JPS58200537A - Applying method for resist - Google Patents

Applying method for resist

Info

Publication number
JPS58200537A
JPS58200537A JP8384382A JP8384382A JPS58200537A JP S58200537 A JPS58200537 A JP S58200537A JP 8384382 A JP8384382 A JP 8384382A JP 8384382 A JP8384382 A JP 8384382A JP S58200537 A JPS58200537 A JP S58200537A
Authority
JP
Japan
Prior art keywords
wafer
resist
nozzle
coating method
resist coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8384382A
Other languages
Japanese (ja)
Inventor
Yasuharu Sato
康春 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8384382A priority Critical patent/JPS58200537A/en
Publication of JPS58200537A publication Critical patent/JPS58200537A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the creeping of the resist and the adhesion of a fog-shaped resist to the end surface and back of a wafer, and to obviate the fall-off of the resist by spraying-up a resist solvent from the back during the revolution of the wafer and washing away of the resist creeping from the upper surface of the wafer. CONSTITUTION:A fixed quantity of the resist 25 is dropped from a dispense-tube 24 positioned at the upper section of the wafer 23. The resist 25 dropped is subject to centrifugal force and spread thinly in the radial direction of the wafer 23 because the wafer 23 is turned with the revolution of a spindle 21, and the excessive resist is shaken off from the end surface of the wafer. In this case, the excessive resist intends to round to the surface of the wafer 23, but it is washed away by the resist solvent 27 injected from a nozzle 26 fitted to the lower section of the wafer 23. Accordingly, the excessive resist does not creep to the back of the wafer 23.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明はスピンコータを用いてウェハ等の基板表面に
レジスト薄膜を形成する際に１ウ工ハ裏面へのレジスト
の回シ込みゃ付着を防止するようにしたレジスト塗布方
法に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention prevents the resist from being stuck to the back surface of a first step when forming a resist thin film on the surface of a substrate such as a wafer using a spin coater. The present invention relates to a resist coating method.

〔発明の技術的背景〕[Technical background of the invention]

第１図に従来のレジスト塗布方法を示す、っｔｂ、スピ
ンドル１１と同軸上に取付けられたパキ、−ムチャ、り
１２上にウェハ１３を固定する。そして、上記ウニ八１
３上方にあるアイス（ンスチューｆ１４よシレジスト１
５を一定量滴下する。ｔた、スピンドル１１の回転ト吉
もにウェハ１３は回転しているため滴下されたレジスト
１５は遠心力を受けてウェハ１３の半径方向に薄く広が
シ、余分なレジストはウェハ端面よシ振シ切られる。そ
して、上記スピン−Ｐル１１の回転数と上記レジスト１
ｓ（Ｄ粘度を調節するととＫよって、ウェハ１３の全表
面にわたって所望の厚さを得ているものである。こζで
、通常のスピンドル１１の回転数は１０００〜８０００
　ｒｐｍ　、レゾスト粘度は２０〜Ｚｏｏ　ｅｐ　、　
ｍ布膜厚は数千又〜数μｍである。上記レジスト１５は
成膜材の樹脂と感光成分を有機溶剤に溶解したものであ
り、遠心力を受けてウニ６１３表面に薄く広がる際に有
機溶剤は蒸発しである程度硬化したレジスト薄膜が形成
されるものである。A conventional resist coating method is shown in FIG. 1. A wafer 13 is fixed on a plate 12 mounted coaxially with a spindle 11. And the above sea urchin hachi 1
3 Ice cream above
Drop a certain amount of 5. In addition, since the wafer 13 is rotating as the spindle 11 rotates, the dropped resist 15 is subjected to centrifugal force and spreads thinly in the radial direction of the wafer 13, and the excess resist is shaken off from the wafer end surface. It gets cut off. Then, the rotation speed of the spin pulley 11 and the resist 1
s (D By adjusting the viscosity K, the desired thickness can be obtained over the entire surface of the wafer 13. In this case, the normal rotation speed of the spindle 11 is 1000 to 8000.
rpm, resist viscosity is 20~Zoo ep,
The thickness of the film is from several thousand to several μm. The above-mentioned resist 15 is made by dissolving the resin and photosensitive component of the film forming material in an organic solvent, and when it is spread thinly on the surface of the sea urchin 613 under the influence of centrifugal force, the organic solvent evaporates and a resist thin film that is hardened to some extent is formed. It is something.

