JPH0615130B2 - Electrostatic check - Google Patents
Electrostatic checkInfo
- Publication number
- JPH0615130B2 JPH0615130B2 JP58204239A JP20423983A JPH0615130B2 JP H0615130 B2 JPH0615130 B2 JP H0615130B2 JP 58204239 A JP58204239 A JP 58204239A JP 20423983 A JP20423983 A JP 20423983A JP H0615130 B2 JPH0615130 B2 JP H0615130B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- chuck
- wafer
- electrostatic chuck
- chucked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、静電チャックに係り、特に半導体ウェハよう
な自然状態において反っていることのある被チャック物
（以下ウェハとして説明する）を平坦などの所定形状に
矯正して支持固定するための静電チャックに関するもの
である。Description: TECHNICAL FIELD The present invention relates to an electrostatic chuck, and in particular, flatten an object to be chucked (hereinafter referred to as a wafer) that may warp in a natural state such as a semiconductor wafer. The present invention relates to an electrostatic chuck for correcting and supporting a fixed shape such as.
従来、この種の静電チャックは、第１図に示すように、
平板状の電極１の表面に、絶縁物からなる薄板ないしは
膜状の誘電体２を付着させ、この誘電体２の表面（以下
チャック面という）に置かれたウェハ３と電極１との間
に直流電源４を接続して両者の間に生ずる電位差により
吸引力を生じさせて、該ウェハ３をチャック面に密着固
定させるようになっていた。この静電チャックの吸引力
は、下式で表わされる。Conventionally, this type of electrostatic chuck has been used as shown in FIG.
A thin plate or a film-like dielectric 2 made of an insulating material is attached to the surface of a flat plate-shaped electrode 1, and a gap between the wafer 3 and the electrode 1 placed on the surface of the dielectric 2 (hereinafter referred to as a chuck surface). The DC power source 4 is connected to generate a suction force due to a potential difference generated between the two, so that the wafer 3 is closely fixed to the chuck surface. The suction force of this electrostatic chuck is expressed by the following equation.
ただし、Ｋは定数、ｎは誘電体２の誘電率、Ｖは電極１
とウェハ３の間の電位差、ａは誘電体２の厚さ、ｂは誘
電体２とウェハ３の間のすき間である。 Where K is a constant, n is the dielectric constant of the dielectric 2, V is the electrode 1
Is the thickness of the dielectric 2 and b is the gap between the dielectric 2 and the wafer 3.
上式から明らかなように吸引力は、電極１とウェハ３と
の間のすき間ｂが小さいところほど大きくなる。そこ
で、第２図に示すようにウェハ３′が中央より外方が高
くなるように反っている場合は問題ないが、第１図に示
すように、中央が高くなるように反っている場合には、
周囲がチャック面に接触もしくは接近しているためによ
り強い吸引力を受け、この周囲部分が先に吸引固定され
てしまう。ウェハ３の中央部は、その後、吸引力によっ
てチャック面に密着されようとするが、この中央部が下
降してチャック面に密着するためには、周囲部分が外方
へすベらなくてはならない。ところが、この周囲部分は
前記のようにすでにチャック面に密着してより強い吸引
力を受けているため、すべることができず、したがって
ウェハ３の中央部をチャック面へ密着させることができ
ず、ウェハ３の反りを完全に矯正することができない。
本願発明者の実験によれば、前記のように中央が高いウ
ェハ３の場合には、第３図に示すように、電極１′をウ
ェハ３の中央部にのみ対向するように小さくすると、ウ
ェハ３の反りを除去してより完全に矯正した状態でチャ
ックできることを確認したが、このような静電チャック
は、第４図に示すように、外方が高くなるように反って
いるウェハ３′の反りの矯正することはできない。な
お、第３図および第４図において、４は基板である。As is clear from the above equation, the suction force becomes larger as the gap b between the electrode 1 and the wafer 3 becomes smaller. Therefore, as shown in FIG. 2, there is no problem when the wafer 3'is warped so that the outside is higher than the center, but when the wafer 3'is warped so that the center is raised as shown in FIG. Is
Since the periphery is in contact with or close to the chuck surface, a stronger suction force is received, and this peripheral portion is suction-fixed first. After that, the central portion of the wafer 3 tends to be brought into close contact with the chuck surface by the suction force. However, in order for the central portion to descend and come into close contact with the chuck surface, the peripheral portion must slide outward. I won't. However, since the peripheral portion is already in close contact with the chuck surface and receives a stronger suction force as described above, it cannot slide, and therefore the central portion of the wafer 3 cannot be in close contact with the chuck surface. The warp of the wafer 3 cannot be completely corrected.
