JPH0136710B2 - - Google Patents

Info

Publication number: JPH0136710B2
Authority: JP; Japan
Prior art keywords: film; silicon; layer; oxide film; forming
Prior art date: 1982-11-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP20129282A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5989458A (ja

Inventor

Tadashi Hirao

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-11-15

Filing date

1982-11-15

Publication date

1989-08-02

1982-11-15 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1982-11-15 Priority to JP20129282A priority Critical patent/JPS5989458A/ja

1984-05-23 Publication of JPS5989458A publication Critical patent/JPS5989458A/ja

1989-08-02 Publication of JPH0136710B2 publication Critical patent/JPH0136710B2/ja

Status Granted legal-status Critical Current

Links

229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
229920005591 polysilicon Polymers 0.000 claims description 27
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
229910052710 silicon Inorganic materials 0.000 claims description 18
239000010703 silicon Substances 0.000 claims description 18
238000000034 method Methods 0.000 claims description 14
229910052751 metal Inorganic materials 0.000 claims description 13
239000002184 metal Substances 0.000 claims description 13
229910021332 silicide Inorganic materials 0.000 claims description 12
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
238000004519 manufacturing process Methods 0.000 claims description 11
239000000758 substrate Substances 0.000 claims description 11
230000003647 oxidation Effects 0.000 claims description 10
238000007254 oxidation reaction Methods 0.000 claims description 10
239000004065 semiconductor Substances 0.000 claims description 8
239000012535 impurity Substances 0.000 claims description 5
238000002161 passivation Methods 0.000 claims description 5
238000000605 extraction Methods 0.000 claims description 4
229910052581 Si3N4 Inorganic materials 0.000 claims description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
229910052814 silicon oxide Inorganic materials 0.000 claims description 2
238000000151 deposition Methods 0.000 claims 2
239000010410 layer Substances 0.000 description 52
150000004767 nitrides Chemical class 0.000 description 15
238000002955 isolation Methods 0.000 description 9
230000015572 biosynthetic process Effects 0.000 description 6
238000005468 ion implantation Methods 0.000 description 6
239000005360 phosphosilicate glass Substances 0.000 description 5
229920002120 photoresistant polymer Polymers 0.000 description 5
238000010586 diagram Methods 0.000 description 4
238000005530 etching Methods 0.000 description 4
238000009792 diffusion process Methods 0.000 description 3
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
230000001590 oxidative effect Effects 0.000 description 2
238000001020 plasma etching Methods 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
238000000926 separation method Methods 0.000 description 2
ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
229910021074 Pd—Si Inorganic materials 0.000 description 1
239000002253 acid Substances 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
238000000137 annealing Methods 0.000 description 1
239000010953 base metal Substances 0.000 description 1
239000011247 coating layer Substances 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
229910052914 metal silicate Inorganic materials 0.000 description 1
229910052763 palladium Inorganic materials 0.000 description 1
238000000059 patterning Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
238000001259 photo etching Methods 0.000 description 1
229910021339 platinum silicide Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Bipolar Transistors (AREA)

JP20129282A 1982-11-15 1982-11-15 半導体装置の製造方法 Granted JPS5989458A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP20129282A JPS5989458A (ja)	1982-11-15	1982-11-15	半導体装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP20129282A JPS5989458A (ja)	1982-11-15	1982-11-15	半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
JPS5989458A JPS5989458A (ja)	1984-05-23
JPH0136710B2 true JPH0136710B2 (zh)	1989-08-02

Family

ID=16438557

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP20129282A Granted JPS5989458A (ja)	1982-11-15	1982-11-15	半導体装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPS5989458A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0611053B2 (ja) *	1984-12-20	1994-02-09	三菱電機株式会社	半導体装置の製造方法
JPH0611055B2 (ja) *	1985-11-13	1994-02-09	三菱電機株式会社	半導体装置の製造方法
US4933295A (en) *	1987-05-08	1990-06-12	Raytheon Company	Method of forming a bipolar transistor having closely spaced device regions
US5064773A (en) *	1988-12-27	1991-11-12	Raytheon Company	Method of forming bipolar transistor having closely spaced device regions

1982
- 1982-11-15 JP JP20129282A patent/JPS5989458A/ja active Granted

Also Published As

Publication number	Publication date
JPS5989458A (ja)	1984-05-23

Publication	Publication Date	Title
JPH0418463B2 (zh)	1992-03-27
JPS62237754A (ja)	1987-10-17	半導体集積回路装置及びその製造方法
JPH0241170B2 (zh)	1990-09-14
US4691436A (en)	1987-09-08	Method for fabricating a bipolar semiconductor device by undercutting and local oxidation
JPH0611053B2 (ja)	1994-02-09	半導体装置の製造方法
US4728618A (en)	1988-03-01	Method of making a self-aligned bipolar using differential oxidation and diffusion
JPH0136710B2 (zh)	1989-08-02
JPH0135505B2 (zh)	1989-07-25
JPS5942987B2 (ja)	1984-10-18	半導体装置の製造方法
JPH0254662B2 (zh)	1990-11-22
JPH0318738B2 (zh)	1991-03-13
JPH0437581B2 (zh)	1992-06-19
JPH0136709B2 (zh)	1989-08-02
JPH0130310B2 (zh)	1989-06-19
JPH0420263B2 (zh)	1992-04-02
JPH0418461B2 (zh)	1992-03-27
JPS61108169A (ja)	1986-05-26	半導体装置
JPS63146466A (ja)	1988-06-18	ベース・エミッタコンタクト構成体及びその製造方法
JPS6246072B2 (zh)	1987-09-30
JPS645472B2 (zh)	1989-01-30
JPS6286753A (ja)	1987-04-21	半導体装置の製造方法
JPS5989459A (ja)	1984-05-23	半導体装置の製造方法
JPH0157506B2 (zh)	1989-12-06
JPS612363A (ja)	1986-01-08	半導体装置の製造方法
JPH0418462B2 (zh)	1992-03-27