JPS5910265A - Photosensor array device - Google Patents
Photosensor array deviceInfo
- Publication number
- JPS5910265A JPS5910265A JP57118587A JP11858782A JPS5910265A JP S5910265 A JPS5910265 A JP S5910265A JP 57118587 A JP57118587 A JP 57118587A JP 11858782 A JP11858782 A JP 11858782A JP S5910265 A JPS5910265 A JP S5910265A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- diode
- photoelectric conversion
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000903 blocking effect Effects 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000002161 passivation Methods 0.000 abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光センサアレイ装置に係わり、特にファクシミ
リ送信装置などの密着形光センザアレイ装置に用いられ
るラインセンサの構造の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical sensor array device, and more particularly to an improvement in the structure of a line sensor used in a contact type optical sensor array device such as a facsimile transmission device.
近年、ファクシミリ送信装置の小形化、高速度化および
高信頼化を目的として密着形読み取り方式の光センサア
レイ装置が提案されている。この光センサアレイ装置は
、透光性ガラス基板上に光電変換機能を有する、例えば
アモルファスシリコン薄膜ダイオードを８本／、、（約
１２５μＷＬ）程度のピッチで多数本並列配置して形成
したラインセンサを送信原稿に密着させて１：１の比率
で読み取るようにしたものである。この場合、送信原稿
がＡ４サイズ（約２２０ｍｍ）では、ライセ／すは約１
７６０本のアルファスシリコン薄膜ダイオードと、この
ダイオードに直列接続されて光電変換信号の廻シ込みに
よって生じるクロストークを防止するブロッキングダイ
オードと、その読み出し信号を外部へ引き出すマトリッ
クス配線が必要となる。In recent years, contact type optical sensor array devices have been proposed for the purpose of making facsimile transmission devices smaller, faster, and more reliable. This optical sensor array device includes a line sensor formed by arranging a large number of amorphous silicon thin film diodes, for example, amorphous silicon thin film diodes having a photoelectric conversion function in parallel at a pitch of about 8/, (approximately 125 μWL) on a transparent glass substrate. It is designed to be placed in close contact with the original to be sent and read at a ratio of 1:1. In this case, if the original to be sent is A4 size (approximately 220 mm), the size of the paper will be approximately 1
This requires 760 Alphas silicon thin film diodes, a blocking diode connected in series to these diodes to prevent crosstalk caused by the input of photoelectric conversion signals, and matrix wiring to extract the readout signals to the outside.
第１図は密着形光センサアレイ装置に係わるラインセン
サの一例を示す要部断面構成図である。FIG. 1 is a cross-sectional configuration diagram of essential parts showing an example of a line sensor related to a contact type optical sensor array device.
同図において、１は図示しない送信原稿が密着される透
光性ガラス基板、２は基板１上に例えば配列方向に１２
５μｍピッチで約１７６０組形成されかつ一組が直線方
向に所定間隔で配列して形成されたＡｔ電極であり、２
ａは共通電極、２ｂは中継電極、２ｃは個別電極、３は
中継を極２ｂの一端上に仮Ｍ形成されたアモルファスシ
リコンからなる光電変換用フォトダイオード、４は中継
電極２ｂの他端上に被着形成されたアモルファスシリコ
ンからなるクロストーク防止用ブロッキングダイオード
、５はフォトダイオード３およびブロッキングダイオー
ド４の断面部分を保護する５ｉＯｚなどカラするパッシ
ベーション膜、ｓｒａパッシベーション膜５上に被着形
成されかつフォトダイオード３と共通電惜２ａとを電気
的に接続する透明導電膜からなる透明電極、Ｉはパッシ
ベーション膜５上に被着形成されかつブロッキングダイ
オード４と個別電極２ａとを電気的に接続するＡｔ蒸着
膜からなる上部電極、８は個別電極２ｃ上に被着形成さ
れたＡｔ蒸着膜からなるマトリックス配線、９はその接
続部である。In the figure, reference numeral 1 denotes a translucent glass substrate (not shown) to which a transmission document is closely attached, and 2 denotes 12, for example, 12
Approximately 1760 sets of At electrodes are formed at a pitch of 5 μm, and one set is arranged at a predetermined interval in a linear direction, and 2
a is a common electrode, 2b is a relay electrode, 2c is an individual electrode, 3 is a photodiode for photoelectric conversion made of amorphous silicon with a temporary M formed on one end of the relay electrode 2b, and 4 is a relay electrode on the other end of the relay electrode 2b. A crosstalk prevention blocking diode 5 made of amorphous silicon is deposited on the sra passivation film 5, which is a color passivation film such as 5iOz that protects the cross-sectional portions of the photodiode 3 and the blocking diode 4. A transparent electrode made of a transparent conductive film that electrically connects the diode 3 and the common electrode 2a, I is an At evaporated electrode formed on the passivation film 5 and electrically connects the blocking diode 4 and the individual electrode 2a. An upper electrode made of a film, 8 a matrix wiring made of an At vapor-deposited film formed on the individual electrode 2c, and 9 a connecting portion thereof.