According to the experiment by the inventor of the present application, in the case of the wafer 3 having a high center as described above, when the electrode 1'is made small so as to face only the center of the wafer 3 as shown in FIG. It was confirmed that the chuck can be chucked in a more completely corrected state by removing the warp of No. 3, and such an electrostatic chuck is, as shown in FIG. The warp cannot be corrected. In FIGS. 3 and 4, 4 is a substrate.
本発明の目的は、前述したような欠点を除去し、ウェハ
などの被チェック物が自然状態において前記のようにい
ずれの方向に反っていても該反りをより完全に矯正して
支持固定することのできる静電チャックを提供するにあ
る。It is an object of the present invention to eliminate the above-mentioned drawbacks and to more completely correct the warp even if the object to be checked such as a wafer is warped in any direction as described above in a natural state. It is to provide an electrostatic chuck capable of
かかる目的を達成するための本発明は、一体作動型の電
極を被チャック物に対向するチャック面の全面に及ぶよ
うに設けるのではなく、該チャック面に沿った面内で部
分的に電極が存在しない空白部を適宜な割合で分散配置
させ、電極の密度が中央部で高く周辺部で低くなるよう
したものであり、このような電極形態にすると外方が高
く反っている場合はもちろん中央が高くなるように反っ
ている場合でも反りをより完全に矯正できる。The present invention for achieving such an object does not provide an integrally-actuated electrode so as to extend over the entire chuck surface facing the object to be chucked, but the electrode is partially provided in a plane along the chuck surface. The non-existing blanks are distributed at an appropriate ratio so that the electrode density is high in the central part and low in the peripheral part. The warp can be corrected more completely even if the warp is high.
〔実施例〕 以下本発明の一実施例を示す第５図ないし第６図につい
て説明する。第５図は一体作動型の電極１１の形状を示
すもので、中央から放射状に伸びる複数の突起１１ａか
らなり、各突起１１ａの間に空白部Ａが設けられ、電極
パターンは中央で電極１１の密度が高く、周辺部で低く
なるように形成されている。このようなパターンになさ
れた電極１１が第６図に示すようにセラミック製の基板
１４の表面に付着されている。電極１１の上にはガラス
板からなる誘電体１２が接着法によって貼付けられてい
る。なお、１５は電極１１への給電用のリード線であ
る。前記電極１１の外径Ｄは１２０mmである。[Embodiment] An explanation will be given of FIGS. 5 to 6 showing an embodiment of the present invention. FIG. 5 shows the shape of the electrode 11 of integral operation type, which is composed of a plurality of protrusions 11a extending radially from the center, a blank portion A is provided between each protrusion 11a, and the electrode pattern is formed in the center of the electrode 11. It is formed to have a high density and to be low in the peripheral portion. The electrode 11 having such a pattern is attached to the surface of the ceramic substrate 14 as shown in FIG. A dielectric 12 made of a glass plate is attached on the electrode 11 by an adhesive method. Reference numeral 15 is a lead wire for supplying power to the electrode 11. The outer diameter D of the electrode 11 is 120 mm.
前記のように構成されている静電チャックの誘電体１２
の表面すなわちチャック面に直径が１２５mmのウェハ１
３を載置し、電極１１とウェハ１３との間に４００Ｖの
電位差を与えた。その結果、自然状態において約３０μ
ｍ中央が高くなるように反っていたウェハ１３は高低差
が５μｍ以下にまで減少し、十分に反りが矯正されてい
ることが確認できた。なお、第１図に示すように、電極
１がチャック面の全面に及んでいる静電チャックの場合
には高低差が約１５μｍであった。Dielectric 12 of electrostatic chuck constructed as described above
Wafer with a diameter of 125 mm on the surface of the wafer
3 was placed, and a potential difference of 400 V was applied between the electrode 11 and the wafer 13. As a result, about 30μ in the natural state
It was confirmed that the wafer 13 which had been warped so that the center of the wafer became higher had the height difference reduced to 5 μm or less, and the warpage was sufficiently corrected. As shown in FIG. 1, in the case of an electrostatic chuck in which the electrode 1 covers the entire chuck surface, the height difference was about 15 μm.
また、本発明の静電チャックによれば、第６図に示した
ウェハ１３と逆に反っているウェハはより容易に反りを
矯正することができることは言うまでもない。Further, according to the electrostatic chuck of the present invention, it is needless to say that the warp of the wafer which is the opposite of the wafer 13 shown in FIG. 6 can be corrected more easily.
なお、電極パターンは、第５図に限定されるものではな
く、リングを含む略同心円状のパターンでもよい等、種
々変形可能である。The electrode pattern is not limited to that shown in FIG. 5, but may be variously modified such as a substantially concentric pattern including a ring.
