JPS59232904A - Manufacture of electrically conductive thin film - Google Patents
Manufacture of electrically conductive thin filmInfo
- Publication number
- JPS59232904A JPS59232904A JP58104961A JP10496183A JPS59232904A JP S59232904 A JPS59232904 A JP S59232904A JP 58104961 A JP58104961 A JP 58104961A JP 10496183 A JP10496183 A JP 10496183A JP S59232904 A JPS59232904 A JP S59232904A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- conductive thin
- carrier gas
- manufacture
- electrically conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000012159 carrier gas Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010408 film Substances 0.000 abstract description 5
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 239000003779 heat-resistant material Substances 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052734 helium Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000002345 surface coating layer Substances 0.000 abstract description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- CBYDUPRWILCUIC-UHFFFAOYSA-N 1,2-diethynylbenzene Chemical compound C#CC1=CC=CC=C1C#C CBYDUPRWILCUIC-UHFFFAOYSA-N 0.000 abstract 1
- MVLGANVFCMOJHR-UHFFFAOYSA-N 1,4-diethynylbenzene Chemical compound C#CC1=CC=C(C#C)C=C1 MVLGANVFCMOJHR-UHFFFAOYSA-N 0.000 abstract 1
- 238000010790 dilution Methods 0.000 abstract 1
- 239000012895 dilution Substances 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000008043 acidic salts Chemical class 0.000 description 1
- -1 alicyclic hydrocarbons Chemical class 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F11/00—Chemical after-treatment of artificial filaments or the like during manufacture
- D01F11/10—Chemical after-treatment of artificial filaments or the like during manufacture of carbon
- D01F11/12—Chemical after-treatment of artificial filaments or the like during manufacture of carbon with inorganic substances ; Intercalation
- D01F11/125—Carbon
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/282—Carbides, silicides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
Abstract
Description
【発明の詳細な説明】
本発明は、導電性薄膜の製造方法に関する。従来、炭素
系の導電性薄膜を得る方法として、メタン、エタン等の
脂肪族炭化水素またはベンゼン等の芳香族炭化水素の気
相熱分解法が最も重要な方法の一つとして考えられ、こ
れまで多くの製造方法が提案されてきた。しかし、反応
温度は一般にく鋭意検討した結果、ジェチニルベンゼン
を出発原料として用いることにより、比較的低い加熱温
度範囲でも充分高い導電性をもつ薄膜が得られることを
見い出し、本発明を成すに到った。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a conductive thin film. Conventionally, gas phase pyrolysis of aliphatic hydrocarbons such as methane and ethane or aromatic hydrocarbons such as benzene has been considered as one of the most important methods for obtaining carbon-based conductive thin films. Many manufacturing methods have been proposed. However, as a result of careful study of the reaction temperature in general, it was discovered that by using jetynylbenzene as a starting material, a thin film with sufficiently high conductivity could be obtained even at a relatively low heating temperature range, and the present invention was realized. It has arrived.
すなわち本発明は、ジェチニルベンゼンを希ガス又は窒
素のキャリアガスと共に５００℃以上に加熱して得るこ
とを特徴とする導電性薄膜の製造方法である。本発明の
製造方法の目的は前述した如く導電性薄膜の製造にある
が、この薄膜は単独使用以外にも多くの耐熱材料、炭素
、セラミックある。また、本発明による導電性薄膜とは
、金属なみの高い電導度は勿論のこと、半導体領域の電
導度をもつ薄膜をも含んでいる。That is, the present invention is a method for producing a conductive thin film, which is characterized in that it is obtained by heating jetynylbenzene together with a rare gas or a nitrogen carrier gas to 500° C. or higher. As mentioned above, the purpose of the manufacturing method of the present invention is to manufacture a conductive thin film, but this thin film can be made of many heat-resistant materials such as carbon and ceramics in addition to being used alone. Further, the conductive thin film according to the present invention includes not only a thin film having a high conductivity comparable to that of a metal but also a thin film having a conductivity of a semiconductor region.
