JPS59143353A - Manufacture of electronic component parts - Google Patents
Manufacture of electronic component partsInfo
- Publication number
- JPS59143353A JPS59143353A JP1766183A JP1766183A JPS59143353A JP S59143353 A JPS59143353 A JP S59143353A JP 1766183 A JP1766183 A JP 1766183A JP 1766183 A JP1766183 A JP 1766183A JP S59143353 A JPS59143353 A JP S59143353A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- chip
- hole
- solder
- terminal part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明はガラスエポキシ、紙フェノール等からなる基板
の端子部にLSIチップをボンディングして形成される
電子部品の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to the structure of an electronic component formed by bonding an LSI chip to a terminal portion of a substrate made of glass epoxy, paper phenol, or the like.
〈従来技術〉
従来の電子部品はマスク蒸着法により端子部にCr層、
CrCu層およびCu層を順に形成し、さらにその上に
半田メッキを施したLSIチップをボンディング装置を
使用して基板に設けられた端子部にボンディングして構
成されている。<Prior art> Conventional electronic components have a Cr layer,
It is constructed by sequentially forming a CrCu layer and a Cu layer, and then bonding an LSI chip, which is solder-plated thereon, to a terminal portion provided on a substrate using a bonding device.
即ち、第1図乃至第3図に示す通り、まずLSIチップ
lのAt端子2にCr層3、CrCu層4、Cu層5を
蒸着し、その上に半田メッキ層6を形成する。そして、
このように構成したLSIチップ1の端子部6′ヲ基板
7の端子8に位置合せし、半田メッキ層6を溶かして前
記両端子部を接続している。That is, as shown in FIGS. 1 to 3, first, a Cr layer 3, a CrCu layer 4, and a Cu layer 5 are deposited on the At terminal 2 of the LSI chip 1, and a solder plating layer 6 is formed thereon. and,
The terminal portions 6' of the LSI chip 1 thus constructed are aligned with the terminals 8 of the substrate 7, and the solder plating layer 6 is melted to connect the two terminal portions.
しかしながら、このような接続構造によれば、半田メッ
キ層6の形成具合によってLSIチップ端子の高さにバ
ラツキが生じ、ボンディング時に基板端子に全く接続さ
れないものとか接続不良のものが発生するという欠点が
あった。また、半田メッキの際の高熱がLSIチップに
悪影響を与え、良品率の低下を招くという問題があり、
さらに半田メッキ部分が光学的に見えにくいので基板端
子部への位置合せが困難となり、作業能率が悪いという
欠点があった。However, this connection structure has the drawback that the height of the LSI chip terminals varies depending on the formation condition of the solder plating layer 6, and some terminals may not be connected to the board terminals at all or there may be poor connections during bonding. there were. In addition, there is the problem that the high heat during solder plating has a negative effect on LSI chips, leading to a decrease in the quality of products.
Furthermore, since the solder plated portion is optically difficult to see, it is difficult to align the solder plated portion to the terminal portion of the board, resulting in poor work efficiency.
〈目的〉
本発明はかかる従来の欠点に鑑みて成されたもので、L
SIチップ端子への半田メッキ処理工程を省略して、ボ
ンディング時の良品率の向上並びに位置合せ作業能率の
向上が図れる新規な電子部の構造を提供せんとするもの
である。<Purpose> The present invention has been made in view of such conventional drawbacks, and
It is an object of the present invention to provide a new structure of an electronic part that can omit the solder plating process for SI chip terminals and improve the rate of non-defective products during bonding and the efficiency of alignment work.
〈実施例〉 以下図に基づいて本発明の詳細な説明する。<Example> The present invention will be described in detail below based on the figures.
第4図乃至第6図は本発明に係る電子部品の構造を説明
する図である。まず、LSIチップ1のAt端子2には
従来通りマスク蒸着法によりCr層3、CrCu層4及
びCu層5が形成されており(第4図参照)、この様に
形成された端子部9は基板7の端子8に穿設されたスル
ーホール10に挿入され、接着剤11によって該LSI
チップ1と基板7が仮固定される(第5図参照)。そし
て、仮固定されたLSIチップ1と基板7は半田ディプ
装置のディピング槽に通され、これによりスルーホール
10内に半田12が流れ込み凝固して前(3)
記LSIチップの端子部9と基板端子8が半田接続され
ている。4 to 6 are diagrams for explaining the structure of the electronic component according to the present invention. First, a Cr layer 3, a CrCu layer 4, and a Cu layer 5 are formed on the At terminal 2 of the LSI chip 1 by conventional mask evaporation method (see FIG. 4), and the terminal portion 9 formed in this way is The LSI is inserted into a through hole 10 made in a terminal 8 of a board 7, and is attached with an adhesive 11.
The chip 1 and the substrate 7 are temporarily fixed (see FIG. 5). Then, the temporarily fixed LSI chip 1 and the board 7 are passed through a dipping tank of a solder dipping device, whereby the solder 12 flows into the through hole 10 and solidifies. Terminal 8 is connected by solder.
