JPS5852817A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number: JPS5852817A
Authority: JP; Japan
Prior art keywords: layer; oxide film; polycrystalline silicon; silicon layer; base
Prior art date: 1981-09-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP56150741A

Other languages

English (en)

Japanese (ja)

Inventor

Kenji Kaneko

金子　憲二

Yutaka Okada

豊岡田

Takanori Nishimura

西村　孝典

Satoshi Kudo

聡工藤

Sadao Ogura

小倉　節生

Takahiro Okabe

岡部　隆博

Minoru Nagata

永田　「穣」

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-09-25

Filing date

1981-09-25

Publication date

1983-03-29

1981-09-25 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1981-09-25 Priority to JP56150741A priority Critical patent/JPS5852817A/ja

1982-09-24 Priority to KR8204306A priority patent/KR860000612B1/ko

1982-09-24 Priority to DE19823235467 priority patent/DE3235467A1/de

1982-09-24 Priority to GB08227355A priority patent/GB2106319B/en

1983-03-29 Publication of JPS5852817A publication Critical patent/JPS5852817A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 134
238000004519 manufacturing process Methods 0.000 title description 18
229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 82
238000000034 method Methods 0.000 claims abstract description 47
239000002184 metal Substances 0.000 claims abstract description 44
229910052751 metal Inorganic materials 0.000 claims abstract description 44
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
229910052710 silicon Inorganic materials 0.000 claims abstract description 21
239000010703 silicon Substances 0.000 claims abstract description 21
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
239000000758 substrate Substances 0.000 claims description 25
229910052581 Si3N4 Inorganic materials 0.000 claims description 6
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
230000001590 oxidative effect Effects 0.000 claims description 3
230000002093 peripheral effect Effects 0.000 claims 1
150000004767 nitrides Chemical class 0.000 abstract description 47
239000012535 impurity Substances 0.000 abstract description 9
230000003647 oxidation Effects 0.000 abstract description 8
238000007254 oxidation reaction Methods 0.000 abstract description 8
230000010354 integration Effects 0.000 abstract description 4
150000002500 ions Chemical class 0.000 abstract description 3
229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
238000009792 diffusion process Methods 0.000 description 22
238000005516 engineering process Methods 0.000 description 12
238000010586 diagram Methods 0.000 description 9
238000000605 extraction Methods 0.000 description 8
229920002120 photoresistant polymer Polymers 0.000 description 7
239000003990 capacitor Substances 0.000 description 6
230000007547 defect Effects 0.000 description 6
230000000694 effects Effects 0.000 description 6
230000003321 amplification Effects 0.000 description 4
238000007687 exposure technique Methods 0.000 description 4
238000003199 nucleic acid amplification method Methods 0.000 description 4
230000003071 parasitic effect Effects 0.000 description 4
238000000151 deposition Methods 0.000 description 3
238000013461 design Methods 0.000 description 3
238000005530 etching Methods 0.000 description 3
238000005468 ion implantation Methods 0.000 description 3
239000000463 material Substances 0.000 description 3
238000000059 patterning Methods 0.000 description 3
238000012545 processing Methods 0.000 description 3
230000007261 regionalization Effects 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 2
239000002131 composite material Substances 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
238000011160 research Methods 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
101100021573 Caenorhabditis elegans lon-8 gene Proteins 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
230000001427 coherent effect Effects 0.000 description 1
238000010276 construction Methods 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
230000018109 developmental process Effects 0.000 description 1
238000005553 drilling Methods 0.000 description 1
238000007667 floating Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
238000002955 isolation Methods 0.000 description 1
238000001459 lithography Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Bipolar Transistors (AREA)
Bipolar Integrated Circuits (AREA)
Electrodes Of Semiconductors (AREA)
Semiconductor Integrated Circuits (AREA)
Formation Of Insulating Films (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP56150741A 1981-09-25 1981-09-25 半導体装置及びその製造方法 Pending JPS5852817A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP56150741A JPS5852817A (ja)	1981-09-25	1981-09-25	半導体装置及びその製造方法
KR8204306A KR860000612B1 (en)	1981-09-25	1982-09-24	Semi conductor apparatus and manufacturing method
DE19823235467 DE3235467A1 (de)	1981-09-25	1982-09-24	Halbleiteranordnung und verfahren zu deren herstellung
GB08227355A GB2106319B (en)	1981-09-25	1982-09-24	Semiconductor device fabricated using self alignment technique

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP56150741A JPS5852817A (ja)	1981-09-25	1981-09-25	半導体装置及びその製造方法

Publications (1)

Publication Number	Publication Date
JPS5852817A true JPS5852817A (ja)	1983-03-29

Family

ID=15503396

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP56150741A Pending JPS5852817A (ja)	1981-09-25	1981-09-25	半導体装置及びその製造方法

