JPH0241169Y2 - - Google Patents
Info
- Publication number
- JPH0241169Y2 JPH0241169Y2 JP7272583U JP7272583U JPH0241169Y2 JP H0241169 Y2 JPH0241169 Y2 JP H0241169Y2 JP 7272583 U JP7272583 U JP 7272583U JP 7272583 U JP7272583 U JP 7272583U JP H0241169 Y2 JPH0241169 Y2 JP H0241169Y2
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- high frequency
- power source
- electrode
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【考案の詳細な説明】
本案は高周波電源側と負荷側の整合状態を検出
する手段を備えたプラズマ発生装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma generator equipped with means for detecting a matching state between a high frequency power supply side and a load side.
最近、プラズマを利用してスパツタリングやエ
ツチングやプレーテイング等を行なう装置が脚光
を浴びている。第１図はこの様なプラズマ発生装
置の一例として示した高周波イオンプレーテイン
グ装置の概略図である。１は排気室で、該排気室
内の適宜な位置に、基板２、蒸発源３、高周波コ
イル状電極４が夫々配置される。前記基板２には
直流電源５から負の直流電圧が印加され、前記蒸
発源３をなすボードには加熱用交流電源６から加
熱用交流電力が印加される。又、前記高周波コイ
ル状電極４には高周波電源側と負荷側のインピー
ダンスの整合を取る為の整合回路７を介して高周
波電源８から高周波電力が印加される。この様な
装置において、先ず排気装置９により排気室１内
を10-5Torr程度に排気し、続いてガス供給装置
１０から、例えばアルゴンガスを排気室１内に導
入し、排気室１内を10-3Torr程度にする。この
状態で高周波電極４に高周波電源８から高周波電
力を印加すると、該電極の近傍にプラズマが発生
する。そして、加熱用交流電源６からボードに加
熱用電力を印加し、蒸発材を蒸発させると、蒸発
粒子は前記プラズマ中でイオン化し、該イオンは
電源５による加速電界により加速されて基板２に
衝突し、該基板２に膜を形成する。 Recently, devices that use plasma to perform sputtering, etching, plating, etc. have been in the spotlight. FIG. 1 is a schematic diagram of a high frequency ion plating apparatus shown as an example of such a plasma generating apparatus. Reference numeral 1 denotes an exhaust chamber, and a substrate 2, an evaporation source 3, and a high-frequency coil-shaped electrode 4 are arranged at appropriate positions within the exhaust chamber. A negative DC voltage is applied to the substrate 2 from a DC power supply 5, and heating AC power is applied to the board forming the evaporation source 3 from a heating AC power supply 6. Further, high frequency power is applied to the high frequency coiled electrode 4 from a high frequency power source 8 via a matching circuit 7 for matching the impedances on the high frequency power source side and the load side. In such a device, first, the inside of the exhaust chamber 1 is evacuated to about 10 -5 Torr by the exhaust device 9, and then, for example, argon gas is introduced into the exhaust chamber 1 from the gas supply device 10, and the inside of the exhaust chamber 1 is evacuated. Set it to about 10 -3 Torr. When high frequency power is applied from the high frequency power supply 8 to the high frequency electrode 4 in this state, plasma is generated near the electrode. Then, when heating power is applied to the board from the heating AC power source 6 to evaporate the evaporation material, the evaporated particles are ionized in the plasma, and the ions are accelerated by the accelerating electric field from the power source 5 and collide with the substrate 2. Then, a film is formed on the substrate 2.
さて、斯くの如きプラズマ発生装置において
は、負荷側での変化（例、圧力、ガスの量や種
類、蒸発材の種類や蒸発量）に応じて、前記整合
回路７によつて高周波電源側と負荷側の整合が取
られているが、負荷側において比較的大きな変化
があつた場合には整合を取るのは難しく、不整合
の程度が大きいと、前記高周波電源側の損失が大
きく又、前記負荷に掛る高周波電力も大きく変化
するので、プラズマ状態も大きく変化し、前記基
板２上の成膜状態が劣化する。 Now, in such a plasma generator, the matching circuit 7 connects the high-frequency power source and Matching is achieved on the load side, but it is difficult to match when there is a relatively large change on the load side, and if the degree of mismatch is large, the loss on the high frequency power supply side is large, and the loss on the high frequency power supply side is large. Since the high frequency power applied to the load also changes greatly, the plasma state also changes greatly, and the state of the film formed on the substrate 2 deteriorates.
本考案はこの様な点を解決することを目的とし
たものである。 The purpose of the present invention is to solve these problems.
