JP2000001770A - Vapor deposition apparatus for generating trigger discharge by using transformer - Google Patents
Vapor deposition apparatus for generating trigger discharge by using transformerInfo
- Publication number
- JP2000001770A JP2000001770A JP10171942A JP17194298A JP2000001770A JP 2000001770 A JP2000001770 A JP 2000001770A JP 10171942 A JP10171942 A JP 10171942A JP 17194298 A JP17194298 A JP 17194298A JP 2000001770 A JP2000001770 A JP 2000001770A
- Authority
- JP
- Japan
- Prior art keywords
- trigger
- vapor deposition
- deposition material
- electrode
- arc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Discharge Heating (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は蒸着装置に関し、特
に、同軸型真空アーク蒸着源を有する蒸着装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor deposition apparatus, and more particularly to a vapor deposition apparatus having a coaxial vacuum arc vapor deposition source.
【０００２】[0002]
【従来の技術】金属や誘電体材料等の薄膜は、半導体装
置や液晶表示装置に不可欠なものとなっており、スパッ
タリング法、蒸着法、ＣＶＤ法等の種々の薄膜形成方法
が開発されている。2. Description of the Related Art Thin films such as metals and dielectric materials are indispensable for semiconductor devices and liquid crystal display devices, and various thin film forming methods such as sputtering, vapor deposition, and CVD have been developed. .
【０００３】それらの形成方法のうち、膜厚制御性に優
れ、高品質の薄膜を形成できることから、近年では同軸
型真空アーク蒸着源を用いた蒸着装置が注目されてい
る。[0003] Among these forming methods, a vapor deposition apparatus using a coaxial vacuum arc vapor deposition source has recently attracted attention because of its excellent film thickness controllability and the ability to form a high quality thin film.
【０００４】図４を参照し、符号１１０は、従来技術の
蒸着装置であり、真空槽１０１を有している。真空槽１
０１底面には、同軸型真空アーク蒸着源１０３が配置さ
れており、天井側には基板ホルダ１０５が配置されてい
る。[0004] Referring to FIG. 4, reference numeral 110 denotes a conventional vapor deposition apparatus having a vacuum chamber 101. Vacuum chamber 1
01, a coaxial vacuum arc evaporation source 103 is arranged, and a substrate holder 105 is arranged on the ceiling side.
【０００５】同軸型真空アーク蒸着源１０３の模式的な
断面図を図３(ａ)に示す。この同軸型真空アーク蒸着源
１０３は、円筒形形状のアノード電極１３０を有してお
り、該アノード電極１３０内には、カソード部１４０が
配置されている。カソード部１４０は、絶縁管１４１
と、トリガ電極１４２と、蒸着材料１４３と、取付台１
４５とを有している。FIG. 3A is a schematic sectional view of the coaxial vacuum arc evaporation source 103. The coaxial vacuum arc evaporation source 103 has a cylindrical anode electrode 130, and a cathode section 140 is arranged in the anode electrode 130. The cathode section 140 is provided with an insulating tube 141.
, Trigger electrode 142, vapor deposition material 143, mounting table 1
45.
【０００６】絶縁管１４１は、円筒形形状にされてお
り、取付台１４５と蒸着材料１４３は円柱形形状に成形
され、絶縁管１４１内部に挿入されている。絶縁管１４
１内部では、取付台１４５は奥側に、蒸着材料１４３は
先端付近に配置されており、蒸着材料１４３の下端部
は、取付台１４５の上端部に密着固定され、上端部は絶
縁管１４１先端から突き出されている。The insulating tube 141 is formed in a cylindrical shape, and the mounting base 145 and the vapor deposition material 143 are formed into a cylindrical shape and inserted into the inside of the insulating tube 141. Insulation tube 14
1, the mounting base 145 is disposed on the back side and the vapor deposition material 143 is disposed near the front end. The lower end of the vapor deposition material 143 is fixed to the upper end of the mounting base 145 in close contact, and the upper end of the insulating tube 141 Protruded from.
【０００７】絶縁管１４１の先端には、リング形形状の
トリガ電極１４２が装着されており、従って、蒸着材料
１４３側面とトリガ電極１４２表面とは、非接触の状態
で近接配置されている。A ring-shaped trigger electrode 142 is mounted on the tip of the insulating tube 141. Therefore, the side surface of the vapor deposition material 143 and the surface of the trigger electrode 142 are arranged close to each other in a non-contact state.
【０００８】真空槽１０１の外部には、トリガ電源１２
０とアーク電源１４７とが配置されている。各電源１２
０、１４７の負電位側の端子は、それぞれ取付台１４５
に共通に接続されている。他方、トリガ電源１２０の正
電位側の端子はトリガ電極１４２に接続されており、ア
ーク電源１４７の正電位側の端子はアノード電極１３０
に接続されている。A trigger power supply 12 is provided outside the vacuum chamber 101.
0 and an arc power supply 147 are arranged. Each power supply 12
Terminals 0 and 147 on the negative potential side are respectively attached to the mounting base 145.
Are connected in common. On the other hand, a positive potential terminal of the trigger power supply 120 is connected to the trigger electrode 142, and a positive potential terminal of the arc power supply 147 is connected to the anode electrode 130.
It is connected to the.
【０００９】この蒸着装置１１０を用いて薄膜を形成す
る場合には、基板１０８を基板ホルダ１０５に保持さ
せ、真空槽１０１内部を真空排気しながら基板１０８を
加熱する。When a thin film is formed using the vapor deposition apparatus 110, the substrate 108 is held by the substrate holder 105, and the substrate 108 is heated while the inside of the vacuum chamber 101 is evacuated.
