JPS62104163A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JPS62104163A JPS62104163A JP60244428A JP24442885A JPS62104163A JP S62104163 A JPS62104163 A JP S62104163A JP 60244428 A JP60244428 A JP 60244428A JP 24442885 A JP24442885 A JP 24442885A JP S62104163 A JPS62104163 A JP S62104163A
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- light shielding
- film
- substrate
- semiconductor film
- photoelectric conversion
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Abstract
Description
【発明の詳細な説明】
〔署既要〕
基板上の水銀カドミウムテルル（ＨｇＣｄＴｅ）半導体
膜の表面側に間隔を設けて配列された複数の光電変換素
子を有する裏面入射型赤外光電変換装置において、
基板と半導体膜との間の光電変換素子に対応する位置に
、環状をなして中央開口が透光窓となる金属の遮光膜と
、遮光膜を覆い半導体膜に接する二酸化シリコン膜とを
設けることにより、クロストークの少ない当該装置の提
供を可能にしたものである。[Detailed description of the invention] [Signed required] In a back-illuminated infrared photoelectric conversion device having a plurality of photoelectric conversion elements arranged at intervals on the front side of a mercury cadmium tellurium (HgCdTe) semiconductor film on a substrate. , A metal light-shielding film having an annular shape and a central opening serving as a light-transmitting window is provided at a position corresponding to the photoelectric conversion element between the substrate and the semiconductor film, and a silicon dioxide film that covers the light-shielding film and is in contact with the semiconductor film. This makes it possible to provide the device with less crosstalk.
本発明は、ＨｇＣｄＴｅ半導体を用いた複数の光電変換
素子を有する裏面入射型赤外光電変換装置の構成に関す
。The present invention relates to the configuration of a back-illuminated infrared photoelectric conversion device having a plurality of photoelectric conversion elements using HgCdTe semiconductors.
赤外光を検知する半導体素子にはＨｇＣｄＴｅ半導体が
賞月され、これを複数−個配列した光電変換装置は、赤
外撮像用として使用される。HgCdTe semiconductors are used as semiconductor elements for detecting infrared light, and a photoelectric conversion device in which a plurality of these semiconductors are arranged is used for infrared imaging.
この場合、素子は基板上に形成したＨｇＣｄＴｅ半導体
膜上に形成されるが、各素子から出力を引き出す関係上
、赤外光は基板側から入射させる（裏面入射型とする）
ことが多い。In this case, the elements are formed on the HgCdTe semiconductor film formed on the substrate, but in order to extract the output from each element, the infrared light is input from the substrate side (back-illuminated type).
There are many things.
そしてこの種の装置では、画像検知信号の品質を確保す
るため、各素子に入射する光が所定外の素子に入射して
生ずるクロストークの少ないことが求められる。In order to ensure the quality of the image detection signal, this type of device is required to have less crosstalk caused by light incident on each element being incident on an unspecified element.
第３図は従来の裏面入射型赤外光電変換装置例の部分破
断平面図（ａｌと側断面図中）である。FIG. 3 is a partially cutaway plan view (al and side sectional view) of an example of a conventional back-illuminated infrared photoelectric conversion device.
同図において、１は赤外透光性を有する厚さ約１鶴のカ
ドミウムテルル（ＣｄＴｅ）基板、２は基板１の裏面上
に設けられ約５５μｍ角の開口なる複数の透光窓３を約
５００ ｐ ｔａ間隔に有する金属例えばアルミニウム
（ＡＩ）などの遮光膜、４は基板１の表面上にエピタキ
シャル成長した厚さ約５０μ個のｐ型のＨｇＣｄＴｅ半
導体膜、５は半導体Ｉｌｌ！ ４表面の透光窓３に対応
する位置の約３０μｌφ領域に硼素（Ｂ）を注入して形
成したＨｇＣｄＴｅのｎ＋型領領域６はｎ＋型領領域５
上オーミック接触するインジウム（Ｉｎ）の電極、７は
）ＩｇＣｄＴｅ膜４の側面にオーミック接触する金（Ａ
ｕ）の電極、である。In the figure, reference numeral 1 denotes a cadmium tellurium (CdTe) substrate having an infrared transmitting property and having a thickness of about 1 square inch, and 2 a plurality of transparent windows 3, which are provided on the back surface of the substrate 1 and are approximately 55 μm square openings. 4 is a p-type HgCdTe semiconductor film epitaxially grown on the surface of the substrate 1 and has a thickness of about 50 μm; 5 is a semiconductor Ill! The n+ type region 6 of HgCdTe formed by implanting boron (B) into an approximately 30 μlφ region at a position corresponding to the transparent window 3 on the surface of 4 is the n+ type region 5.
