JPS6130665A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS6130665A JPS6130665A JP15106584A JP15106584A JPS6130665A JP S6130665 A JPS6130665 A JP S6130665A JP 15106584 A JP15106584 A JP 15106584A JP 15106584 A JP15106584 A JP 15106584A JP S6130665 A JPS6130665 A JP S6130665A
- Authority
- JP
- Japan
- Prior art keywords
- electric arc
- target
- arc
- sputtering
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体装置の製造等に使用するスノ（ツタ装置
に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a vine device used for manufacturing semiconductor devices.
（従来技術とその問題点）
スパッタ装置には高速化・低温化が望まれ、この方向で
スパッタ技術が進展してきている。高速化のためにスパ
ッタ装置のターゲットは、負の高電圧が印加されるがこ
の高電圧印加状態で長時間の連続運転を行なりと、真空
室内に設けられたターゲット近傍で電弧を発生し正常な
運転が出来なくなることがある。電弧の発生はターゲッ
トの材質あるいは形状によって相違し、たとえばターゲ
ットが銅の場合は殆んど電弧を発生しないが、ターゲッ
トがアルミニウムの場合には頻繁に電弧を発生する。こ
の電弧現象は、ターゲット上に発生した鋭い突起と高密
度のプラズマの作用によって生ずるものと考えられる。(Prior art and its problems) Sputtering equipment is desired to have higher speed and lower temperature, and sputtering technology is progressing in this direction. In order to increase the speed, a high negative voltage is applied to the target of the sputtering equipment, but if the target is operated continuously for a long time with this high voltage applied, an electric arc will be generated near the target installed in the vacuum chamber, causing normal operation. You may become unable to drive properly. The generation of electric arcs differs depending on the material or shape of the target; for example, when the target is copper, electric arcs are hardly generated, but when the target is aluminum, electric arcs are frequently generated. This electric arc phenomenon is thought to be caused by the action of sharp protrusions generated on the target and high-density plasma.
この電弧は、ターゲットから異常なスパッタリングを起
し、薄膜を形成する基板上に不正規な膜を作ってしまう
。又、場合によっては基板上の膜を壊してしまうことも
ある。この電弧の発生をなくすことは、技術的に非常に
困難であるが、しかし電弧が発生した時にすばやくμｓ
ｅｃのオーダーで消弧できるならば被膜への影響を防ぐ
ことができ、ることか確認されている。This electric arc causes abnormal sputtering from the target, creating an irregular film on the substrate on which the thin film is to be formed. Furthermore, in some cases, the film on the substrate may be damaged. It is technically very difficult to eliminate the occurrence of this electric arc, but when an electric arc occurs, it is possible to quickly
It has been confirmed that if the arc can be extinguished on the order of ec, the effect on the coating can be prevented.
この電弧を消弧する従来の簡単な装置には第８図（ａ）
の如きものがあり、接地した真空容器１とターゲット２
との間に第８図（ｂ）の電圧を印加し、的に零に落ちる
電圧で消弧されるものである。A conventional simple device for extinguishing this electric arc is shown in Fig. 8(a).
There is a grounded vacuum vessel 1 and target 2.
The voltage shown in FIG. 8(b) is applied between the two, and the arc is extinguished when the voltage drops to zero.
この装置は例えば商用周波数を単に整流しただけのもの
を印加電圧とすることで、比較的容易に実施することが
できる。しかし、この様な脈流電流でスパッターリング
して基板３上に得られる処長いものになる欠点がある。This device can be implemented relatively easily, for example, by simply rectifying a commercial frequency as the applied voltage. However, there is a drawback that sputtering with such a pulsating current results in a long surface being obtained on the substrate 3.
第９図には従来の別の装置を示す。これは電源部６に制
御回路４と検出回路５をそなえ、検出回路５で電弧の発
生を検出し、その信号を制御回路４に伝えて、ここで電
源電圧を一時的に切って強制的に消弧する方法をとる装
置である。しかし、スパッタ電源は一般に出力容量が１
＆Ｗ〜数１０に５Ｆであって非常に大きく、この電力を
電弧の発生の検出信号で短時間に制御することは非常に
難かしい。高速な制御でも消弧までの時間はｍ ｓｅｅ
オーダーになってしまい、充分な解決策とはなっていな
い。又回路構成が非常に複雑で装置は高価になり扱い難
い装置になってしまう欠点がある。FIG. 9 shows another conventional device. The power supply section 6 is equipped with a control circuit 4 and a detection circuit 5, the detection circuit 5 detects the occurrence of an electric arc, and transmits the signal to the control circuit 4, where the power supply voltage is temporarily cut off and forced to operate. This is a device that uses a method to extinguish the arc. However, sputter power supplies generally have an output capacity of 1
&W ~ 5F, which is extremely large, and it is very difficult to control this power in a short time using a detection signal for the occurrence of an electric arc. Even with high-speed control, the time until arc extinction is m see
It becomes a custom order and is not a sufficient solution. Another disadvantage is that the circuit configuration is very complicated, making the device expensive and difficult to handle.
