JPS6095931A - Electrostatic chuck - Google Patents

Electrostatic chuck

Info

Publication number
JPS6095931A
JPS6095931A JP20424083A JP20424083A JPS6095931A JP S6095931 A JPS6095931 A JP S6095931A JP 20424083 A JP20424083 A JP 20424083A JP 20424083 A JP20424083 A JP 20424083A JP S6095931 A JPS6095931 A JP S6095931A
Authority
JP
Japan
Prior art keywords
wafer
electrode
electrostatic chuck
distance
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20424083A
Other languages
Japanese (ja)
Inventor
Yoshio Suzuki
鈴木　美雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP20424083A priority Critical patent/JPS6095931A/en
Priority to US06/664,408 priority patent/US4692836A/en
Priority to DE19843439371 priority patent/DE3439371A1/en
Priority to FR848416701A priority patent/FR2554288B1/en
Publication of JPS6095931A publication Critical patent/JPS6095931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

PURPOSE:To correct for a steady and proper support the curvature naturally generated in a device to be subjected to adhesion by a method wherein the distance from the surface of a dielectric substance constituting the attracting surface to an electrode differs from point to point and the distribution of attracting force at the start of attraction is adjusted as desired. CONSTITUTION:A wafer 13 is placed on the surface 12a of a dielectric body 12 and a DC source 14 is applied across an electrode 11 and the wafer 13 for the generation of attracting force with its intensity changing in inverse proportion to the square of the distance between the two. With the middle portion of the surface 11a of the electrode 11 made higher than the other portion, even when the wafer 13 is convex with its middle portion elevated, the distance is reduced between the wafer 13 and the electrode 11 at their middle and peripheral portions. This ensures a complete adhesion of the surface of the wafer 13 to the attracting surface 12a and the high-precision attracting surface 12a corrects the wafer curvature for correct, steady support. With the unit thus designed, flawless, steady electrostatic attraction is realized, with the distribution of the initial attracting force can be properly set so curvature in the wafer may be removed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、静電チャックに係り、特に半導体ウェハのよ
うな自然状態において反っていることのある被チャック
物（以下ウニ・・とじて説明する）を平坦などの所定形
状に矯正して支持固定するだめの静電チャックに関する
ものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electrostatic chuck, and particularly relates to an electrostatic chuck for chucking an object to be chucked (hereinafter referred to as a sea urchin) that may be warped in its natural state, such as a semiconductor wafer. The present invention relates to an electrostatic chuck for correcting and supporting and fixing a material into a predetermined shape such as a flat surface.

〔従来技術〕[Prior art]

従来、この種の静電チャックは、第１図に示すように、
平板状の電極１の表面に、絶縁物からなる薄板ないしは
膜状の誘電体２を付着させ、この誘電体２の表面（以下
チャック面という）に置かれたウェハ３と電極１との間
に直流電源４を接続して両者の間に生ずる電位差により
吸引力を生じさせて、該ウェハ３をチャック面に密着固
定させるようになっていた。この静電チャックの吸引力
ｆは、下式で表わされる。Conventionally, this type of electrostatic chuck, as shown in Figure 1,
A thin plate or film dielectric 2 made of an insulator is attached to the surface of the flat electrode 1, and a wafer 3 placed on the surface of the dielectric 2 (hereinafter referred to as the chuck surface) is placed between the electrode 1. A DC power source 4 is connected and the potential difference generated between the two generates an attractive force to tightly fix the wafer 3 to the chuck surface. The attraction force f of this electrostatic chuck is expressed by the following formula.

ただし、Ｋは定数、ｎは誘電体２の誘電率、■は電極１
とウェハ３の間の電位差、ａは誘電体２の厚さ、ｂは誘
電体２とウェハ３の間のすき間である。However, K is a constant, n is the permittivity of dielectric 2, and ■ is electrode 1.
and the wafer 3, a is the thickness of the dielectric 2, and b is the gap between the dielectric 2 and the wafer 3.

