JPS6177375A - Color sensor - Google Patents
Color sensorInfo
- Publication number
- JPS6177375A JPS6177375A JP59199006A JP19900684A JPS6177375A JP S6177375 A JPS6177375 A JP S6177375A JP 59199006 A JP59199006 A JP 59199006A JP 19900684 A JP19900684 A JP 19900684A JP S6177375 A JPS6177375 A JP S6177375A
- Authority
- JP
- Japan
- Prior art keywords
- photo
- isc2
- isc1
- wavelength
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000010586 diagram Methods 0.000 abstract description 15
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 101150079996 Isc1 gene Proteins 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100277915 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DMC1 gene Proteins 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〈発明の技術分野〉
本発明は光起電力素子である非晶質太陽電池の光電効果
を利用して構成されたカラーセンサに関するものである
。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a color sensor configured using the photoelectric effect of an amorphous solar cell, which is a photovoltaic element.
〈発明の技術的背景とその問題点〉
従来より、単結晶Ｓｉチップの中に受光素子を二重に作
り込んで、Ｓｉの厚さをフィルタとじて用いるようにし
た半導体カラーセンサやフィルタを用いたカラーセンサ
が提案され、実用化されている。<Technical background of the invention and its problems> Conventionally, semiconductor color sensors and filters have been used in which light-receiving elements are built double in a single-crystal Si chip and the thickness of the Si is used as a filter. A color sensor has been proposed and put into practical use.
第５図は従来の単結晶ミリコンを用いたカラーセンサの
構造を示す概略図、第６図はその等価回路図であり、図
中ｌはＰ層、２はＮ層、３はＰ層を示し、また４、５．
６はそれぞれ電極を示している。Fig. 5 is a schematic diagram showing the structure of a conventional color sensor using single-crystal microconductors, and Fig. 6 is its equivalent circuit diagram. In the figure, l indicates the P layer, 2 indicates the N layer, and 3 indicates the P layer. , also 4, 5.
6 each indicates an electrode.
この第５図に示すカラーセンサは単結晶シリコンチップ
中に受光素子を二重に作り込むことによりＳｉの厚さを
フィルター吉して用いるタイプの半導体カラーセンサで
あり、このカラーセンサでは浅い方のＰＮ接合によるフ
ォトダイオードＤＩと深い方のＰＮ接合によるフォトダ
イオードＤ２の分光感度特性の違いを利用するものであ
り、浅い方のＰＮ接合によるフォトダイオードＤＩは短
波長感度が大であり、深い方のＰＮ接合によるフォトダ
イオードＤ２は長波長感度が大である。この２つのフォ
トダイオードＩ）１ 、Ｄ２の短絡電流比が波長に対し
てｌ対ｌに対応することを利用して第５図に示すカラー
センサは色の判別を行なうことができる。The color sensor shown in Fig. 5 is a semiconductor color sensor of the type in which the light-receiving elements are built double in a single-crystal silicon chip, and the thickness of the Si is filtered. This utilizes the difference in spectral sensitivity characteristics between the photodiode DI with a PN junction and the photodiode D2 with a deeper PN junction.The photodiode DI with a shallower PN junction has greater short wavelength sensitivity; The photodiode D2 made of a PN junction has high long wavelength sensitivity. The color sensor shown in FIG. 5 can discriminate colors by utilizing the fact that the short-circuit current ratio of these two photodiodes I)1 and D2 corresponds to 1 to 1 with respect to wavelength.
しかし、上記第５図に示した単結晶カラーセンサは製造
工程が複雑であシ、シリコンの厚さも１０μｍ以上にす
る必要がある等の問題点を有していた。However, the single-crystal color sensor shown in FIG. 5 has problems such as a complicated manufacturing process and the need for a silicon thickness of 10 μm or more.
第７図は従来の非晶質シリコンを用いたカラーセンサの
構造を示す概略図、第８図はその等価回路図であり、図
中１１は非晶質シリコン、１２は透明導電膜、Ｉ３はガ
ラス基板、１４〜１６はそれぞれＲ，Ｇ、Ｈに対応した
色フィルタ、１７〜２０はそれぞれ電極である。FIG. 7 is a schematic diagram showing the structure of a conventional color sensor using amorphous silicon, and FIG. 8 is its equivalent circuit diagram. In the figure, 11 is amorphous silicon, 12 is a transparent conductive film, and I3 is a transparent conductive film. A glass substrate, 14 to 16 are color filters corresponding to R, G, and H, respectively, and 17 to 20 are electrodes, respectively.