【００１０】基板１０８が所定温度まで昇温した後、ア
ーク電源１４７を起動し、アノード電極１３０に正電圧
を印加し、蒸着材料１４３に、取付台１４５を介して負
電圧を印加する。After the temperature of the substrate 108 is raised to a predetermined temperature, the arc power supply 147 is activated, a positive voltage is applied to the anode electrode 130, and a negative voltage is applied to the deposition material 143 via the mounting base 145.
【００１１】トリガ電源１２０内には、直流電圧源１２
１とコンデンサ１２２と抵抗１２３とスパークギャップ
１２４が設けられており、コンデンサ１２２の一端とス
パークギャップ１２４の一端は互いに接続され(直列接
続)、スパークギャップ１２４の他端はトリガ電源１２
０の正電位側の端子にされ、コンデンサ１２２の他端は
負電位側の端子にされている。The trigger power supply 120 includes a DC voltage source 12
1, a capacitor 122, a resistor 123, and a spark gap 124. One end of the capacitor 122 and one end of the spark gap 124 are connected to each other (series connection), and the other end of the spark gap 124 is connected to the trigger power supply 12.
0 is a terminal on the positive potential side, and the other end of the capacitor 122 is a terminal on the negative potential side.
【００１２】従って、コンデンサ１２２から見た場合、
スパークギャップ１２４が有するギャップと、トリガ電
極１４２と蒸着材料１４３との間のギャップとは直列に
なっている。Therefore, when viewed from the capacitor 122,
The gap of the spark gap 124 and the gap between the trigger electrode 142 and the deposition material 143 are in series.
【００１３】トリガ電源１２０内では、直流電圧源１２
１と定刻１２３とが直列接続された回路が、コンデンサ
１２２に対して並列接続されており、直流電圧源１２１
は、抵抗１２３で電流制限された状態で、コンデンサ１
２２を充電するように構成されている。In the trigger power supply 120, the DC voltage source 12
1 and an on-time 123 are connected in parallel to a capacitor 122, and a DC voltage source 121
Is the capacitor 1 in a state where the current is limited by the resistor 123.
22 is configured to be charged.
【００１４】トリガ電極１４２と蒸着材料１４３との間
のギャップは絶縁管１４１の厚みと等しく、非常に小さ
い。しかも、トリガ電極１４２と蒸着材料１４３との間
の耐圧は絶縁管１４１表面で沿面放電が生じる電圧であ
るから、トリガ電極１４２と蒸着材料１４３との間の耐
圧は、スパークギャップ１２４の耐圧に比べて非常に低
い。The gap between the trigger electrode 142 and the vapor deposition material 143 is equal to the thickness of the insulating tube 141 and is very small. Moreover, since the withstand voltage between the trigger electrode 142 and the deposition material 143 is a voltage at which creeping discharge occurs on the surface of the insulating tube 141, the withstand voltage between the trigger electrode 142 and the deposition material 143 is smaller than the withstand voltage of the spark gap 124. And very low.
【００１５】従って、直流電圧源１２１が起動され、コ
ンデンサ１２２への充電が開始され、コンデンサ１２２
の電圧が次第に上昇し、スパークギャップ１２４の耐圧
以上の電圧になると、スパークギャップ１２４内で放電
が発生し、それに伴ってトリガ電極１４２と蒸着材料１
４３の間にトリガ放電が発生する。Therefore, the DC voltage source 121 is activated, charging of the capacitor 122 is started, and the capacitor 122 is charged.
Gradually rises to a voltage higher than the withstand voltage of the spark gap 124, a discharge is generated in the spark gap 124, and accordingly, the trigger electrode 142 and the vapor deposition material 1 are discharged.
During 43, a trigger discharge occurs.
【００１６】図３(ｂ)の符号ｉ1は、トリガ放電によっ
て流れたトリガ電流を示しており、そのトリガ電流ｉ1
により、蒸着材料１４３側面が部分的に蒸発し、蒸着材
料１４３の蒸気が放出され、アノード電極１３０内の圧
力が上昇する。その結果、アノード電極１３０と蒸着材
料１４３との間の絶縁耐圧が低下し、蒸着材料１４３の
側面と、アノード電極１３０との間でアーク放電が発生
する。The symbol i 1 in FIG. 3B indicates a trigger current flowing by the trigger discharge, and the trigger current i 1
Thereby, the side surface of the evaporation material 143 is partially evaporated, the vapor of the evaporation material 143 is released, and the pressure in the anode electrode 130 increases. As a result, the withstand voltage between the anode electrode 130 and the deposition material 143 decreases, and an arc discharge occurs between the side surface of the deposition material 143 and the anode electrode 130.
【００１７】アーク放電によって、アノード電極１３０
内周面から蒸着材料１４３側面に向けてアーク電流ｉ2
が流れると、アーク電流ｉ2は大電流であるため、蒸着
材料１４３側面が溶融し、トリガ放電のときよりも大量
の蒸気が放出される。The arc discharge causes the anode electrode 130
The arc current i 2 from the inner peripheral surface toward the side surface of the deposition material 143
Flows, the arc current i 2 is a large current, so that the side surface of the vapor deposition material 143 is melted, and a larger amount of vapor is released than in the trigger discharge.