（発明の目的）
本発明は、簡単な経済的な装置でμｓｅｃ乃至低値のｍ
５ｅｃのオーダーの迅速さで電弧をその発生の瞬間に消
弧することのできるスパッタ装置の提供を目的とする。(Objective of the Invention) The present invention provides a simple and economical device for achieving low msec.
The purpose of the present invention is to provide a sputtering device capable of extinguishing an electric arc at the moment of its generation with a speed on the order of 5 ec.
（発明の構成）
本発明は、ターゲットに直流電圧および直流電力を供給
している電源の出力部に、インダクタンスとコンデンサ
を接続し、かつ、該真空室内に電弧が発生したときに、
この電弧の低い負荷抵抗と前記インダクタンスとコンデ
ンサと電源の内部抵抗との回路Ｋｍ気的な自由振動を発
生せしめ、この自由振動に基いてターゲットに発生する
短時間の電圧降下または逆極性電圧によって、電弧を自
己消弧せしめたものである。(Structure of the Invention) The present invention connects an inductance and a capacitor to the output part of a power supply that supplies DC voltage and DC power to a target, and when an electric arc is generated in the vacuum chamber,
The circuit Km between the low load resistance of this electric arc, the inductance, the capacitor, and the internal resistance of the power supply generates free vibration, and due to the short-term voltage drop or reverse polarity voltage generated in the target based on this free vibration, The electric arc is self-extinguished.
（実施例） 以下この発明の実施例を図面を用いて詳細に説明する。(Example) Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図にて、真空室ｌ＃ｉ′図示しない真空ポンプで真
空に排気された後、図示しないガス導入系によって放電
に適した圧力に調整されている。In FIG. 1, the vacuum chamber l#i' is evacuated to vacuum by a vacuum pump (not shown), and then adjusted to a pressure suitable for discharge by a gas introduction system (not shown).
真空室１の中にはスパッターターゲット２、及び被膜を
形成する基板３が配置されている。ターゲット２と真空
室１の間には、本発明の特徴となる消弧回路７を通して
直流電源６から直流電圧が加えら□れる。ターゲット２
は負の電圧にする。このスパッタ装置に使われる直流電
源６には、一般に定電流制御あるいは定電力制御された
ものが用いられ、その出力容量は１譚〜数１０ｋＷ位で
ある。A sputter target 2 and a substrate 3 on which a film is to be formed are arranged in a vacuum chamber 1. A DC voltage is applied between the target 2 and the vacuum chamber 1 from a DC power supply 6 through an arc extinguishing circuit 7, which is a feature of the present invention. target 2
is a negative voltage. The DC power supply 6 used in this sputtering apparatus is generally one controlled by constant current or constant power, and its output capacity is about 1 kW to several tens of kW.
ターゲット２に負の電圧を加えると真空室中でプラズマ
放電８を起し、ターゲット２がスパッタされてターゲツ
ト板の原子が基板３上に堆積される。When a negative voltage is applied to the target 2, a plasma discharge 8 is generated in the vacuum chamber, the target 2 is sputtered, and the atoms of the target plate are deposited on the substrate 3.
もし、この放電中ターゲット中に不純物等があったり突
起部があったりするとプラズマが一部分高密度になり電
弧が発生することは前記した通りであるが、この場合回
路７がこの電弧を高速に消弧する。第２図は第１図の等
価回路。第３図にはこの時のターゲット電圧波形、第４
図にはターゲット電流波形を示す。As mentioned above, if there are impurities or protrusions in the target during this discharge, the plasma will partially become dense and an electric arc will be generated. arc Figure 2 is an equivalent circuit of Figure 1. Figure 3 shows the target voltage waveform at this time,
The figure shows the target current waveform.
以下には、これら第３，４図の電圧、電流波形の発生の
理由を述べる。The reason for the generation of the voltage and current waveforms shown in FIGS. 3 and 4 will be described below.
