JPS62194606A - Thin film dielectric material - Google Patents
Thin film dielectric materialInfo
- Publication number
- JPS62194606A JPS62194606A JP3639686A JP3639686A JPS62194606A JP S62194606 A JPS62194606 A JP S62194606A JP 3639686 A JP3639686 A JP 3639686A JP 3639686 A JP3639686 A JP 3639686A JP S62194606 A JPS62194606 A JP S62194606A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- organic polymer
- film
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 62
- 239000003989 dielectric material Substances 0.000 title claims description 15
- 229920000620 organic polymer Polymers 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 60
- 238000010292 electrical insulation Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011104 metalized film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910000464 lead oxide Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- 229920001225 polyester resin Polymers 0.000 description 3
- 239000004645 polyester resin Substances 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、フィルムコンデンサの構成に関するものであ
り、フィルムコンデンサの小型・軽量化及び高性能化を
目的とする。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to the structure of a film capacitor, and aims to reduce the size and weight of the film capacitor and improve its performance.
（従来の技術）（発明が解決しようとする問題点）機器
の小型・軽量化志向、高集積回路の採用による電子回路
の高密度化あるいは自動挿入の普及などに伴い電子部品
に対する小型化の要請がますます強くなってきている。(Prior art) (Problem to be solved by the invention) There is a demand for miniaturization of electronic components due to the trend toward smaller and lighter equipment, higher density of electronic circuits due to the adoption of highly integrated circuits, and the spread of automatic insertion. is becoming stronger and stronger.
その中にあってフィルムコンデンサも同様に小型化へと
種々の開発が試みられている。コンデンサの静電容量は
、誘電体の誘電率と電極面積に比例し厚さに反比例する
。Among these, various attempts have been made to develop film capacitors to make them smaller. The capacitance of a capacitor is proportional to the dielectric constant and electrode area, and inversely proportional to the thickness.
したがって従来のフィルムコンデンサの小型化をはかる
場合には、誘電体材料として使用するフィルムの誘電率
を大きくするか又は厚さを薄くすることにより単位電極
面積当たりの静電容量を大きくすることが要求される。Therefore, in order to downsize conventional film capacitors, it is necessary to increase the capacitance per unit electrode area by increasing the dielectric constant or decreasing the thickness of the film used as the dielectric material. be done.
一般にフィルムコンデンサの誘電体材料としては、ポリ
エチレンテレフタレート、ポリプロピレン、ポリスチレ
ン、ポリカーボネートなどからなる高分子フィルムが使
用されている。これらの高分子フィルムの厚さは４〜６
μｍが普通であるが。Generally, polymer films made of polyethylene terephthalate, polypropylene, polystyrene, polycarbonate, etc. are used as dielectric materials for film capacitors. The thickness of these polymer films is 4-6
μm is normal.
近年市場要請により、２〜３μｍの厚さのポリエチレン
テレフタレートのフィルムも製品化されている。しかし
ながら２〜３μｍの厚さのフィルムを工業的規模で生産
する場合、そのフィルムの薄さからくる多くの技術的問
題点がでてくる。たとえば、しわの発生を防止しつつ厚
み精度の高いフイルムを歩留りよく製造するには、原料
ポリマーの精製、溶融成型、加熱延伸、製造ラインの建
屋内置囲気あるいは、その防塵などに高度の管理が必要
となる。したがって厚さが薄いフィルムを安価に量産す
るのは、非常に難しく、そのため工業的には、フィルム
の厚みは、２μｍ程度が限界と考えられている。In recent years, due to market demand, polyethylene terephthalate films with a thickness of 2 to 3 μm have been commercialized. However, when producing films with a thickness of 2 to 3 μm on an industrial scale, many technical problems arise due to the thinness of the films. For example, in order to produce a film with high thickness accuracy and high yield while preventing the occurrence of wrinkles, sophisticated control is required for the purification of raw polymers, melt molding, heating and stretching, and the air conditioning and dustproofing of production line buildings. becomes. Therefore, it is very difficult to mass-produce thin films at low cost, and therefore, industrially, it is considered that the limit for film thickness is about 2 μm.