【００１８】蒸着材料１４３と取付台１４５とは円柱形
形状に成形されているため、アーク電流ｉ2は、カソー
ド部１４０内を直線的に流れる。アーク電流ｉ2が流れ
ることにより磁界が形成されると、その磁界は、正電荷
に対してアーク電流ｉ2の向きとは反対方向、即ち、真
空槽１内に向ける方向の力Ｆを及ぼす。Since the vapor deposition material 143 and the mounting table 145 are formed in a columnar shape, the arc current i 2 flows linearly in the cathode section 140. When a magnetic field is formed by the flow of the arc current i 2 , the magnetic field exerts a force F on the positive charge in a direction opposite to the direction of the arc current i 2 , that is, in a direction toward the inside of the vacuum chamber 1.
【００１９】蒸着材料１４３から成る蒸気中には、正に
帯電した微小粒子１５１が含まれているため、蒸着材料
１４３側面から様々な方向に飛び出した微小粒子１５１
は力Ｆの影響を受け、アノード電極１３０の開口部１４
９から真空槽１０１内に向けて放出される。Since the vapor composed of the vapor deposition material 143 contains the positively charged fine particles 151, the fine particles 151 protrude from the side surface of the vapor deposition material 143 in various directions.
Is affected by the force F, and the opening 14 of the anode electrode 130 is
9 is discharged into the vacuum chamber 101.
【００２０】蒸着材料１４３の延長線上には基板１０８
が位置しており、真空槽１０１内に放出された微小粒子
１５１は基板１０８方向に飛行し、基板１０８に到達す
ると、その表面に薄膜を成長させる。On the extension of the evaporation material 143, the substrate 108
Are positioned, and the fine particles 151 released into the vacuum chamber 101 fly in the direction of the substrate 108 and, when reaching the substrate 108, grow a thin film on the surface thereof.
【００２１】ところで、アーク電流ｉ2が流れると、微
小粒子１５１の他に、蒸着材料１４３の構成物質から成
る巨大粒子１５２も同時に放出されるが、その巨大粒子
１５２は、無電荷であるか、電荷を有していても、電荷
量に比べて質量が大きいので、力Ｆによる曲げ量が少な
く、その結果、巨大粒子１５２はアノード電極１３０の
内周面に付着し、真空槽１０１内には放出されない。By the way, when the arc current i 2 flows, in addition to the fine particles 151, the giant particles 152 made of the constituent material of the vapor deposition material 143 are also emitted, and the giant particles 152 have no charge. Even if it has an electric charge, since the mass is larger than the electric charge, the amount of bending due to the force F is small, and as a result, the giant particles 152 adhere to the inner peripheral surface of the anode electrode 130, and remain in the vacuum chamber 101. Not released.
【００２２】このように、アーク電流ｉ2が流れている
間に、微小粒子１５１が薄膜を成長させるが、アーク電
流ｉ2は大電流であるため、アーク電源１４７の消耗が
大きく、アーク電源１４７の出力電圧がアーク放電を維
持できなくなる程度まで低下すると、自動的にアーク放
電は停止する。As described above, while the arc current i 2 is flowing, the fine particles 151 grow a thin film. However, since the arc current i 2 is a large current, the arc power supply 147 is greatly consumed and the arc power supply 147 When the output voltage of the device drops to such an extent that the arc discharge cannot be maintained, the arc discharge stops automatically.
【００２３】従って、１回のトリガ放電によって放出さ
れる微小粒子１５１の量は、アーク電源１４７の電源能
力によって決まるので、必要なだけトリガ放電を繰り返
し発生させることで、所望膜厚の薄膜を形成できる。Accordingly, since the amount of the fine particles 151 emitted by one trigger discharge is determined by the power supply capability of the arc power supply 147, the trigger discharge is repeatedly generated as necessary to form a thin film having a desired film thickness. it can.
【００２４】上記のような蒸着装置１１０は、トリガ放
電の回数によって膜厚を精密に制御することができ、し
かも、巨大粒子１５２が基板１０８に到達せず、良質の
薄膜を形成できることから、Ｔａ、ＮｉＦｅ、Ｃｕ、Ｃ
ｏ、ＦｅＭｎ等の、高性能磁気薄膜を製造する場合に盛
んに用いられている。In the vapor deposition apparatus 110 as described above, the film thickness can be precisely controlled by the number of trigger discharges, and since the giant particles 152 do not reach the substrate 108 and a high-quality thin film can be formed, , NiFe, Cu, C
o, FeMn, and the like, are widely used when manufacturing high-performance magnetic thin films.
【００２５】ところが上記基板１０８表面に形成された
薄膜を精密に分析してみると、蒸着材料１４３以外の物
質が不純物として検出される場合がある。その不純物を
同定してみると、トリガ電極１４２を構成している金属
物質と同じ金属物質であり、従って、不純物はトリガ電
極１４２に由来すると考えられる。近年では、薄膜の高
純度化、高品質化が増々求められているため、形成され
る薄膜中に上記のような不純物を混入させない蒸着装置
が求められている。However, when the thin film formed on the surface of the substrate 108 is precisely analyzed, substances other than the deposition material 143 may be detected as impurities. When the impurity is identified, it is considered that the impurity is derived from the trigger electrode 142 because the metal is the same as the metal constituting the trigger electrode 142. In recent years, since higher purity and higher quality of a thin film have been increasingly required, a vapor deposition apparatus which does not mix the above-described impurities into a formed thin film has been required.