本発明において使用するジェチニルベンゼンにはオルト
位、メタ位、メタ位の三種類あるが、いづれを用いても
よく、また、単独のほか混合して使用してもよい。さら
に他の脂肪族炭化水素、脂環族炭化水素、芳香族炭化水
素、不飽和炭化水素等と混合して使用することも可能で
ある。ジェチニルベンゼンをキャリアーガスと共に加熱
雰囲気下に導入しやすくするために、ジエテニルペンゼ
ンをその融点近くさらには融点以上に前段階で加熱して
使用することができる。これらのジェチニルベンゼンを
キャリヤーガスで通常／〜ｊＯチ、好ましくはＪ−，２
θ係の濃度に希釈して加熱雰囲気下に導入するのが好ま
しい。There are three types of jetynylbenzene used in the present invention: ortho position, meta position, and meta position, and any of them may be used, and they may be used alone or in a mixture. Furthermore, it is also possible to use it in combination with other aliphatic hydrocarbons, alicyclic hydrocarbons, aromatic hydrocarbons, unsaturated hydrocarbons, etc. In order to facilitate the introduction of dietynylbenzene together with the carrier gas into the heated atmosphere, diethenylbenzene can be used by heating it in the previous step near its melting point or even above its melting point. These jetynylbenzenes are usually mixed with a carrier gas, preferably J-,2
It is preferable to dilute it to a concentration of θ and introduce it into a heated atmosphere.
本発明に′おいて使用するキャリアーガスとしては、ヘ
リウム、アルゴン等の希ガス又は窒素ガスである。これ
らの不活性ガス以外に水素の使用も可能である。キャリ
アーガスの流量は、例えば円筒の内径がグθ■の場合θ
、θ／〜ｓ ｔ７５’ｌ、好ましくは０．０５〜７０分
である。The carrier gas used in the present invention is a rare gas such as helium or argon, or nitrogen gas. In addition to these inert gases, hydrogen can also be used. For example, if the inner diameter of the cylinder is θ, the flow rate of the carrier gas is θ.
, θ/~s t75'l, preferably 0.05 to 70 minutes.
以上のジェチニルベンゼンを含むガス状の原料を夕Ｏθ
℃〜３３θＯ℃（３３００℃以上は電気伝導度向上の効
果がない）、好ましくは乙０θ℃〜／ ０００℃の電気
炉等の加熱雰囲気下に導入することにより、目的の導電
性薄膜が得られる。膜厚／μｍ程度の導電性薄膜を得る
には数分〜数７θ分程度で十分である。この膜厚はキャ
リアーガスの流量との関係で決まり、前記の所要時間よ
りさらに短縮することも可能である。Gaseous raw material containing jetinylbenzene was heated at Oθ
The desired conductive thin film can be obtained by introducing it into a heated atmosphere such as an electric furnace at a temperature of ℃ to 33θ℃ (3300℃ or higher has no effect of improving electrical conductivity), preferably 0℃ to 000℃. . Several minutes to several 7θ minutes are sufficient to obtain a conductive thin film with a film thickness of about 7 μm. This film thickness is determined by the relationship with the flow rate of the carrier gas, and it is also possible to further shorten the required time.
