JPS6095932A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPS6095932A JPS6095932A JP20424183A JP20424183A JPS6095932A JP S6095932 A JPS6095932 A JP S6095932A JP 20424183 A JP20424183 A JP 20424183A JP 20424183 A JP20424183 A JP 20424183A JP S6095932 A JPS6095932 A JP S6095932A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- wafer
- electrostatic chuck
- voltage
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分！！！Ｔ〕
本発明は、静電チャックに係り＋ ！ｌ１１’に半導体
ウェハのような自然状態において反っていることのある
被チャック物（以下ウェハとして説明する）を平坦など
の所定形状に矯正して支持固定するだめの静電チャック
に関するものである。[Detailed description of the invention] [Industrial use! ! ! T] The present invention relates to an electrostatic chuck +! This invention relates to an electrostatic chuck for correcting and fixing an object to be chucked (hereinafter referred to as a wafer), which may be warped in its natural state, such as a semiconductor wafer, into a predetermined shape such as a flat one.
従来、この種の静電チャックは、第１図に示すように、
平板状の電極１の表面に、絶縁物からなる薄板ないしは
膜状の誘電体２を付着させ、この誘電体２の表面（以下
チャック面という）に置かれたウニ・〜３と電極１との
間に直流電源４を接続して両者の間に生ずる電位差によ
り吸引力を生じさせて、該ウニ・・３をチャック面に密
着固定させるようになっていた。この静電チャックの吸
引力ｆは、下式で表わされる。Conventionally, this type of electrostatic chuck, as shown in Figure 1,
A thin plate or film-like dielectric material 2 made of an insulating material is attached to the surface of the flat electrode 1, and the contact between the electrode 1 and the sea urchin 3 placed on the surface of the dielectric material 2 (hereinafter referred to as the chuck surface) is made. A DC power source 4 is connected between them, and the potential difference generated between the two generates an attractive force to tightly fix the sea urchin 3 to the chuck surface. The attraction force f of this electrostatic chuck is expressed by the following formula.
ただし、Ｋは定数、ｎは誘電体２の誘電率、Ｖは電極１
とウェハ３の間の電位差、ａは誘電体２の厚さ、ｂは誘
電体２とウェハ３の間のすき間である。However, K is a constant, n is the permittivity of dielectric 2, and V is electrode 1.
and the wafer 3, a is the thickness of the dielectric 2, and b is the gap between the dielectric 2 and the wafer 3.
上式から明らかなように吸引力は、電極１とウェハ３と
の間のすき間すが小さいところほど大きくなる。そこで
、吸着されるウェハ３が、第１図に示すように、中央が
高くなるように反っている場合には、周囲がチャック面
に接触もしくは接近しているためにより強い吸引力を受
け、この周囲部分が先に吸引固定されてしまう。ウェハ
３の中央部は、その後、吸引力によりてチャック面に密
着されようとするが、この中央部が下降してチャック面
に密着するためには、周囲部分が外方へすべらなくては
ならない。ところが、この周囲部分は前記のようにすで
にチャック面に密着してより強い吸引力を受けているだ
め、すべることができず、したがってウェハ３の中央部
をチャック面へ密着させることができず、ウェハ３の反
りを完全に矯正することができない欠点があった。As is clear from the above equation, the attraction force increases as the gap between the electrode 1 and the wafer 3 becomes smaller. Therefore, if the wafer 3 to be sucked is curved so that the center is higher, as shown in FIG. The surrounding area will be suctioned and fixed first. The center of the wafer 3 then attempts to be brought into close contact with the chuck surface by the suction force, but in order for this center to descend and come into close contact with the chuck surface, the surrounding portion must slide outward. . However, since this peripheral portion is already in close contact with the chuck surface and is receiving a stronger suction force as described above, it cannot slide, and therefore the central portion of the wafer 3 cannot be brought into close contact with the chuck surface. There was a drawback that the warpage of the wafer 3 could not be completely corrected.