【００２６】[0026]
【発明が解決しようとする課題】本発明は上記従来技術
の不都合を解決するために創作されたものであり、その
目的は、同軸型真空アーク蒸着源により、高純度の薄膜
を形成できる技術を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned disadvantages of the prior art, and an object of the present invention is to provide a technique for forming a high-purity thin film by using a coaxial vacuum arc evaporation source. To provide.
【００２７】[0027]
【課題を解決するための手段】上記のように、トリガ放
電はアーク放電を誘起するために必要であるが、従来の
ようなトリガ電源１２０では、トリガ放電が発生した
後、コンデンサ１２２の電圧が低下し、一旦トリガ電流
がゼロになると、トリガ放電は終了するものと考えられ
ていた。As described above, the trigger discharge is necessary to induce the arc discharge. However, in the conventional trigger power supply 120, after the trigger discharge occurs, the voltage of the capacitor 122 is reduced. It was thought that the trigger discharge would end once it had dropped and the trigger current had reached zero.
【００２８】本発明の発明者等は、コンデンサ１２２や
スパークギャップ１２４を用いたトリガ電源１２０に
は、コンデンサ１２２の容量性成分の他、配線が有する
誘導性成分により、トリガ電極１４２とトリガ電源１２
０の間に共振回路が形成されてしまい、トリガ電極１４
２に交流電流が流れていることを見出した。The inventor of the present invention has stated that the trigger electrode 142 and the trigger power supply 12 are provided to the trigger power supply 120 using the capacitor 122 and the spark gap 124 by the inductive component of the wiring in addition to the capacitive component of the capacitor 122.
0, a resonance circuit is formed, and the trigger electrode 14
2. It was found that an alternating current was flowing in No. 2.
【００２９】交流電流が流れる場合、電流がトリガ電極
１４２から蒸着材料１４３に向けて流れる間は、蒸着材
料１４３が蒸発するが、それとは逆に、電流がトリガ電
極１４２に流れ込むと、トリガ電極１４２を構成する物
質が放出され、アーク電流が形成する磁界により、基板
１０８方向に飛ばされ、薄膜中に混入してしまうことが
分かった。上記のような不都合を防止するためには、共
振回路が形成されないようにすればよく、そのためには
コンデンサ１２２を用いないトリガ電源が必要となる。When an alternating current flows, the vapor deposition material 143 evaporates while the current flows from the trigger electrode 142 toward the vapor deposition material 143. Conversely, when the current flows into the trigger electrode 142, the trigger electrode 142 evaporates. It is found that the substance constituting is discharged, is sputtered toward the substrate 108 by the magnetic field formed by the arc current, and is mixed into the thin film. In order to prevent the above-described inconvenience, it is only necessary to prevent a resonance circuit from being formed, and for that purpose, a trigger power supply not using the capacitor 122 is required.
【００３０】本発明は上記知見に基いて創作されたもの
であり、請求項１記載の発明は、アノード電極と蒸着材
料との間に電圧を印加した状態で、トリガ電極と前記蒸
着材料との間にトリガ放電を発生させ、前記アノード電
極と前記蒸着材料との間にアーク放電を誘起させ、前記
蒸着材料を蒸発させ、成膜対象物表面に薄膜を形成する
蒸着装置であって、一次巻線と二次巻線とが磁気結合さ
れたトランスと、パルス電圧を発生させるパルス電源と
を有し、前記一次巻線に前記パルス電圧を印加し、前記
二次巻線に誘起された電圧を前記トリガ電極と前記蒸着
材料との間に印加し、前記トリガ放電を発生させるよう
に構成されたことを特徴とする。The present invention has been made on the basis of the above findings, and the invention according to claim 1 is a method in which a voltage is applied between an anode electrode and a vapor deposition material while a trigger electrode and the vapor deposition material are connected to each other. A vapor discharge device for generating a trigger discharge between the anode electrode and the vapor deposition material, inducing an arc discharge between the anode electrode and the vapor deposition material, evaporating the vapor deposition material, and forming a thin film on the surface of the film formation target; A transformer in which a line and a secondary winding are magnetically coupled, and a pulse power supply that generates a pulse voltage, apply the pulse voltage to the primary winding, and reduce a voltage induced in the secondary winding. It is configured to be applied between the trigger electrode and the deposition material to generate the trigger discharge.
【００３１】請求項２記載の発明は、請求項１記載の蒸
着装置であって、前記一次巻線と前記二次巻線の巻数比
は、前記二次巻線が、前記一次巻線に印加された電圧を
増幅するように設定されていることを特徴とする。According to a second aspect of the present invention, in the vapor deposition apparatus according to the first aspect, the winding ratio of the primary winding to the secondary winding is such that the secondary winding is applied to the primary winding. The amplified voltage is set to be amplified.
【００３２】本発明は上記のように構成されており、ア
ノード電極と蒸着材料との間に電圧を印加した状態で、
トリガ電極と蒸着材料との間にトリガ放電を発生させ、
アノード電極と蒸着材料との間にアーク放電を誘起さ
せ、アーク電極と対向する蒸着材料の側面部分を蒸発さ
せ、アーク電極に向けて飛行する正のイオンをアーク電
流が形成する磁界で曲げ、アーク電極の開放口から真空
槽内に放出させ、成膜対象物表面に到達させて薄膜を成
長させるようになっている。The present invention is configured as described above, and in a state where a voltage is applied between the anode electrode and the deposition material,
Generating a trigger discharge between the trigger electrode and the deposition material,
An arc discharge is induced between the anode electrode and the vapor deposition material, the side surface of the vapor deposition material facing the arc electrode is evaporated, and positive ions flying toward the arc electrode are bent by a magnetic field formed by the arc current, thereby forming an arc. The film is released into the vacuum chamber from the opening of the electrode, and reaches the surface of the film-forming target to grow a thin film.