本発明の方法で得られる導電性薄膜を、他の多くの耐熱
性材料の表面被覆層として使用することができる。具体
的には石英、ガラス、窒化ホウ素、窒化ケイ素、酸化ア
ルミ、シリコン、ゲルマニウム、インジウムアンチモン
、ガリウムヒ素等の無機材料＃に、銅、アルミニウム、
ニッケル、ステンレス等の金属材料、グラファイト、グ
ラファイト繊維、炭素繊維、カーボン粉末等の炭素材料
等が使用される。基盤としてＮａＣｔ、 ＫＢｒ等のエ
ピタキシャル重合に用いられる結晶性基盤、さらにはグ
レーティング等のグラフオエピタキシャル成長（＝用い
られる基盤をも、勿論使用することができる。The conductive thin film obtained by the method of the invention can be used as a surface coating layer for many other heat-resistant materials. Specifically, inorganic materials such as quartz, glass, boron nitride, silicon nitride, aluminum oxide, silicon, germanium, indium antimony, gallium arsenide, copper, aluminum,
Metal materials such as nickel and stainless steel, carbon materials such as graphite, graphite fibers, carbon fibers, and carbon powder are used. As a substrate, it is of course possible to use a crystalline substrate used for epitaxial polymerization such as NaCt or KBr, or even a substrate used for graphite epitaxial growth such as a grating.
上記の方法は触媒を使用しない製造方法であるが、触媒
を用いる方法もまた可能である。触媒としては鉄、コバ
ルト、ニッケル等の金属及びそれらの塩化物、酸化物、
酸性塩、塩基性塩等をあげることができる。Although the above method is a production method without using a catalyst, a method using a catalyst is also possible. Catalysts include metals such as iron, cobalt, and nickel, as well as their chlorides and oxides.
Examples include acidic salts and basic salts.
また、本発明の導電性薄膜の電気型導度はドーピング及
びインタカレーション等により向上させ得る。ドーパン
ト及びインフカラントとしては、ポリアセチレンおよび
グラファイトの研究で公知の物質を使用することができ
る。Furthermore, the electrical type conductivity of the conductive thin film of the present invention can be improved by doping, intercalation, and the like. As dopants and infucalants it is possible to use the substances known from polyacetylene and graphite research.
本発明の製造方法は加熱原料にジェチニルベンゼンを用
いたところに特徴があり、比較的低い加熱温度範囲で十
分高い電導性の薄膜を提供する。The manufacturing method of the present invention is characterized in that it uses jetynylbenzene as a heating raw material, and provides a thin film with sufficiently high conductivity in a relatively low heating temperature range.
この薄膜は導電性薄膜材料としてエレクトロニクス分野
で広範囲に応用されうるものである。This thin film can be widely applied in the electronics field as a conductive thin film material.
以下、実施例により本発明をさらに具体的に説明する。Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例／
内径グθ■の石英製の反応管内に／♂■角の石英基板を
入れ、その反応管を電気炉で後述温度に加熱する。加熱
された反応管内に！θ℃に前加熱されたｐ−ジェチニル
ベンゼンをアルゴンキャリアーガスと共に７０分間導入
する。そのときのガス流量は００５４分、ｐ−ジェチニ
ルベンゼンはキャリアーガスで／θチ程度の濃度に希釈
したものである。その結果、黒輝色の導電性薄膜（膜厚
約θ、！μｍ）が石英基板上に得られた。四端子法によ
−！−
りこの薄膜の電気伝導度を測定した。その測定結果を、
電気炉の加熱温度と対比させて次に示す。Example/ A quartz substrate with a square /♂■ corner is placed in a quartz reaction tube with an inner diameter of θ■, and the reaction tube is heated to a temperature described later in an electric furnace. Inside the heated reaction tube! p-jethynylbenzene preheated to θ° C. is introduced with argon carrier gas for 70 minutes. The gas flow rate at that time was 0054 minutes, and p-jethynylbenzene was diluted with a carrier gas to a concentration of about /θ. As a result, a bright black conductive thin film (film thickness approximately θ, !μm) was obtained on the quartz substrate. By the four terminal method! - The electrical conductivity of Riko's thin film was measured. The measurement results are
The following is a comparison with the heating temperature of an electric furnace.