フィルムコンデンサの小型・軽量化の手段として、特開
昭５９−１２７８２８号には、耐熱性プラスチックフィ
ルムの両面上に、互いに異なる端部を残して蒸着金属電
極を形成し、一方の面には熱硬化性樹脂層、他方の面に
は１体熱性熱可塑性樹脂層を形成し、これら構成最小単
位を積層したチップ状フィルムコンデンサが提案されて
いる。As a means of reducing the size and weight of film capacitors, Japanese Patent Application Laid-Open No. 127828/1983 discloses that vapor-deposited metal electrodes are formed on both sides of a heat-resistant plastic film, leaving different ends, and one side is coated with heat-deposited metal electrodes. A chip-shaped film capacitor has been proposed in which a curable resin layer is formed, and a thermal thermoplastic resin layer is formed on the other side, and these minimum structural units are laminated.
このフィルムコンデンサの誘電体層は、耐熱性プラスチ
ックフィルムと熱硬化性樹脂層および耐熱性熱可塑性樹
脂層とであり、この両者が回路上並列結合された構成と
なっており、従来のフィルムコンデンサと比較すれば、
静電容量が数倍になった。しかしながら新たに追加され
た誘電体層が有機樹脂層からなるため大きな誘電率が期
待できないので、フィルムコンデンサの小型・軽量化へ
の要請に対しては、不十分なものとなっている。The dielectric layer of this film capacitor is composed of a heat-resistant plastic film, a thermosetting resin layer, and a heat-resistant thermoplastic resin layer, and these two are connected in parallel on the circuit, which makes them different from conventional film capacitors. If you compare,
The capacitance has increased several times. However, since the newly added dielectric layer is made of an organic resin layer, a large dielectric constant cannot be expected, and this is insufficient to meet the demands for smaller and lighter film capacitors.
また、ガラス基板上に、Ａｌを下部電極として蒸着し、
その上に薄膜誘電体層、さらにその上にＡｆを上部電極
として蒸着した薄膜誘電体材料が提案されている。In addition, Al was vapor-deposited as a lower electrode on the glass substrate,
A thin film dielectric material has been proposed in which a thin film dielectric layer is deposited thereon, and Af is further deposited thereon as an upper electrode.
しかしこの薄膜誘電体材料の場合、薄膜誘電体の膜厚が
０．３〜１．０μｍという薄膜であるためピンホールや
網目状亀裂など電気的弱点部が発生し易く、電気絶縁抵
抗が小さいという欠点があった。However, in the case of this thin film dielectric material, the film thickness of the thin film dielectric is 0.3 to 1.0 μm, so electrical weak points such as pinholes and network cracks are likely to occur, and the electrical insulation resistance is low. There were drawbacks.
また上部電極は、膜厚が０．０５μｍ程度のアルミニウ
ムの蒸着膜であるので局部的絶縁破壊に際し、上部電極
が瞬時に周辺部のみ飛散しコンデンサとしての機能を保
持する自己回復作用を有しており、この効果を使って薄
膜誘電体を形成した初期の絶縁抵抗の悪さをある程度改
良することが可能である。反面実際のコンデンサ性能と
しては。In addition, the upper electrode is a vapor-deposited aluminum film with a thickness of about 0.05 μm, so in the event of local dielectric breakdown, the upper electrode instantly scatters only at the periphery and has a self-healing effect that maintains its function as a capacitor. By using this effect, it is possible to improve to some extent the poor insulation resistance of the thin film dielectric material initially formed. On the other hand, in terms of actual capacitor performance.
電圧印加時において直流漏洩電流が大きく、誘電損失が
大きいという欠点を有している。It has the drawbacks of large DC leakage current and large dielectric loss when voltage is applied.