上式から明らかなように吸引力は、電極１とウェー・３
との間のすき間すが小さいところほど大きくなる。そこ
で、吸着されるウェハ３が、第１図に示すように、中央
が高くなるように反っている場合には、周囲がチャック
面に接触もしくは接近しているためにより強い吸引力を
受け、この周囲部分が先に吸引固定されてしまう。ウニ
・−３の中央部は、その後、吸引力によってチャック面
に密着されようとするが、この中央部が下降してチャッ
ク面に密着するためには、周囲部分が外方へすべらなく
てはならない。ところが、この周囲部分は前記のように
すでにチャック面に密着してより強い吸引力を受けてい
るため、すべることができず、したがってウニ・・３の
中央部をチャック面へ密着させることができず、ウェハ
３の反りを完全に矯正することができない欠点があった
。As is clear from the above equation, the attraction force is between electrode 1 and wave 3.
The smaller the gap between the Therefore, if the wafer 3 to be sucked is curved so that the center is higher, as shown in FIG. The surrounding area will be suctioned and fixed first. The central part of the sea urchin-3 then tries to adhere to the chuck surface due to the suction force, but in order for this central part to descend and come into close contact with the chuck surface, the surrounding part must slide outward. No. However, as mentioned above, this peripheral part is already in close contact with the chuck surface and is receiving a stronger suction force, so it cannot slide, and therefore the central part of the sea urchin 3 cannot be brought into close contact with the chuck surface. First, there was a drawback that the warpage of the wafer 3 could not be completely corrected.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、前述したような欠点を除去し。 The object of the invention is to eliminate the drawbacks as mentioned above.

ウェハなどの被チャック物の自然状態における反りをよ
り完全に矯正して支持固定することのできる静電チャッ
クを提供するにある。An object of the present invention is to provide an electrostatic chuck capable of more completely correcting the warpage of an object to be chucked such as a wafer in its natural state and supporting and fixing the object.

〔発明の構成〕[Structure of the invention]

かかる目的を達成するだめの本発明は、チャンク面を形
成する誘電体の表面から電極までの距離を該表面上の位
置に応じて変化させ、少なくとも吸着開始時にウェハな
どの被チャック物に作用する吸引力の分布を前記距離の
変化によって所望の状態に定めるようにしたものである
。To achieve such an object, the present invention changes the distance from the surface of the dielectric material forming the chunk surface to the electrode depending on the position on the surface, and acts on the chucked object such as a wafer at least at the start of suction. The distribution of the suction force is determined in a desired state by changing the distance.

〔実施例〕〔Example〕

以下本発明の一実施例を示す第２図について説明する。 FIG. 2, which shows one embodiment of the present invention, will be described below.

同図おいて、１１は電極、１２は誘電体、１３はウェハ
、１４は直流電源である。チャック面となる誘電体１２
の表面１２ａは、ウェハ１３を平坦に矯正して支持固定
するために、高精度な平面に形成されている。これに対
し、誘電体１２が付着される電極１１の表面１１ａは、
中央部が高くなるような例えば球面などの曲面または多
面形状になされ、この電極１１の表面１１ａと誘電体１
２の表面１２ａとの距離が該表面１２ａの中央部では短
かく、外方はど長くなるように形成されている。すなわ
ち、誘電体１２の厚さは、表面１２ａの中央部が薄く、
外方はど厚くなっている。In the figure, 11 is an electrode, 12 is a dielectric, 13 is a wafer, and 14 is a DC power source. Dielectric material 12 that becomes the chuck surface
The surface 12a is formed into a highly precise plane in order to straighten the wafer 13 flat and support and fix it. On the other hand, the surface 11a of the electrode 11 to which the dielectric 12 is attached is
The surface 11a of the electrode 11 and the dielectric 1
The distance from the surface 12a of the surface 12a is short at the center of the surface 12a, and is long toward the outside. That is, the thickness of the dielectric 12 is thinner at the center of the surface 12a;
It is thicker on the outside.

前記距離すなわち誘電体１２の厚さ分布の設定は、ウェ
ハ１３の経験から予想されるそり反シ量を基準にし、前
述した吸引力ｆの式から、該吸引力ｆがウェハ１３の各
部にほぼ一様に作用するように、すなわち電極１１の表
面１１ａを前記ウェ・・１３の予想されるそり反り形状
に略一致させるか、またはウェハ１３の中央部により強
い吸引力が作用するようにするか、さらにまたウェハ１
３の外方部と中央部との吸引力の関係を中央部が密着す
る際にウェハ１３の外方部が誘電体１２０表面１２ａ上
ですベシ得るように定める。The setting of the distance, that is, the thickness distribution of the dielectric material 12, is based on the amount of warpage expected from experience with the wafer 13, and from the above-mentioned formula for the suction force f, it is determined that the suction force f is approximately applied to each part of the wafer 13. Either the surface 11a of the electrode 11 should be made to approximately match the expected warped shape of the wafer 13, or a stronger attraction should be applied to the center of the wafer 13. , and also wafer 1
The relationship between the attraction forces between the outer part and the central part of the wafer 13 is determined so that the outer part of the wafer 13 is on the surface 12a of the dielectric 120 when the central part is in close contact with each other.