本発明の目的は、前述したような欠点を除去し。 The object of the invention is to eliminate the drawbacks as mentioned above.
ウェハなどの被チャック物の自然状態における反りをよ
り完全に矯正して支持固定することのできる静電チャッ
クを提供するにある。An object of the present invention is to provide an electrostatic chuck capable of more completely correcting the warpage of an object to be chucked such as a wafer in its natural state and supporting and fixing the object.
かかる目的を達成するための本発明は、電極をチャック
面に沿った面内において複数個に分割し、設定して被チ
ャック物の反りを完全に矯正し得るようにしたものであ
る。To achieve this object, the present invention divides the electrode into a plurality of parts in a plane along the chuck surface, and sets the electrodes so that the warpage of the object to be chucked can be completely corrected.
以下本発明の一実施例を示す第２図ないし第３図につい
て説明する。第２図において、１１ａ、１１ｂ、ＩＩＣ
は電極、１２ａ、１２ｂ、１２ｃは前記の各電極１１ａ
、１ｌｌ）、ｌｌｃに対応してそれらの表面に設けられ
た誘電体で、前記電極１１２゜１１ｂ、１ｉＣは絶縁性
の基台１５により互いに電気的に独立して支持されてい
る。前記の電極１１ａは、第３図に示すようにチャック
面の中央に位置し、他の電極１１ｂ、ｌｌｃは前記中央
の電極１１ａを取り囲むように同心円のリング状に形成
されている。前記の各電極１１ａ、ｌｌｂ、１ｌｃＫ
ハ’Ｊ −ト線１６ａ、１６ｂ、１６Ｃを介して図示し
ない直流電源から所定の電圧がそれぞれ印加されるよう
になっている。また、これらの電極に対しては、互いに
独立または組合せて中央の電極１１ａから順次外側の電
極１１ｂ、ｌｌｃへと時間をずらせて印加を開始するよ
うになっている。2 and 3 showing one embodiment of the present invention will be explained below. In FIG. 2, 11a, 11b, IIC
are electrodes, and 12a, 12b, 12c are each of the above-mentioned electrodes 11a.
, 1ll) and llc, and the electrodes 112, 11b and 1iC are supported electrically independently from each other by an insulating base 15. The electrode 11a is located at the center of the chuck surface as shown in FIG. 3, and the other electrodes 11b and llc are formed in a concentric ring shape so as to surround the center electrode 11a. Each of the above electrodes 11a, llb, 1lcK
Predetermined voltages are applied from a DC power source (not shown) through the heart wires 16a, 16b, and 16C, respectively. Moreover, the voltage is applied to these electrodes independently or in combination, starting from the central electrode 11a and sequentially starting from the outer electrodes 11b and 11c at different times.
１３はウェハ、１７はアースである。13 is a wafer, and 17 is a ground.
次いで本装置の作用について説明する。第２図に示すよ
うにウェハ１３を置き、次いで、まず中央の電極１１ａ
に電圧を印加する。この中央の電極１１ａへの電圧印加
によりウェハ１３は、第２図に示すように、中央が高く
なるように反っている場合でも、まず中央部が吸引され
て誘電体１２ａの表面すなわちチャック面に吸着される
。このウェハ１３の中央部の吸着は、外周側の電極１１
／ｂ、ｌｌｃに電圧が印加されておらず、ウェハ１３の
外ｍ雰わには西引すｌ値；作出２イ暖＾４区＾占仏ウニ
・・１３が第２図に示すように反っていても、凰
ウニ・〜１３の外用側下面とチャック面との間にすべり
を生じさせることによって容易かつ確実に行なわれる。Next, the operation of this device will be explained. Place the wafer 13 as shown in FIG. 2, and then first place the central electrode 11a.
