JPS5785220A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number
JPS5785220A
JPS5785220A JP16220080A JP16220080A JPS5785220A JP S5785220 A JPS5785220 A JP S5785220A JP 16220080 A JP16220080 A JP 16220080A JP 16220080 A JP16220080 A JP 16220080A JP S5785220 A JPS5785220 A JP S5785220A
Authority
JP
Japan
Prior art keywords
wall
container
film
heater
vacuum container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16220080A
Other languages
Japanese (ja)
Other versions
JPS5948535B2 (en
Inventor
Kanetake Takasaki
Kenji Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55162200A priority Critical patent/JPS5948535B2/en
Publication of JPS5785220A publication Critical patent/JPS5785220A/en
Publication of JPS5948535B2 publication Critical patent/JPS5948535B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)

Abstract

PURPOSE:To prevent a film from forming uselessly, harmfully and wastefully on the wall of a vaccum container, by providing a heater which heats the wall of the vacuum container. CONSTITUTION:In a vaccum container 1, reaction gas is induced from an inlet 2 by selecting in accordance with a type of thin layers to be formed, and exhaust gas after reaction is exhausted to an outlet 3. In it parallel plate electrodes 4, 5 and provided, and a heater 8 is provided on one of these electrodes. A thin film is formed here by crashing plasma to a substrate 7. A useless, harmful film is prevented from forming on the wall of the vacuum container 1, by providing a heater 10, which heats the wall 9 of the vacuum container 1, on the container exterior. A film formed unavoidably on the wall 9 is sticked densely and tightly, and prevented from removing and scattering.
JP55162200A 1980-11-18 1980-11-18 Plasma CVD equipment Expired JPS5948535B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55162200A JPS5948535B2 (en) 1980-11-18 1980-11-18 Plasma CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55162200A JPS5948535B2 (en) 1980-11-18 1980-11-18 Plasma CVD equipment

Publications (2)

Publication Number Publication Date
JPS5785220A true JPS5785220A (en) 1982-05-27
JPS5948535B2 JPS5948535B2 (en) 1984-11-27

Family

ID=15749878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55162200A Expired JPS5948535B2 (en) 1980-11-18 1980-11-18 Plasma CVD equipment

Country Status (1)

Country Link
JP (1) JPS5948535B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101421A (en) * 1981-12-11 1983-06-16 Canon Inc Manufacturing device of deposited film
JPS59100514A (en) * 1982-11-30 1984-06-09 Fujitsu Ltd Plasma cvd device
JPS60261143A (en) * 1984-06-07 1985-12-24 Fujitsu Ltd Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6219633U (en) * 1985-07-22 1987-02-05

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
JPS53101276A (en) * 1977-02-16 1978-09-04 Hitachi Ltd Decompression cvd device
JPS53143170A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Condenser type gas plasma treating apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
JPS53101276A (en) * 1977-02-16 1978-09-04 Hitachi Ltd Decompression cvd device
JPS53143170A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Condenser type gas plasma treating apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101421A (en) * 1981-12-11 1983-06-16 Canon Inc Manufacturing device of deposited film
JPS59100514A (en) * 1982-11-30 1984-06-09 Fujitsu Ltd Plasma cvd device
JPS60261143A (en) * 1984-06-07 1985-12-24 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5948535B2 (en) 1984-11-27

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