（問題点を解決するための手段）
本発明者らは、前記の薄膜誘電体材料の欠点を解消する
ために、鋭意研究を進めた結果、薄膜誘電体層の両側に
、有機高分子薄膜層を設けることにより、電気絶縁抵抗
、電気絶縁耐力が大きく改良されることを見出し１歩留
り率の向上を果たし。(Means for Solving the Problems) In order to eliminate the drawbacks of the above-mentioned thin film dielectric materials, the present inventors have conducted intensive research and found that an organic polymer thin film layer is added on both sides of the thin film dielectric layer. We found that electrical insulation resistance and electrical dielectric strength can be greatly improved by providing 1. The yield rate has been improved.
本発明に到達したのである。以下に、第１図を参照して
１本発明を具体的に説明する。すなわち本発明は有機高
分子フィルムを支持体基板（１）とし。The present invention has been achieved. The present invention will be specifically explained below with reference to FIG. That is, in the present invention, an organic polymer film is used as the support substrate (1).
ソノ少すくとも一方の面に下部電極としての導電性金属
層（２）、有機高分子薄膜層（３）、薄膜誘電体層（４
）有機高分子薄膜層（５）及び上部電極としての導電性
金属層（６）を順次積層してなるコンデンサ用薄膜誘電
体材料である。A conductive metal layer (2) as a lower electrode, an organic polymer thin film layer (3), and a thin film dielectric layer (4
) A thin film dielectric material for a capacitor, which is formed by sequentially laminating an organic polymer thin film layer (5) and a conductive metal layer (6) as an upper electrode.
薄膜誘電体層は、硫化亜鉛、酸化鉛、酸化珪素などがあ
げられ、その膜厚は、０．３〜１μｍの範囲であり、形
成法としては、塗布法、コート法。The thin film dielectric layer is made of zinc sulfide, lead oxide, silicon oxide, etc., and has a thickness in the range of 0.3 to 1 μm, and can be formed by a coating method or a coating method.
気相成長法等がある。ただし膜厚が、０．３μｍ以下で
は、十分な電気絶縁抵抗が得られず膜厚が１μｍ以上で
は、膜自身の亀裂を生じ９歩留り率の低下を招く。気相
生長法には、スパッタリング法。There are vapor phase growth methods, etc. However, if the film thickness is 0.3 μm or less, sufficient electrical insulation resistance cannot be obtained, and if the film thickness is 1 μm or more, the film itself will crack, resulting in a decrease in yield rate. Sputtering method is a vapor phase growth method.
イオンブレーティング法、真空蒸着法、ＣＶＤ法等があ
る。有機高分子薄膜相は、 ＩＫＨｚで測定した誘電
正接が、１％以下であり、膜厚０．１〜０．７μｍの範
囲である熱可塑正樹脂、熱硬化性樹脂および両者の混合
物である。ただし膜厚が０．１μｍ以下では、十分な電
気絶縁抵抗が得られず、膜厚が ０．７μｍ以上では、
断面積あたり、大きな静電容量が得られないので実用的
ではない。たとえば、熱可塑正樹脂としては、ポリスチ
レン、ポリエチレン、ポリアミド、ポリエステル等があ
げられ、熱硬化性樹脂としては、尿素樹脂、メラミン樹
脂、フェノール樹脂、エポキシ樹脂、不飽和ポリエステ
ル、アルキド樹脂、ウレタン樹脂、ポリイミド樹脂、ポ
リアミドイミド樹脂等があげられる。薄膜誘電体層の両
側をはさみこむ有機高分子薄膜層の組み合せは、同じ樹
脂でも、異なる樹脂でもどちらでもよ（、特に制限され
ることはない。Examples include ion blating method, vacuum evaporation method, and CVD method. The organic polymer thin film phase is a thermoplastic resin, a thermosetting resin, or a mixture thereof, with a dielectric loss tangent measured at IKHz of 1% or less and a film thickness in the range of 0.1 to 0.7 μm. However, if the film thickness is 0.1 μm or less, sufficient electrical insulation resistance cannot be obtained, and if the film thickness is 0.7 μm or more,
It is not practical because a large capacitance cannot be obtained per cross-sectional area. For example, thermoplastic resins include polystyrene, polyethylene, polyamide, polyester, etc., and thermosetting resins include urea resin, melamine resin, phenol resin, epoxy resin, unsaturated polyester, alkyd resin, urethane resin, Examples include polyimide resin and polyamideimide resin. The combination of organic polymer thin film layers sandwiching both sides of the thin film dielectric layer may be made of the same resin or different resins (but is not particularly limited).
