JPS5980968A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPS5980968A JPS5980968A JP19277382A JP19277382A JPS5980968A JP S5980968 A JPS5980968 A JP S5980968A JP 19277382 A JP19277382 A JP 19277382A JP 19277382 A JP19277382 A JP 19277382A JP S5980968 A JPS5980968 A JP S5980968A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- emitter
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 28
- 229920005591 polysilicon Polymers 0.000 claims abstract description 28
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000005468 ion implantation Methods 0.000 abstract description 11
- 150000004767 nitrides Chemical class 0.000 abstract description 11
- 238000002955 isolation Methods 0.000 abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 241000277331 Salmonidae Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19277382A JPS5980968A (ja) | 1982-11-01 | 1982-11-01 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19277382A JPS5980968A (ja) | 1982-11-01 | 1982-11-01 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5980968A true JPS5980968A (ja) | 1984-05-10 |
| JPH0136709B2 JPH0136709B2 (zh) | 1989-08-02 |
Family
ID=16296781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19277382A Granted JPS5980968A (ja) | 1982-11-01 | 1982-11-01 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5980968A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147572A (ja) * | 1984-12-20 | 1986-07-05 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0323698U (zh) * | 1989-07-18 | 1991-03-12 |
-
1982
- 1982-11-01 JP JP19277382A patent/JPS5980968A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147572A (ja) * | 1984-12-20 | 1986-07-05 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0136709B2 (zh) | 1989-08-02 |
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