JPS61500756A - アミノ基でブロックされたポリイソシアネートを基礎とする架橋剤を含有する陰極析出可能な水性分散液の製法 - Google Patents

アミノ基でブロックされたポリイソシアネートを基礎とする架橋剤を含有する陰極析出可能な水性分散液の製法

Info

Publication number: JPS61500756A
Authority: JP; Japan
Prior art keywords: nickel; layer; coating; plating; silicon
Prior art date: 1983-12-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP85500715A

Other languages

English (en)

Japanese (ja)

Inventor

ヤテス，ダグラス・エイ

Original Assignee

モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-12-19

Filing date

1984-12-14

Publication date

1986-04-17

1984-12-13 Priority claimed from US06/681,003 external-priority patent/US4609565A/en

1984-12-14 Application filed by モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション filed Critical モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション

1986-04-17 Publication of JPS61500756A publication Critical patent/JPS61500756A/ja

Status Pending legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims description 74
230000008569 process Effects 0.000 title claims description 33
125000003277 amino group Chemical group 0.000 title 1
239000003431 cross linking reagent Substances 0.000 title 1
239000006185 dispersion Substances 0.000 title 1
229920001228 polyisocyanate Polymers 0.000 title 1
239000005056 polyisocyanate Substances 0.000 title 1
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 114
239000010410 layer Substances 0.000 claims description 56
229910052759 nickel Inorganic materials 0.000 claims description 56
239000000758 substrate Substances 0.000 claims description 44
238000007747 plating Methods 0.000 claims description 41
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
229910052710 silicon Inorganic materials 0.000 claims description 38
239000010703 silicon Substances 0.000 claims description 38
229910052751 metal Inorganic materials 0.000 claims description 26
239000002184 metal Substances 0.000 claims description 26
238000004519 manufacturing process Methods 0.000 claims description 18
238000000576 coating method Methods 0.000 claims description 14
239000002344 surface layer Substances 0.000 claims description 13
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
229910052782 aluminium Inorganic materials 0.000 claims description 10
238000010884 ion-beam technique Methods 0.000 claims description 10
FMQXRRZIHURSLR-UHFFFAOYSA-N dioxido(oxo)silane;nickel(2+) Chemical compound [Ni+2].[O-][Si]([O-])=O FMQXRRZIHURSLR-UHFFFAOYSA-N 0.000 claims description 9
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
229910052802 copper Inorganic materials 0.000 claims description 8
239000010949 copper Substances 0.000 claims description 8
238000001465 metallisation Methods 0.000 claims description 8
238000005245 sintering Methods 0.000 claims description 8
GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 7
238000010438 heat treatment Methods 0.000 claims description 6
150000002739 metals Chemical class 0.000 claims description 5
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
238000009713 electroplating Methods 0.000 claims description 3
-1 fluoride ions Chemical class 0.000 claims description 3
229910017052 cobalt Inorganic materials 0.000 claims description 2
239000010941 cobalt Substances 0.000 claims description 2
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
229910052763 palladium Inorganic materials 0.000 claims description 2
229910052697 platinum Inorganic materials 0.000 claims description 2
229910052703 rhodium Inorganic materials 0.000 claims description 2
239000010948 rhodium Substances 0.000 claims description 2
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
239000011248 coating agent Substances 0.000 claims 13
239000004065 semiconductor Substances 0.000 claims 3
239000004020 conductor Substances 0.000 claims 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
229910052737 gold Inorganic materials 0.000 claims 1
239000010931 gold Substances 0.000 claims 1
239000002356 single layer Substances 0.000 claims 1
238000002161 passivation Methods 0.000 description 33
229910052739 hydrogen Inorganic materials 0.000 description 24
239000001257 hydrogen Substances 0.000 description 23
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 22
238000007654 immersion Methods 0.000 description 9
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
150000002500 ions Chemical class 0.000 description 6
239000000463 material Substances 0.000 description 6
238000005231 Edge Defined Film Fed Growth Methods 0.000 description 5
238000005530 etching Methods 0.000 description 5
229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
238000012545 processing Methods 0.000 description 5
239000006117 anti-reflective coating Substances 0.000 description 4
239000010953 base metal Substances 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 4
229910002804 graphite Inorganic materials 0.000 description 4
239000010439 graphite Substances 0.000 description 4
230000000873 masking effect Effects 0.000 description 4
238000013508 migration Methods 0.000 description 4
229910021332 silicide Inorganic materials 0.000 description 4
239000000126 substance Substances 0.000 description 4
239000012190 activator Substances 0.000 description 3
229910052799 carbon Inorganic materials 0.000 description 3
238000000151 deposition Methods 0.000 description 3
238000009792 diffusion process Methods 0.000 description 3
230000005012 migration Effects 0.000 description 3
229910000838 Al alloy Inorganic materials 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
239000000853 adhesive Substances 0.000 description 2
230000001070 adhesive effect Effects 0.000 description 2
230000004888 barrier function Effects 0.000 description 2
239000000969 carrier Substances 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
239000003638 chemical reducing agent Substances 0.000 description 2
230000007547 defect Effects 0.000 description 2
230000008021 deposition Effects 0.000 description 2
230000005684 electric field Effects 0.000 description 2
238000007772 electroless plating Methods 0.000 description 2
229930195733 hydrocarbon Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
229920001296 polysiloxane Polymers 0.000 description 2
238000005215 recombination Methods 0.000 description 2
230000006798 recombination Effects 0.000 description 2
150000003839 salts Chemical class 0.000 description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
235000012431 wafers Nutrition 0.000 description 2
DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
241001385733 Aesculus indica Species 0.000 description 1
229910005883 NiSi Inorganic materials 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
240000004808 Saccharomyces cerevisiae Species 0.000 description 1
NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 1
230000009471 action Effects 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
238000005275 alloying Methods 0.000 description 1
WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000004907 flux Effects 0.000 description 1
FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
230000008595 infiltration Effects 0.000 description 1
238000001764 infiltration Methods 0.000 description 1
238000005304 joining Methods 0.000 description 1
238000003754 machining Methods 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
235000012054 meals Nutrition 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
150000002815 nickel Chemical class 0.000 description 1
PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
150000002894 organic compounds Chemical class 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
238000005240 physical vapour deposition Methods 0.000 description 1
CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
230000002265 prevention Effects 0.000 description 1
238000007639 printing Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
210000002784 stomach Anatomy 0.000 description 1
238000013517 stratification Methods 0.000 description 1
229940116411 terpineol Drugs 0.000 description 1
230000009466 transformation Effects 0.000 description 1
238000004506 ultrasonic cleaning Methods 0.000 description 1
238000012795 verification Methods 0.000 description 1
239000012855 volatile organic compound Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Life Sciences & Earth Sciences (AREA)
Sustainable Energy (AREA)
Sustainable Development (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Photovoltaic Devices (AREA)
Electrodes Of Semiconductors (AREA)
Electroplating Methods And Accessories (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP85500715A 1983-12-19 1984-12-14 アミノ基でブロックされたポリイソシアネートを基礎とする架橋剤を含有する陰極析出可能な水性分散液の製法 Pending JPS61500756A (ja)