〔背景技術の問題点〕[Problems with background technology]

しかし１、従来のレジスト塗布方法ではレジストがウェ
ハ１３の裏面に□回り返み、ウェハ１３の端面にも多く
の硬化した・シストが付着してしまう現象が生じていた
。また、ウェア１１３の裏面にコータの力、プ内で霧状
になったレジメトが裏面に点状に付着してしまうという
現象が生じていた。However, 1. In the conventional resist coating method, a phenomenon occurred in which the resist was turned around on the back surface of the wafer 13, and many hardened cysts were also attached to the end surface of the wafer 13. Further, there has been a phenomenon in which the regimen, which has become atomized in the coater due to the force of the coater, adheres to the back surface of the wear 113 in dots.

第２図はレジストが塗布されたウェハ１３を裏面から見
た図で、１６はウェハ１３の裏面に回）込んだレジスト
、１７はウェハＪ３の裏面に点状に付着したレジストを
示している。FIG. 2 is a view of the wafer 13 coated with resist, seen from the back side, and 16 shows the resist that has been passed onto the back side of the wafer 13, and 17 shows the resist that is dotted on the back side of the wafer J3.

また、第３図はレジストが塗布されたウェハ１３の一部
断面図を示すもので、レジストの回）込み及び霧状レジ
ストの裏面への付着をよく現わしている。Further, FIG. 3 shows a partial cross-sectional view of the wafer 13 coated with resist, which clearly shows the spread of the resist and the adhesion of the atomized resist to the back surface.

従って、第２図あるいは第３図に示したようにウェハＪ
ＪＣ）裏面に付着したレジストは露光時ウェハの平行平
面精度を下げる。このためウニへの搬送中にウェハが脱
落し、微細・母ターンの形成に悪影響を与えるという欠
点があった。Therefore, as shown in FIG. 2 or 3, the wafer J
JC) Resist attached to the back side reduces the parallel plane accuracy of the wafer during exposure. For this reason, there was a drawback that the wafer fell off during transportation to the sea urchin, which adversely affected the formation of fine and master turns.

〔発明の目的〕[Purpose of the invention]

この発明は上記の点に鑑みてなされたものでその目的は
レジスト塗布時のウェハの端面及び裏面へのレジストの
回）込みや霧状レジストの裏面への付着を防止して露光
時のウェハの平行平面精度を向上させ付着するレジスト
の脱落を防止するようにしたレジスト塗布方法を提供す
る仁とＫある。This invention has been made in view of the above points, and its purpose is to prevent the resist from spreading to the edge and back surface of the wafer during resist application and to prevent the atomized resist from adhering to the back surface of the wafer during exposure. Jin and K provide a resist coating method that improves the parallel plane accuracy and prevents the adhered resist from falling off.

〔発明の概要〕[Summary of the invention]

スピンコータを用いてウェハにレジストを塗布する場合
、ウニ八回転中に裏面よ）レジスト溶剤を吹き付けてウ
ェハ上面よシ回）込んだレゾストを洗い流すようにして
いる。When applying resist to a wafer using a spin coater, a resist solvent is sprayed onto the back side of the wafer while the wafer is rotated eight times, and the resist applied onto the top surface of the wafer is washed away.

〔発明の実施例〕[Embodiments of the invention]

以下、図面を参照してこの発明の一実施例を説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第４図はスピンコータを示す図である。図において、２
１はスピンドルである。このスピンドル２１と同軸実に
バキュームチャ。FIG. 4 is a diagram showing a spin coater. In the figure, 2
1 is a spindle. This spindle 21 and coaxial vacuum member.

り２２が取シ付けられている。そして、このパキ、−ム
チャ、り２２上にクエへ２３が固定される。また、上記
ウェハ２３上方にはディス−！ンスチューブ２４が設け
られて込る。このディスペンスチューブ２４からはレジ
スト２５がウェハ２３上に滴下される。また上記ウェハ
２３下方にはノズル２６が設けられている。このノズル
２６からはレジスト溶剤２７が上記ウェハ２３下面に吹
き付けられる。さらに、２８は力、ｆで、レジスト２５
及びレジスト溶剤２１の外部への飛び散シを防止してい
ゐ。22 is attached. Then, a square 23 is fixed on this Paki, Mucha, Ri 22. Also, above the wafer 23 is a disk! A spring tube 24 is provided and inserted. A resist 25 is dripped onto the wafer 23 from the dispense tube 24 . Further, a nozzle 26 is provided below the wafer 23. A resist solvent 27 is sprayed from this nozzle 26 onto the lower surface of the wafer 23 . Furthermore, 28 is the force, f, and the resist 25
It also prevents the resist solvent 21 from scattering to the outside.