かかる電子部品の構造によれば、At端子2にCr +
Cr Cu、 Cu k マスク蒸着してなるLS
Iチップlの端子部9をそのまま基板端子のスルーホー
ル10に挿入し、接着剤11にてLSIチップ1を基板
7に仮止めするとともに、これ全ディピング槽に通すこ
とによりスルーホール10に流れ込んだ半田12が凝固
してLSIチップ端子部9と基板端子8を接続できるか
ら、前記チップ端子部9への半田メッキ処理が不要とな
る。このため、メッキ処理工程の省略と熱によるLSI
チップへの悪影響を防止することが出来るとともに、基
板端子8のスルーホール11にLSIチップ端子部9を
挿入するために位置合せが容易となる。According to the structure of such an electronic component, Cr +
LS made by Cr Cu, Cu k mask vapor deposition
The terminal part 9 of the I-chip 1 was inserted into the through-hole 10 of the board terminal as it was, and the LSI chip 1 was temporarily fixed to the board 7 with adhesive 11, and all of it flowed into the through-hole 10 by passing it through a dipping bath. Since the solder 12 solidifies and the LSI chip terminal portion 9 and the board terminal 8 can be connected, the solder plating process to the chip terminal portion 9 becomes unnecessary. For this reason, the plating process is omitted and LSI
Not only can an adverse effect on the chip be prevented, but also alignment is facilitated in order to insert the LSI chip terminal portion 9 into the through hole 11 of the board terminal 8.
〈効果〉
以上の様に本発明は、基板端子部にスルーホールを形成
し且つこのスルーホールにLSIチップ前記LSIチッ
プ端子と前記基板端子を半田接続してなるから製造工程
中LSIチップ端子への半田メッキ処理工程全省略する
ことが出来、また凹凸関係によって端子間の位置合せが
容易に行える等良品率の向上並びに位置合せ作業の向上
を図ることが出来る。<Effects> As described above, in the present invention, a through hole is formed in the board terminal portion and the LSI chip terminal of the LSI chip and the board terminal are connected to the through hole by soldering. The entire solder plating process can be omitted, and the unevenness makes it possible to easily align the terminals, thereby improving the yield rate and alignment work.
第1図乃至第3図は従来の電子部品の構造及びその製造
工程を説明する図、第4図乃至第6図は本発明に係る電
子部品の構造及びその製造工程を説明する図である。
lはLSIチップ、2はAt端子、7は基板。
8は端子、9はLSIチップ端子部、10はスル−ホー
ル、11は接着剤、12は半田
代理人 弁理士 福 士 愛 彦 (他2名)第1図
第2図
γ
第3図1 to 3 are diagrams for explaining the structure of a conventional electronic component and its manufacturing process, and FIGS. 4 to 6 are diagrams for explaining the structure of an electronic component and its manufacturing process according to the present invention. 1 is an LSI chip, 2 is an At terminal, and 7 is a board. 8 is a terminal, 9 is an LSI chip terminal part, 10 is a through hole, 11 is an adhesive, 12 is a solder agent, patent attorney Yoshihiko Fukushi (and 2 others), Figure 1, Figure 2, γ Figure 3
Claims (1)
成される電子部品に於て、 前記基板端子部にスルーホールを形成し、且つこのスル
ーホールに前記LSIチップの端子部を挿入し、該LS
Iチップと基板とを接着固定するとともに、前記スルー
ホール部において前記LSIチップ端子と前記基板端子
を半田接続してなることを特徴とする電子部品の構造。[Claims] 1. In an electronic component formed by bonding an LSI chip to a terminal portion of a substrate, a through hole is formed in the terminal portion of the substrate, and the terminal portion of the LSI chip is inserted into the through hole. Insert the LS
1. A structure of an electronic component, characterized in that an I-chip and a substrate are bonded and fixed, and the LSI chip terminal and the substrate terminal are connected by solder at the through-hole portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1766183A JPS59143353A (en) | 1983-02-04 | 1983-02-04 | Manufacture of electronic component parts |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1766183A JPS59143353A (en) | 1983-02-04 | 1983-02-04 | Manufacture of electronic component parts |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59143353A true JPS59143353A (en) | 1984-08-16 |
Family
ID=11950029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1766183A Pending JPS59143353A (en) | 1983-02-04 | 1983-02-04 | Manufacture of electronic component parts |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59143353A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2622741A1 (en) * | 1987-11-04 | 1989-05-05 | Nec Corp | Structure for connecting substrates with different thermal expansion coefficients |
JPH01198040A (en) * | 1988-02-03 | 1989-08-09 | Omron Tateisi Electron Co | Mounting of semiconductor element |
JPH03179756A (en) * | 1990-11-02 | 1991-08-05 | Seikosha Co Ltd | Ic chip |
-
1983
- 1983-02-04 JP JP1766183A patent/JPS59143353A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2622741A1 (en) * | 1987-11-04 | 1989-05-05 | Nec Corp | Structure for connecting substrates with different thermal expansion coefficients |
JPH01198040A (en) * | 1988-02-03 | 1989-08-09 | Omron Tateisi Electron Co | Mounting of semiconductor element |
JPH03179756A (en) * | 1990-11-02 | 1991-08-05 | Seikosha Co Ltd | Ic chip |
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