JPS61207019A - Rotary coating device - Google Patents
Rotary coating deviceInfo
- Publication number
- JPS61207019A JPS61207019A JP4880885A JP4880885A JPS61207019A JP S61207019 A JPS61207019 A JP S61207019A JP 4880885 A JP4880885 A JP 4880885A JP 4880885 A JP4880885 A JP 4880885A JP S61207019 A JPS61207019 A JP S61207019A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- receiving plate
- exhaust pipe
- saucer
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 29
- 238000000576 coating method Methods 0.000 title claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 239000002904 solvent Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000004140 cleaning Methods 0.000 abstract description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 abstract description 3
- 239000008096 xylene Substances 0.000 abstract description 3
- 239000012530 fluid Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 241001092070 Eriobotrya Species 0.000 description 1
- 235000009008 Eriobotrya japonica Nutrition 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程における感光性樹脂やポ
リイミド樹脂等の塗布に用いる回転塗布装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a spin coating device used for coating photosensitive resin, polyimide resin, etc. in the manufacturing process of semiconductor devices.
半導体装置の製造工程においては、絶り＃層や金属層等
の種々のパターンを形成する九めにホトリソグラフィ技
術が用いられているか、そのためには、これら絶縁膚や
金属層等が形成されたウニノ１上に感光性樹脂（ホトレ
ジスト）ｔ−塗布し、均一な厚さの薄膜を形成すること
が必要である。In the manufacturing process of semiconductor devices, photolithography technology is used to form various patterns such as insulating layers and metal layers. It is necessary to apply a photosensitive resin (photoresist) on Unino 1 to form a thin film of uniform thickness.
ホトレジスト等の薄膜を形成すゐ従来の回転塗布装置の
一例をｌ［２図により説明する。An example of a conventional spin coating apparatus for forming a thin film of photoresist or the like will be explained with reference to FIG.
第２図において、シリコンウニノＳ１はスピンナー−２
に真空吸着されており、そしてこのスピンナー２はモー
タ３に連結されている。In Figure 2, Silicon Unino S1 is spinner-2
The spinner 2 is vacuum-adsorbed to the spinner 2, and the spinner 2 is connected to a motor 3.
スピンナー２の周囲には、余剰の塗布液を受ける受皿４
が設けられ、受皿４の底壁には排気装置に連結された排
気管５が取付けられている。なお、６は塗布液滴下用ノ
ズルである。次にその動作について説明する。A saucer 4 is provided around the spinner 2 to receive excess coating liquid.
An exhaust pipe 5 connected to an exhaust device is attached to the bottom wall of the saucer 4. Note that 6 is a nozzle for dropping the coating liquid. Next, its operation will be explained.
まず、塗布液滴下用ノズル６より１例えば一定量のホト
レジストＲ１がシリコンウェハ１上に滴下されると、ホ
トレジストＲ１は、最初モータ３の低速回転によりウェ
ハ１の全面に引延ばされ、その後数千ｒｐｍの高速回転
により余剰のホトレジストが飛散し、ウェハ１上には均
一な薄いホトレ ７ジスト膜が形成される。First, when a certain amount of photoresist R1, for example, is dropped onto the silicon wafer 1 from the coating liquid dropping nozzle 6, the photoresist R1 is first spread over the entire surface of the wafer 1 by the low speed rotation of the motor 3, and then several times. Excess photoresist is scattered by the high-speed rotation of 1,000 rpm, and a uniform thin photoresist film is formed on the wafer 1.
飛散したホトレジストは、軽い粒子は排気流ｆにより、
そして液状のものは受皿から排気管を通って外部に導び
かれるようになっている。The light particles of the scattered photoresist are removed by the exhaust flow f.
The liquid is led from the saucer to the outside through an exhaust pipe.
しかしながら、ホトレジストは、一般に揮発性の溶剤を
含む粘性の高い液体であるため、長時間の使用後には受
皿や排気管の側壁等に余剰のホトレジス）Ｒ，、Ｒ，が
付着し、凝固して排気量に悪影響を及ぼす欠点があった
。However, since photoresist is generally a highly viscous liquid containing a volatile solvent, after long-term use, excess photoresist (R) adheres to the saucer, the side wall of the exhaust pipe, etc., and solidifies. There were drawbacks that negatively affected displacement.
