JPS5598880A - Light transmitting/receiving semiconductor device - Google Patents

Light transmitting/receiving semiconductor device

Info

Publication number
JPS5598880A
JPS5598880A JP580879A JP580879A JPS5598880A JP S5598880 A JPS5598880 A JP S5598880A JP 580879 A JP580879 A JP 580879A JP 580879 A JP580879 A JP 580879A JP S5598880 A JPS5598880 A JP S5598880A
Authority
JP
Japan
Prior art keywords
light
layer
substrate
emitting portion
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP580879A
Other languages
Japanese (ja)
Other versions
JPS6133273B2 (en
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP580879A priority Critical patent/JPS5598880A/en
Publication of JPS5598880A publication Critical patent/JPS5598880A/en
Publication of JPS6133273B2 publication Critical patent/JPS6133273B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To improve the performance of a light transmitting/receiving semiconductor device by forming a light emitting portion and a light receiving portion on the same substrate and transmitting and receiving light independently at time.
CONSTITUTION: An n-type Al0.35Ga0.65As layer 2, an Al0.56Ga0.95As active layer 3, and an Al0.35Ga0.65As layer 4 are sequentially laminated on an n-type GaAs substrate 1, the substrate 1 is then polished, and a wafer of approx. 70μm is formed thereon. A Cr-Au electrode 6 having a circular opening is formed on the layer 4 side, and an Au-Ge-Ni electrode 7 is formed on the substrate 1. This substrate 1 is heat treated in H2 to form ohmic electrodes. Then, a groove 8 of 20μm of width is formed through the circular opening to reach the layer 2. Thus, the pn-junction is isolated into light emitting portion and light receiving portion. The light emitting portion E irradiates light modulated according to an electric input signal to couple it to an optical fiber 9. The light receiving portion D receives the light coming from the fiver 9 to generate a photocurrent, which is produced through a resistor R1 as an output signal. Thus, the light is bilaterally transmitted through the optical fiber without particular light circuit element.
COPYRIGHT: (C)1980,JPO&Japio
JP580879A 1979-01-20 1979-01-20 Light transmitting/receiving semiconductor device Granted JPS5598880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP580879A JPS5598880A (en) 1979-01-20 1979-01-20 Light transmitting/receiving semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP580879A JPS5598880A (en) 1979-01-20 1979-01-20 Light transmitting/receiving semiconductor device

Publications (2)

Publication Number Publication Date
JPS5598880A true JPS5598880A (en) 1980-07-28
JPS6133273B2 JPS6133273B2 (en) 1986-08-01

Family

ID=11621374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP580879A Granted JPS5598880A (en) 1979-01-20 1979-01-20 Light transmitting/receiving semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598880A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778186A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Optical fiber transceiving composite device
JPS57115882A (en) * 1981-01-09 1982-07-19 Mitsubishi Electric Corp Two way light transmitting circuit
JPS57139976A (en) * 1981-02-23 1982-08-30 Omron Tateisi Electronics Co Light emitting/receiving device
JPS5914353U (en) * 1982-07-16 1984-01-28 オムロン株式会社 Light emitting/light receiving device
US4485391A (en) * 1980-10-28 1984-11-27 Thomson-Csf Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems
US4607368A (en) * 1981-11-30 1986-08-19 Fujitsu Limited Optical semiconductor device
JPS6235587A (en) * 1985-08-08 1987-02-16 Sanyo Electric Co Ltd Light emitting element
US4910571A (en) * 1987-04-21 1990-03-20 Nec Corporation Optical semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485391A (en) * 1980-10-28 1984-11-27 Thomson-Csf Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems
JPS5778186A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Optical fiber transceiving composite device
JPS57115882A (en) * 1981-01-09 1982-07-19 Mitsubishi Electric Corp Two way light transmitting circuit
JPS57139976A (en) * 1981-02-23 1982-08-30 Omron Tateisi Electronics Co Light emitting/receiving device
US4614958A (en) * 1981-02-23 1986-09-30 Omron Tateisi Electronics Co. Light emitting and receiving device
US4607368A (en) * 1981-11-30 1986-08-19 Fujitsu Limited Optical semiconductor device
JPS5914353U (en) * 1982-07-16 1984-01-28 オムロン株式会社 Light emitting/light receiving device
JPS6235587A (en) * 1985-08-08 1987-02-16 Sanyo Electric Co Ltd Light emitting element
US4910571A (en) * 1987-04-21 1990-03-20 Nec Corporation Optical semiconductor device

Also Published As

Publication number Publication date
JPS6133273B2 (en) 1986-08-01

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