次いで本装置の作用について説明する。第２図に示すよ
うに、ウェハ１３を誘電体１２の表面１２ａ上に置き、
予じめ電極１１に一方の端子が接続されている直流電源
１４の他側の端子をウェ・・１３に接続する。これによ
りて電極１１とウェ・・１３の間には電位差を生じ１両
者の間に吸引力が発生する。Next, the operation of this device will be explained. As shown in FIG. 2, the wafer 13 is placed on the surface 12a of the dielectric 12,
The other terminal of the DC power supply 14, one terminal of which is previously connected to the electrode 11, is connected to the wire 13. As a result, a potential difference is created between the electrode 11 and the wire 13, and an attractive force is generated between the two.

この吸引力は、前記の式から明らかなように、電極１１
とウェハ１３との間の距離の２乗に反比例した値となる
。本装置は、電極１１の表面１１ａを中央が高くなるよ
うにしであるため、チャック面１２ａに置かれたウェハ
１３が図示のように中央が高くなるように十千反ってぃ
ても、ウェハ１３の中央部と外方部での該ウェハ１３と
電極１１との距離の差が減じられる。このため、外方部
が先に強く吸着され、中央部がチャック面１２ａに密着
することを阻害するような不都合を生じず、ウェハ１３
は全面がチャック面１２ａに確実に吸着され、高精度に
なされているチャック回文 １２ａによってＸりが矯正され、正しく支持固定される
。As is clear from the above equation, this attraction force is
The value is inversely proportional to the square of the distance between and the wafer 13. In this device, the surface 11a of the electrode 11 is made so that the center is higher, so even if the wafer 13 placed on the chuck surface 12a is warped 10000 times so that the center is higher as shown in the figure, the wafer 13 The difference in distance between the wafer 13 and the electrode 11 between the center and outer parts of the wafer 13 is reduced. Therefore, the outer part is strongly attracted first and the central part does not come into close contact with the chuck surface 12a.
The entire surface of the chuck is reliably attracted to the chuck surface 12a, and the chuck palindrome 12a, which is made with high precision, corrects the X-curvature and is correctly supported and fixed.

第３図は１本発明の他の実施例を示すもので、電極２１
の表面２１ａを図示のように平面（曲面でもよい）にし
て全体的に傾斜させ、誘電体２２の厚さを図において右
側から左側へ向って次第に厚くなるようにしたものであ
る。この場合には、まずウェハ２３の図において右側が
より強く吸引されて固定されるが、他の部分は誘電体２
２の厚さが厚いために、吸引力は減じられ、前記右側の
強く吸引されている部分を固定点としてすべりを生じな
がら全面がチャック面２２ａに密着される。FIG. 3 shows another embodiment of the present invention, in which the electrode 21
As shown in the figure, the surface 21a of the dielectric body 22 is made flat (or curved) and inclined as a whole, and the thickness of the dielectric 22 becomes gradually thicker from the right side to the left side in the figure. In this case, first, the right side of the wafer 23 in the figure is attracted and fixed more strongly, but the other parts are attached to the dielectric 23.
2 is thick, the suction force is reduced, and the entire surface of the chuck surface 22a is brought into close contact with the chuck surface 22a, with the strongly suctioned portion on the right side being used as a fixing point and slipping.

なお、第２図および第３図に示した装置でありても、ウ
ェハ１３．２３と電極１１．２１への電圧の印加は、瞬
間的に所定の電圧を印加せずに、ウニ・・１３．２３の
変形速度より遅い率で電圧を零から所定の値まで上昇さ
せた方が矯正効果を一層上げることができる。In addition, even with the apparatus shown in FIGS. 2 and 3, the application of voltage to the wafer 13.23 and the electrode 11.21 is performed without applying a predetermined voltage instantaneously. The straightening effect can be further improved by increasing the voltage from zero to a predetermined value at a rate slower than the deformation rate of .23.