排気量はホトレジスト塗布時の溶剤の揮発速度を決める
ものであり、ホトレジストの膜厚の大小に大きな影響を
与える。また、排気量が少くなると飛散したホトレジス
トの粒子がウェハｌの表面に付着し、ホトレジスト膜を
不均一としてパターンの断線などの原因となる不都合を
有する。従って、受皿１！−はずし、受皿と排気管に付
着し凝固したホトレジス）Ｒｚ、 Ｒ１３ｔ”溶剤でと
かし除去する作業を頻繁に行う必要があった。The exhaust amount determines the volatilization rate of the solvent during photoresist coating, and has a large effect on the thickness of the photoresist film. Furthermore, if the exhaust volume is reduced, the scattered photoresist particles will adhere to the surface of the wafer 1, making the photoresist film non-uniform and causing pattern breakage. Therefore, saucer 1! - It was necessary to remove the solidified photoresist (Rz, R13t) that adhered to the saucer and exhaust pipe frequently by combing it out with a solvent.
本発明の目的は、上記欠点を除去し、長時間使用しても
排気流に変化がなく、受皿や排気管の清掃作業が少くて
すむ回転塗布装置を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a rotary coating device that eliminates the above-mentioned drawbacks, has no change in exhaust flow even after long-term use, and requires less cleaning of the saucer and exhaust pipe.
本発明の回転塗布装置は、塗布液が塗布される基板を保
持し回転するスピンナーと、底壁と底壁の外周にスピン
ナーを包囲するように形成された外壁及びスピンナーの
下部に位置し底壁の内周に突出して形成された内壁とか
ら構成され余剰塗布液溜を形成する受皿と、この受皿の
底壁を貫通して連結されその頂面が底壁面より高くかつ
内壁の頂面より低く位置するように固定された排気管と
、塗布液の溶剤を受皿中に注入するノズルとを含んで構
成される。The spin coating device of the present invention includes a spinner that holds and rotates a substrate to which a coating liquid is applied, a bottom wall, an outer wall formed on the outer periphery of the bottom wall to surround the spinner, and a bottom wall located below the spinner. an inner wall protruding from the inner periphery of the container, and a saucer forming a surplus coating liquid reservoir; It includes an exhaust pipe that is fixed in position, and a nozzle that injects the solvent of the coating liquid into the saucer.
本発明によれば、飛散し九余剰の塗布液は受皿に溜り、
ここで注入された溶剤により溶され、完全な液体となっ
て排気管より除去される。従って受皿や排気管には塗布
液が付着し凝固すること赤ないため、回転塗布装置の排
気流は変化することがなく、また受皿や排気管の清掃回
数も少なくてすむ。According to the present invention, the scattered coating liquid accumulates in the saucer,
It is dissolved by the injected solvent, becomes a complete liquid, and is removed from the exhaust pipe. Therefore, since the coating liquid does not adhere to and solidify on the saucer or exhaust pipe, the exhaust flow of the rotary coating device does not change, and the number of times the saucer or exhaust pipe is cleaned can be reduced.
次に本発明の実施例を図面を用いて説明する。 Next, embodiments of the present invention will be described using the drawings.
第１図は本発明の一実施例の要部縦断面図である。FIG. 1 is a longitudinal sectional view of a main part of an embodiment of the present invention.
第１図において、シリコンウェハｌを吸着保持するスピ
ンナー２はモータ３に連結しており２回転して塗布液滴
下用ノズル６から滴下されたホトレジス）Ｒ１’ｔシリ
コンウェハ１表面に均一に塗布できるようになっている
。In Fig. 1, a spinner 2 that suctions and holds a silicon wafer 1 is connected to a motor 3, and rotates twice to uniformly coat the surface of the silicon wafer 1 with photoresist dripped from a coating liquid dripping nozzle 6. It looks like this.
スピンナー２の周囲には、底壁４ａ と、スピンナー２
を包囲するように底壁４ａの外周に形成された外壁４ｂ
及びスピンナー２の下部に位置し底壁４ａの内周に突出
して形成された内壁４ｃとから構成された受皿４が設け
られている。そしてこれら外壁４ｂ、底壁４ａ及び内壁
４Ｃとで余剰のホトレジスト溜を形成している。Around the spinner 2, there is a bottom wall 4a and a spinner 2.
An outer wall 4b formed around the outer periphery of the bottom wall 4a to surround the
and an inner wall 4c located below the spinner 2 and protruding from the inner periphery of the bottom wall 4a. The outer wall 4b, the bottom wall 4a, and the inner wall 4C form a surplus photoresist reservoir.
また、受皿４の底壁４ａを貫通して排気装置に連結する
排気管５が設けられているが、この排気管５の先端の頂
面５ａは、受皿４の底壁４ａの面より高く、かつ内壁４
Ｃの頂面４ｄ工り低く位置するように固定されている。Further, an exhaust pipe 5 is provided which penetrates the bottom wall 4a of the saucer 4 and connects to the exhaust device, but the top surface 5a at the tip of the exhaust pipe 5 is higher than the surface of the bottom wall 4a of the saucer 4. And inner wall 4
The top surface 4d of C is fixed so as to be located low.
