JPS61201353U - - Google Patents

Info

Publication number
JPS61201353U
JPS61201353U JP8511285U JP8511285U JPS61201353U JP S61201353 U JPS61201353 U JP S61201353U JP 8511285 U JP8511285 U JP 8511285U JP 8511285 U JP8511285 U JP 8511285U JP S61201353 U JPS61201353 U JP S61201353U
Authority
JP
Japan
Prior art keywords
electrode
diode
thin film
resistor
film resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8511285U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8511285U priority Critical patent/JPS61201353U/ja
Publication of JPS61201353U publication Critical patent/JPS61201353U/ja
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】
第１図はこの考案の実施例である半導体装置の
断面図、第２図はこの考案の他の実施例の半導体
装置の断面図、第３図および第４図は抵抗とダイ
オードによる基本的な回路を示す図である。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) ダイオードを形成した半導体基板の酸化膜
    の表面に、前記ダイオードに隣接して薄膜抵抗を
    形成し、この薄膜抵抗の一方の電極を前記ダイオ
    ードの一方の電極に接続し、この接続部の電極と
    前記抵抗の他方の電極および前記ダイオードの他
    方の電極とをそれぞれ外部に取り出したことを特
    徴とする半導体装置。 (2) 前記薄膜抵抗をポリシリコンによる成長膜
    により形成したことを特徴とする実用新案登録請
    求の範囲第１項記載の半導体装置。
JP8511285U 1985-06-04 1985-06-04 Pending JPS61201353U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8511285U JPS61201353U (ja) 1985-06-04 1985-06-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8511285U JPS61201353U (ja) 1985-06-04 1985-06-04

Publications (1)

Publication Number Publication Date
JPS61201353U true JPS61201353U (ja) 1986-12-17

Family

ID=30635206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8511285U Pending JPS61201353U (ja) 1985-06-04 1985-06-04

Country Status (1)

Country Link
JP (1) JPS61201353U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125882A (ja) * 1987-08-21 1989-05-18 Nippon Denso Co Ltd 磁気検出装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967670A (ja) * 1982-10-12 1984-04-17 Toshiba Corp 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967670A (ja) * 1982-10-12 1984-04-17 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125882A (ja) * 1987-08-21 1989-05-18 Nippon Denso Co Ltd 磁気検出装置

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