JPS53143170A - Condenser type gas plasma treating apparatus - Google Patents

Condenser type gas plasma treating apparatus

Info

Publication number
JPS53143170A
JPS53143170A JP5770177A JP5770177A JPS53143170A JP S53143170 A JPS53143170 A JP S53143170A JP 5770177 A JP5770177 A JP 5770177A JP 5770177 A JP5770177 A JP 5770177A JP S53143170 A JPS53143170 A JP S53143170A
Authority
JP
Japan
Prior art keywords
treating apparatus
type gas
gas plasma
condenser type
plasma treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5770177A
Other languages
Japanese (ja)
Other versions
JPS5933250B2 (en
Inventor
Masakuni Akiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5770177A priority Critical patent/JPS5933250B2/en
Publication of JPS53143170A publication Critical patent/JPS53143170A/en
Publication of JPS5933250B2 publication Critical patent/JPS5933250B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable the electric field acting upon the objects to be treated to be made even by respectively supplying power to the electrode plates electrically separated to a plurality and rotating a hot plate.
JP5770177A 1977-05-20 1977-05-20 Condenser type gas plasma processing equipment Expired JPS5933250B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5770177A JPS5933250B2 (en) 1977-05-20 1977-05-20 Condenser type gas plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5770177A JPS5933250B2 (en) 1977-05-20 1977-05-20 Condenser type gas plasma processing equipment

Publications (2)

Publication Number Publication Date
JPS53143170A true JPS53143170A (en) 1978-12-13
JPS5933250B2 JPS5933250B2 (en) 1984-08-14

Family

ID=13063230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5770177A Expired JPS5933250B2 (en) 1977-05-20 1977-05-20 Condenser type gas plasma processing equipment

Country Status (1)

Country Link
JP (1) JPS5933250B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785220A (en) * 1980-11-18 1982-05-27 Fujitsu Ltd Plasma cvd device
JPS5810830A (en) * 1981-07-10 1983-01-21 Seiko Epson Corp Dry etching device
JPS58104016A (en) * 1981-12-16 1983-06-21 Toshiba Corp Film forming method
JPS62130277A (en) * 1985-08-09 1987-06-12 Toa Nenryo Kogyo Kk Method and apparatus for producing amorphous silicon thin film
JPS63274126A (en) * 1987-05-06 1988-11-11 Mitsui Toatsu Chem Inc High frequency wave application electrode constituent body

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785220A (en) * 1980-11-18 1982-05-27 Fujitsu Ltd Plasma cvd device
JPS5948535B2 (en) * 1980-11-18 1984-11-27 富士通株式会社 Plasma CVD equipment
JPS5810830A (en) * 1981-07-10 1983-01-21 Seiko Epson Corp Dry etching device
JPS58104016A (en) * 1981-12-16 1983-06-21 Toshiba Corp Film forming method
JPH0250195B2 (en) * 1981-12-16 1990-11-01 Tokyo Shibaura Electric Co
JPS62130277A (en) * 1985-08-09 1987-06-12 Toa Nenryo Kogyo Kk Method and apparatus for producing amorphous silicon thin film
JPS63274126A (en) * 1987-05-06 1988-11-11 Mitsui Toatsu Chem Inc High frequency wave application electrode constituent body

Also Published As

Publication number Publication date
JPS5933250B2 (en) 1984-08-14

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