【００３３】そして、本発明の蒸着装置は、一次巻線と
二次巻線とが磁気結合されたトランスと、パルス電圧を
発生させるパルス電源とを有しており、一次巻線にパル
ス電圧を印加し、二次巻線に誘起された電圧をトリガ電
極と蒸着材料との間に印加することでトリガ放電を発生
させるように構成されている。The vapor deposition apparatus of the present invention has a transformer in which a primary winding and a secondary winding are magnetically coupled, and a pulse power supply for generating a pulse voltage. The pulse voltage is applied to the primary winding. The trigger discharge is generated by applying a voltage induced in the secondary winding between the trigger electrode and the deposition material.
【００３４】従って、トリガ電流が流れる経路中に容量
性成分が存在せず、共振回路が形成されないので、トリ
ガ電極に交流電流は流れず、トリガ電極を構成する物質
が真空槽内に放出されないようになっている。Therefore, since no capacitive component exists in the path through which the trigger current flows, and no resonance circuit is formed, no alternating current flows to the trigger electrode, and the material constituting the trigger electrode is not released into the vacuum chamber. It has become.
【００３５】また、トランス内では、一次巻線の巻数と
二次巻線の巻数が、二次巻線が、一次巻線に印加された
電圧を増幅するように比率が設定されている。従って、
パルス電源の負担が少なく、容易にトリガ放電を発生さ
せられるようになっている。In the transformer, the ratio of the number of turns of the primary winding to the number of turns of the secondary winding is set so that the secondary winding amplifies the voltage applied to the primary winding. Therefore,
The load on the pulse power source is small, and the trigger discharge can be easily generated.
【００３６】[0036]
【発明の実施の形態】図１を参照し、符号１０は本発明
の蒸着装置であり、真空槽１を有している(真空槽１の
全体は図示しない)。真空槽１の底壁には、同軸型真空
アーク蒸着源３が配置されている。同軸型真空アーク蒸
着源３は、底板４８と、アノード電極３０と、カソード
部４０とを有しており、底板４８は真空槽１の底壁に固
定されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG. 1, reference numeral 10 denotes a vapor deposition apparatus of the present invention, which has a vacuum chamber 1 (the entire vacuum chamber 1 is not shown). A coaxial vacuum arc evaporation source 3 is arranged on the bottom wall of the vacuum chamber 1. The coaxial vacuum arc evaporation source 3 has a bottom plate 48, an anode electrode 30, and a cathode unit 40, and the bottom plate 48 is fixed to a bottom wall of the vacuum chamber 1.
【００３７】アノード電極３０は、円筒形形状の金属材
料で構成されており、下端を底板４８上に固定され、上
端の開放部分を真空槽１天井側に向けられている。カソ
ード部４０は、絶縁管４１と、取付台４５と、蒸着材料
４３と、トリガ電極４２とを有している。絶縁管４１
は、円筒形形状にされており、取付台４５と蒸着材料４
３は円柱形形状に成形され、絶縁管４１内部に挿入され
ている。The anode 30 is made of a cylindrical metal material, and has a lower end fixed on the bottom plate 48 and an open upper end directed toward the ceiling of the vacuum chamber 1. The cathode section 40 has an insulating tube 41, a mounting base 45, a deposition material 43, and a trigger electrode. Insulating tube 41
Has a cylindrical shape, and the mounting table 45 and the vapor deposition material 4
3 is formed into a cylindrical shape and inserted into the insulating tube 41.
【００３８】絶縁管４１内部では、取付台４５は奥側
に、蒸着材料４３は先端付近に配置されており、蒸着材
料４３の下端部は、取付台４５の上端部に密着固定さ
れ、上端部は、絶縁管４１先端から突き出されている。Inside the insulating tube 41, the mounting base 45 is disposed on the back side, and the vapor deposition material 43 is disposed near the front end. The lower end of the vapor deposition material 43 is tightly fixed to the upper end of the mounting base 45. Project from the tip of the insulating tube 41.
【００３９】トリガ電極４２は、リング形形状に形成さ
れており、絶縁管４１の先端に装着されている。従っ
て、蒸着材料４３側面とトリガ電極４２表面とは、非接
触の状態で近接配置されている。The trigger electrode 42 is formed in a ring shape and is mounted on the tip of the insulating tube 41. Therefore, the side surface of the deposition material 43 and the surface of the trigger electrode 42 are arranged close to each other in a non-contact state.
【００４０】真空槽１の外部には、トリガ電源２０とア
ーク電源４７が配置されており、各電源２０、４７の負
電位側の端子は、取付台４５を介して蒸着材料４３に共
通に接続され、トリガ電源２０の正電位側の端子はトリ
ガ電極４２に接続され、アーク電源４７の正電位側の端
子はアノード電極３０に接続されている。A trigger power supply 20 and an arc power supply 47 are arranged outside the vacuum chamber 1, and the terminals on the negative potential side of each of the power supplies 20 and 47 are commonly connected to the vapor deposition material 43 via a mounting base 45. The terminal on the positive potential side of the trigger power supply 20 is connected to the trigger electrode 42, and the terminal on the positive potential side of the arc power supply 47 is connected to the anode electrode 30.