このような第７図に示した非晶質シリコンを用いたカラ
ーセンサはシリコンの厚さを薄くすることが出来るが、
三種類の色フィルタを用いる必要がある等の問題点を有
している。Although the color sensor using amorphous silicon shown in FIG. 7 can be made thinner,
This method has problems such as the need to use three types of color filters.
〈発明の目的〉
本発明は上記諸点に鑑みてなされたものであり、シリコ
ン層の厚さを薄くする事が出来ると共に特別に色フィル
タを用いる必要がなく、製造工程の簡単な構造のカラー
センサを提供することを目的とし、この目的を達成する
ため、本発明のカラーセンサは基板と、この基板上に形
成された第１の非晶質光起電力素子と、この第１の非晶
質光起電力素子上に形成された透明絶縁層と、この透明
絶縁層上に形成された第２の非晶質光起電力素子とを備
えるように構成されている。<Object of the Invention> The present invention has been made in view of the above points, and provides a color sensor that can reduce the thickness of the silicon layer, does not require the use of a special color filter, and has a simple manufacturing process. To achieve this objective, the color sensor of the present invention includes a substrate, a first amorphous photovoltaic element formed on the substrate, and a first amorphous photovoltaic element formed on the substrate. It is configured to include a transparent insulating layer formed on a photovoltaic element and a second amorphous photovoltaic element formed on this transparent insulating layer.
〈発明の実施例〉
以下、図面を参照して本発明の一実施例を詳細に説明す
る。<Embodiment of the Invention> Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例の構造を示す図である０
第１図において、２１は導電性基板あるいは導電性薄膜
を形成した絶縁性基板、２２は非晶質シリコンＰ（ある
いはＮ）層、２３は非晶質７９３７１層、２４は非晶質
シリコンＮ（あるいはＰ）層、２５は透明導電膜、２６
ｆｄ透明絶縁膜、２７は透明導電膜、２８は非晶質シリ
コンＰ（あるいはＮ）層、２９は非晶質７９３７１層、
３０は非晶質シリコンＮ（あるいはＰ）層、３１は透明
導電膜、８２．８Ｂ、８４．８５はそれぞれ電極であり
、基板２１上にボロン（あるいはリン）をドープした厚
さａｏ、０５μｍ以下の非晶質シリコンＰ（あるいはＮ
）層２２、ノンドープ乃至ボロンを微量ドープした厚さ
劾０．５μｍ前後の非晶質シリコ７１層２３、リン（あ
るいはボロン）をドープした厚さ１０．０５μｍ以下の
非晶質シリコンＮ（あるいはＰ）層２４、透明導電膜２
５、透明絶縁膜２６、透明はＮ）層２８、ノンドープ乃
至ボロンを微量ドープした厚さ約０．５μｍ前後の非晶
質７９３７１層２９、リン（あるいはボロン）をドープ
した厚さ句ｏ、ｏ５μｍ以下の非晶質シリコンＮ（ある
いはＰ）層３０及び透明導電膜３１がこの順に積層形成
きれており、上記基板（導電性）２１に電極３２が形成
され、透明導電膜２５に電極３３が形成され、透明導電
膜２７に電極３４が形成され、透明導電膜３１に電極３
５が形成されている。FIG. 1 is a diagram showing the structure of an embodiment of the present invention. In FIG. 1, 21 is a conductive substrate or an insulating substrate on which a conductive thin film is formed, and 22 is amorphous silicon P (or N). 23 is an amorphous 79371 layer, 24 is an amorphous silicon N (or P) layer, 25 is a transparent conductive film, 26
fd transparent insulating film, 27 a transparent conductive film, 28 an amorphous silicon P (or N) layer, 29 an amorphous 79371 layer,
30 is an amorphous silicon N (or P) layer, 31 is a transparent conductive film, 82.8B and 84.85 are electrodes, and the substrate 21 is doped with boron (or phosphorus) and has a thickness ao of 05 μm or less. of amorphous silicon P (or N
) layer 22, undoped or slightly boron-doped amorphous silicon 71 layer 23, amorphous silicon N (or P) doped with phosphorus (or boron) and a thickness of 10.05 μm or less ) layer 24, transparent conductive film 2
5. Transparent insulating film 26, transparent (N) layer 28, non-doped or amorphous 79371 layer 29 doped with a small amount of boron and approximately 0.5 μm in thickness, doped with phosphorus (or boron) and having a thickness of o, o5 μm The following amorphous silicon N (or P) layer 30 and transparent conductive film 31 are laminated in this order, an electrode 32 is formed on the substrate (conductive) 21, and an electrode 33 is formed on the transparent conductive film 25. An electrode 34 is formed on the transparent conductive film 27, and an electrode 3 is formed on the transparent conductive film 31.