本考案は、排気室内に高周波電極を配置し、高
周波電源からの高周波電力を整合回路を介して該
電極に印加することにより該排気室内にプラズマ
を発生出来る様になした装置において、前記高周
波電源と前記電極間に存在する反射電力を検出す
る手段、該反射電力の値が予め設定した電力値以
上である状態が続く時間が予め設定した時間を越
えた時、前記高周波電源をオフさせる信号を発す
る手段を設けたプラズマ発生装置を提供するもの
である。 The present invention provides an apparatus in which a high-frequency electrode is arranged in an exhaust chamber, and plasma can be generated in the exhaust chamber by applying high-frequency power from a high-frequency power source to the electrode through a matching circuit. and a means for detecting reflected power existing between the electrodes, and a means for detecting reflected power existing between the electrodes, and a means for generating a signal to turn off the high frequency power supply when a state in which the value of the reflected power continues to be equal to or higher than a preset power value exceeds a preset time. The present invention provides a plasma generation device equipped with a means for generating plasma.
第２図は本考案の一実施例を示した高周波イオ
ンプレーテイング装置の概略図である。図中第１
図にて用いた番号及び記号と同一番号及び記号を
付したものは同一構成要素を示す。図中１１は、
高周波電源８から整合回路７を介して負荷（電極
４）に供給される入射電力と該負荷からの反射電
力を検出する方向性結合器である。１２は該方向
性結合器が検出した反射電力を取りだして比較回
路１３に送る反射電力計である。該比較回路には
予め基準値が設定されており検出された反射電力
を基準値と比較し、基準値より小さい時、特に信
号を発しないが、大きい時、信号を発生して不感
回路１４へ送る。前記比較回路１１に設定される
基準値は、次の様にして決められる。即ち、高周
波電源側と負荷側の不整合の程度と反射電力の大
きさは対応しており、この不整合の程度があるレ
ベルを越えると、前記した高周波電源側の損失が
増大したり、基板上の成膜状態が悪化する。そこ
で、このレベルにある時の反射電力値を基準値と
して設定する。前記不感回路１４は、該比較回路
から信号が連続的に入射され、その入射時間が予
め設定された時間を越えたとき信号を発し、制御
回路１５へ送る。該設定時間は何らかの原因で、
瞬時反射電力が基準値を越える場合は問題がない
ものとし、信号が頻繁に発せられることを防ぐ為
に設定される時間で、前記高周波電源８や前記成
膜状態にあまり影響の出ない時間、例えば数秒〜
10秒が選ばれる。前記制御回路１５は信号が入る
と、前記高周波電源８と表示装置１６に信号を送
り、前記高周波電源８をオフの状態にし、前記表
示装置１６に警報を発生させる。尚、警報の代り
に光の点滅をさせる様にしてもよい。 FIG. 2 is a schematic diagram of a high frequency ion plating apparatus showing an embodiment of the present invention. 1st in the diagram
Items with the same numbers and symbols as those used in the figures indicate the same components. 11 in the figure is
This is a directional coupler that detects the incident power supplied from the high frequency power source 8 to the load (electrode 4) via the matching circuit 7 and the reflected power from the load. Reference numeral 12 denotes a reflected power meter that extracts the reflected power detected by the directional coupler and sends it to the comparator circuit 13. A reference value is set in the comparison circuit in advance, and the detected reflected power is compared with the reference value, and when it is smaller than the reference value, no signal is emitted, but when it is larger, a signal is generated and sent to the insensitive circuit 14. send. The reference value set in the comparison circuit 11 is determined as follows. In other words, the degree of mismatch between the high-frequency power supply side and the load side corresponds to the magnitude of the reflected power, and when the degree of mismatch exceeds a certain level, the loss on the high-frequency power supply side described above increases, and the substrate The condition of the film formed above deteriorates. Therefore, the reflected power value at this level is set as the reference value. The insensitive circuit 14 receives a signal continuously from the comparator circuit, and when the input time exceeds a preset time, it emits a signal and sends it to the control circuit 15. For some reason, the set time may
If the instantaneous reflected power exceeds the reference value, it is assumed that there is no problem, and the time is set to prevent the signal from being emitted frequently, and the time does not have much influence on the high frequency power source 8 or the film forming state. For example, a few seconds
10 seconds is selected. When the control circuit 15 receives the signal, it sends a signal to the high frequency power source 8 and the display device 16, turns off the high frequency power source 8, and causes the display device 16 to generate an alarm. Note that a flashing light may be used instead of the alarm.
斯くの如き装置において、排気装置９により排
気室１内を10-5Torr程度に排気し、次にガス供
給装置１０からアルゴンガスを入れて、
10-3Torr程度にする。この状態で、高周波電極
４に高周波電源８から高周波電力を印加すると該
電極の近傍にプラズマが発生する。そして、加熱
用交流電源６からボードに加熱用電力を印加し、
蒸発材を蒸発させると、蒸発粒子は前記プラズマ
中でイオン化し、基板２に膜を形成する。この
時、反射電力計１２は方向性結合器１１が検出し
た反射電力を取り出し、比較回路１３へ送る。該
比較回路は該反射電力を基準値と比較し、該反射
電力が基準値より大きい場合、制御回路１５に信
号を送るので、該制御回路は前記高周波電源８を
オフの状態にし、同時に前記表示装置１４に警報
を発生させる。 In such an apparatus, the inside of the exhaust chamber 1 is evacuated to about 10 -5 Torr by the exhaust device 9, and then argon gas is introduced from the gas supply device 10.