【００４１】トリガ電源２０は、パルス電圧を発生させ
るパルス電源２１と、トランス２２(パルストランス)を
有している。トランス２２内には、一次巻線２２aと、
該一次巻線２２aと磁気結合した二次巻線２２bとが設け
られており、一次巻線２２aの両端はパルス電源２１の
正電位側の端子と負電位側の端子にそれぞれ接続されて
いる。The trigger power supply 20 has a pulse power supply 21 for generating a pulse voltage, and a transformer 22 (pulse transformer). In the transformer 22, a primary winding 22a,
A primary winding 22a is magnetically coupled with a secondary winding 22b. Both ends of the primary winding 22a are connected to a positive potential terminal and a negative potential terminal of the pulse power supply 21, respectively.
【００４２】他方、二次巻線２２bの一端は、トリガ電
源２０の正電位側の端子にされており、従って、トリガ
電極４２に接続されている。二次巻線２２bの他端はパ
ルス電源２１の負電位側の端子と接続され、その部分が
トリガ電源２０の負電位側の端子にされており、従っ
て、二次巻線２２bの他端は、取付台４５を介して蒸着
材料４３に接続されている。On the other hand, one end of the secondary winding 22 b is connected to the positive potential terminal of the trigger power supply 20, and is therefore connected to the trigger electrode 42. The other end of the secondary winding 22b is connected to a terminal on the negative potential side of the pulse power supply 21, and that portion is used as a terminal on the negative potential side of the trigger power supply 20, so that the other end of the secondary winding 22b is , Is connected to the vapor deposition material 43 via the mounting base 45.
【００４３】上記のような構成の蒸着装置１０を用い、
蒸着材料４３を構成する物質の薄膜を形成する場合、真
空槽１内に基板８を配置し、内部を真空排気しながら基
板８を所定温度まで昇温させた後、アーク電源４７を起
動し、アノード電極３０と蒸着材料４３の間に１００Ｖ
程度の電圧を印加しておく(印加電圧の極性は、アノー
ド電極３０側が正電圧である)。その状態でパルス電源
２１を動作させ、一次巻線２２aの両端にパルス電圧を
印加する。Using the vapor deposition apparatus 10 configured as described above,
When forming a thin film of the substance constituting the vapor deposition material 43, the substrate 8 is placed in the vacuum chamber 1, the substrate 8 is heated to a predetermined temperature while evacuating the inside, and then the arc power supply 47 is activated. 100 V between the anode electrode 30 and the deposition material 43
(Applied voltage is positive on the anode electrode 30 side). In this state, the pulse power supply 21 is operated to apply a pulse voltage to both ends of the primary winding 22a.
【００４４】トランス２２内では、一次巻線２２aと二
次巻線２２bの巻数比は１０倍に設定されており、一次
巻線２２aの両端に印加された電圧の１０倍の電圧が二
次巻線２２bの両端に現れるようになっている。In the transformer 22, the turn ratio between the primary winding 22a and the secondary winding 22b is set to 10 times, and a voltage 10 times the voltage applied to both ends of the primary winding 22a is applied to the secondary winding. It appears at both ends of the line 22b.
【００４５】一次巻線２２aに印加されたパルス電圧の
ピーク値が２００Ｖであった場合、二次巻線２２bに
は、２ｋＶの電圧が現れ、その電圧がトリガ電極４２と
蒸着材料４３の間に印加される(極性はトリガ電極４２
側が正電圧である)。When the peak value of the pulse voltage applied to the primary winding 22a is 200 V, a voltage of 2 kV appears on the secondary winding 22b, and the voltage is applied between the trigger electrode 42 and the deposition material 43. Applied (the polarity is the trigger electrode 42
Side is positive voltage).
【００４６】２ｋＶの電圧値は、トリガ電極４２と蒸着
材料４３との間で、絶縁管４１表面上で沿面放電を発生
させるのに十分な大きさであり、従って、二次巻線２２
bに現れた電圧により、トリガ電極４２と蒸着材料４３
との間にトリガ放電が発生し、トリガ電極４２から蒸着
材料４３に向けてトリガ電流が流れる。The voltage value of 2 kV is large enough to cause a creeping discharge between the trigger electrode 42 and the vapor deposition material 43 on the surface of the insulating tube 41, and therefore, the secondary winding 22
b, the trigger electrode 42 and the vapor deposition material 43
A trigger discharge occurs between the trigger electrode 42 and the trigger electrode 42 and a trigger current flows from the trigger electrode 42 toward the deposition material 43.
【００４７】トリガ電流が流れ、蒸着材料４３が一部蒸
発すると、アノード電極３０内の圧力が上昇し、その結
果、アノード電極３０と蒸着材料４３の間にアーク放電
が誘起される。When a trigger current flows and the evaporation material 43 partially evaporates, the pressure in the anode electrode 30 increases, and as a result, an arc discharge is induced between the anode electrode 30 and the evaporation material 43.