有機高分子薄膜は、バーコード法、印刷法等あるいは真
空装置を用いた気相生長法により形成される。この有機
高分子薄膜層を下部電極として金属化フィルム層の上に
形成することにより、薄膜誘電体層と、下部電極との付
着強度を大きく増加させ１歩留り率の向上を果し、電気
絶縁抵抗が大きく改良された。下部電極としての金属化
フィルム上に、直接、薄膜誘電体層を形成した場合、付
着力の大きいものが得られず、水分の影響によって下部
電極からの剥離が起こる。また薄膜誘電体層自身が、低
温プラズマで形成された場合、薄膜誘電体の物理的、化
学的な歪のため部分的に、亀裂を生ずることがある。し
かしながら、下部電極としての金属化フィルム層と、薄
膜誘電体層との間に、有機高分子薄膜層を形成すること
により１両者の付着力を一挙に増加することが可能とな
った。The organic polymer thin film is formed by a barcode method, a printing method, or the like, or a vapor phase growth method using a vacuum device. By forming this organic polymer thin film layer as the lower electrode on the metallized film layer, the adhesion strength between the thin film dielectric layer and the lower electrode is greatly increased, the yield rate is improved, and the electrical insulation resistance has been greatly improved. If a thin film dielectric layer is formed directly on the metallized film serving as the lower electrode, a strong adhesive layer cannot be obtained, and peeling from the lower electrode occurs due to the influence of moisture. Further, when the thin film dielectric layer itself is formed using low-temperature plasma, cracks may occur partially due to physical and chemical distortion of the thin film dielectric. However, by forming an organic polymer thin film layer between the metallized film layer serving as the lower electrode and the thin film dielectric layer, it has become possible to increase the adhesion between the two at once.
さらに薄膜誘電体層の両側に有機高分子薄膜層を形成す
ることにより、有機高分子薄膜層が、一種の衝撃吸収層
の役割を果たすため、薄膜誘電体層の亀裂発生を抑える
ことが可能となった。また薄膜誘電体層の電気的弱点部
を補強する絶縁層としても働き、電気絶縁抵抗、電気絶
縁耐力の増加および歩留り率の向上を果たした。Furthermore, by forming organic polymer thin film layers on both sides of the thin film dielectric layer, the organic polymer thin film layer acts as a kind of shock absorption layer, making it possible to suppress the occurrence of cracks in the thin film dielectric layer. became. It also acts as an insulating layer to reinforce electrical weak points in the thin film dielectric layer, increasing electrical insulation resistance, electrical dielectric strength, and yield rate.
よって本発明によって得られた薄膜誘電体材料は、従来
のフィルムコンデンサの数倍の静電容量が得られ、金属
化フィルムコンデンサの小型化を可能ならしめることは
、明らかである。Therefore, it is clear that the thin film dielectric material obtained according to the present invention provides a capacitance several times that of conventional film capacitors, and makes it possible to miniaturize metallized film capacitors.
（実施例）
以下に実施例を示して本発明を第１図を参照して具体的
に説明する。(Example) The present invention will be specifically explained below with reference to FIG. 1 by showing an example.