次に、動作について説明する。まず、ウェハ２Ｊ上方Ｖ
Ｃあるディスペンスチューブ２４よりレジスト２５が一
定量滴下される。また、スピンドル２１の回転とともに
ウェハ２３は回転しているため滴下されたレジスト２５
は遠心力を受けてウェハ２３の半径方向に薄く広がシ、
余分衣レジストはウェハ端面よ）振シ切られる。Next, the operation will be explained. First, the upper V of the wafer 2J
A certain amount of resist 25 is dropped from a certain dispense tube 24. Also, since the wafer 23 is rotating with the rotation of the spindle 21, the dropped resist 25
spreads thinly in the radial direction of the wafer 23 due to centrifugal force,
The excess coating resist is shaken off (from the wafer edge).

この際、余分なレジストはウェハ２３１＆面に回〕込も
うとするが、上記ウェハ２３の下方に設けられているノ
ズル２６よ）噴射されるレノスト溶剤２７によシ洗い流
される。このため、余　　・分なレジストはウェハ２３
裏面には回り込まない。At this time, the excess resist tends to flow onto the surface of the wafer 231, but is washed away by the Renost solvent 27 sprayed from the nozzle 26 provided below the wafer 23. Therefore, the excess resist is removed from the wafer 23.
It does not go around to the back side.

第５図はノズル２Ｃの形状を示す図で、同図■はノズル
２６から吹き出るレジスト溶剤２７の流れ方向がウェハ
２３′Ｉｋ面に対して直角なものを示す、ｔた同図側）
はノズル２６から吹き出るレジスト溶剤２７の流れ方向
がウェハ２３の半径方向に傾斜しているものを示す。ま
た、同図（Ｑはノズル２６から吹き出るレジスト溶剤２
７の流れ方向がウェハ２３の中心方向に傾斜しているも
のを示す、さらに、同図（ロ）はノズル２６の吹き出し
口が扇形をしておシ、レジスト溶剤２１の吹き出しが多
方向に及んでいるもの。Fig. 5 is a diagram showing the shape of the nozzle 2C, and Fig. 5 shows a case where the flow direction of the resist solvent 27 blown out from the nozzle 26 is perpendicular to the wafer 23'Ik surface.
The flow direction of the resist solvent 27 blown out from the nozzle 26 is inclined in the radial direction of the wafer 23. Also, in the same figure (Q is the resist solvent 2 spewing out from the nozzle 26).
The flow direction of the nozzle 26 is inclined toward the center of the wafer 23. In addition, the flow direction of the nozzle 26 is fan-shaped in FIG. what you are reading.

また、同図（ト）はノズル２６が半径方向に移動するも
のを示している。Moreover, the same figure (g) shows the nozzle 26 moving in the radial direction.

〔発明の効果〕〔Effect of the invention〕

以上詳述したようにこの発明によれば、レジスト塗布時
、ウェハ裏面及び端面へのレジスト付着を防止すること
ができ、さらにフータの力、ゾ内に浮遊する霧状レジス
トのウェハ裏面への付着を防止することができる。さら
に、レジスト塗布処理が行なわれた後ウェハ裏面及び端
面は平らであるため、露光装置にパキ、−ムチャ、りで
固定する際にパキ、−ムチャ、り、ウェハの平行平面精
度を上げ、リングラフィの解像度及び合わせ精度を向上
させることができる。As detailed above, according to the present invention, it is possible to prevent the resist from adhering to the back surface and end surface of the wafer during resist application, and furthermore, the force of the footer can prevent the atomized resist floating in the wafer from adhering to the back surface of the wafer. can be prevented. Furthermore, since the back and end surfaces of the wafer are flat after the resist coating process is performed, when fixing the wafer to an exposure device with a paki, -mucha, or rip, the parallel plane precision of the wafer is improved and the wafer is Graphic resolution and alignment accuracy can be improved.