更に、受皿４の外壁４ｂＫはホトレジストの溶剤、（例
えば、キシレン、アセトン、メチルエチルケトンなど）
を受皿４内に注入するノズル７が設けられてお９、受皿
４内に溜ったホトレジストを溶し、排気管に流し出すに
十分な溶剤が、例えば自動的に注入されるようになって
いる。Furthermore, the outer wall 4bK of the saucer 4 is coated with a photoresist solvent (for example, xylene, acetone, methyl ethyl ketone, etc.).
A nozzle 7 is provided for injecting the photoresist into the saucer 4. Sufficient solvent is, for example, automatically injected to dissolve the photoresist accumulated in the saucer 4 and flush it out into the exhaust pipe. .
次に、このように構成された実施例の作用について説明
する。Next, the operation of the embodiment configured as described above will be explained.
シリコンウェハ１上に滴下されたホトレジストＲ１は、
モータ３の高速回転の遠心力によりシリコンウェハ１の
周囲に飛ばされる。この時、飛散した余剰のホトレジス
トは受皿４の外壁４ｂに付着してたれ落ちて、受皿４が
形成する余剰塗布液溜に溜る。The photoresist R1 dropped onto the silicon wafer 1 is
It is thrown around the silicon wafer 1 by the centrifugal force of the high-speed rotation of the motor 3. At this time, the scattered surplus photoresist adheres to the outer wall 4b of the saucer 4, drips down, and collects in a surplus coating liquid reservoir formed by the saucer 4.
また、飛散したホトレジストの比較的軽い粒子は、排気
流ｆによって運ばれ、排気管５を経て外部に排出される
。Further, the relatively light particles of the scattered photoresist are carried by the exhaust flow f and are discharged to the outside through the exhaust pipe 5.
一万、この間にキシレン等のホトレジストの溶剤が自動
的に溶剤ノズル７より余剰塗布液溜に注入される。この
ため、余剰塗布液溜中のホトレジストＲ４は凝固するこ
となく液体の状態で排気管５の頂面５ａ上をオーバーフ
ローし、排気管５より外部に排出される。During this time, a photoresist solvent such as xylene is automatically injected from the solvent nozzle 7 into the excess coating liquid reservoir. Therefore, the photoresist R4 in the surplus coating liquid reservoir overflows on the top surface 5a of the exhaust pipe 5 in a liquid state without solidifying, and is discharged from the exhaust pipe 5 to the outside.
このように余剰のホトレジストは、粒子又は液体として
外部に排出されるため、受皿４や排気管５の内部に付着
して凝固することがない。このため、排気流ｆの流量は
変化することがなく、シリコンウェハ１上のホトレジス
ト膜の乾燥時間も一定となり、再現性の良いホトレジス
ト膜が形成できる。そして、ホトレジストの軽い粒子の
はね返りによるシリコンウェハ１表面の汚染もなくなり
信頼性の高いパターンを作ることができる。In this way, the excess photoresist is discharged to the outside as particles or liquid, so that it does not adhere to the inside of the saucer 4 or the exhaust pipe 5 and solidify. Therefore, the flow rate of the exhaust flow f does not change, and the drying time of the photoresist film on the silicon wafer 1 also remains constant, making it possible to form a photoresist film with good reproducibility. Further, the surface of the silicon wafer 1 is no longer contaminated by the rebound of light photoresist particles, and a highly reliable pattern can be produced.
更に、受皿４や排気管５へのホトレジストの付着がなく
なるため、これらの清掃回数は従来の１１５以下となり
、清掃時間の低減と稼動率の同上に寄与する。Furthermore, since the photoresist does not adhere to the saucer 4 or the exhaust pipe 5, the number of times these are cleaned becomes less than 115 times compared to the conventional method, contributing to a reduction in cleaning time and an increase in operating rate.
上記賽施例においては、塗布物としてホトレジスト膜用
いる場合について述べたが、半導体装置の製造工程で用
いられるオルガノシリカ溶液（？ｌｌｌ二剤：ルアルコ
ール）やポリイミド樹脂（溶剤：メチルセルソルブ）等
の塗布の場合においても本発明の回転塗布装置を用いる
ことが可能であり、ホトレジストの場合と同様の効果ｔ
Ｗする。In the above example, the case where a photoresist film is used as a coating material is described, but organosilica solution (?llll two-component: alcohol), polyimide resin (solvent: methyl cellosolve), etc. used in the manufacturing process of semiconductor devices, etc. It is possible to use the spin coating apparatus of the present invention even in the case of coating, and the same effect as in the case of photoresist can be obtained.