Apply voltage to. By applying a voltage to the central electrode 11a, the wafer 13 is first attracted to the central portion, and the wafer 13 is attracted to the surface of the dielectric 12a, that is, the chuck surface, even if the wafer 13 is curved so that the center is higher, as shown in FIG. It is adsorbed. The central part of the wafer 13 is attracted by the electrode 11 on the outer circumferential side.
No voltage is applied to /b, llc, and the value of l is drawn to the outside of the wafer 13; production 2 I warm ^ 4 ward ^ urinary urchin... 13 is as shown in Figure 2. Even if it is warped, this can be done easily and reliably by creating a slip between the lower surface of the externally used side of the sea urchin 13 and the chuck surface.
次いで中間の電極１１１）、さらに外側の電極１１ｃへ
と順次電圧を印加すれば、ウニ・・１３は全面が確実に
チャック面へ密着する。Next, by sequentially applying a voltage to the middle electrode 111) and then to the outer electrode 11c, the entire surface of the sea urchin 13 is brought into close contact with the chuck surface.
前述した実施例は、各電極１１ａ、Ｉｌｂ、ＩＩＣを中
央からそれを取り囲む外側方向へ互いに分割した例を示
したが、これに限らず、チャック面上の一側から他側へ
向って分割してもよい等、種々の分割方式を採用し得る
ことは言うまでもない。In the above-described embodiment, the electrodes 11a, Ilb, and IIC are each divided from the center toward the outside surrounding the center, but the present invention is not limited to this. It goes without saying that various division methods can be adopted, such as the following.
また、前述した実施例は、各電極１１ａ、ｌｌｂ、１１
Ｃへの電圧印加開始時期を順次ずらせるようにした例を
示しだが、これに限らず各電極１１ａ。Further, in the embodiment described above, each electrode 11a, llb, 11
Although an example is shown in which the start timing of voltage application to C is sequentially shifted, the present invention is not limited to this.
１１ｂ、１１Ｃへの少なくとも初期印加電圧を変えるこ
とにより、たとえば中央の電極１１ａに最も高い電圧を
印加し、順次外側へいくに従って印加電圧を低くするこ
とにより、全面をチャック面へ密着させるようにしてよ
い。By changing at least the initial voltage applied to electrodes 11b and 11C, for example, applying the highest voltage to the central electrode 11a and gradually lowering the applied voltage toward the outside, the entire surface is brought into close contact with the chuck surface. good.
以上述べたように本発明によれば、半導体ウニ・・など
のように自然状態において反っている被チャック物の反
りを完全に矯正して全面をチャック面に確実に密着させ
ることができる。As described above, according to the present invention, it is possible to completely correct the warpage of an object to be chucked that is warped in its natural state, such as a semiconductor sea urchin, etc., and to bring the entire surface of the object into close contact with the chuck surface.
第１図は従来の静電チャックを示す断面図、第２図は本
発明による静電チャックの断面図、第３図は第２図のＩ
−１［線による断面図である。
１、ｌｌａ、ｌｌｂ、ＩＩＣ−・電極、２．１２ａ、１
２ｂ、１２ｃ ・・・誘電体、３．１３・・・被チャッ
ク物（ウェー・）。
４・・・直流電源、１５・・・基台、
１６ａ、１６ｂ、１６Ｃ・＝リード線、１７・・・アー
ス。
出願人 東芝機械株式会社
第１図
；ｌｔ３図
手 続 補 正 書
１、事件の表示
昭和５８＊特許願第２０４２４１号
２、発明の名称
静電チャック
３、補正をする者
特許出願人
〒１０４
住 所 東京都中央区銀座４丁目２帯１１号名 称 （
３４５）東芝機械株式会社
明細書の「発明の詳細な説明」の欄
５、補正の内容
１）明細ぎ第２頁下から２行FIG. 1 is a sectional view showing a conventional electrostatic chuck, FIG. 2 is a sectional view of an electrostatic chuck according to the present invention, and FIG. 3 is a sectional view showing the I of FIG.