第４図は本発明のさらに他の実施例を示すもので、チャ
ック面３２ａと電極表面３１ａとの距離に応じて電極３
１を３ＬＡ、３１Ｂ、３．ＩＣに分割し、それぞれ独立
して電圧を印加できるようにすると共に、電圧調整器３
５．３６．３７にて印加電圧を変更可能にしたものであ
る。この第４図は、前述した第２図の装置に対応した例
を示したもので、中央の電極３１Ａを第４図において上
から見たとき、円形または多角形とし、他の電極３１１
３．３１Ｃがそれを取り囲む環状になっている。ただし
、第３図に対応させた場合は、同図において右から左へ
複数の電極を配列すればよい。これらの装置によれば、
吸着開始時には同一の電圧を印加するが、吸着完了後に
電圧調整器３５．３６．３７により最終吸着状態がより
好ましくなるように各々の電極３１Ａ、３１Ｂ、３１Ｃ
への印加電圧を調整することができる。FIG. 4 shows still another embodiment of the present invention, in which the electrode 3 is adjusted according to the distance between the chuck surface 32a and the electrode surface 31a.
1 to 3LA, 31B, 3. It is divided into ICs so that voltage can be applied independently to each IC, and the voltage regulator 3
5.36.37, the applied voltage can be changed. This FIG. 4 shows an example corresponding to the device shown in FIG.
3.31C forms a ring surrounding it. However, if it corresponds to FIG. 3, a plurality of electrodes may be arranged from right to left in the figure. According to these devices,
At the start of adsorption, the same voltage is applied, but after the adsorption is completed, voltage regulators 35, 36, and 37 are applied to each electrode 31A, 31B, and 31C so that the final adsorption state is more favorable.
The voltage applied to can be adjusted.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、半導体ウェハなどの
ように自然状態において反っている被チャック物の吸着
開始時に問題となる吸引力の強弱の差を減じ、または該
強弱の分布を被チャック物の反りを除去するのに適した
ように定めることができるため、チャノク不良のないよ
り確実な静電チャックが可能となる。As described above, according to the present invention, it is possible to reduce the difference in the strength of the suction force, which is a problem when starting to attract an object to be chucked that is warped in its natural state, such as a semiconductor wafer, or to adjust the distribution of the strength of the suction force. Since it can be determined to be suitable for removing warpage of objects, more reliable electrostatic chuck without chuck defects is possible.

【図面の簡単な説明】 第１図は従来の静電チャックを示す断面図、第２図ない
し第４図は本発明による静電チャックのそれぞれ異なる
実施例を示す断面図である。 １．１１．２１．３１．３１Ａ、３１Ｂ、３１Ｃ・・・
電極、２．１２．２２．３２・・・誘電体、 ３．１３．２３．３３・・・被チャック（ウェハ）２．
４．１４・・・直流電源、 ３５．３６．３７・・・電圧調整器。 ｊ１原突入　東Ｉ形〜粘ス未、ｔン会イ」！手　続　補
　正　書 １．事件の表示 昭和５８年特許願第２０４２４０号 ２、発明の名称 静電チ↑ツク ３、補正をする者 特許出願人 〒１０４ 住　所　東京都中央区銀座４丁目２査１１号名　称　（
３４５）東芝機械株式会社 ４、補正の対象 明細書の「発明の詳細な説明」の欄 ５、補正の内容 １）明細書第９行BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing a conventional electrostatic chuck, and FIGS. 2 to 4 are sectional views showing different embodiments of the electrostatic chuck according to the present invention. 1.11.21.31.31A, 31B, 31C...
Electrode, 2.12.22.32...Dielectric, 3.13.23.33...Chucked (wafer)2.
4.14...DC power supply, 35.36.37...Voltage regulator. J1 Hara Rush East I-Kusumi, T-Kai"! Procedural amendment 1. Display of the case 1982 Patent Application No. 204240 2, Name of the invention Electrostatic tick ↑ 3, Person making the amendment Patent applicant Address: 11, 4-2, Ginza, Chuo-ku, Tokyo Name (104)
345) Toshiba Machine Co., Ltd. 4, "Detailed Description of the Invention" column 5 of the specification to be amended, content of the amendment 1) Line 9 of the specification

Claims (1)

