能
の半導体集積回路を提供することが出来る。<Effects of the Invention> As described above, according to the present invention, a uniform 501 layer with a controlled crystal direction can be formed, and as a result, a high-performance semiconductor integrated circuit can be provided.
第１図（ａ）乃至（ｅ）はそれぞれ本発明の一実施例を
説明するための試料断面を示す工程図、第２図（ａ）及
び（ｂ）はそれぞれ１１本発明の一実施例の結晶成長方
向を説明するための図である。
！・・・（００１）間車結晶シリコン基板、Ｉａ・・・
露出部分、２・・・シリコン酸化膜、３・・・開口部（
シード部）、４・・・活性層となる非単結晶７リコン薄
膜、５・・・エネルギービーム照射、６・・・単結晶化
されたシリコン薄膜、８・・・走査方向、２０・・・線
状のシード部、２Ｉ・・・点状のシード部、２３・・・
〔〒００〕結晶成長方向。
特許出願人 工業技術院長 等々力 達（ａ）
（ｄ）
第１図
（ａ）
囚
第２図FIGS. 1(a) to (e) are process diagrams each showing a cross section of a sample for explaining an embodiment of the present invention, and FIGS. FIG. 3 is a diagram for explaining crystal growth directions. ! ...(001) Interval wheel crystal silicon substrate, Ia...
Exposed portion, 2... silicon oxide film, 3... opening (
seed part), 4... Non-single-crystal silicon thin film serving as an active layer, 5... Energy beam irradiation, 6... Single-crystal silicon thin film, 8... Scanning direction, 20... Linear seed portion, 2I... Dotted seed portion, 23...
[〒00] Crystal growth direction. Patent applicant: Director of the Agency of Industrial Science and Technology Tatsu Todoroki (a) (d) Figure 1 (a) Figure 2
Claims (1)
を形成する工程と、 該形成したシリコン酸化膜の一部に開口部を設けて上記
シリコン基板の一部を露出させる工程と、 上記開口部の設けられたシリコン酸化膜上に活性層とな
る非単結晶シリコン薄膜を積層する工程と、 上記非単結晶シリコン薄膜にエネルギービームを照射し
て上記シリコン基板露出部を種として上記非単結晶シリ
コン薄膜を＜１００＞方向に溶融再結晶化成長させる工
程と を含んでなることを特徴とする単結晶シリコン薄膜形成
方法。[Claims] 1. A step of forming a silicon oxide film on a {100} crystal plane silicon substrate, and forming an opening in a part of the formed silicon oxide film to expose a part of the silicon substrate. a step of laminating a non-monocrystalline silicon thin film to serve as an active layer on the silicon oxide film provided with the opening; and a step of irradiating the non-monocrystalline silicon thin film with an energy beam to seed the exposed portion of the silicon substrate. A method for forming a single-crystal silicon thin film, comprising the step of melting and recrystallizing the non-single-crystal silicon thin film in the <100> direction.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6855486A JPS62226621A (en) | 1986-03-28 | 1986-03-28 | Forming method for single crystal silicon thin film |
| DE8686117799T DE3685732T2 (en) | 1985-12-20 | 1986-12-19 | METHOD FOR PRODUCING A MONOCRISTALLINE THIN LAYER. |
| US06/943,428 US4801351A (en) | 1985-12-20 | 1986-12-19 | Method of manufacturing monocrystalline thin-film |
| EP86117799A EP0227076B1 (en) | 1985-12-20 | 1986-12-19 | Method of manufacturing monocrystal thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6855486A JPS62226621A (en) | 1986-03-28 | 1986-03-28 | Forming method for single crystal silicon thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62226621A true JPS62226621A (en) | 1987-10-05 |
Family
ID=13377094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6855486A Pending JPS62226621A (en) | 1985-12-20 | 1986-03-28 | Forming method for single crystal silicon thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62226621A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009231712A (en) * | 2008-03-25 | 2009-10-08 | Sumitomo Heavy Ind Ltd | Laser beam machining method and semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167011A (en) * | 1983-02-01 | 1984-09-20 | Mitsubishi Electric Corp | Semiconductor wafer |
-
1986
- 1986-03-28 JP JP6855486A patent/JPS62226621A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167011A (en) * | 1983-02-01 | 1984-09-20 | Mitsubishi Electric Corp | Semiconductor wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009231712A (en) * | 2008-03-25 | 2009-10-08 | Sumitomo Heavy Ind Ltd | Laser beam machining method and semiconductor device |
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