-1 is a sectional view taken along the line. 1, lla, llb, IIC-・electrode, 2.12a, 1
2b, 12c...Dielectric material, 3.13...Object to be chucked (way). 4... DC power supply, 15... Base, 16a, 16b, 16C = lead wire, 17... Earth. Applicant: Toshiba Machine Co., Ltd. Figure 1; lt3 Figure Procedures Amendment 1, Indication of the case 1982* Patent Application No. 204241 2, Name of the invention Electrostatic Chuck 3, Person making the amendment Patent applicant Address: 104 Address No. 11, Ginza 4-chome, Chuo-ku, Tokyo Name (
345) Toshiba Machine Co., Ltd. specification, “Detailed description of the invention” column 5, amendment content 1) 2 lines from the bottom of page 2 of the specification
Claims (1)
電体と、同誘電体の裏面側に配置された電極とからなる
静電チャックにおいて、前記電極をチャック面に沿った
面内において複数個に分割し、それぞれの電極へ別々に
電圧を印加可能にしたことを特徴とする静電チャック。 ２、電極が、チャック面の中央部分と、これを取り囲む
外方部分とに分割されている′特許請求の範囲第１項記
載の静電チャック。 ３、中火部分の電極から外方部分の電極へと順次電圧が
印加されるように構成されている特許請求の範囲第２項
記載の静電チャック。 ４、各電極への印加電圧が異なるように構成されている
特許請求の範囲第１オたけ２項記載の静電チャック。[Claims] 1. An electrostatic chuck consisting of a dielectric material formed of an insulator that attracts an object to be chucked onto the surface thereof, and an electrode disposed on the back side of the dielectric material, wherein the electrode is placed on the chuck surface. An electrostatic chuck characterized by being divided into multiple electrodes in a plane along which a voltage can be applied separately to each electrode. 2. The electrostatic chuck according to claim 1, wherein the electrode is divided into a central portion of the chuck surface and an outer portion surrounding the central portion. 3. The electrostatic chuck according to claim 2, wherein the electrostatic chuck is configured so that a voltage is applied sequentially from the electrode in the middle heat section to the electrode in the outer section. 4. The electrostatic chuck according to claim 1 and 2, wherein the electrostatic chuck is configured such that the voltage applied to each electrode is different.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20424183A JPS6095932A (en) | 1983-10-31 | 1983-10-31 | Electrostatic chuck |
| US06/664,408 US4692836A (en) | 1983-10-31 | 1984-10-24 | Electrostatic chucks |
| DE19843439371 DE3439371A1 (en) | 1983-10-31 | 1984-10-27 | ELECTROSTATIC CLAMPING DEVICE |
| FR848416701A FR2554288B1 (en) | 1983-10-31 | 1984-10-31 | ELECTROSTATIC CHUCKS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20424183A JPS6095932A (en) | 1983-10-31 | 1983-10-31 | Electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6095932A true JPS6095932A (en) | 1985-05-29 |
Family
ID=16487182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20424183A Pending JPS6095932A (en) | 1983-10-31 | 1983-10-31 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6095932A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109972085A (en) * | 2017-12-27 | 2019-07-05 | 佳能特机株式会社 | The manufacturing method of electrostatic chuck, film formation device, the adsorption method of substrate, film build method and electronic equipment |
| JP2020038901A (en) * | 2018-09-04 | 2020-03-12 | 株式会社アルバック | Electrostatic chuck device |
-
1983
- 1983-10-31 JP JP20424183A patent/JPS6095932A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109972085A (en) * | 2017-12-27 | 2019-07-05 | 佳能特机株式会社 | The manufacturing method of electrostatic chuck, film formation device, the adsorption method of substrate, film build method and electronic equipment |
| JP2020038901A (en) * | 2018-09-04 | 2020-03-12 | 株式会社アルバック | Electrostatic chuck device |
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