JPS61182049U - - Google Patents
Info
- Publication number
- JPS61182049U JPS61182049U JP6584585U JP6584585U JPS61182049U JP S61182049 U JPS61182049 U JP S61182049U JP 6584585 U JP6584585 U JP 6584585U JP 6584585 U JP6584585 U JP 6584585U JP S61182049 U JPS61182049 U JP S61182049U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- guard ring
- conductivity type
- recess
- diffusion depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の一実施例によるシヨツトキー
バリアーダイオードの断面図、第２図は従来の技
術によるシヨツトキーバリアーダイオードの断面
図である。
１……高濃度Ｎ型シリコン基板、２……低濃度
Ｎ型エピタキシアル層、３……Ｐ型ガードリング
層、４……シリコン酸化膜、５……シヨツトキー
電極、６……凹部、１２……裏面電極。
FIG. 1 is a sectional view of a shot key barrier diode according to an embodiment of the present invention, and FIG. 2 is a sectional view of a shot key barrier diode according to the prior art. DESCRIPTION OF SYMBOLS 1...High concentration N type silicon substrate, 2...Low concentration N type epitaxial layer, 3...P type guard ring layer, 4...Silicon oxide film, 5...Shot key electrode, 6...Recessed portion, 12... ...Back electrode.
Claims (1)
面に形成された他の導電型のガードリングと、該
ガードリングで囲まれた前記半導体基板表面に前
記ガ―ドリングの拡散深さを越えない範囲で形成
された凹部と、該凹部内の前記半導体基板表面に
形成されたシヨツトキー電極とを有する事を特徴
とするシヨツトキーバリアーダイオード。 A semiconductor substrate of one conductivity type, a guard ring of another conductivity type formed on one surface of the semiconductor substrate, and a diffusion depth of the semiconductor substrate surrounded by the guard ring that does not exceed the diffusion depth of the guard ring. 1. A Schottky barrier diode comprising: a recess formed in an area; and a Schottky electrode formed on the surface of the semiconductor substrate within the recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6584585U JPS61182049U (en) | 1985-05-02 | 1985-05-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6584585U JPS61182049U (en) | 1985-05-02 | 1985-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61182049U true JPS61182049U (en) | 1986-11-13 |
Family
ID=30598198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6584585U Pending JPS61182049U (en) | 1985-05-02 | 1985-05-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61182049U (en) |
-
1985
- 1985-05-02 JP JP6584585U patent/JPS61182049U/ja active Pending
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