正常放電中の放電抵抗９は数１０００乃至数にΩである
が、電弧のトリガ１０が入ると、その電弧８の負荷抵抗
１１は非常に小さく０．１０乃至数Ωになる。即ち放電
抵抗９と電弧の負荷抵抗は２桁もの大きな差がある。電
弧８が発生した時、電楓抵抗１１．とコイル１２．コン
デンサー１３．電源６の回路に第３，４図の自由振動を
起させる様にそれぞれの定数を選定しておくとこの自由
振動は、第４図の様に電流を瞬間的に零にしてしまう。During normal discharge, the discharge resistance 9 is several thousand to several thousand ohms, but when the electric arc trigger 10 is activated, the load resistance 11 of the electric arc 8 is extremely small, ranging from 0.10 to several ohms. That is, there is a large difference of two orders of magnitude between the discharge resistance 9 and the load resistance of the electric arc. When electric arc 8 occurs, electric map resistor 11. and coil 12. Capacitor 13. If the respective constants are selected so as to cause the free oscillations shown in FIGS. 3 and 4 in the circuit of the power source 6, this free oscillation causes the current to instantaneously become zero as shown in FIG.
電源６のインピーダンスを交流的に００と仮定し、コイ
ル１２のインダクタンスをＬ１コンデンサー１３の答蓋
をＣ１電弧抵抗をｒとすると自由振動Ｌ
の条件は、周知の通り−７６＜ ４ ｒ”となり又その
時の振動数は
で求められる。例えば電弧抵抗ｒ＝１Ωの場合、コンデ
ンサｃＶｃｉμＦ１コイルＬに１μＨを使用したとする
と Ｌ、、４ｒ２＝４で±〈４ｒ２を満足ＣＣ
し自由振動を起し、その振動周波数は
ｆ＝±ｆｉｘ １０’キー ３７ ｋ）ｌｚ２π
となる。従ってその周期はＴ＝７．２μｓ６ｃこの場合
第４図の消弧時間ｔはほぼＴであって約３．６μｓとな
る。第３図、第４図にて時間区間ｔｌでは正常な放電を
している。時刻ｔ２で電弧が発生すると、以後の電圧は
極端に降下し、電流は自由振動をおこし時刻ｔ３で消弧
する。自由振動は急速に減衰しつ＼復び電圧が上昇し時
刻ｔ４で放電を開始し以下の時間区間ｔ６では正常な放
電に移る。時刻ｔ２一時刻ｔ４かハ譬前記の周期Ｔに当
る。従って、この実施例によれば電弧は回路の自由振動
に基づいてターゲットに生ずる逆極性電圧によってμｓ
ｅｃオーダーの短時間内に確実に自己消弧されることに
なる。Assuming that the impedance of the power source 6 is 00 AC, the inductance of the coil 12 is L1, the capacitance of the capacitor 13 is C1, and the arc resistance is r, the condition for free vibration L is -76<4 r'', as is well known. The frequency of vibration at that time is found by. For example, when the arc resistance r = 1Ω, if 1μH is used for the capacitor cVciμF1 coil L, then 4r2 = 4 satisfies ±〈4r2 CC and causes free vibration, The vibration frequency is f=±fix 10'key 37 k)lz2π.Therefore, the period is T=7.2μs6c.In this case, the extinction time t in FIG. 4 is approximately T, which is approximately 3.6μs. In FIGS. 3 and 4, normal discharge occurs in the time interval tl. When an electric arc occurs at time t2, the voltage thereafter drops extremely, the current causes free oscillation, and the arc is extinguished at time t3. The free oscillation rapidly attenuates and the voltage rises again, starting discharge at time t4, and transitioning to normal discharge in the following time interval t6.Time t2 - time t4 corresponds to the above-mentioned period T.Therefore, , according to this embodiment, the electric arc is caused by the opposite polarity voltage generated on the target due to the free vibration of the circuit.
The arc will surely be self-extinguished within a short time of EC order.
付加する部品はＬとＣのみであって極めて経済性に富む
。なお、これらコイル１２．コンデンサー１３の値は上
述以外の値が選定できることは明らかである。またター
ゲットに生ずる電圧は逆極性にまで到らなくても、極め
て低い電圧にすることでも電弧の消弧は達成される。The only parts to be added are L and C, making it extremely economical. Note that these coils 12. It is clear that the value of the capacitor 13 can be selected other than those mentioned above. Further, even if the voltage generated at the target does not reach the opposite polarity, extinguishing the electric arc can be achieved by reducing the voltage to an extremely low level.
