JPS62262418A - Plasma cvd equipment - Google Patents
Plasma cvd equipmentInfo
- Publication number
- JPS62262418A JPS62262418A JP10616886A JP10616886A JPS62262418A JP S62262418 A JPS62262418 A JP S62262418A JP 10616886 A JP10616886 A JP 10616886A JP 10616886 A JP10616886 A JP 10616886A JP S62262418 A JPS62262418 A JP S62262418A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- electrode
- vibration
- plasma cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 230000003993 interaction Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
本発明は、反応の活性化に必要なエネルギーをグロー放
電のプラズマによって得て半導体薄膜などを形成するプ
ラズマＣＶＤ装置に関する。The present invention relates to a plasma CVD apparatus that forms semiconductor thin films and the like by obtaining the energy necessary for activating a reaction using glow discharge plasma.
アモルファスシリコン薄膜は、第２図に示すような平行
平板型グロー放電装置を用い、反応槽１内゛を排気口２
より真空排気しながら導入口３から５１ｇ４を主成分と
する原料ガスを導入し、対向平板電極４１．４２間に高
周波電源５により電圧を印加してグロー放電を発生させ
、上部電極４１に支持した基板６の上に反応生成物を堆
積させて形成するが、この過程はプラズマ過程であるた
め基板温度を１５０〜３００℃と低くでき、またどんな
形状、材質の基板にも成膜可能であるため大面積化も容
易であるため、低価格太陽電池や感光体の素材として近
年注目を集めている。この場合、反応槽１内の圧力や基
ｉＧの温度、放電パワー、ガス流量によりアモルファス
シリコン膜のもつ特性を変化させることができる。しか
し、膜質を向上させるため基板温度を上げたり、膜堆積
速度を大きくするため放電パワーを上げたりすると膜が
剥離しやすい現象がみられた。半導体変換素子への適用
という面からは、ある程度基板温度が高く （約２５０
℃）、堆積速度の大きい方が望ましいが、膜の付着力が
余りないと、素子製作上の洗浄やバターニング工程にお
いて不良品が生じやすいという欠点があった。The amorphous silicon thin film was prepared by using a parallel plate type glow discharge device as shown in Fig.
A raw material gas containing 51g4 as a main component was introduced from the inlet 3 while further evacuating, and a voltage was applied between the opposing flat plate electrodes 41 and 42 by the high frequency power source 5 to generate a glow discharge, which was supported on the upper electrode 41. It is formed by depositing a reaction product on the substrate 6, but since this process is a plasma process, the substrate temperature can be as low as 150 to 300°C, and the film can be formed on any shape and material of the substrate. Because it can be easily made into large-area materials, it has attracted attention in recent years as a material for low-cost solar cells and photoreceptors. In this case, the characteristics of the amorphous silicon film can be changed depending on the pressure inside the reaction tank 1, the temperature of the base iG, the discharge power, and the gas flow rate. However, when the substrate temperature was raised to improve the film quality or the discharge power was increased to increase the film deposition rate, the film tended to peel off easily. From the perspective of application to semiconductor conversion elements, the substrate temperature is relatively high (approximately 250
C), and a higher deposition rate is desirable, but if the film does not have sufficient adhesion, it has the disadvantage that defective products are likely to occur during the cleaning and patterning steps during device fabrication.
本発明は、上記問題点に鑑み、基板上に付着力の強い膜
を生成できるプラズマＣｖ Ｄ装置を提供することを目
的とする。SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to provide a plasma CvD apparatus capable of forming a film with strong adhesion on a substrate.
本発明は、反応槽内にグロー放電発生のための放電電極
と基板支持体とを備えるプラズマＣＶＤ装置の基板支持
体に超音波発生器を結合させるもので、これにより基板
表面が振動してプラズマ中に生じた活性種との相互作用
の機会が増加することにより堆積膜付着力の向上が得ら
れ、上記の目的が達成される。In the present invention, an ultrasonic generator is coupled to a substrate support of a plasma CVD apparatus which is equipped with a discharge electrode for generating glow discharge and a substrate support in a reaction tank, and this causes the substrate surface to vibrate and generate plasma. By increasing the chances of interaction with the active species generated therein, the adhesion of the deposited film is improved and the above objective is achieved.
第１図は、本発明の一実施例を示し、第２図と共通の部
分には同一の符号が付されている。この装置では、磁歪
振動子７１．振動ホーン７２からなる超音波発生器７の
振動ホーン７２が上部電極４１の中央に形成された開口
部に露出しており、電ｉ４１の下面に支持具８を用いて
支持される基板６に直接接触するようになっている。
この装置を用い、５ｉＨａをガス導入口３より反応槽１
に導入し、排気口２より真空排気して槽内圧力をｌ〜１
ＯＴｏｒｒに保ち、図示していないランプにより基板６
を１００〜３００℃に加熱し、超音波発生器７の振動子
７１で発生した５〜２０ｋＨｚの超音波振動をホーン７
２を介して基板６に与えながら、電極４１、４２間の放
電パワーを１〜５０Ｗとしてアモルファスシリコン膜の
生成を行った。生成された膜の付着力を試験したところ
、いずれの条件でも超音波振動を与えない従来装置の場
合に比してアモルファスシリコン膜の付着強度が３０〜
５０％向上し、従来装置では膜剥離の起こりやすかった
高パワー。
高基板温度の場合でも膜の付着力は良好であり、Ｙ２ａ
良好で後工程に十分堪えられる膜が形成されたことがわ
かった。
超音波振動を直接基板に与えないで、振動ホーン７２を
電８ｉ４１に接触させても効果があり、また電極４１の
上方からでなく側方から振動を与えても有効である。上
記の実施例のように放電電極が基板支持体を兼ねるので
はなく、電極と別に基板支持体を設ける場合には、その
基板支持体に超音波発生器を取り付ければ同じ効果が得
られる。FIG. 1 shows an embodiment of the present invention, and parts common to those in FIG. 2 are given the same reference numerals. In this device, the magnetostrictive vibrator 71. The vibration horn 72 of the ultrasonic generator 7 consisting of a vibration horn 72 is exposed through an opening formed in the center of the upper electrode 41, and is directly connected to the substrate 6 supported by the support 8 on the lower surface of the electrode 41. It is meant to be in contact. Using this device, 5iHa is introduced into the reaction tank 1 from the gas inlet 3.
