JPS5780778A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5780778A JPS5780778A JP15579980A JP15579980A JPS5780778A JP S5780778 A JPS5780778 A JP S5780778A JP 15579980 A JP15579980 A JP 15579980A JP 15579980 A JP15579980 A JP 15579980A JP S5780778 A JPS5780778 A JP S5780778A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- diffused
- oxidative atmosphere
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- 230000001590 oxidative effect Effects 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To stably form an Si oxidized film in the prescribed thickness by heat treating an Si substrate in an oxidative atmosphere and forming an Si oxide between the Si substrate surface and a thick insulating film. CONSTITUTION:An insulating film 4 having many traps in a bulk like Al2O3 is formed on a single crystal Si substrate 1 by a gas phase growing method or the like. When the substrate 1 formed with the film 4 on the surface is heat treated in oxidative atmosphere at 600-1,000 deg.C for several minutes to several tens minutes, O2 is diffused in the film 4 to reach the surface of the substrate 1, and an Si oxidized film is formed between the film 4 and the substrate 1. Thereafter, a dopant of the type different from the substrate 1 is diffused as source and drain to form diffused layer 2. A wire electrode 5 made of aluminum is formed to complete the fundamental structure of a transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15579980A JPS5780778A (en) | 1980-11-07 | 1980-11-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15579980A JPS5780778A (en) | 1980-11-07 | 1980-11-07 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5780778A true JPS5780778A (en) | 1982-05-20 |
Family
ID=15613689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15579980A Pending JPS5780778A (en) | 1980-11-07 | 1980-11-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5780778A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007043491A1 (en) * | 2005-10-03 | 2007-04-19 | Nec Corporation | Semiconductor storage device and method for manufacturing same |
-
1980
- 1980-11-07 JP JP15579980A patent/JPS5780778A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007043491A1 (en) * | 2005-10-03 | 2007-04-19 | Nec Corporation | Semiconductor storage device and method for manufacturing same |
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