JPS58174856U - electronic microscope - Google Patents

electronic microscope

Info

Publication number
JPS58174856U
JPS58174856U JP7199282U JP7199282U JPS58174856U JP S58174856 U JPS58174856 U JP S58174856U JP 7199282 U JP7199282 U JP 7199282U JP 7199282 U JP7199282 U JP 7199282U JP S58174856 U JPS58174856 U JP S58174856U
Authority
JP
Japan
Prior art keywords
electron beam
detector
center
electron
electronic microscope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7199282U
Other languages
Japanese (ja)
Inventor
正弘 富田
上村　昌司
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP7199282U priority Critical patent/JPS58174856U/en
Publication of JPS58174856U publication Critical patent/JPS58174856U/en
Pending legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図、第２図は本考案の断面図を示す。 １・・・上極、２・・・下極、３・・・セパレート、４
・・・試料、５・・・電子線、６・・・検出器、７・・
・電子線、８・・・検出器。1 and 2 show cross-sectional views of the present invention. 1... Upper pole, 2... Lower pole, 3... Separate, 4
...Sample, 5...Electron beam, 6...Detector, 7...
・Electron beam, 8...detector.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 反射電子検出器は電子線通過穴を中心部に有し、その穴
は試料とＸ線分析装置の検出器間は遮蔽す−る大きさに
し、Ｘ線分析時は電子線から外へ引出し、他は常に電子
線中心部に挿入するようシーケンス制御することを特徴
とする電子顕微鏡。The backscattered electron detector has an electron beam passage hole in the center, and the hole is large enough to shield the area between the sample and the detector of the X-ray analyzer, and is drawn out from the electron beam during X-ray analysis. Another type of electron microscope is characterized by sequence control so that the electron beam is always inserted into the center.
JP7199282U 1982-05-19 1982-05-19 electronic microscope Pending JPS58174856U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7199282U JPS58174856U (en) 1982-05-19 1982-05-19 electronic microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7199282U JPS58174856U (en) 1982-05-19 1982-05-19 electronic microscope

Publications (1)

Publication Number Publication Date
JPS58174856U true JPS58174856U (en) 1983-11-22

Family

ID=30081579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7199282U Pending JPS58174856U (en) 1982-05-19 1982-05-19 electronic microscope

Country Status (1)

Country Link
JP (1) JPS58174856U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03182039A (en) * 1989-12-04 1991-08-08 Internatl Business Mach Corp <Ibm> Magnetic filter system low loss scanning type electron microscope
JP2009236622A (en) * 2008-03-26 2009-10-15 Tohken Co Ltd High-resolution x-ray microscopic apparatus with fluorescent x-ray analysis function
WO2013077217A1 (en) * 2011-11-25 2013-05-30 株式会社日立ハイテクノロジーズ Charged-particle radiation apparatus
US9153417B2 (en) 2011-11-25 2015-10-06 Totoltd. Back scattered electron detector

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03182039A (en) * 1989-12-04 1991-08-08 Internatl Business Mach Corp <Ibm> Magnetic filter system low loss scanning type electron microscope
JP2009236622A (en) * 2008-03-26 2009-10-15 Tohken Co Ltd High-resolution x-ray microscopic apparatus with fluorescent x-ray analysis function
WO2013077217A1 (en) * 2011-11-25 2013-05-30 株式会社日立ハイテクノロジーズ Charged-particle radiation apparatus
JP2013114763A (en) * 2011-11-25 2013-06-10 Hitachi High-Technologies Corp Charged-particle radiation apparatus
US9053902B2 (en) 2011-11-25 2015-06-09 Hitachi High-Technologies Corporation Charged-particle radiation apparatus
US9153417B2 (en) 2011-11-25 2015-10-06 Totoltd. Back scattered electron detector

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