is introduced into the tank, and the tank is evacuated from the exhaust port 2 to reduce the pressure inside the tank to 1 to 1.
The board 6 is maintained at OTorr using a lamp (not shown).
is heated to 100 to 300°C, and the ultrasonic vibrations of 5 to 20 kHz generated by the vibrator 71 of the ultrasonic generator 7 are transmitted to the horn 7.
The amorphous silicon film was generated by applying the discharge power between the electrodes 41 and 42 to 1 to 50 W while applying the discharge power to the substrate 6 through the electrode 2 . When the adhesion strength of the produced film was tested, the adhesion strength of the amorphous silicon film was 30 to 30% higher than that of a conventional device that does not apply ultrasonic vibration under any conditions.
50% higher power, which was more likely to cause film peeling with conventional equipment. The adhesion of the film is good even at high substrate temperatures, and Y2a
It was found that a film was formed that was good and could sufficiently withstand post-processing. It is also effective to bring the vibration horn 72 into contact with the electrode 8i41 without applying ultrasonic vibration directly to the substrate, and it is also effective to apply vibration from the side of the electrode 41 instead of from above. If the discharge electrode does not also serve as the substrate support as in the above embodiment, but a substrate support is provided separately from the electrode, the same effect can be obtained by attaching an ultrasonic generator to the substrate support.
本発明によれば、グロー放電により原料ガスをプラズマ
分解して基板上に膜を形成する装置において、超音波発
生器を基板支持体に結合し、基板に超音波振動を与える
ことにより、原料ガスの分解によって生じた活性種と基
板との相互作用が活発となって基板上に堆積する膜の付
着力を高めることができ、膜質の良好な膜の後の製造工
程中での凸版からの剥諦による不良品の発生を減少させ
るという効果が得られる。この付着力向上の効果は、ア
モルファスシリコン膜に限らず、プラズマＣＶＤ法によ
り形成されろ窒化シリコン膜、酸化シリコン膜、りんガ
ラス （ＰＳＧ）膜などに対しても得ることができる。According to the present invention, in an apparatus for plasma-decomposing raw material gas using glow discharge to form a film on a substrate, an ultrasonic generator is coupled to a substrate support, and by applying ultrasonic vibration to the substrate, the raw material gas is The active species generated by the decomposition of This has the effect of reducing the occurrence of defective products due to failure. This effect of improving adhesion can be obtained not only for amorphous silicon films but also for silicon nitride films, silicon oxide films, phosphorous glass (PSG) films, etc. formed by plasma CVD.
第１図は本発明の一実施例の断面図、第２図は従来装置
の断面図である。
ｌ：反応槽、３：原料ガス導入口、４１．４２＝電極５
．６；基板、７：超音波発生器、７１；磁歪振動子、７
２：振動ホーン。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional device. l: reaction tank, 3: raw material gas inlet, 41.42 = electrode 5
．． 6; Substrate, 7: Ultrasonic generator, 71; Magnetostrictive vibrator, 7
2: Vibration horn.
Claims (1)
支持体とを備えるものにおいて、基板支持体に超音波発
生器が結合されたことを特徴とするプラズマＣＶＤ装置
。 ２）特許請求の範囲第１項記載の装置において、超音波
発生器が一方の放電電極を兼ねる基板支持体の他方の放
電電極と反対側に結合されたことを特徴とするプラズマ
ＣＶＤ装置。[Claims] 1) A plasma CVD apparatus comprising a discharge electrode for generating glow discharge and a substrate support in a reaction tank, characterized in that an ultrasonic generator is coupled to the substrate support. . 2) A plasma CVD apparatus according to claim 1, characterized in that an ultrasonic generator is coupled to a side of the substrate support that also serves as one discharge electrode, opposite to the other discharge electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10616886A JPS62262418A (en) | 1986-05-09 | 1986-05-09 | Plasma cvd equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10616886A JPS62262418A (en) | 1986-05-09 | 1986-05-09 | Plasma cvd equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62262418A true JPS62262418A (en) | 1987-11-14 |
Family
ID=14426740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10616886A Pending JPS62262418A (en) | 1986-05-09 | 1986-05-09 | Plasma cvd equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62262418A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5932302A (en) * | 1993-07-20 | 1999-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating with ultrasonic vibration a carbon coating |
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
-
1986
- 1986-05-09 JP JP10616886A patent/JPS62262418A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US5932302A (en) * | 1993-07-20 | 1999-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating with ultrasonic vibration a carbon coating |
| US6468617B1 (en) | 1993-07-20 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
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