5 is formed.
上記構成において、Ｐ（あるいはＮ）層２２゜１層２３
及びＮ（あるいはＰ）層２４によってＰＩＮ構造の非晶
質太陽電池からなる第１の非晶質光起電力素子（ホトダ
イオード）ＰＤ２が構成され、Ｐ（あるいはＮ）層２８
．■層２９及びＮ（あるいはＰ）層３０によってＰＩＮ
構造の非晶質太陽電池からなる第２の非晶質光起電力素
子（ホトダイオード）ＰＤＩが構成されておシ、上記第
１図に示した非晶質カラーセンサは独立した二個の非晶
質光起電力素子ＰＤＩ及びＰＤ２とが１チツプとなって
おり、その等価回路を第２図に示す。In the above structure, the P (or N) layer 22゜1 layer 23
A first amorphous photovoltaic element (photodiode) PD2 consisting of an amorphous solar cell with a PIN structure is constituted by the N (or P) layer 24, and the P (or N) layer 28
．． ■ PIN by layer 29 and N (or P) layer 30
The second amorphous photovoltaic element (photodiode) PDI is composed of an amorphous solar cell with a structure, and the amorphous color sensor shown in FIG. The photovoltaic elements PDI and PD2 are integrated into one chip, and the equivalent circuit thereof is shown in FIG.
次に上記第１図に示した本発明の一実施例のカラーセン
サの動作を説明する０
第１図忙おいて透明導電膜３Ｉ側から光（Ｌ）が入射す
ると、受光面に近いホトダイオードＰＤＩは短波感度が
大となり、深い方のホトダイオードＰＤ２は長波長感度
が大となり、これらの分光感度特性を第３図に示してい
る０
とのホトダイオードＰＤＩ、ＰＤ２の受光による短絡電
流をそれぞれＩ ＳＣＩ 、 Ｉ ＳＣ２とすると、電
流比ｌＳＣ２／■ｓｃｌの波長依存性は第４図に示すよ
うになリ、短絡電流の比ｌＳＣ２／ｌ５ＣＩは波長に対
して１対１の関係があり、ある色の光を受光したときの
ホトダイオードＰＤＩ及びＰＤ２の短絡電流を測定して
電流比Ｉ ＳＣ２／ Ｉ ＳＣＩを求めることにより、
第４図に示す特性にもとづいて受光した光の波長を決定
することが出来る。Next, we will explain the operation of the color sensor according to the embodiment of the present invention shown in FIG. 1. In FIG. has a high short-wave sensitivity, and the deeper photodiode PD2 has a high long-wavelength sensitivity.The spectral sensitivity characteristics of these are shown in Figure 3.The short-circuit current due to light reception by the photodiodes PDI and PD2 with 0 is I SCI, respectively. Assuming ISC2, the wavelength dependence of the current ratio lSC2/■scl is as shown in Figure 4, and the short-circuit current ratio lSC2/l5CI has a one-to-one relationship with the wavelength. By measuring the short circuit current of photodiodes PDI and PD2 when receiving light and finding the current ratio I SC2 / I SCI,
The wavelength of the received light can be determined based on the characteristics shown in FIG.
〈発明の効果〉
以上の説明から明らかなように、本発明によれば非晶質
光起電力素子を用いてカラーセンサを構成することが出
来、半導体素子層の厚さを従来の半導体カラーセンサに
比して薄くすることが出来ると共に、特別に色フィルタ
を用いることなくカラーセンサを構成することが出来、
従来に比して製造工程を簡略化することが出来、容易に
そして安価に作製することが可能となる。<Effects of the Invention> As is clear from the above description, according to the present invention, a color sensor can be constructed using an amorphous photovoltaic element, and the thickness of the semiconductor element layer can be made smaller than that of a conventional semiconductor color sensor. It is possible to make the color sensor thinner than the conventional color filter, and it is also possible to configure a color sensor without using a special color filter.
The manufacturing process can be simplified compared to the conventional method, and it can be manufactured easily and at low cost.