Indium (In) electrode 7 is in ohmic contact with the upper electrode, and gold (A) electrode 7 is in ohmic contact with the side surface of the IgCdTe film 4.
u) electrode.
そして、電極７は、図示されない金線がボンディングさ
れて半導体膜４に電位を与え、電極６は、バンブとなっ
て図示されない電荷転送装置（ＣＯＤ）に接続されるか
または個々にボンディングされた図示されない金線によ
り図示されない信号処理装置に接続される。The electrode 7 is bonded with a gold wire (not shown) to apply a potential to the semiconductor film 4, and the electrode 6 is connected as a bump to a charge transfer device (COD) (not shown), or is individually bonded to a charge transfer device (COD) (not shown). It is connected to a signal processing device (not shown) by a gold wire (not shown).
この裏面入射型赤外光電変換装置は、ｎ＋型領領域５界
面がＨｇＣｄＴｅのＰ−Ｎ接合となるｎ＋梨型領域形成
部が赤外光を検知する光電変換素子８となり、遮光膜２
側から入射し透光窓４を通過した赤外光をそれぞれの素
子８で受光して赤外画像を検知する。In this back-illuminated infrared photoelectric conversion device, the n+ pear-shaped region forming portion in which the interface of the n+ type region 5 forms a P-N junction of HgCdTe becomes a photoelectric conversion element 8 that detects infrared light, and the light shielding film 2
Infrared light entering from the side and passing through the transparent window 4 is received by each element 8 to detect an infrared image.
しかしながら上記構成の裏面入射型赤外光電変換装置は
、厚い基板１の介在により透光窓３から光電変換素子８
までの距離が長くなり、このために透光窓３を通過した
光が所定外の素子８に入射するクロストークが多く、画
像検知信号の品質が十分でない欠点がある。However, in the back-illuminated infrared photoelectric conversion device having the above configuration, the photoelectric conversion element 8 is passed through the light-transmitting window 3 through the interposition of the thick substrate 1.
As a result, there is a large amount of crosstalk in which light passing through the light-transmitting window 3 enters an unspecified element 8, and the quality of the image detection signal is insufficient.
また製造において、透光窓３と素子８との位置合わせが
困難である問題もある。In addition, there is also the problem that alignment of the light-transmitting window 3 and the element 8 is difficult during manufacturing.
第１図は本発明実施例の部分破断平面図（ａ）と側断面
図中）である。FIG. 1 is a partially cutaway plan view (a) and a side cross-sectional view of an embodiment of the present invention.
上記問題点は、第１図に示される如く、赤外透光性基板
１上のＨｇＣｄＴｅ半導体膜４ａの表面側に間隔を設け
て配列された複数の光電変換素子８を有し、基板１と半
導体膜４ａとの間の光電変換素子８に対応する位置に、
環状をなして中央開口が透光窓３ａとなる金属の遮光Ｉ
！！２ａと、遮光膜２ａより若干大きく遮光膜２ａを覆
って半導体膜４ａから隔てる二酸化シリコン膜９とが設
けられてなる本発明の光電変換装置によって解決される
。The above problem, as shown in FIG. At a position corresponding to the photoelectric conversion element 8 between the semiconductor film 4a,
A metal light-shielding I having an annular shape and having a central opening as a light-transmitting window 3a.
! ! This problem is solved by the photoelectric conversion device of the present invention, which is provided with a silicon dioxide film 2a and a silicon dioxide film 9 that is slightly larger than the light shielding film 2a and covers the light shielding film 2a and separates it from the semiconductor film 4a.
上記構成は、基板１上にＨｇＣｄＴｅを液相エピタキシ
ャル成長させた際、基板１上に適宜の大きさの二酸化シ
リコン（ＳｉＯ２）膜が存在しても該５ｉ０２膜を覆っ
てｌＩｇｃｄＴｅ半導体膜が形成される、と言う経験的
知見を得たことにより成立したものである。In the above configuration, when HgCdTe is liquid-phase epitaxially grown on the substrate 1, even if a silicon dioxide (SiO2) film of an appropriate size exists on the substrate 1, a lIgcdTe semiconductor film is formed covering the 5i02 film. This was established based on the empirical knowledge that .