以上述べたように本発明によれば、チャック面に沿った
面内で部分的に空白部を有し、中央部で電極の密度が高
く、周辺部で低くなるように電極パターンを形成するこ
とにより、外方が高くなるように反ったりウェハなどの
被チャック物と中央が高くなるように反った被チャック
物との両方の反りをより完全に矯正して支持固定するこ
とができる。As described above, according to the present invention, an electrode pattern is formed so that a blank part is partially formed in the surface along the chuck surface, the electrode density is high in the central part, and low in the peripheral part. Thus, it is possible to more completely correct the warp of both the object to be chucked such as a wafer or the object to be chucked such as a wafer and the object to be chucked that is warped so that the center becomes higher, and to support and fix the object.
第１図および第２図は従来の静電チャックとそれに対す
る被チャック物との関係を示す概要断面図、第３図およ
び第４図は実験に用いた静電チャックとそれに対する被
チャック物との関係を示す概要断面図、第５図は本発明
による静電チャックの電極パターンの一例を示す平面
図、第６図は第５図のVI−VI線による静電チャックとそ
れに対する被チャック物の関係を示す概要断面図であ
る。 １，１１……電極、２，１２……誘電体、３，３′，１
３……被チャック物、４，１４……基板、１５……リー
ド線。1 and 2 are schematic cross-sectional views showing the relationship between a conventional electrostatic chuck and an object to be chucked thereto, and FIGS. 3 and 4 are electrostatic chucks used in experiments and an object to be chucked therefor. 5 is a plan view showing an example of an electrode pattern of the electrostatic chuck according to the present invention, and FIG. 6 is an electrostatic chuck by the line VI-VI in FIG. 5 and an object to be chucked therefor. FIG. 4 is a schematic cross-sectional view showing the relationship of 1, 11 ... Electrodes, 2, 12 ... Dielectrics, 3, 3 ', 1
3 ... Object to be chucked, 4, 14 ... Substrate, 15 ... Lead wire.
Claims (3)
た誘電体と、同誘電体の裏面側に配置された一体作動形
の電極とからなり、前記チャック面上に載置された被チ
ャック物と前記電極との間に電位差を与えて被チャック
物を吸着する方式の静電チャックにおいて、前記電極が
チャック面に沿った面内で部分的に空白部を有し、電極
の密度が中央部で高く周辺部で低くなるように形成され
ていることを特徴とする静電チャック。1. A dielectric body having a chuck surface whose surface is formed of an insulating material, and an integrally-actuated electrode arranged on the back surface side of the dielectric body, the member being placed on the chuck surface. In an electrostatic chuck of a type in which a potential difference is applied between a chuck object and the electrode to attract an object to be chucked, the electrode has a blank part in a plane along the chuck surface, and the electrode density is An electrostatic chuck characterized in that it is formed so that it is high in the central part and low in the peripheral part.
に形成されている特許請求の範囲第１項記載の静電チャ
ック。2. The electrostatic chuck according to claim 1, wherein the electrodes are formed in a substantially concentric circular pattern including a ring.
るパターンに形成されている特許請求の範囲第１項記載
の静電チャック。3. The electrostatic chuck according to claim 1, wherein the electrode is formed in a pattern composed of a plurality of protrusions extending substantially radially.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58204239A JPH0615130B2 (en) | 1983-10-31 | 1983-10-31 | Electrostatic check |
| US06/664,408 US4692836A (en) | 1983-10-31 | 1984-10-24 | Electrostatic chucks |
| DE19843439371 DE3439371A1 (en) | 1983-10-31 | 1984-10-27 | ELECTROSTATIC CLAMPING DEVICE |
| FR848416701A FR2554288B1 (en) | 1983-10-31 | 1984-10-31 | ELECTROSTATIC CHUCKS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58204239A JPH0615130B2 (en) | 1983-10-31 | 1983-10-31 | Electrostatic check |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6094247A JPS6094247A (en) | 1985-05-27 |
| JPH0615130B2 true JPH0615130B2 (en) | 1994-03-02 |
Family
ID=16487148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58204239A Expired - Lifetime JPH0615130B2 (en) | 1983-10-31 | 1983-10-31 | Electrostatic check |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0615130B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6151284B2 (en) * | 2012-02-29 | 2017-06-21 | エーエスエムエル ネザーランズ ビー．ブイ． | Electrostatic clamp |
| CN112234015B (en) * | 2020-10-12 | 2022-05-13 | 烟台睿瓷新材料技术有限公司 | Electrostatic chuck electrode pattern structure with concentric circle structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57161241U (en) * | 1981-04-03 | 1982-10-09 | ||
| JPS6013740U (en) * | 1983-07-06 | 1985-01-30 | 日本電子株式会社 | Sample holding device |
-
1983
- 1983-10-31 JP JP58204239A patent/JPH0615130B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6094247A (en) | 1985-05-27 |
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