JPS5914353U - Light emitting/light receiving device - Google Patents
Light emitting/light receiving deviceInfo
- Publication number
- JPS5914353U JPS5914353U JP10796082U JP10796082U JPS5914353U JP S5914353 U JPS5914353 U JP S5914353U JP 10796082 U JP10796082 U JP 10796082U JP 10796082 U JP10796082 U JP 10796082U JP S5914353 U JPS5914353 U JP S5914353U
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving device
- emitting
- receiving
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図はこの考案の一実施例による発光・受光装置の部
分断面斜視図、第2図は同上装置の製造過程を示す図、
第3図および第4図は同上装置の −動作を説明す
るための図である。
1・・・・・・基板、−100・・・・・・発光素子、
200・・・・・・受光素子、71・・・・・・カソー
ド、コレクタ兼用電極、8・・・・・・エミッタ電極パ
ッド、9・・・・・・ベース電極パッド、10・・・・
・・アノード電極、11・・・・・・アノード電極パッ
ド。FIG. 1 is a partial cross-sectional perspective view of a light emitting/light receiving device according to an embodiment of the invention, and FIG. 2 is a diagram showing the manufacturing process of the same device.
3 and 4 are diagrams for explaining the operation of the above device. 1...Substrate, -100...Light emitting element,
200... Light receiving element, 71... Cathode and collector electrode, 8... Emitter electrode pad, 9... Base electrode pad, 10...
...Anode electrode, 11...Anode electrode pad.
Claims (1)
かつ上記受光素子の受光面の中心部に上記発光素子の発
光面を配置するとともに、上記発光素子および受光素子
の各リードアウトワイヤボンディング領域を上記受光面
の外周部に配置したことを特徴とする発光・受光装置。A light emitting element and a light receiving element are integrated on the same semiconductor substrate,
The light-emitting surface of the light-emitting element is arranged at the center of the light-receiving surface of the light-receiving element, and each lead-out wire bonding area of the light-emitting element and the light-receiving element is arranged at the outer periphery of the light-receiving surface. Light emitting/light receiving device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10796082U JPS5914353U (en) | 1982-07-16 | 1982-07-16 | Light emitting/light receiving device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10796082U JPS5914353U (en) | 1982-07-16 | 1982-07-16 | Light emitting/light receiving device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5914353U true JPS5914353U (en) | 1984-01-28 |
Family
ID=30252056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10796082U Pending JPS5914353U (en) | 1982-07-16 | 1982-07-16 | Light emitting/light receiving device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5914353U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5466789A (en) * | 1977-10-18 | 1979-05-29 | Thomson Csf | Diode for generating and detecting light of predetermined wavelength |
JPS5598880A (en) * | 1979-01-20 | 1980-07-28 | Nec Corp | Light transmitting/receiving semiconductor device |
-
1982
- 1982-07-16 JP JP10796082U patent/JPS5914353U/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5466789A (en) * | 1977-10-18 | 1979-05-29 | Thomson Csf | Diode for generating and detecting light of predetermined wavelength |
JPS5598880A (en) * | 1979-01-20 | 1980-07-28 | Nec Corp | Light transmitting/receiving semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5914353U (en) | Light emitting/light receiving device | |
JPS60141129U (en) | Terminal structure of leadless chip carrier | |
JPS6120051U (en) | Semiconductor device envelope | |
JPS61149344U (en) | ||
JPS58182447U (en) | light emitting device | |
JPS5829850U (en) | Composite semiconductor device | |
JPS58187146U (en) | semiconductor equipment | |
JPS5974745U (en) | darlington transistor | |
JPS58168149U (en) | transistor | |
JPS5889956U (en) | light emitting diode element | |
JPS58164255U (en) | Light emitting light receiving element | |
JPS5937730U (en) | semiconductor equipment | |
JPS6165766U (en) | ||
JPS59169044U (en) | Semiconductor chip adsorption nozzle | |
JPS6364035U (en) | ||
JPS6120063U (en) | Semiconductor device with built-in resistor | |
JPS58131634U (en) | transistor support | |
JPS59166457U (en) | light emitting diode element | |
JPS5892750U (en) | Variable light emitter structure | |
JPS59138253U (en) | light emitting diode assembly | |
JPS58114054U (en) | Optical semiconductor device | |
JPS59135652U (en) | transistor | |
JPS58124965U (en) | Multi-element photoelectric conversion device | |
JPS6190245U (en) | ||
JPS60125741U (en) | semiconductor equipment |