そして上記構成によれば、透光窓３ａから光電変換素子
８までの距離が従来例の相当する距離より大幅に短縮さ
れるので、問題のクロストークは従来例より減少する。According to the above configuration, the distance from the light-transmitting window 3a to the photoelectric conversion element 8 is significantly shorter than the corresponding distance in the conventional example, so that the problematic crosstalk is reduced compared to the conventional example.
また、遮光膜２ａを形成する際に一緒に位置合わせマー
クも形成すれば、透光窓３ａと素子８との位置合わせは
従来例より遥かに容易になる。Furthermore, if alignment marks are also formed when forming the light-shielding film 2a, alignment between the light-transmitting window 3a and the element 8 becomes much easier than in the conventional example.
以下、第１図およびその実施例に係る半導体膜の成長を
示す第２図の側断面図を用い、実施例について説明する
。Examples will be described below with reference to FIG. 1 and a side sectional view of FIG. 2 showing the growth of a semiconductor film according to the examples.
第１図において、１は従来例と同じＣｄＴｅ基板、２ａ
は、基板１の表面上に約５００μ−の間隔で蒸着により
設けられ、中央に約５０μｌ角の開口なる透光窓３ａを
有し外形が約１５０μｍ角で厚さが約５００人の金属例
えば亜鉛（Ｚｎ）などの遮光膜、２ｂは基板１の表面の
二つの角部上に遮光膜２ａと一緒に同一金属で設けられ
た例えば十形状の位置合わせマーク、９はスパッタによ
り遮光膜２ａおよびマーク２ｂを覆うように設けられた
直径が約２５０μｍφで厚さが約１０００人のＳｉＯ２
膜、４ａは遮光膜２ａｓマーク２ｂおよび５ｉ０２膜９
が設けられた基板１の表面上にエピタキシャル成長した
厚さ約５０μｌのｐ型のＨｇＣｄＴｅ半導体膜である。In FIG. 1, 1 is the same CdTe substrate as the conventional example, 2a
are provided by vapor deposition on the surface of the substrate 1 at intervals of about 500 μm, have a translucent window 3a with an opening of about 50 μl square in the center, have an outer shape of about 150 μm square, and have a thickness of about 500 mm, such as zinc. 2b is a ten-shaped alignment mark provided on two corners of the surface of the substrate 1 with the same metal as the light shielding film 2a, and 9 is a light shielding film 2a and marks formed by sputtering. SiO2 with a diameter of about 250 μmφ and a thickness of about 1000 mm was provided to cover 2b.
Film, 4a is light shielding film 2as mark 2b and 5i02 film 9
This is a p-type HgCdTe semiconductor film having a thickness of about 50 μl and epitaxially grown on the surface of the substrate 1 provided with.
半導体膜４ａのエピタキシャル成長は、液相成長によっ
て行う。さすれば第２図に示すように、この成長は、基
板１の表出面から開始され、成長表面が破線で示す如く
矢印の方向に進行してＳｉＯ２膜９の表面を逐次覆い、
最終的には５ｉ０２膜９を完全に覆って第１図図示の半
導体膜４ａを形成する。Epitaxial growth of the semiconductor film 4a is performed by liquid phase growth. As shown in FIG. 2, this growth starts from the exposed surface of the substrate 1, progresses in the direction of the arrow as shown by the broken line, and sequentially covers the surface of the SiO2 film 9.
Finally, the semiconductor film 4a shown in FIG. 1 is formed to completely cover the 5i02 film 9.
また、ｌＯは半導体膜４ａにおけるマーク２ｂ部をエツ
チングにより除去した切欠き、５は半導体膜４ａの表面
に従来例と同様に形成したＨｇＣｄＴｅのｎ＋型領領域
６と７は従来例と同様な電極である。In addition, 10 is a notch obtained by etching away the mark 2b portion of the semiconductor film 4a, and 5 is an n+ type region of HgCdTe formed on the surface of the semiconductor film 4a in the same manner as in the conventional example.N+ type regions 6 and 7 are electrodes similar to the conventional example. It is.