第１図は本発明のカラーセンサの一実施例の構成を示す
概略図、第２図はその等価回路を示す図、第３図は本発
明のカラーセンサの分光感度特性を示す図、第４図は短
絡電流比の波長依存性を示す図、第５図は従来のカラー
センサの構造を示す概略図、第６図はその等価回路を示
す図、第７図は従来のカラーセンサの他の例を示す概略
図、第８図はその等価回路を示す図である。
２１・・・基板、２２．２８・・・非晶質７９３７２層
、２３．２９・・・非晶質７９３７１層、２４．８０・
・・非晶質シリコンＮ層、２５，２７．８１・・・透明
導電膜、２６・・・透明絶縁膜、３２〜３５・・・電極
、Ｌ・・・光、ＰＤＩ・・・第２の非晶質光起電力素子
、ＰＤ２・・・第１の非晶質光起電力素子。FIG. 1 is a schematic diagram showing the configuration of an embodiment of the color sensor of the present invention, FIG. 2 is a diagram showing its equivalent circuit, FIG. 3 is a diagram showing the spectral sensitivity characteristics of the color sensor of the present invention, and FIG. The figure shows the wavelength dependence of the short-circuit current ratio, Figure 5 is a schematic diagram showing the structure of a conventional color sensor, Figure 6 is a diagram showing its equivalent circuit, and Figure 7 is a diagram of other conventional color sensors. A schematic diagram showing an example, and FIG. 8 is a diagram showing its equivalent circuit. 21... Substrate, 22.28... 79372 amorphous layers, 23.29... 79371 amorphous layers, 24.80.
...Amorphous silicon N layer, 25,27.81...Transparent conductive film, 26...Transparent insulating film, 32-35...Electrode, L...Light, PDI...Second Amorphous photovoltaic element, PD2...first amorphous photovoltaic element.
Claims (1)
力素子と、該第１の非晶質光起電力素子上に形成された
透明絶縁層と、該透明絶縁層上に形成された第２の非晶
質光起電力素子とを備えて成ることを特徴とするカラー
センサ。1. A substrate, a first amorphous photovoltaic element formed on the substrate, a transparent insulating layer formed on the first amorphous photovoltaic element, and on the transparent insulating layer and a second amorphous photovoltaic element formed in the color sensor.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59199006A JPS6177375A (en) | 1984-09-21 | 1984-09-21 | Color sensor |
| DE19853533298 DE3533298A1 (en) | 1984-09-21 | 1985-09-18 | COLOR SENSOR |
| GB8523284A GB2166289A (en) | 1984-09-21 | 1985-09-20 | Colour sensitive photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59199006A JPS6177375A (en) | 1984-09-21 | 1984-09-21 | Color sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6177375A true JPS6177375A (en) | 1986-04-19 |
Family
ID=16400535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59199006A Pending JPS6177375A (en) | 1984-09-21 | 1984-09-21 | Color sensor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6177375A (en) |
| DE (1) | DE3533298A1 (en) |
| GB (1) | GB2166289A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3934246A1 (en) * | 1989-10-13 | 1991-04-25 | Messerschmitt Boelkow Blohm | Photosensitive PIN diode stack - has sensor formed with extra auxiliary diodes in individual main diode layers |
| US6300612B1 (en) | 1998-02-02 | 2001-10-09 | Uniax Corporation | Image sensors made from organic semiconductors |
| US6940061B2 (en) * | 2002-02-27 | 2005-09-06 | Agilent Technologies, Inc. | Two-color photo-detector and methods for demosaicing a two-color photo-detector array |
| DE102008016100A1 (en) * | 2008-03-28 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelectronic radiation detector and method for producing a plurality of detector elements |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516479A (en) * | 1978-07-21 | 1980-02-05 | Sumitomo Electric Ind Ltd | Heterojunction light receiving diode |
| IT1194594B (en) * | 1979-04-19 | 1988-09-22 | Rca Corp | SOLAR CELLS OF AMORPHOUS SILICON WITH TANDEM JUNCTIONS |
| IE52209B1 (en) * | 1980-09-09 | 1987-08-05 | Energy Conversion Devices Inc | Multiple cell photoresponsive amorphous alloys and devices |
-
1984
- 1984-09-21 JP JP59199006A patent/JPS6177375A/en active Pending
-
1985
- 1985-09-18 DE DE19853533298 patent/DE3533298A1/en not_active Withdrawn
- 1985-09-20 GB GB8523284A patent/GB2166289A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE3533298A1 (en) | 1986-03-27 |
| GB2166289A (en) | 1986-04-30 |
| GB8523284D0 (en) | 1985-10-23 |
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