JPS5539690A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS5539690A
JPS5539690A JP11395178A JP11395178A JPS5539690A JP S5539690 A JPS5539690 A JP S5539690A JP 11395178 A JP11395178 A JP 11395178A JP 11395178 A JP11395178 A JP 11395178A JP S5539690 A JPS5539690 A JP S5539690A
Authority
JP
Japan
Prior art keywords
etching
plasma generating
generating part
plate
separating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11395178A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Kazuo Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11395178A priority Critical patent/JPS5539690A/en
Publication of JPS5539690A publication Critical patent/JPS5539690A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide an uniform etching speed by dividing by a separating plate having a hole between the plasma generating part and the etching part and then by treating a material treated by etching gas blown from the hole.
CONSTITUTION: In a cuartz glass made cylindrical vaccum vessel 51 having an external electrode 52 in its upper surface, a separating plate 53 having an opening to divide the plasma generating part and etching part is installed. In the separating plate 53, and activating particle introducing tube 54 having a cylindrical tube with its diameter of D is installed and in the side of plasma generating part of the plate 53 a plasma shieding plate 55 having many small holes is installed. Further, in the plasma generating part, a etching gas introduction pipe 56 is placed and in the below part of the introducing tube 54, a etching material 58 is mounted on a mounting bace 5 and in its below part an exhaust outlet 59 is installed. By doing so, carbon tetrafluoride is charged to the plasma generating part and gas produced is blown to a material 54 through the introducing tube 54 to effect an etching treatment.
COPYRIGHT: (C)1980,JPO&Japio
JP11395178A 1978-09-14 1978-09-14 Plasma etching device Pending JPS5539690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11395178A JPS5539690A (en) 1978-09-14 1978-09-14 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11395178A JPS5539690A (en) 1978-09-14 1978-09-14 Plasma etching device

Publications (1)

Publication Number Publication Date
JPS5539690A true JPS5539690A (en) 1980-03-19

Family

ID=14625286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11395178A Pending JPS5539690A (en) 1978-09-14 1978-09-14 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS5539690A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340461A (en) * 1980-09-10 1982-07-20 International Business Machines Corp. Modified RIE chamber for uniform silicon etching
JPS6042832A (en) * 1983-08-18 1985-03-07 Matsushita Electric Ind Co Ltd Ion beam device
JPH04336418A (en) * 1991-05-13 1992-11-24 Sumitomo Metal Ind Ltd Ashing device
JPH0511435U (en) * 1991-07-24 1993-02-12 住友金属工業株式会社 Asssing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122236A (en) * 1976-04-07 1977-10-14 Tokyo Shibaura Electric Co Etching device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122236A (en) * 1976-04-07 1977-10-14 Tokyo Shibaura Electric Co Etching device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340461A (en) * 1980-09-10 1982-07-20 International Business Machines Corp. Modified RIE chamber for uniform silicon etching
JPS6042832A (en) * 1983-08-18 1985-03-07 Matsushita Electric Ind Co Ltd Ion beam device
JPH0347573B2 (en) * 1983-08-18 1991-07-19 Matsushita Electric Ind Co Ltd
JPH04336418A (en) * 1991-05-13 1992-11-24 Sumitomo Metal Ind Ltd Ashing device
JPH0511435U (en) * 1991-07-24 1993-02-12 住友金属工業株式会社 Asssing device

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