Country Status (4)

Country	Link
JP (1)	JPS5852817A (de)
KR (1)	KR860000612B1 (de)
DE (1)	DE3235467A1 (de)
GB (1)	GB2106319B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6074477A (ja) *	1983-09-29	1985-04-26	Fujitsu Ltd	半導体装置及びその製造方法
JPS61180481A (ja) *	1984-10-31	1986-08-13	テキサス　インスツルメンツ　インコ−ポレイテツド	バイポーラトランジスタの製造方法
JP2001217317A (ja) *	2000-02-07	2001-08-10	Sony Corp	半導体装置およびその製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2172744B (en) *	1985-03-23	1989-07-19	Stc Plc	Semiconductor devices
GB2188478B (en) *	1986-03-26	1989-11-22	Stc Plc	Forming doped wells in sillicon subtstrates
JP4259247B2 (ja) *	2003-09-17	2009-04-30	東京エレクトロン株式会社	成膜方法
CN103021936B (zh) *	2012-12-28	2014-12-10	杭州士兰集成电路有限公司	一种双极电路的制造方法
CN110335896A (zh) *	2019-05-09	2019-10-15	中国电子科技集团公司第二十四研究所	一种可调电流增益的多晶硅发射极结构的制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3745647A (en) *	1970-10-07	1973-07-17	Rca Corp	Fabrication of semiconductor devices
GB1465078A (en) *	1973-07-30	1977-02-23	Hitachi Ltd	Semiconductor devices
JPS53132275A (en) *	1977-04-25	1978-11-17	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device and its production

1981
- 1981-09-25 JP JP56150741A patent/JPS5852817A/ja active Pending
1982
- 1982-09-24 DE DE19823235467 patent/DE3235467A1/de not_active Withdrawn
- 1982-09-24 GB GB08227355A patent/GB2106319B/en not_active Expired
- 1982-09-24 KR KR8204306A patent/KR860000612B1/ko active

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6074477A (ja) *	1983-09-29	1985-04-26	Fujitsu Ltd	半導体装置及びその製造方法
JPS61180481A (ja) *	1984-10-31	1986-08-13	テキサス　インスツルメンツ　インコ−ポレイテツド	バイポーラトランジスタの製造方法
JPH0523495B2 (de) *	1984-10-31	1993-04-02	Texas Instruments Inc
JP2001217317A (ja) *	2000-02-07	2001-08-10	Sony Corp	半導体装置およびその製造方法

Also Published As

Publication number	Publication date
GB2106319A (en)	1983-04-07
KR860000612B1 (en)	1986-05-22
KR840001773A (ko)	1984-05-16
DE3235467A1 (de)	1983-04-14
GB2106319B (en)	1985-07-31

Publication	Publication Date	Title
US5449637A (en)	1995-09-12	Method of producing low and high voltage MOSFETs with reduced masking steps
US4074304A (en)	1978-02-14	Semiconductor device having a miniature junction area and process for fabricating same
US4887145A (en)	1989-12-12	Semiconductor device in which electrodes are formed in a self-aligned manner
KR970004458B1 (ko)	1997-03-27	싱글 터브 반도체 장치 제조 방법
US4812417A (en)	1989-03-14	Method of making self aligned external and active base regions in I.C. processing
JPS5852817A (ja)	1983-03-29	半導体装置及びその製造方法
JPH0557741B2 (de)	1993-08-24
JP3113426B2 (ja)	2000-11-27	絶縁ゲート半導体装置及びその製造方法
US4631568A (en)	1986-12-23	Bipolar transistor construction
JPH06103745B2 (ja)	1994-12-14	集積回路素子
KR900007904B1 (ko)	1990-10-22	상보형 반도체장치의 제조방법
JP2852679B2 (ja)	1999-02-03	半導体装置及びその製造方法
JPH0330335A (ja)	1991-02-08	半導体装置の製造方法
JPH05343413A (ja)	1993-12-24	バイポーラトランジスタとその製造方法
JPH0618200B2 (ja)	1994-03-09	ラテラルトランジスタ半導体装置の製造方法
JPH0227737A (ja)	1990-01-30	半導体装置の製造方法
KR0127266B1 (ko)	1997-12-29	고전압용 반도체 소자의 제조방법
JPS6037774A (ja)	1985-02-27	半導体装置の製造方法
JP2993041B2 (ja)	1999-12-20	相補型ｍｏｓ半導体装置
JPS5984464A (ja)	1984-05-16	半導体集積回路装置の製造方法
JP2764988B2 (ja)	1998-06-11	半導体装置
JPH0475663B2 (de)	1992-12-01
JPH056965A (ja)	1993-01-14	半導体集積回路及びその製造方法
JPH0475346A (ja)	1992-03-10	半導体装置の製造方法
JPH0143468B2 (de)	1989-09-20