【００４８】アーク放電によって流れるアーク電流は１
０００〜１５００Ａ程度の大電流であり、そのアーク電
流によって蒸着材料４３側面が溶融し、蒸着材料４３を
構成する物質が蒸気となって大量に放出される。その蒸
気中に含まれる正に帯電した微小粒子５１には、アーク
電流が流れる方向とは逆向きの力が加わるので、アーク
電極３０の開放口から真空槽１内に放出され、基板８方
向に向けて飛行し、その表面に付着して薄膜を成長させ
る。アーク電源４７が消耗し、アーク放電が終了する
と、アーク電源４７の回復を待ってトリガ放電を発生さ
せ、アーク放電を誘起させて薄膜を成長させる。The arc current flowing by the arc discharge is 1
The current is a large current of about 000 to 1500 A, and the side of the vapor deposition material 43 is melted by the arc current, and a large amount of the substance constituting the vapor deposition material 43 is released as vapor. The positively charged microparticles 51 contained in the vapor are subjected to a force in a direction opposite to the direction in which the arc current flows, and are released from the opening of the arc electrode 30 into the vacuum chamber 1 and toward the substrate 8. It flies toward and attaches to its surface to grow a thin film. When the arc power supply 47 is consumed and the arc discharge ends, a trigger discharge is generated after the recovery of the arc power supply 47, and the arc discharge is induced to grow the thin film.
【００４９】このように、必要な回数だけ繰り返しトリ
ガ放電を発生させ、薄膜が所望の膜厚に形成された後、
基板８を真空槽１外に搬出し、他の基板を搬入すると、
薄膜形成作業を続行することができる。As described above, the trigger discharge is repeatedly generated a required number of times, and after the thin film is formed to a desired thickness,
When the substrate 8 is carried out of the vacuum chamber 1 and another substrate is carried in,
The thin film forming operation can be continued.
【００５０】上記のトリガ電源２０を用いてトリガ放電
を発生させる場合、トリガ電源２０内にはコンデンサは
設けられておらず、共振回路は形成されていない。従っ
て、トリガ放電が生じた際に、トリガ電極４２に交流電
流は流れず、トリガ電極４２を構成する物質が蒸発する
こともない。When trigger discharge is generated using the trigger power supply 20, no capacitor is provided in the trigger power supply 20 and no resonance circuit is formed. Therefore, when the trigger discharge occurs, no AC current flows through the trigger electrode 42, and the material constituting the trigger electrode 42 does not evaporate.
【００５１】図２(ａ)は、上記トリガ電源２０を用いた
場合にトリガ電極４２に流れる電流を示したグラフであ
る。トリガ電極４３には、交流電流は流れていない。同
図(ｂ)は、従来技術のトリガ電源１２０を用いた場合の
トリガ電極１４２に流れる電流を示したグラフである。
コンデンサ１２２の容量の影響で共振回路が形成され、
トリガ放電の発生初期に、ごく短時間の間、トリガ電極
１４２に交流電流が流れていることが分かる。FIG. 2A is a graph showing a current flowing through the trigger electrode 42 when the trigger power supply 20 is used. No alternating current flows through the trigger electrode 43. FIG. 6B is a graph showing a current flowing through the trigger electrode 142 when the trigger power supply 120 of the related art is used.
A resonance circuit is formed under the influence of the capacitance of the capacitor 122,
It can be seen that an alternating current flows through the trigger electrode 142 for a very short time at the beginning of the occurrence of the trigger discharge.
【００５２】以上説明したように、本発明の蒸着装置を
用いれば、トリガ電極４３に交流電流が流れず、形成さ
れる薄膜中にトリガ電極４３を構成する物質が混入する
ことはない。As described above, when the vapor deposition apparatus of the present invention is used, no alternating current flows through the trigger electrode 43, and the material constituting the trigger electrode 43 does not enter the formed thin film.
【００５３】なお、上記トランス２２にはパルストラン
スを用いた。通常の電源用トランスは、一次巻線に印加
された正弦波を二次巻線に伝達するために設計されてい
るのに対し、パルストランスは、一次巻線２２aに印加
されたパルス電圧の波形を歪めずに二次巻線２２bに伝
達できるように設計されている。従って、トリガ電極４
２に加えられるパルス電圧のｄＶ／ｄｔの値が大きく、
トリガ放電が発生しやすくなっている。A pulse transformer was used as the transformer 22. Whereas a normal power transformer is designed to transmit a sine wave applied to a primary winding to a secondary winding, a pulse transformer is a waveform of a pulse voltage applied to a primary winding 22a. Is designed to be transmitted to the secondary winding 22b without distortion. Therefore, the trigger electrode 4
2. The value of dV / dt of the pulse voltage applied to 2 is large,
Trigger discharge is likely to occur.
【００５４】また、このトランス２２では、二次巻線２
２bにトリガ電流が流れるため、大電流を流せる設計に
なっている。このように、本発明のトランス２２では、
トリガ電極４２に高電圧のパルス電圧を印加でき、大電
流のトリガ電流を流せるものが適している。In the transformer 22, the secondary winding 2
Since a trigger current flows through 2b, it is designed to allow a large current to flow. Thus, in the transformer 22 of the present invention,
It is suitable that a high-voltage pulse voltage can be applied to the trigger electrode 42 and a large-current trigger current can flow.
【００５５】[0055]
【発明の効果】本発明によれば、同軸型真空アーク蒸着
源を用い、より高純度の薄膜を形成することが可能にな
る。According to the present invention, a thin film with higher purity can be formed using a coaxial vacuum arc evaporation source.
【図１】本発明の一例の蒸着装置FIG. 1 shows an example of a vapor deposition apparatus according to the present invention.
【図２】(ａ)：本発明の蒸着装置のトリガ電極に流れる
電流を示すグラフ (ｂ)：従来技術の蒸着装置のトリガ電極に流れる電流を
示すグラフ2A is a graph showing a current flowing through a trigger electrode of the vapor deposition apparatus of the present invention. FIG. 2B is a graph showing a current flowing through a trigger electrode of a conventional vapor deposition apparatus.