また本発明は第５図、第６図、第７図のようにも実施で
きる。これらの実施例でも前記実施例と同様、電弧発生
時に過渡的にり、Ｃ回路で自由振動を生ずる様な定数を
選ぶものである。更に又これら第４．５，６．７図の回
路を複合したものでも回路を構成することはできる。第
５図ではコイル１４が追加されており、第６図ではコイ
ル１２とコンデンサ１３が並列に接続されている。第７
図は基板３にＤＣバイアスを加えそのＤｃｔｓの出力部
にコイル１２．コンデンサ１３ｔｌ″接続した実施例で
あり、主たる電源１５には交番電力を用いている。Further, the present invention can also be implemented as shown in FIGS. 5, 6, and 7. In these embodiments, as in the previous embodiments, constants are selected so as to cause free vibration in the C circuit during a transient period when an electric arc occurs. Furthermore, a circuit can be constructed by combining the circuits shown in FIGS. 4.5 and 6.7. In FIG. 5, a coil 14 is added, and in FIG. 6, the coil 12 and capacitor 13 are connected in parallel. 7th
In the figure, a DC bias is applied to the substrate 3 and the output part of the DCts is connected to the coil 12. This is an embodiment in which a capacitor 13tl'' is connected, and alternating power is used as the main power source 15.
（発明の効果）
本発明は、Ｌ、Ｃ定数を選んで電源にコイルとコンデン
サを接続することにより、電弧発生時に電弧を含む回路
に自由珈動を起させ瞬間的に電弧を自己消弧させること
ができる。非常に簡単な回路で経済性にも富んでいる。(Effects of the Invention) The present invention selects the L and C constants and connects a coil and a capacitor to a power supply, thereby causing free vibration in the circuit containing the electric arc when an electric arc occurs, and instantly extinguishing the electric arc by itself. be able to. It is a very simple circuit and is highly economical.
第１図は、本発明の実施例のスパッタ装置の図。
第２図は、その等価回路の図。
第３図は、その電弧発生時の消弧の過程を示す自由振動
電圧のグラフ。
第４図は、同様の電流のグラフ。
第５図、第６図、第７図は、それぞれ本発明の別の実施
例の図。
第８図（ａ）は、従来のスパッタ装置の図。
第８図（ｂ）は、第８図（ａ）の装置に用いられる電源
電圧のグラフ。
第９図は、従来の別のスパッタ装置の図。
１・・・・・・真空容器、２・・・・・・ターゲット、
３・・・・・・基板、１２・−・・・・コイル、１３・
・・・・・コンデンサ、６・・・−〇 −
・・・直流電源。
ＦＩＧ、５
ＦＩＧ、７FIG. 1 is a diagram of a sputtering apparatus according to an embodiment of the present invention. FIG. 2 is a diagram of its equivalent circuit. FIG. 3 is a graph of free oscillating voltage showing the arc extinguishing process when the electric arc is generated. FIG. 4 is a similar current graph. FIG. 5, FIG. 6, and FIG. 7 are views of other embodiments of the present invention, respectively. FIG. 8(a) is a diagram of a conventional sputtering apparatus. FIG. 8(b) is a graph of the power supply voltage used in the device of FIG. 8(a). FIG. 9 is a diagram of another conventional sputtering apparatus. 1... Vacuum container, 2... Target,
3... Board, 12... Coil, 13...