このように構成されたラインセンサにおいては、図示し
ない送信原稿からの反射光を検出して光電変換させるフ
ォトダイオード３とマトリックス配線８のクロストーク
を防止するブロッキングダイオード４とが分離して形成
されているため、ダイオード３，４の断面を短絡防止す
る手段として必要があった。この場合、このパッシベー
ションＭ５上に上部電極７を設けるにはこのパッシベー
ション膜５にスルホールを形成しなければならず、この
ためにはパッシベーション膜５とブロッキングダイオー
ド４との選択エツチングを高精度で行なう必要があり、
したがってラインセンサの歩留シを犬１−に低下させる
という問題があった。In the line sensor configured in this way, a photodiode 3 that detects reflected light from a transmission document (not shown) and converts it into electricity, and a blocking diode 4 that prevents crosstalk between matrix wiring 8 are formed separately. Therefore, it was necessary as a means to prevent the cross sections of the diodes 3 and 4 from being short-circuited. In this case, in order to provide the upper electrode 7 on the passivation M5, a through hole must be formed in the passivation film 5, and for this purpose, it is necessary to perform selective etching between the passivation film 5 and the blocking diode 4 with high precision. There is,
Therefore, there was a problem in that the yield rate of the line sensor was reduced to 1-.
したがって本発明は、前述した欠点に鑑みてなされたも
のであり、その目的とするところは、フォトダイオード
とブロッキングダイオードとを一体的に構成することに
よって、パッシベーション膜を不要とさせるとともに、
ダイオードの断面の短絡を防止させたラインセンサを有
する元センサアレイ装置を提供することにある。以下、
図面を用いて本発明の実施例を詳細に説明する。Therefore, the present invention has been made in view of the above-mentioned drawbacks, and its purpose is to eliminate the need for a passivation film by integrally configuring a photodiode and a blocking diode, and to
An object of the present invention is to provide a sensor array device having a line sensor in which short circuits in the cross sections of diodes are prevented. below,
Embodiments of the present invention will be described in detail using the drawings.
第２図および第３図は本発明による光センサアレイ装置
に係わるラインセンサの一例を示す図で、第２図は要部
平面構成図、第３図はそのＡ−Ａ’断面図であり、第１
図と同記号は同一要素となるのでその説明は省略する。2 and 3 are diagrams showing an example of a line sensor related to the optical sensor array device according to the present invention, FIG. 2 is a plan configuration diagram of the main part, and FIG. 3 is a sectional view taken along the line AA'. 1st
Since the same symbols as those in the figure represent the same elements, their explanation will be omitted.