Applications Claiming Priority (7)

Application Number	Priority Date	Filing Date	Title
US56306183A	1983-12-19	1983-12-19
US65927984A	1984-10-10	1984-10-10
US659279		1984-10-10
US681003		1984-12-13
US563061		1984-12-13
US06/681,003 US4609565A (en)	1984-10-10	1984-12-13	Method of fabricating solar cells
PCT/US1984/002065 WO1985002939A1 (en)	1983-12-19	1984-12-14	Method of fabricating solar cells

Publications (1)

Publication Number	Publication Date
JPS61500756A true JPS61500756A (ja)	1986-04-17

Family

ID=27415903

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP85500715A Pending JPS61500756A (ja)	1983-12-19	1984-12-14	アミノ基でブロックされたポリイソシアネートを基礎とする架橋剤を含有する陰極析出可能な水性分散液の製法

Country Status (9)

Country	Link
EP (1)	EP0167589A4 (sv)
JP (1)	JPS61500756A (sv)
AU (1)	AU574761B2 (sv)
CH (1)	CH669476A5 (sv)
DE (1)	DE3490612T1 (sv)
GB (1)	GB2162996B (sv)
NL (1)	NL8420338A (sv)
SE (1)	SE456624B (sv)
WO (1)	WO1985002939A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO1985002942A1 (en) *	1983-12-19	1985-07-04	Mobil Solar Energy Corporation	Method of fabricating solar cells
US4650695A (en) *	1985-05-13	1987-03-17	Mobil Solar Energy Corporation	Method of fabricating solar cells
NL2009382C2 (en)	2012-08-29	2014-03-18	M4Si B V	Method for manufacturing a solar cell and solar cell obtained therewith.