切欠き１０によりマーク２ｂが可視光で視認出来るので
、透光窓３ａとｎ＋型領領域５の位置合わせは従来例よ
り遥かに容易である。Since the mark 2b is visible through the notch 10 with visible light, alignment of the transparent window 3a and the n+ type region 5 is much easier than in the conventional example.
そして電極６と７は従来例と同様に接続される。Electrodes 6 and 7 are then connected in the same manner as in the conventional example.
この光電変換装置は、第３図に示す従来例と同様に、ｎ
＋梨型領域形成部が光電変換素子８となり、基板１側か
ら入射し透光窓３ａを通過した赤外光をそれぞれの素子
８で受光して赤外画像を検知する裏面入射型赤外光電変
換装置となる。This photoelectric conversion device is similar to the conventional example shown in FIG.
+ The pear-shaped area forming portion becomes a photoelectric conversion element 8, and each element 8 receives infrared light that enters from the substrate 1 side and passes through the transparent window 3a, and detects an infrared image. It becomes a conversion device.
上記光電変換装置は、透光窓３ａから光電変換素子８ま
での距離が凡そ５０μＩであり、第３図図示従来例で凡
そ１鶴であった相当する距離より大幅に短くなって、問
題となったクロストークが大幅に減少した。In the above photoelectric conversion device, the distance from the transparent window 3a to the photoelectric conversion element 8 is approximately 50 μI, which is significantly shorter than the corresponding distance of approximately 1 crane in the conventional example shown in FIG. crosstalk was significantly reduced.
なお上記実施例を示す第１図では、位置合わせマーク２
ｂを透光窓３ａの並ぶ位置に配置したが、その配置は、
半導体１１４ａの表面上ならば別の位置であっても良く
、また半導体膜４ａの側面に配置した電極は、半導体膜
４ａに接するならば別の位置であっても良い。Note that in FIG. 1 showing the above embodiment, the alignment mark 2
b was placed in the position where the transparent window 3a is lined up, but the arrangement is as follows.
The electrode may be placed at another position on the surface of the semiconductor 114a, and the electrode placed on the side surface of the semiconductor film 4a may be placed at another position as long as it is in contact with the semiconductor film 4a.
以上説明したように本発明の構成によれば、基板上のＨ
ｇＣｄＴｅ半導体膜の表面側に間隔を設けて配列された
複数の光電変換素子を有する裏面入射型赤外光電変換装
置において、クロストークを減少させることが出来て、
画像検知信号の品質向上を可能にさせる効果がある。As explained above, according to the configuration of the present invention, H on the substrate
In a back-illuminated infrared photoelectric conversion device having a plurality of photoelectric conversion elements arranged at intervals on the front side of a gCdTe semiconductor film, crosstalk can be reduced,
This has the effect of making it possible to improve the quality of image detection signals.
第１図は本発明実施例の部分破断平面図（ａ）と側断面
図（ｂ）、
第２図は実施例に係る半導体膜の成長を示す側断面図、
第３図は従来の裏面入射型赤外光電変換装置例の部分破
断平面図（ａ）と側断面図山）、である。
図において、
１は赤外透光性基板、
２．２ａは遮光膜、
２ｂは位置合わせマーク、
３．３ａは透光窓、
４．４ａはＩＩｇＣｄＴｅＨｇＣｄＴ
ｅ半導体膜領領域
６．７は電極、
８は光電変換素子、
９は二酸化シリコン（ＳｉＯ２）膜、
１０は切欠き、
である。
Ａ−４
オ調ざ１１１償う琶ナーｔｒ会ｌ身時平１石耶りと４・
１ヴ司１い（ト）第 １図
第 ２ 図Fig. 1 is a partially cutaway plan view (a) and side sectional view (b) of an embodiment of the present invention, Fig. 2 is a side sectional view showing the growth of a semiconductor film according to the embodiment, and Fig. 3 is a conventional back-illuminated structure. They are a partially cutaway plan view (a) and a side cross-sectional view of an example of a type infrared photoelectric conversion device. In the figure, 1 is an infrared transparent substrate, 2.2a is a light shielding film, 2b is an alignment mark, 3.3a is a transparent window, 4.4a is a IIgCdTeHgCdTe semiconductor film region 6.7 is an electrode, 8 9 is a photoelectric conversion element, 9 is a silicon dioxide (SiO2) film, and 10 is a notch. A-4 Ochoza 111 Atonement Ana tr meeting l body Tokihira 1 Sekiyari and 4.