W.
以上詳細に説明したように２本発明によれば。 According to two aspects of the present invention, as described in detail above.
長時間使用しても余剰の塗布物が受皿や排気管に付着し
ないため安定した排気状態を保つことができ、また清掃
回数が少なくてすむ回転塗布装置が得られるので、半導
体装置の製造効′５＄ヲ高める効果がある。Even if used for a long time, excess coating material does not adhere to the saucer or exhaust pipe, so stable exhaust conditions can be maintained, and a rotary coating device that requires less cleaning can be obtained, increasing the efficiency of manufacturing semiconductor devices. It has the effect of increasing the amount by $5.
算１図は本発明の一実施例の縦断面図、第２図は従来の
回転塗布装置の一例を説明する九めの因である。
１・・・・φ・ノリコンウェハ、２・・・…スピンナー
、３・・・・・・モータ、４・・・・・・受皿、４ａ・
・・・・・底壁、 ４ｂ・・・・・・外壁、４Ｃ・・
・・・・内壁、４ｄ・・・・・・内壁の頂面、５・・・
・・・排気管、５ａ・・・・・・排気管の頂面、６・・
・・・・塗布液滴下用ノズル、７・・・・・・溶剤用ノ
ズル。
峯１杷
茅２紹Figure 1 is a vertical sectional view of an embodiment of the present invention, and Figure 2 is a ninth point illustrating an example of a conventional spin coating device. 1...φ Noricon wafer, 2...Spinner, 3...Motor, 4...Saucer, 4a...
...Bottom wall, 4b...Outer wall, 4C...
...Inner wall, 4d...Top surface of inner wall, 5...
...Exhaust pipe, 5a...Top surface of exhaust pipe, 6...
... Nozzle for dropping coating liquid, 7 ... Nozzle for solvent. Mine 1 loquat 2 introduction
Claims (1)
、底壁と底壁の外周に前記スピンナーを包囲するように
形成された外壁及び前記スピンナーの下部に位置し底壁
の内周に突出して形成された内壁とから構成され余剰塗
布液溜を形成する受皿と、該受皿の底壁を貫通して連結
されその頂面が底壁面より高くかつ内壁の頂面より低く
位置するように固定された排気管と、塗布液の溶剤を前
記受皿に注入するノズルとを含むことを特徴とする回転
塗布装置。a spinner that holds and rotates a substrate to which a coating liquid is applied; a bottom wall; an outer wall formed on the outer periphery of the bottom wall to surround the spinner; and a spinner located below the spinner and protruding from the inner periphery of the bottom wall. and a saucer configured to form a surplus coating liquid reservoir, the saucer being connected through the bottom wall of the saucer and fixed such that its top surface is located higher than the bottom wall surface and lower than the top surface of the inner wall. 1. A rotary coating device, comprising: an exhaust pipe having a discharge pipe; and a nozzle for injecting a solvent of a coating liquid into the saucer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4880885A JPS61207019A (en) | 1985-03-12 | 1985-03-12 | Rotary coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4880885A JPS61207019A (en) | 1985-03-12 | 1985-03-12 | Rotary coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61207019A true JPS61207019A (en) | 1986-09-13 |
Family
ID=12813506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4880885A Pending JPS61207019A (en) | 1985-03-12 | 1985-03-12 | Rotary coating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61207019A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02116730U (en) * | 1989-03-07 | 1990-09-19 | ||
| JPH02249225A (en) * | 1989-03-22 | 1990-10-05 | Fujitsu Ltd | Resist coating apparatus |
| US5095848A (en) * | 1989-05-02 | 1992-03-17 | Mitsubishi Denki Kabushiki Kaisha | Spin coating apparatus using a tilting chuck |
| US5264246A (en) * | 1989-05-02 | 1993-11-23 | Mitsubishi Denki Kabushiki Kaisha | Spin coating method |
-
1985
- 1985-03-12 JP JP4880885A patent/JPS61207019A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02116730U (en) * | 1989-03-07 | 1990-09-19 | ||
| JPH02249225A (en) * | 1989-03-22 | 1990-10-05 | Fujitsu Ltd | Resist coating apparatus |
| US5095848A (en) * | 1989-05-02 | 1992-03-17 | Mitsubishi Denki Kabushiki Kaisha | Spin coating apparatus using a tilting chuck |
| US5264246A (en) * | 1989-05-02 | 1993-11-23 | Mitsubishi Denki Kabushiki Kaisha | Spin coating method |
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