また、ウェハを空気を用いて搬送する際、ウェハ裏面の
摩擦抵抗を低減させ、なめらがな搬送に寄与することが
できる。このことは処理能力の向上に効果がある。さら
に１ウエハ搬送中にウェハ裏面及び端面に付着するレジ
ストの脱落をなくし塵埃の発生を防止することができる
。Furthermore, when the wafer is transported using air, the frictional resistance on the back surface of the wafer can be reduced, contributing to smooth transport. This has the effect of improving processing capacity. Furthermore, it is possible to prevent the resist that adheres to the back surface and end surface of the wafer from falling off during transportation of one wafer, thereby preventing the generation of dust.

さらＫｔ九、コータカッゾ内壁に付着したレノストをレ
ゾスト溶剤にょシ洗い流すことができるのでコータカ、
ｆ内の洗浄に効果がある。さらに１ウ工ハ裏面よシ吹き
付けられた溶媒はスピンドル室内に充満するため、レジ
スト塗布中にレジスト溶媒の急速な蒸発を防ぎ、膜厚分
布の均一化を計ることができる。さらに、周辺部のレジ
ストを溶媒で溶解飛散させることにょシ膜厚分布の均一
化を計ることができる。In addition, Kt9, the coater can wash off the resin that adheres to the inner wall with the resin solvent,
Effective for cleaning inside f. Furthermore, since the solvent sprayed from the back side in step 1 fills the spindle chamber, rapid evaporation of the resist solvent during resist coating can be prevented and uniform film thickness distribution can be achieved. Furthermore, by dissolving and scattering the resist in the peripheral area with a solvent, it is possible to make the film thickness distribution uniform.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のレジスト塗布方法を示す図、第２図は従
来のレジスト塗布方法でレジストが８− 塗布されたウェハを裏面から見た図、第３図は従来のレ
ジスト塗布方法でレジストが塗布されたウェハの一部断
面図、第４図はこの発明の一実施例を示すレジスト塗布
方法を示す図、第５図に）ないしくト）はそれぞれノズ
ルの形、状を示す図である。 ２１・・・スピンドル、２２・・・／４キ、−ムチャ。 り、２３・・・ウェハ、２４・・・ディスペンスチュー
ブ、２５・・・レジスト、２６・・・ノズル。 出願人代理人　　弁理士　鈴　江　武　２第１図 慎２図 慎３図 ｏ　Ｊ８・ρ・べ 特許庁長官　　若　杉　和　夫　　殿 ■、事件の表示 ％動昭５７−８３８４３号 ２、発明の名称 レジスト塗布方法 ３、補正をする者 事件との関係　　特許出願人 （３０７）　　東京芝浦電気株式会社 ４、代理人 住所　東京都港区虎ノ門１丁目部番５号　第１７森ピル
〒１０５　　　電話０３　（５０２）　３１８１　（大
代表）　、’　；、、　、、　　　：％。 ５、自発補正 ７、補正Ω内容 （１）　　明細書第４頁第１３行目ないし第１４行目に
「このため、ウェハの搬送中にウエノ・が脱落し、」と
あるを「このため、ウエノ１搬送中にウェハの裏面に回
り込んだり付着したレジストが落脱し、それが再度ウエ
ノ１表面に付着することにより、」と訂正する。Figure 1 is a diagram showing a conventional resist coating method, Figure 2 is a view from the back of a wafer coated with resist by a conventional resist coating method, and Figure 3 is a diagram showing a resist coated by a conventional resist coating method. FIG. 4 is a partial cross-sectional view of a coated wafer, FIG. 4 is a diagram showing a resist coating method according to an embodiment of the present invention, and FIGS. . 21...Spindle, 22.../4 Ki, - Mucha. 23... Wafer, 24... Dispense tube, 25... Resist, 26... Nozzle. Applicant's agent Patent attorney Takeshi Suzue 2 Figure 1 Shin 2 Figure Shin 3 o J8・ρ・Be Commissioner of the Patent Office Kazuo Wakasugi■, Indication of the case % Motion No. 1983-83843 2, Name of the invention Resist coating method 3, relationship with the amended person case Patent applicant (307) Tokyo Shibaura Electric Co., Ltd. 4 Agent address 17 Mori Pill, 1-chome, Toranomon, Minato-ku, Tokyo, part number 5 105 Telephone 03 (502) ) 3181 (major representative) ,';,, ,, :%. 5. Spontaneous Correction 7, Correction Ω Contents (1) On page 4 of the specification, lines 13 and 14, the phrase ``For this reason, the wafer fell off during the transportation of the wafer,'' has been changed to ``For this reason,'' This is due to the fact that the resist that has wrapped around or adhered to the back side of the wafer during the transfer of the wafer 1 falls off and adheres to the surface of the wafer 1 again.''