【特許請求の範囲】 １、絶縁物で形成され表面に被チャック物を吸着する誘
電体と、同誘電体の裏面側に配置された電極からなる静
電チャックにおいて、前記誘電体の表面から電極までの
距離を該表面上の位置に応じて変化させたことを特徴と
する静電チャック。 ２、前記距離が、前記表面の中央では短かく、外方はど
長くなっている特許請求の範囲第１項記載の静電チャッ
ク。 ３、前記距離が、前記表面上の一側が短かく、他側はど
長くなっている特許請求の範囲第１項記載の静電チャッ
ク。 ４、電極の表面が曲面で、その表面上に誘電体が設けら
れ、該誘電体の表面が平坦に形成されている特許請求の
範囲第１，２または３項記載の静電チャック。 ５、前記距離の分布が、被チャック物の自然状態におけ
るそり反シ形状に関連して定められている特許請求の範
囲第１，２または４項記載の静電チャック。 ６、電極への印加電圧が徐々に増加可能になされている
特許請求の範囲第１．２．３．４または５項記載の静電
チャック。 ７、電極が前記距離の分布に応じて分割され、互いに独
立して印加電圧を調整可能になされている特許請求の範
囲第１．２．３．４，５または６項記載の静電チャック
。[Scope of Claims] 1. An electrostatic chuck consisting of a dielectric formed of an insulator that attracts an object to be chucked on the surface, and an electrode disposed on the back side of the dielectric, in which the electrode is An electrostatic chuck characterized in that the distance to the surface is changed according to the position on the surface. 2. The electrostatic chuck according to claim 1, wherein the distance is short at the center of the surface and becomes longer at the outer edges. 3. The electrostatic chuck according to claim 1, wherein the distance is shorter on one side of the surface and longer on the other side. 4. The electrostatic chuck according to claim 1, 2 or 3, wherein the electrode has a curved surface, a dielectric is provided on the surface, and the dielectric has a flat surface. 5. The electrostatic chuck according to claim 1, 2 or 4, wherein the distance distribution is determined in relation to the warped shape of the chucked object in its natural state. 6. The electrostatic chuck according to claim 1.2.3.4 or 5, wherein the voltage applied to the electrode can be gradually increased. 7. The electrostatic chuck according to claim 1.2.3.4, 5 or 6, wherein the electrodes are divided according to the distance distribution, and the applied voltages can be adjusted independently of each other.
JP20424083A 1983-10-31 1983-10-31 Electrostatic chuck Pending JPS6095931A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP20424083A JPS6095931A (en) 1983-10-31 1983-10-31 Electrostatic chuck
US06/664,408 US4692836A (en) 1983-10-31 1984-10-24 Electrostatic chucks
DE19843439371 DE3439371A1 (en) 1983-10-31 1984-10-27 ELECTROSTATIC CLAMPING DEVICE
FR848416701A FR2554288B1 (en) 1983-10-31 1984-10-31 ELECTROSTATIC CHUCKS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20424083A JPS6095931A (en) 1983-10-31 1983-10-31 Electrostatic chuck

Publications (1)

Publication Number Publication Date
JPS6095931A true JPS6095931A (en) 1985-05-29

Family

ID=16487165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20424083A Pending JPS6095931A (en) 1983-10-31 1983-10-31 Electrostatic chuck

Country Status (1)

Country Link
JP (1) JPS6095931A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179364A (en) * 2002-11-27 2004-06-24 Kyocera Corp Electrostatic chuck
JP2008307498A (en) * 2007-06-18 2008-12-25 Bbc Soft:Kk Stirring device
CN103247563A (en) * 2012-02-02 2013-08-14 台湾积体电路制造股份有限公司 Electrostatic chuck with multi-zone control
JP2015162481A (en) * 2014-02-26 2015-09-07 京セラ株式会社 sample holder
JP2016512393A (en) * 2013-03-12 2016-04-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Substrate support for plasma etching process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179364A (en) * 2002-11-27 2004-06-24 Kyocera Corp Electrostatic chuck
JP2008307498A (en) * 2007-06-18 2008-12-25 Bbc Soft:Kk Stirring device
CN103247563A (en) * 2012-02-02 2013-08-14 台湾积体电路制造股份有限公司 Electrostatic chuck with multi-zone control
JP2016512393A (en) * 2013-03-12 2016-04-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Substrate support for plasma etching process
JP2015162481A (en) * 2014-02-26 2015-09-07 京セラ株式会社 sample holder

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