...Capacitor, 6...-〇 - ...DC power supply. FIG, 5 FIG, 7
Claims (1)
り被膜を形成する基板を収容する真空室と、この真空室
を真空に排気する排気手段と、この真空室の圧力調整を
するガス導入手段と、該ターゲットに直流電圧および直
流電力を供給する電源とをそなえるスパッタ装置におい
て、該電源の出力部にインダクタンスとコンデンサを接
続し、かつ、該真空室内に電弧が発生したときに、その
電弧の低い負荷抵抗と前記インダクタンスとコンデンサ
と電源の内部抵抗との回路に生ずる電気的な自由振動に
基づいて、該ターゲットに発生する短時間の電圧降下又
は逆極性電圧によって該電弧を自己消弧せしめたことを
特徴とするスパッタ装置。a vacuum chamber for accommodating a target for sputtering and a substrate on which a film is to be formed by the sputtering; an evacuation means for evacuating the vacuum chamber; a gas introduction means for adjusting the pressure of the vacuum chamber; In a sputtering apparatus equipped with a power supply that supplies DC voltage and DC power, an inductance and a capacitor are connected to the output part of the power supply, and when an electric arc is generated in the vacuum chamber, the low load resistance of the electric arc and the It is characterized in that the electric arc is self-extinguished by a short-term voltage drop or reverse polarity voltage that occurs in the target based on electrical free vibrations that occur in a circuit consisting of an inductance, a capacitor, and an internal resistance of the power source. Sputtering equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15106584A JPS6130665A (en) | 1984-07-20 | 1984-07-20 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15106584A JPS6130665A (en) | 1984-07-20 | 1984-07-20 | Sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6130665A true JPS6130665A (en) | 1986-02-12 |
| JPH0114312B2 JPH0114312B2 (en) | 1989-03-10 |
Family
ID=15510532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15106584A Granted JPS6130665A (en) | 1984-07-20 | 1984-07-20 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6130665A (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6314863A (en) * | 1986-07-04 | 1988-01-22 | Shinku Kikai Kogyo Kk | Vacuum device |
| US5427669A (en) * | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
| US5576939A (en) * | 1995-05-05 | 1996-11-19 | Drummond; Geoffrey N. | Enhanced thin film DC plasma power supply |
| US5645698A (en) * | 1992-09-30 | 1997-07-08 | Advanced Energy Industries, Inc. | Topographically precise thin film coating system |
| US5718813A (en) * | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
| US5747935A (en) * | 1992-04-16 | 1998-05-05 | Advanced Energy Industries, Inc. | Method and apparatus for stabilizing switch-mode powered RF plasma processing |
| US5815388A (en) * | 1996-06-21 | 1998-09-29 | Sierra Applied Sciences, Inc. | Polarity reversing circuit having energy compensation |
| US5882492A (en) * | 1996-06-21 | 1999-03-16 | Sierra Applied Sciences, Inc. | A.C. plasma processing system |
| US5889391A (en) * | 1997-11-07 | 1999-03-30 | Sierra Applied Sciences, Inc. | Power supply having combined regulator and pulsing circuits |
| US5910886A (en) * | 1997-11-07 | 1999-06-08 | Sierra Applied Sciences, Inc. | Phase-shift power supply |
| US5990668A (en) * | 1997-11-07 | 1999-11-23 | Sierra Applied Sciences, Inc. | A.C. power supply having combined regulator and pulsing circuits |
| US5993613A (en) * | 1997-11-07 | 1999-11-30 | Sierra Applied Sciences, Inc. | Method and apparatus for periodic polarity reversal during an active state |
| US6011704A (en) * | 1997-11-07 | 2000-01-04 | Sierra Applied Sciences, Inc. | Auto-ranging power supply |
| US6217717B1 (en) * | 1992-12-30 | 2001-04-17 | Advanced Energy Industries, Inc. | Periodically clearing thin film plasma processing system |
| US6368477B1 (en) | 1995-04-07 | 2002-04-09 | Advanced Energy Industries, Inc. | Adjustable energy quantum thin film plasma processing system |
| WO2003103348A1 (en) * | 2002-05-31 | 2003-12-11 | 芝浦メカトロニクス株式会社 | Discharging power source, sputtering power source, and sputtering device |
| JP2004134376A (en) * | 2002-07-11 | 2004-04-30 | Fuji Photo Film Bv | Improved apparatus for producing and sustaining glow discharge plasma under atmospheric condition |
| WO2010008636A1 (en) * | 2008-07-17 | 2010-01-21 | Mks Instruments, Inc. | Sputtering system and method including an arc detection system |
| US20100025230A1 (en) * | 2006-04-11 | 2010-02-04 | Hauzer Techno Coating Bv | Vacuum Treatment Apparatus, A Bias Power Supply And A Method Of Operating A Vacuum Treatment Apparatus |