Set it to about 10 -3 Torr. In this state, when high frequency power is applied from the high frequency power supply 8 to the high frequency electrode 4, plasma is generated near the electrode. Then, heating power is applied to the board from the heating AC power supply 6,
When the evaporation material is evaporated, the evaporated particles are ionized in the plasma and form a film on the substrate 2. At this time, the reflected power meter 12 extracts the reflected power detected by the directional coupler 11 and sends it to the comparison circuit 13. The comparison circuit compares the reflected power with a reference value, and if the reflected power is greater than the reference value, it sends a signal to the control circuit 15, so that the control circuit turns off the high frequency power source 8 and at the same time turns off the display. The device 14 generates an alarm.
本考案によれば、高周波電源側の損失の増大や
基板上の成膜状態の劣化を最小に押えることが出
来る。 According to the present invention, it is possible to minimize the increase in loss on the high frequency power source side and the deterioration of the film formation state on the substrate.
第１図はプラズマ発生装置の一例として示した
高周波イオンプレーテイング装置の概略図、第２
図は本考案の一実施例を示した高周波イオンプレ
ーテイング装置の概略図である。
１：排気室、４：高周波電極、７：整合回路、
８：高周波電源、１１：方向性結合器、１２：反
射電力計、１３：比較回路、１４：不感回路、１
５：制御回路、１６：表示装置。
Figure 1 is a schematic diagram of a high-frequency ion plating device shown as an example of a plasma generation device;
The figure is a schematic diagram of a high frequency ion plating apparatus showing an embodiment of the present invention. 1: Exhaust chamber, 4: High frequency electrode, 7: Matching circuit,
8: High frequency power supply, 11: Directional coupler, 12: Reflected power meter, 13: Comparison circuit, 14: Insensitive circuit, 1
5: Control circuit, 16: Display device.
Claims (1)
らの高周波電力を整合回路を介して該電極に印加
することにより該排気室内にプラズマを発生出来
る様になした装置において、前記高周波電源と前
記電極間に存在する反射電力を検出する手段、該
反射電力の値が予め設定した電力値以上である状
態が続く時間が予め設定した時間を越えた時、前
記高周波電源をオフさせる信号を発する手段を設
けたプラズマ発生装置。 In an apparatus in which a high-frequency electrode is disposed in an exhaust chamber and plasma can be generated in the exhaust chamber by applying high-frequency power from a high-frequency power source to the electrode via a matching circuit, there is a gap between the high-frequency power source and the electrode. means for detecting the reflected power present in the RF power source, and means for emitting a signal to turn off the high frequency power source when the time period in which the value of the reflected power continues to be equal to or higher than a preset power value exceeds a preset time. plasma generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7272583U JPS59178899U (en) | 1983-05-16 | 1983-05-16 | plasma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7272583U JPS59178899U (en) | 1983-05-16 | 1983-05-16 | plasma generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59178899U JPS59178899U (en) | 1984-11-29 |
| JPH0241169Y2 true JPH0241169Y2 (en) | 1990-11-01 |
Family
ID=30202859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7272583U Granted JPS59178899U (en) | 1983-05-16 | 1983-05-16 | plasma generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59178899U (en) |
-
1983
- 1983-05-16 JP JP7272583U patent/JPS59178899U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59178899U (en) | 1984-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5541677B2 (en) | Vacuum processing apparatus, bias power supply, and operation method of vacuum processing apparatus | |
| KR100397137B1 (en) | Ion Plating Device and Ion Plating Method | |
| TW466618B (en) | Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate | |
| JP4679004B2 (en) | Arc evaporation source apparatus, driving method thereof, and ion plating apparatus | |
| JP3224443B2 (en) | Helicon wave plasma processing equipment | |
| JPS6393881A (en) | Plasma treatment apparatus | |
| JP3706027B2 (en) | Plasma processing method | |
| JPS6130665A (en) | Sputtering device | |
| WO1998037256A1 (en) | Power supply device for sputtering and sputtering device using the same | |
| DE59602601D1 (en) | Device for coating substrates in a vacuum | |
| JPH05222531A (en) | Method and apparatus for coating substrate | |
| JPH0241169Y2 (en) | ||
| JPS63155728A (en) | Plasma processor | |
| US7316764B2 (en) | System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal | |
| JP2737377B2 (en) | Plasma processing equipment | |
| JPH0241168Y2 (en) | ||
| JPH0732077B2 (en) | High frequency generator | |
| JPH08138595A (en) | Ion source | |
| JPS6135561Y2 (en) | ||
| JPH0766918B2 (en) | Plasma processing device | |
| JP3038828B2 (en) | Plasma processing method | |
| JPS6324068A (en) | Continuous vacuum deposition plating device | |
| Dudin et al. | Ion energy cost in a combined inductive-capacitive rf discharge | |
| JPS61231172A (en) | Method and apparatus for sputtering | |
| US4419380A (en) | Method for ion-aided coating on electrically insulating substrates |