Figure 1 Figure 2
Claims (1)
膜（４ａ）の表面側に間隔を設けて配列された複数の光
電変換素子（８）を有し、 該基板（１）と該半導体膜（４ａ）との間の該光電変換
素子（８）に対応する位置に、環状をなして中央開口が
透光窓（３ａ）となる金属の遮光膜（２ａ）と、該遮光
膜（２ａ）より若干大きく該遮光膜（２ａ）を覆って該
半導体膜（４ａ）から隔てる二酸化シリコン膜（９）と
が設けられてなることを特徴とする光電変換装置。[Claims] A plurality of photoelectric conversion elements (8) arranged at intervals on the surface side of a mercury-cadmium-tellurium semiconductor film (4a) on an infrared-transparent substrate (1), the substrate (1) and the semiconductor film (4a) at a position corresponding to the photoelectric conversion element (8), a metal light-shielding film (2a) having an annular shape and having a central opening serving as a light-transmitting window (3a) is provided. A photoelectric conversion device comprising: a silicon dioxide film (9) slightly larger than the light shielding film (2a), covering the light shielding film (2a) and separating it from the semiconductor film (4a).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60244428A JPS62104163A (en) | 1985-10-31 | 1985-10-31 | Photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60244428A JPS62104163A (en) | 1985-10-31 | 1985-10-31 | Photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62104163A true JPS62104163A (en) | 1987-05-14 |
Family
ID=17118509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60244428A Pending JPS62104163A (en) | 1985-10-31 | 1985-10-31 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62104163A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075748A (en) * | 1989-03-10 | 1991-12-24 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| US5115295A (en) * | 1989-10-31 | 1992-05-19 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| US5156980A (en) * | 1989-03-10 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making a rear surface incident type photodetector |
| JP2008096368A (en) * | 2006-10-16 | 2008-04-24 | Yokowo Co Ltd | Fixture for kelvin inspection |
| JP2008300614A (en) * | 2007-05-31 | 2008-12-11 | Fujifilm Corp | Imaging element, manufacturing method of imaging element, and semiconductor substrate for imaging element |
| US20160126276A1 (en) * | 2013-06-27 | 2016-05-05 | Sony Corporation | Solid-state imaging element, method of manufacturing the same, and imaging device |
-
1985
- 1985-10-31 JP JP60244428A patent/JPS62104163A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075748A (en) * | 1989-03-10 | 1991-12-24 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| US5156980A (en) * | 1989-03-10 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making a rear surface incident type photodetector |
| US5115295A (en) * | 1989-10-31 | 1992-05-19 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| JP2008096368A (en) * | 2006-10-16 | 2008-04-24 | Yokowo Co Ltd | Fixture for kelvin inspection |
| JP2008300614A (en) * | 2007-05-31 | 2008-12-11 | Fujifilm Corp | Imaging element, manufacturing method of imaging element, and semiconductor substrate for imaging element |
| US20160126276A1 (en) * | 2013-06-27 | 2016-05-05 | Sony Corporation | Solid-state imaging element, method of manufacturing the same, and imaging device |
| US9590003B2 (en) * | 2013-06-27 | 2017-03-07 | Sony Corporation | Solid-state imaging element, method of manufacturing the same, and imaging device |
| US10002902B2 (en) | 2013-06-27 | 2018-06-19 | Sony Semiconductor Solutions Corporation | Solid-state imaging element, method of manufacturing the same, and imaging device for reducing thickness of photoelectric conversion film |
| US10276624B2 (en) | 2013-06-27 | 2019-04-30 | Sony Semiconductor Solutions Corporation | Solid-state imaging element, method of manufacturing the same, and imaging device |
| US20190252452A1 (en) * | 2013-06-27 | 2019-08-15 | Sony Semiconductor Solutions Corporation | Solid-state imaging element, method of manufacturing the same, and imaging device |
| US10593721B2 (en) | 2013-06-27 | 2020-03-17 | Sony Semiconductor Solutions Corporation | Solid-state imaging element, method of manufacturing the same, and imaging device |
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