実施例１〜７
支持体基板（１）として、フィルム厚１２μｍのポリエ
ステルフィルムを用い、これをアセトン中で超音波洗浄
を行った後、ボンバード処理（流量比ＨＡｒ ： Ｏｘ
＝１０：３ ＋真空度； ４ Ｘｌ０−”Ｔｏｒｒ）
を行った。下部電極（２）は、Ａｆをポリエステルフィ
ルム基板上に真空蒸着を行った。その上に、有機高分子
薄膜層を形成するため、フェノキシ樹脂（ＰＫＨＨ，ユ
ニオンカーバイド） 〔実施例１〕、ポリエステル（バ
イロン２００．東洋紡）〔実施例２〕。Examples 1 to 7 A polyester film with a film thickness of 12 μm was used as the support substrate (1), and after performing ultrasonic cleaning in acetone, it was subjected to bombardment treatment (flow rate ratio HAr:Ox
=10:3 + degree of vacuum; 4 Xl0-”Torr)
I did it. For the lower electrode (2), Af was vacuum deposited on a polyester film substrate. In order to form an organic polymer thin film layer thereon, phenoxy resin (PKHH, Union Carbide) [Example 1] and polyester (Vylon 200. Toyobo) [Example 2] were used.
ポリカーボネート（Ｓ ２０００Ｆ、三菱瓦斯化学）〔
実施例３〕、ポリメチルメタアクリレート（試薬グレー
ド石津製薬）〔実施例４〕、ポリスチレン（ＣＰ−１，
電気化学）〔実施例５〕、ポリウレタン樹脂（クリスボ
ンＮＴ−１５０．大日本インキ化学工業）〔実施例６〕
、ボリアリレート（Ｕ−ポリマー、ユニチカ）〔実施例
７〕、を１０％（重量％）に希釈したものを、バーコー
ド法により。Polycarbonate (S 2000F, Mitsubishi Gas Chemical) [
Example 3], polymethyl methacrylate (reagent grade Ishizu Pharmaceutical) [Example 4], polystyrene (CP-1,
Electrochemistry) [Example 5], Polyurethane resin (Crisbon NT-150. Dainippon Ink & Chemicals) [Example 6]
, polyarylate (U-polymer, Unitika) [Example 7] was diluted to 10% (wt%) by the barcode method.
０．３μｍの有機高分子薄膜層（３）を形成した。つい
でこの有機高分子薄膜層の上に、硫化亜鉛薄膜誘電体層
（４）を非蒸着部分を形成するためのマスクを行い、Ｒ
Ｆビイオンブレーティング法より形成した。A 0.3 μm organic polymer thin film layer (3) was formed. Next, a zinc sulfide thin film dielectric layer (4) is masked on top of this organic polymer thin film layer to form non-evaporated areas, and R
It was formed by F bioion blating method.
すなわちアルゴンをペルジャー内に導入し、真空度７
Ｘ １０−’ Ｔｏｒｒに保ち、電圧２ ＫＶ、周波数
１３．５６ＭＨｚの高周波電界を１０〇−印加しながら
、電子銃により、硫化亜鉛蒸発母材を加熱蒸発させ。That is, argon is introduced into the Pelger and the vacuum level is 7.
The zinc sulfide evaporation base material was heated and evaporated with an electron gun while maintaining the temperature at X 10-' Torr and applying a high-frequency electric field of 2 KV voltage and 13.56 MHz frequency.
０．５μｍ形成した。ただし蒸発母材は、純度９９．９
９％の微粉末をプレス成型し、８００℃で６時間真空焼
結を行ったものを用いた。A thickness of 0.5 μm was formed. However, the purity of the evaporated base material is 99.9.
A 9% fine powder was press-molded and vacuum sintered at 800° C. for 6 hours.