これらの図において、透光性ガラス基板１上に形成され
た共通電極２ａと個別電極２ｃとの対向端間には島状に
ｐ、ｉ、ｎ形アモルファスシリコン膜１０が被着形成さ
れ、さらにこのシリコン膜１００周縁部を除く中央部分
にはＡｔ蒸着膜からなる上部電極７が被着形成されてい
る。そして、共通電極２ａの対向端上に形成されたシリ
コン膜１０および上部電極Ｉ上には透明４電膜からなる
光入射用の透明電極６が被着形成されてこの透明電極６
．上部１極７と共通電極２ａ間には光を検出して光電変
換信号なうフ第１・ダイオード１１が構成され、一方シ
リコン膜１０の個別電４ｍ２ｃと上部電極７との間には
マトリックス配線８からの光電変換信号の７Ａ＃）込み
によって生じるクロストーク防止用ブロッキングダイオ
ード１２が構成されている。なお、この場合、シリコン
Ｍ１０の上部中央部分に形成された上部電極７は、フォ
トダイオード１１とブロッキングダイオード１２とを電
気的に直列接続する尋電機能を有し、この両ダイオード
１１．１２は一体的に構成されている。In these figures, a p-, i-, and n-type amorphous silicon film 10 is formed in an island shape between the opposing ends of a common electrode 2a and an individual electrode 2c formed on a transparent glass substrate 1, and An upper electrode 7 made of an At vapor-deposited film is formed on the central portion of the silicon film 100 excluding the peripheral portion. A transparent electrode 6 for light incidence made of a transparent four-electrode film is formed on the silicon film 10 and the upper electrode I formed on the opposite ends of the common electrode 2a.
．． A first diode 11 is formed between the upper electrode 7 and the common electrode 2a to detect light and generate a photoelectric conversion signal, while a matrix wiring is formed between the individual electrode 4m2c of the silicon film 10 and the upper electrode 7. A blocking diode 12 for preventing crosstalk caused by the photoelectric conversion signal 7A#) from 8 is configured. In this case, the upper electrode 7 formed in the upper central part of the silicon M10 has a function of electrically connecting the photodiode 11 and the blocking diode 12 in series, and these diodes 11 and 12 are integrally connected. It is structured as follows.
このようにして構成されたラインセンサによれば、フォ
トダイオード１１とブロッキングダイオード１２との接
続配線において、Ａｔ蒸着膜からなる上部電極７がシリ
コン膜１０の断面に接触しない構成となり、したがって
フォトダイオード１１およびブロッキングダイオード１
２を短絡させることがなくなる。また、フォトダイオー
ド１１とブロッキングダイオード１２との間隔を１解以
上距離を離間させて構成することによって、シリコン膜
１０のドーピングｊ−１つまり共通電極２ａおよび個別
電極２ｃ上に最初に形成されるシリコン膜１０のｐ層を
流れる電θＩＬも、この両軍物２ａ＋２ｃ間のリーク抵
抗が数ＭΩとなるので、極めて少なくなシ、実用土何ら
全く問題はない。この結果、シリコン膜１０と上部電極
７との間に８１０２などのパッシベーション膜５（第１
図参照）を設ける必要性が全くなくなり、したがって構
造の簡単なラインセンサが生産性良く得られる。According to the line sensor configured in this way, in the connection wiring between the photodiode 11 and the blocking diode 12, the upper electrode 7 made of the At vapor-deposited film does not come into contact with the cross section of the silicon film 10, and therefore the photodiode 11 and blocking diode 1
2 will not be short-circuited. Furthermore, by configuring the photodiode 11 and the blocking diode 12 to be separated by a distance of one solution or more, the doping j-1 of the silicon film 10, that is, the silicon initially formed on the common electrode 2a and the individual electrodes 2c. The electric current θIL flowing through the p-layer of the membrane 10 is also extremely small and poses no problem in practical use since the leakage resistance between the two components 2a+2c is several MΩ. As a result, a passivation film 5 such as 8102 (first
(see figure) is completely eliminated, and therefore a line sensor with a simple structure can be obtained with high productivity.