Claims (6)

【特許請求の範囲】[Claims] （１）　　スピンコータを用いてクエへにレジストを塗
布するレジスト塗布方法において、クエへ回転中にウェ
ハの下方に設けられたノズルよシレノスト溶剤をウェハ
裏面に吹き付けてウェハ上面よりｎｂ込んだレジストを
洗い流すようにしたことを特徴とするレジスト塗布方法
。(1) In a resist coating method in which a spin coater is used to apply resist to a wafer, a nozzle provided below the wafer sprays Silenost solvent onto the back surface of the wafer while the wafer is rotating to wash away nb of resist from the top surface of the wafer. A resist coating method characterized by: （２）上記ノズルの吹き出し口は王妃つニへに対して直
角方向に位置していることを特徴とする特許請求の範囲
第１項記載のレジスト塗布方法。(2) The resist coating method according to claim 1, wherein the outlet of the nozzle is located in a direction perpendicular to the queen. （３）上記ノズルの吹き出し口は上記ウェハの半径方向
に傾斜していることを特徴とする特許請求の範囲第１項
記載のレジスト塗布方法。(3) The resist coating method according to claim 1, wherein the outlet of the nozzle is inclined in the radial direction of the wafer. （４）上記ノズルの吹き出し口は上記ウェハの中心方向
に傾ｆＡＬ、ていることを特徴とする特許請求のＷｒ！
凹第１項記蓼のレジスト塗布方法。(4) Wr!, characterized in that the outlet of the nozzle is inclined fAL toward the center of the wafer!
Method for applying resist as described in Section 1 below. （５）上記ノズルの吹き出し口は扇形の形状をしてい゛
ることを特徴とする。ｆ４Ｉ′１１ｆ請求の範囲第１項
記載のレジスト塗布方法。(5) The nozzle is characterized in that the outlet has a fan-like shape. f4I'11f The resist coating method according to claim 1. （６）上記ノズルの吹き出し口は上記ウニへの半径方向
に移動することが中きることを特徴とする特許請求の範
囲第１項記載のレジスト塗布方法。(6) The resist coating method according to claim 1, wherein the outlet of the nozzle can be moved in a radial direction toward the sea urchin.
JP8384382A 1982-05-18 1982-05-18 Applying method for resist Pending JPS58200537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8384382A JPS58200537A (en) 1982-05-18 1982-05-18 Applying method for resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8384382A JPS58200537A (en) 1982-05-18 1982-05-18 Applying method for resist

Publications (1)

Publication Number Publication Date
JPS58200537A true JPS58200537A (en) 1983-11-22

Family

ID=13813984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8384382A Pending JPS58200537A (en) 1982-05-18 1982-05-18 Applying method for resist

Country Status (1)

Country Link
JP (1) JPS58200537A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028955A (en) * 1989-02-16 1991-07-02 Tokyo Electron Limited Exposure apparatus
JPH03241820A (en) * 1990-02-20 1991-10-29 Tokyo Electron Ltd Rear surface washing device

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JPS5752132A (en) * 1980-09-16 1982-03-27 Toshiba Corp Manufacturing apparatus for semiconductor

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JPS51132972A (en) * 1975-04-28 1976-11-18 Ibm Method of etching
JPS52123172A (en) * 1976-04-08 1977-10-17 Fuji Photo Film Co Ltd Spin coating method
JPS52144277A (en) * 1976-05-27 1977-12-01 Mitsubishi Electric Corp Manufacturing device of semiconductor
JPS5412123A (en) * 1977-06-30 1979-01-29 Obayashi Gumi Kk Method of placing concrete through concrete pump
JPS54125981A (en) * 1978-03-23 1979-09-29 Nec Corp Semiconductor washing device
JPS5752132A (en) * 1980-09-16 1982-03-27 Toshiba Corp Manufacturing apparatus for semiconductor

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* Cited by examiner, † Cited by third party
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US5028955A (en) * 1989-02-16 1991-07-02 Tokyo Electron Limited Exposure apparatus
JPH03241820A (en) * 1990-02-20 1991-10-29 Tokyo Electron Ltd Rear surface washing device

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