さらに薄膜誘電体層の上に、有機高分子薄膜層（５）を
、前述の有機高分子薄膜Ｎ（３）と、同様の方法で作成
した。その有機高分子薄膜層の上に非蒸着部分を形成す
るため、マスクを行い、上部電極（６）としてＡｌを真
空蒸着した。得られた薄膜コンデンサの静電容量（Ｉ
ＭＥＩｚで測定）、電気絶縁抵抗（３０ｖで測定）およ
び歩留り率を測定した。その結果を表１に示す。ただし
比較例１として誘電体層が硫化亜鉛単体のもの、比較例
２として、誘電体層が、ポリエステル樹脂を２回コート
したものも付記した。歩留り率は、サンプル１００点を
作成し。Further, on the thin film dielectric layer, an organic polymer thin film layer (5) was formed in the same manner as the above-mentioned organic polymer thin film N (3). In order to form a non-evaporated portion on the organic polymer thin film layer, a mask was applied and Al was vacuum-deposited as an upper electrode (6). The capacitance (I
MEIz), electrical insulation resistance (measured at 30V) and yield rate were measured. The results are shown in Table 1. However, as Comparative Example 1, the dielectric layer was made of zinc sulfide alone, and as Comparative Example 2, the dielectric layer was coated twice with polyester resin. For the yield rate, 100 samples were created.
その内で電気絶縁抵抗が５Ｘ１０’Ω以上のものを百分
率で表したものである。表１より明らかなように、有機
高分子薄膜層を形成することにより。Among them, those having an electrical insulation resistance of 5×10'Ω or more are expressed as a percentage. As is clear from Table 1, by forming an organic polymer thin film layer.
電気絶縁抵抗の２桁以上の増加、および歩留り率の大幅
な増加が可能となったのである。This made it possible to increase the electrical insulation resistance by more than two orders of magnitude and to significantly increase the yield rate.
表 １
実施例８〜１４
実施例１〜７と同様の樹脂を用い、有機高分子薄膜層（
３）、酸化鉛薄膜誘電体層（４）およ°び有機高分子薄
膜層（５）を順次積層した。Table 1 Examples 8 to 14 Using the same resin as Examples 1 to 7, an organic polymer thin film layer (
3) A lead oxide thin film dielectric layer (4) and an organic polymer thin film layer (5) were sequentially laminated.
ただし、蒸発母材は、純度９９．９９％の微粉末をプレ
ス成型し、６時間真空焼結を行ったものを用いた。形成
法は、実施例１〜１０と同様である。However, the evaporation base material used was one obtained by press-molding fine powder with a purity of 99.99% and performing vacuum sintering for 6 hours. The forming method is the same as in Examples 1-10.
ただし比較例３として誘電体層が、酸化鉛単体のもの、
比較例４として、誘電体層が、ポリエステル樹脂単体の
ものも付記した表２からも明らかなように、有機高分子
薄膜層を形成することにより。However, as Comparative Example 3, the dielectric layer was composed of lead oxide alone;
As Comparative Example 4, the dielectric layer was formed by forming an organic polymer thin film layer, as is clear from Table 2, which also includes a dielectric layer made of a simple polyester resin.
電気絶縁抵抗の２桁以上の増加および歩留り率の大幅な
増加が可能となったのである。This made it possible to increase the electrical insulation resistance by more than two orders of magnitude and to significantly increase the yield rate.
表 ２
実施例１５〜２１
実施例１〜７と同様の樹脂を用い、有機高分子薄膜層（
３）、酸化珪素薄膜誘電体層（４）、および有機高分子
薄膜層（５）を順次積層した。Table 2 Examples 15-21 Using the same resin as Examples 1-7, an organic polymer thin film layer (
3), a silicon oxide thin film dielectric layer (4), and an organic polymer thin film layer (5) were sequentially laminated.
ただし蒸発母材は、純度９９．９９％の微粉末をプレス
成型し、８００℃で６時間真空焼結を行ったものを用い
た。形成法は、実施例１〜７と同様である。ただし、比
較例５として、誘電体層が、酸化珪素単体のもの、比較
例６として、誘電体層が。However, the evaporation base material used was one obtained by press-molding fine powder with a purity of 99.99% and performing vacuum sintering at 800° C. for 6 hours. The formation method is the same as in Examples 1-7. However, in Comparative Example 5, the dielectric layer was made of simple silicon oxide, and in Comparative Example 6, the dielectric layer was made of simple silicon oxide.