加熱温度（Ｃ） 電気伝導度（Ω′″ＩＩＭ−’
）ｊ θ θ ℃ θ、乙
りＯＯ″ｃ 、２０
９ θ Ｉ！７’Ｃｔｏ θ
実施例コ
ｐ−ジェチニルベンゼンの代ｋ） Ｅ ｍ−ジェチニル
ベンゼンを用い、ガス流量θ、３々分１ｍ−ジェチニル
ベンゼンのキャリアガス中濃度が／タチである以外は、
実施例／の場合と同じ方法で石英基板上に黒輝色の導電
性薄膜（膜厚約θ、３μｍ）を得た。その電気伝導度と
電気炉の加熱温度との関係は次に示すとおりである。Heating temperature (C) Electric conductivity (Ω'''IIM-'
)j θ θ °C θ, OO″c , 20 9 θ I!7′Cto θ Example Co p-jethynylbenzene k) E Using m-jethynylbenzene, gas flow rate θ, 3 except that the concentration of 1m-jethynylbenzene in the carrier gas is /tati.
A bright black conductive thin film (film thickness approximately θ, 3 μm) was obtained on a quartz substrate in the same manner as in Example. The relationship between the electrical conductivity and the heating temperature of the electric furnace is as shown below.
加熱温度ｃＣ） 電気伝導度（Ω−１ｃｌｎ−１）
！θ ０℃ θ、ｌｒ７ θ
０℃ ／ｆり００℃
グＯθ
特許出願人 工業技術院長
一乙 −Heating temperature cC) Electric conductivity (Ω-1cln-1)
! θ 0℃ θ, lr7 θ
0℃ /fri00℃
GuOθ Patent applicant Kazuotsu, Director of the Agency of Industrial Science and Technology −
Claims (1)
共に、５００℃以上に加熱して得ることを特徴とする導
電性薄膜の製造方法A method for producing a conductive thin film, characterized in that it is obtained by heating jetynylbenzene to 500°C or higher together with a rare gas or nitrogen carrier gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104961A JPS59232904A (en) | 1983-06-14 | 1983-06-14 | Manufacture of electrically conductive thin film |
| US06/904,823 US4701317A (en) | 1983-06-14 | 1986-09-08 | Highly electroconductive films and process for preparing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104961A JPS59232904A (en) | 1983-06-14 | 1983-06-14 | Manufacture of electrically conductive thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59232904A true JPS59232904A (en) | 1984-12-27 |
Family
ID=14394692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58104961A Pending JPS59232904A (en) | 1983-06-14 | 1983-06-14 | Manufacture of electrically conductive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59232904A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60226405A (en) * | 1984-04-24 | 1985-11-11 | Japan Synthetic Rubber Co Ltd | Production of electrically conductive material |
| JPS62202809A (en) * | 1986-02-28 | 1987-09-07 | Sharp Corp | Production of thermally decomposed graphite |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57143321A (en) * | 1981-03-03 | 1982-09-04 | Japan Synthetic Rubber Co Ltd | Conjugated polymer and its preparation |
| JPS57207329A (en) * | 1981-06-15 | 1982-12-20 | Kanebo Ltd | Organic type semiconductor and manufacture thereof |
-
1983
- 1983-06-14 JP JP58104961A patent/JPS59232904A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57143321A (en) * | 1981-03-03 | 1982-09-04 | Japan Synthetic Rubber Co Ltd | Conjugated polymer and its preparation |
| JPS57207329A (en) * | 1981-06-15 | 1982-12-20 | Kanebo Ltd | Organic type semiconductor and manufacture thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60226405A (en) * | 1984-04-24 | 1985-11-11 | Japan Synthetic Rubber Co Ltd | Production of electrically conductive material |
| JPH0347303B2 (en) * | 1984-04-24 | 1991-07-18 | Japan Synthetic Rubber Co Ltd | |
| JPS62202809A (en) * | 1986-02-28 | 1987-09-07 | Sharp Corp | Production of thermally decomposed graphite |
| JPH048367B2 (en) * | 1986-02-28 | 1992-02-14 | Sharp Kk |
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