【図３】(ａ)、(ｂ)：同軸型真空アーク蒸着源の動作原
理を説明するための図FIGS. 3A and 3B are diagrams for explaining the operation principle of a coaxial vacuum arc evaporation source.
【図４】同軸型真空アーク蒸着源を用いた従来技術の蒸
着装置を説明するための図FIG. 4 is a view for explaining a conventional vapor deposition apparatus using a coaxial vacuum arc vapor deposition source.
１……真空槽 ３……同軸型真空アーク蒸着源 ８
……成膜対象物 １０……蒸着装置 ２０……トリ
ガ電源 ２１……パルス電源 ２２……トランス
２２a……一次巻線 ２２b……二次巻線 ３０…
…アノード電極４２……トリガ電極 ４３……蒸着材
料1. Vacuum chamber 3. Coaxial vacuum arc evaporation source 8
... Film formation target 10... Vapor deposition device 20... Trigger power supply 21... Pulse power supply 22.
22a: primary winding 22b: secondary winding 30
... Anode electrode 42 ... Trigger electrode 43 ... Evaporation material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山本 佳宏 神奈川県茅ヶ崎市萩園2500番地 日本真空 技術株式会社内 Ｆターム(参考） 3K084 AA03 AA14 BB03 BC05 BD04 4K029 BD01 CA01 CA03 DB08 DB17 DD06 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Yoshihiro Yamamoto 2500 Hagizono, Chigasaki-shi, Kanagawa Japan Vacuum Engineering Co., Ltd. F-term (reference) 3K084 AA03 AA14 BB03 BC05 BD04 4K029 BD01 CA01 CA03 DB08 DB17 DD06
Claims (2)
加した状態で、トリガ電極と前記蒸着材料との間にトリ
ガ放電を発生させ、前記アノード電極と前記蒸着材料と
の間にアーク放電を誘起させ、前記蒸着材料を蒸発さ
せ、成膜対象物表面に薄膜を形成する蒸着装置であっ
て、 一次巻線と二次巻線とが磁気結合されたトランスと、 パルス電圧を発生させるパルス電源とを有し、 前記一次巻線に前記パルス電圧を印加し、前記二次巻線
に誘起された電圧を前記トリガ電極と前記蒸着材料との
間に印加し、前記トリガ放電を発生させるように構成さ
れたことを特徴とする蒸着装置。1. A trigger discharge is generated between a trigger electrode and said deposition material while a voltage is applied between said anode electrode and said deposition material, and an arc discharge is generated between said anode electrode and said deposition material. And a vapor-deposition device for evaporating the vapor-deposition material to form a thin film on the surface of a film-forming target, comprising: a transformer in which a primary winding and a secondary winding are magnetically coupled; and a pulse for generating a pulse voltage. A power supply; applying the pulse voltage to the primary winding; applying a voltage induced in the secondary winding between the trigger electrode and the deposition material to generate the trigger discharge. A vapor deposition apparatus characterized in that:
前記二次巻線が、前記一次巻線に印加された電圧を増幅
するように設定されていることを特徴とする請求項１記
載の蒸着装置。2. The winding ratio of the primary winding and the secondary winding is as follows:
The vapor deposition apparatus according to claim 1, wherein the secondary winding is set to amplify a voltage applied to the primary winding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17194298A JP4049891B2 (en) | 1998-06-18 | 1998-06-18 | Vapor deposition equipment that generates a trigger discharge using a transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17194298A JP4049891B2 (en) | 1998-06-18 | 1998-06-18 | Vapor deposition equipment that generates a trigger discharge using a transformer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000001770A true JP2000001770A (en) | 2000-01-07 |
| JP4049891B2 JP4049891B2 (en) | 2008-02-20 |
Family
ID=15932675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17194298A Expired - Lifetime JP4049891B2 (en) | 1998-06-18 | 1998-06-18 | Vapor deposition equipment that generates a trigger discharge using a transformer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4049891B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009242825A (en) * | 2008-03-28 | 2009-10-22 | Ulvac Japan Ltd | Method for embedding metallic material using coaxial vacuum arc vapor deposition source |
| JP2010095801A (en) * | 2010-02-01 | 2010-04-30 | Ulvac Japan Ltd | Evaporation source |
| CN107837989A (en) * | 2017-12-08 | 2018-03-27 | 沈阳天通电气有限公司 | The vacuum of radiator for transformer inner chamber draws paint and vacuum quick drying paint equipment and technique |
-
1998
- 1998-06-18 JP JP17194298A patent/JP4049891B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009242825A (en) * | 2008-03-28 | 2009-10-22 | Ulvac Japan Ltd | Method for embedding metallic material using coaxial vacuum arc vapor deposition source |
| JP2010095801A (en) * | 2010-02-01 | 2010-04-30 | Ulvac Japan Ltd | Evaporation source |
| CN107837989A (en) * | 2017-12-08 | 2018-03-27 | 沈阳天通电气有限公司 | The vacuum of radiator for transformer inner chamber draws paint and vacuum quick drying paint equipment and technique |
| CN107837989B (en) * | 2017-12-08 | 2023-03-10 | 沈阳天通电气有限公司 | Vacuum paint sucking and vacuum quick-drying equipment and process for radiator inner cavity of transformer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4049891B2 (en) | 2008-02-20 |
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