ポリエステル樹脂単体のものも付記した。表３からも明
らかなように、有機高分子薄膜層を形成することにより
、電気絶縁抵抗の２桁以上の増加および歩留り率の大幅
な増加が可能となったのである。Also listed is a single polyester resin. As is clear from Table 3, by forming the organic polymer thin film layer, it was possible to increase the electrical insulation resistance by more than two orders of magnitude and to significantly increase the yield rate.
表 ３ （発明の効果） 本発明によれば９次の効果を得ることができる。Table 3 (Effect of the invention) According to the present invention, the ninth-order effect can be obtained.
（１）従来の金属化フィルムコンデンサと比較して。(1) Compared to traditional metallized film capacitors.
大幅に小型化することができる。It can be significantly downsized.
（２）従来の薄膜コンデンサと比較しても電気絶縁抵抗
の大きい、誘電正接の小さなコンデンサを製造できる。(2) Capacitors with higher electrical insulation resistance and lower dielectric loss tangent than conventional thin film capacitors can be manufactured.
有機高分子薄膜層を形成することにより、物理的に不安
定である薄膜誘電体を安定なものとして誘電正接の減少
、電気絶縁抵抗１歩留り率の向上を果した。本発明によ
り、製造された薄膜誘電体材料は、従来のフィルムコン
デンサの誘電体材料である金属化フィルムに比べて製造
加工工程上の取扱いは、はとんど変わらず、コンデンサ
用の全く新規な優れた薄膜誘電体材料が提供できる。By forming an organic polymer thin film layer, the physically unstable thin film dielectric material was made stable, reducing the dielectric loss tangent and improving the yield rate of electrical insulation resistance. The thin film dielectric material produced according to the present invention is a completely new material for capacitors, with almost no change in handling during the manufacturing process compared to metallized films, which are dielectric materials for conventional film capacitors. An excellent thin film dielectric material can be provided.
第１図は１本発明のコンデンサ用薄膜誘電体材料を模式
的に示したものである。
ｌ： 有機高分子フィルム基板
２： 下部電極
３： 有機高分子薄膜層
４： 薄膜誘電体層
５： 有機高分子薄膜層
６： 上部電極FIG. 1 schematically shows a thin film dielectric material for capacitors according to the present invention. l: Organic polymer film substrate 2: Lower electrode 3: Organic polymer thin film layer 4: Thin film dielectric layer 5: Organic polymer thin film layer 6: Upper electrode
Claims (1)
も一方の面に、下部電極としての導電性金属層、有機高
分子薄膜層、薄膜誘電体層、有機高分子薄膜層及び上部
電極としての導電性金属層を順次積層してなるコンデン
サ用薄膜誘電体材料。An organic polymer film is used as a support substrate, and at least one surface thereof is provided with a conductive metal layer as a lower electrode, an organic polymer thin film layer, a thin film dielectric layer, an organic polymer thin film layer, and a conductive metal as an upper electrode. A thin film dielectric material for capacitors made of sequentially laminated layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3639686A JPS62194606A (en) | 1986-02-20 | 1986-02-20 | Thin film dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3639686A JPS62194606A (en) | 1986-02-20 | 1986-02-20 | Thin film dielectric material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62194606A true JPS62194606A (en) | 1987-08-27 |
Family
ID=12468691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3639686A Pending JPS62194606A (en) | 1986-02-20 | 1986-02-20 | Thin film dielectric material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62194606A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6212057B1 (en) | 1998-12-22 | 2001-04-03 | Matsushita Electric Industrial Co., Ltd. | Flexible thin film capacitor having an adhesive film |
-
1986
- 1986-02-20 JP JP3639686A patent/JPS62194606A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6212057B1 (en) | 1998-12-22 | 2001-04-03 | Matsushita Electric Industrial Co., Ltd. | Flexible thin film capacitor having an adhesive film |
| US6974547B1 (en) | 1998-12-22 | 2005-12-13 | Matsushita Electric Industrial Co., Ltd. | Flexible thin film capacitor and method for producing the same |
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