| US20110266143A1 (en) * | 2010-04-28 | 2011-11-03 | Hon Hai Precision Industry Co., Ltd. | Sputtering system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5773346B2 (en) * | 2009-03-12 | 2015-09-02 | 株式会社アルバック | Self-ion sputtering equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55145170A (en) * | 1979-04-28 | 1980-11-12 | Tokuda Seisakusho Ltd | Arc-breaking method of direct current electric discharge unit and its circuit |
-
1984
- 1984-07-20 JP JP15106584A patent/JPS6130665A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55145170A (en) * | 1979-04-28 | 1980-11-12 | Tokuda Seisakusho Ltd | Arc-breaking method of direct current electric discharge unit and its circuit |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6314863A (en) * | 1986-07-04 | 1988-01-22 | Shinku Kikai Kogyo Kk | Vacuum device |
| US5747935A (en) * | 1992-04-16 | 1998-05-05 | Advanced Energy Industries, Inc. | Method and apparatus for stabilizing switch-mode powered RF plasma processing |
| US6046546A (en) * | 1992-04-16 | 2000-04-04 | Advanced Energy Industries, Inc. | Stabilizer for switch-mode powered RF plasma |
| US6120656A (en) * | 1992-09-30 | 2000-09-19 | Advanced Energy Industries, Inc. | Topographically precise thin film coating system |
| US5645698A (en) * | 1992-09-30 | 1997-07-08 | Advanced Energy Industries, Inc. | Topographically precise thin film coating system |
| US6521099B1 (en) | 1992-12-30 | 2003-02-18 | Advanced Energy Industries, Inc. | Periodically clearing thin film plasma processing system |
| US6024844A (en) * | 1992-12-30 | 2000-02-15 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
| US5718813A (en) * | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
| US6217717B1 (en) * | 1992-12-30 | 2001-04-17 | Advanced Energy Industries, Inc. | Periodically clearing thin film plasma processing system |
| US5427669A (en) * | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
| US6001224A (en) * | 1993-04-02 | 1999-12-14 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
| US6368477B1 (en) | 1995-04-07 | 2002-04-09 | Advanced Energy Industries, Inc. | Adjustable energy quantum thin film plasma processing system |
| US5576939A (en) * | 1995-05-05 | 1996-11-19 | Drummond; Geoffrey N. | Enhanced thin film DC plasma power supply |
| US5882492A (en) * | 1996-06-21 | 1999-03-16 | Sierra Applied Sciences, Inc. | A.C. plasma processing system |
| US5815388A (en) * | 1996-06-21 | 1998-09-29 | Sierra Applied Sciences, Inc. | Polarity reversing circuit having energy compensation |
| US6011704A (en) * | 1997-11-07 | 2000-01-04 | Sierra Applied Sciences, Inc. | Auto-ranging power supply |
| US5993613A (en) * | 1997-11-07 | 1999-11-30 | Sierra Applied Sciences, Inc. | Method and apparatus for periodic polarity reversal during an active state |
| US5990668A (en) * | 1997-11-07 | 1999-11-23 | Sierra Applied Sciences, Inc. | A.C. power supply having combined regulator and pulsing circuits |
| US5910886A (en) * | 1997-11-07 | 1999-06-08 | Sierra Applied Sciences, Inc. | Phase-shift power supply |
| US5889391A (en) * | 1997-11-07 | 1999-03-30 | Sierra Applied Sciences, Inc. | Power supply having combined regulator and pulsing circuits |
| WO2003103348A1 (en) * | 2002-05-31 | 2003-12-11 | 芝浦メカトロニクス株式会社 | Discharging power source, sputtering power source, and sputtering device |
| US7695599B2 (en) | 2002-05-31 | 2010-04-13 | Shibaura Mechatronics Corporation | Discharging power source, sputtering power source, and sputtering device |
| JP2004134376A (en) * | 2002-07-11 | 2004-04-30 | Fuji Photo Film Bv | Improved apparatus for producing and sustaining glow discharge plasma under atmospheric condition |
| US20100025230A1 (en) * | 2006-04-11 | 2010-02-04 | Hauzer Techno Coating Bv | Vacuum Treatment Apparatus, A Bias Power Supply And A Method Of Operating A Vacuum Treatment Apparatus |
| WO2010008636A1 (en) * | 2008-07-17 | 2010-01-21 | Mks Instruments, Inc. | Sputtering system and method including an arc detection system |
| US9613784B2 (en) | 2008-07-17 | 2017-04-04 | Mks Instruments, Inc. | Sputtering system and method including an arc detection |
| US10607821B2 (en) | 2008-07-17 | 2020-03-31 | MKS Insturments, Inc. | Sputtering system and method including an arc detection |
| US20110266143A1 (en) * | 2010-04-28 | 2011-11-03 | Hon Hai Precision Industry Co., Ltd. | Sputtering system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0114312B2 (en) | 1989-03-10 |
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