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4004044A (en) *	1975-05-09	1977-01-18	International Business Machines Corporation	Method for forming patterned films utilizing a transparent lift-off mask
US4347264A (en) *	1975-09-18	1982-08-31	Solarex Corporation	Method of applying contacts to a silicon wafer and product formed thereby
US4152824A (en) *	1977-12-30	1979-05-08	Mobil Tyco Solar Energy Corporation	Manufacture of solar cells
US4214966A (en) *	1979-03-20	1980-07-29	Bell Telephone Laboratories, Incorporated	Process useful in the fabrication of articles with metallized surfaces
US4224084A (en) *	1979-04-16	1980-09-23	Rca Corporation	Method and structure for passivating a semiconductor device
US4289381A (en) *	1979-07-02	1981-09-15	Hughes Aircraft Company	High selectivity thin film polarizer
US4261762A (en) *	1979-09-14	1981-04-14	Eaton Corporation	Method for conducting heat to or from an article being treated under vacuum
JPS6059994B2 (ja) *	1979-10-09	1985-12-27	三菱電機株式会社	アルミニウム膜またはアルミニウム合金膜の微細パタ−ン形成方法
US4343830A (en) *	1980-11-13	1982-08-10	Motorola, Inc.	Method for improving the efficiency of solar cells having imperfections
JPS5821324A (ja) *	1981-07-30	1983-02-08	Agency Of Ind Science & Technol	水素添加した半導体薄膜成長用金属表面基板の前処理方法
NL8420337A (nl) *	1983-12-19	1985-11-01	Mobil Solar Energy Corp	Werkwijze voor het vervaardigen van zonnecellen.
WO1985002942A1 (en) *	1983-12-19	1985-07-04	Mobil Solar Energy Corporation	Method of fabricating solar cells

1984
- 1984-12-14 AU AU38886/85A patent/AU574761B2/en not_active Ceased
- 1984-12-14 EP EP19850900535 patent/EP0167589A4/en not_active Withdrawn
- 1984-12-14 DE DE19843490612 patent/DE3490612T1/de not_active Withdrawn
- 1984-12-14 GB GB08515901A patent/GB2162996B/en not_active Expired
- 1984-12-14 NL NL8420338A patent/NL8420338A/nl unknown
- 1984-12-14 JP JP85500715A patent/JPS61500756A/ja active Pending
- 1984-12-14 WO PCT/US1984/002065 patent/WO1985002939A1/en not_active Application Discontinuation
1985
- 1985-08-16 SE SE8503833A patent/SE456624B/sv not_active IP Right Cessation
- 1985-12-14 CH CH3598/85A patent/CH669476A5/de not_active IP Right Cessation

Also Published As

Publication number	Publication date
SE8503833D0 (sv)	1985-08-16
EP0167589A1 (en)	1986-01-15
GB2162996B (en)	1987-08-12
SE456624B (sv)	1988-10-17
AU574761B2 (en)	1988-07-14
SE8503833L (sv)	1985-08-16
WO1985002939A1 (en)	1985-07-04
NL8420338A (nl)	1985-11-01
DE3490612T1 (de)	1985-11-28
AU3888685A (en)	1985-07-12
GB2162996A (en)	1986-02-12
EP0167589A4 (en)	1989-01-19
CH669476A5 (sv)	1989-03-15
GB8515901D0 (en)	1985-07-24

Publication	Publication Date	Title
US4557037A (en)	1985-12-10	Method of fabricating solar cells
US4612698A (en)	1986-09-23	Method of fabricating solar cells
US4321283A (en)	1982-03-23	Nickel plating method
US4609565A (en)	1986-09-02	Method of fabricating solar cells
JPH0520914B2 (sv)	1993-03-22
WO1995012898A1 (en)	1995-05-11	High efficiency silicon solar cells and methods of fabrication
CN110004472A (zh)	2019-07-12	在太阳能电池上形成接触结构的方法
EP0935296A3 (en)	2005-10-26	Method of forming thin zinc oxide film, and method of producing semiconductor element substrate and photovoltaic element using thin zinc oxide film
JPH0572114B2 (sv)	1993-10-08
KR960001468B1 (ko)	1996-01-30	반사 방지막을 갖는 태양 전지의 제조방법
JPS61500756A (ja)	1986-04-17	アミノ基でブロックされたポリイソシアネートを基礎とする架橋剤を含有する陰極析出可能な水性分散液の製法
EP0069992A2 (en)	1983-01-19	Photovoltaic cells having contacts and method of applying same
US4650695A (en)	1987-03-17	Method of fabricating solar cells
AU573696B2 (en)	1988-06-16	Ion milling
AU574431B2 (en)	1988-07-07	Proton milling as a form of plating mask
JPS61500757A (ja)	1986-04-17	太陽電池の製造方法
RU2065227C1 (ru)	1996-08-10	Омический контакт к кремниеву солнечному элементу
JPH023310B2 (sv)	1990-01-23
JPS61500755A (ja)	1986-04-17	太陽電池の製造方法
GB2107741A (en)	1983-05-05	Electroless plating of nickel onto silicon
JPS5975681A (ja)	1984-04-28	太陽電池の電極形成法
Iles et al.	1979	Development of low cost contacts to silicon solar cells. Semi-annual report, 15 Octobr 1978--31 May 1979
JPS58100465A (ja)	1983-06-15	太陽電池の電極形成法
KR870000768A (ko)	1987-02-20	태양전지의 제조방법
TW201034225A (en)	2010-09-16	Method of fabricating a solar cell