以上説明したように本発明による光センサアレイ装置に
よれば、光電変換機能を有するフォトダイオードとクロ
ストーク防止用ブロッキングダイオードとを一体的に構
成したことによって、このダイオードと、両ダイオード
相互間を電気的に接続配縁する電極との絶縁膜としての
パッシベーションが不要となるとともに、ダイオードと
パッシベーション膜との高精度な選択エツチング工程が
不要となるので、ダイオードの断面方向の短絡が皆無と
なるとともに、ラインセンサの歩留りを大幅に向上させ
ることができるなどの極めて優れた効果が得られる。As explained above, according to the optical sensor array device according to the present invention, the photodiode having a photoelectric conversion function and the blocking diode for crosstalk prevention are integrally configured, so that the electrical connection between this diode and both diodes is prevented. This eliminates the need for passivation as an insulating film between the diode and the electrodes that are to be connected and arranged, and also eliminates the need for a highly accurate selective etching process between the diode and the passivation film, which eliminates short circuits in the cross-sectional direction of the diode. Extremely excellent effects such as the ability to significantly improve the yield of line sensors can be obtained.
第１図は機業されている密層形光センサアレイ装置に係
わるラインセンサの一例を示す要部断面図、第２図およ
び第３図は本発明による密着形光センサアレイ装置に係
わるラインセンサの一例を示す袂部平面構成図およびそ
のＡ−Ａ’断面図である。
１・・・・透光性ガラス基板、２ａ・・・・共通電極、
２ｃ・・・・個別電極、６・・・・透明電極、７・・・
・上部電極、８・・・・マトリックス配線、９・・・・
接続部、１０・・・・アモルファスシリコン膜、１１・
・・参フォトダイオード、１２＠−・・ブロッキングダ
イオード。FIG. 1 is a sectional view of a main part showing an example of a line sensor related to a close-contact type optical sensor array device that is currently in use, and FIGS. 2 and 3 are line sensors related to a close-contact type optical sensor array device according to the present invention. FIG. 2 is a plan view of the sleeve part and a sectional view taken along line AA' thereof, showing an example of the structure. 1... Transparent glass substrate, 2a... Common electrode,
2c...Individual electrode, 6...Transparent electrode, 7...
・Top electrode, 8... Matrix wiring, 9...
Connection portion, 10...Amorphous silicon film, 11.
・・Reference photodiode, 12@−・・Blocking diode.
Claims (1)
能を有するフォトダイオードと、前記フォトダイオード
に直列接続されて光電変換信号のクロストークを防止す
るブロッキングダイオードと、前記光電変換信号を外部
へ引き出すマトリックス配線とからなるラインセンサを
具備してなる光センサアレイ装置において、前記フォト
ダイオードと前記ブロッキングダイオードとを一体構成
したことを特徴とする光センサアレイ装置。A plurality of photodiodes having a photoelectric conversion function formed and arranged on a transparent glass substrate, a blocking diode connected in series to the photodiode to prevent crosstalk of the photoelectric conversion signal, and a blocking diode for transmitting the photoelectric conversion signal to the outside. What is claimed is: 1. A photosensor array device comprising a line sensor consisting of a matrix wiring drawn out, characterized in that the photodiode and the blocking diode are integrated.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118587A JPS5910265A (en) | 1982-07-09 | 1982-07-09 | Photosensor array device |
| US06/511,333 US4607168A (en) | 1982-07-09 | 1983-07-06 | Photosensor array devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118587A JPS5910265A (en) | 1982-07-09 | 1982-07-09 | Photosensor array device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5910265A true JPS5910265A (en) | 1984-01-19 |
Family
ID=14740272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57118587A Pending JPS5910265A (en) | 1982-07-09 | 1982-07-09 | Photosensor array device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5910265A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7671435B2 (en) | 2005-09-29 | 2010-03-02 | Samsung Electronics Co., Ltd. | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
-
1982
- 1982-07-09 JP JP57118587A patent/JPS5910265A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7671435B2 (en) | 2005-09-29 | 2010-03-02 | Samsung Electronics Co., Ltd. | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
| US10249677B2 (en) | 2005-09-29 | 2019-04-02 | Samsung Electronics Co., Ltd. | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
| US11094732B2 (en) | 2005-09-29 | 2021-08-17 | Samsung Electronics Co., Ltd. | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
| US11152419B2 (en) | 2005-09-29 | 2021-10-19 | Samsung Electronics Co., Ltd. | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
| US11862660B2 (en) | 2005-09-29 | 2024-01-02 | Samsung Electronics Co., Ltd. | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
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