JPS55140142A - Field-effect semiconductor sensor and its manufacture - Google Patents
Field-effect semiconductor sensor and its manufactureInfo
- Publication number
- JPS55140142A JPS55140142A JP3285279A JP3285279A JPS55140142A JP S55140142 A JPS55140142 A JP S55140142A JP 3285279 A JP3285279 A JP 3285279A JP 3285279 A JP3285279 A JP 3285279A JP S55140142 A JPS55140142 A JP S55140142A
- Authority
- JP
- Japan
- Prior art keywords
- film
- coated
- subjected
- metal compound
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
PURPOSE: To obtain the titled sensor having a desired ion sensitive film by a method wherein an alcohol solution of an organic metal compound is coated on a FET gate insulation film which is coated with a surface stabilizing film, and is subjected to hydrolysis and then heated.
CONSTITUTION: Source diffusion region 32 and drain diffusion region 33 are formed on p-type silicon substrate 31, and also, gate oxide film (SiO2 film) 34 is formed. Further, on top of this is formed surface stabilizing film 36 consisting of Si3N4, and thereby the gate region part of the FET is formed. Next, an alcohol solution of an organic metal compound [Si(OC2H5)4, Ca(OCH3)2, NaOCH3, etc.] is coated so as to cover the above-mentioned gate region part. This is dried, and a coating film of thickness about 500W10000Å is produced. This coating film is subjected to hydrolysis thoroughly in the presence of moisture. After this, the film is heat treated in an inert gas (N2, for example) atmosphere at about 500W800°C for 2W3hr, and sensitive film 41 is formed, which becomes a sensor.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3285279A JPS55140142A (en) | 1979-03-20 | 1979-03-20 | Field-effect semiconductor sensor and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3285279A JPS55140142A (en) | 1979-03-20 | 1979-03-20 | Field-effect semiconductor sensor and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55140142A true JPS55140142A (en) | 1980-11-01 |
Family
ID=12370358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3285279A Pending JPS55140142A (en) | 1979-03-20 | 1979-03-20 | Field-effect semiconductor sensor and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55140142A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5924245A (en) * | 1982-07-31 | 1984-02-07 | Shimadzu Corp | Preparation of ion sensor |
JPS60115841A (en) * | 1983-11-28 | 1985-06-22 | Shimadzu Corp | Ion sensor |
JPS6283641A (en) * | 1985-10-08 | 1987-04-17 | Sharp Corp | Sensor element |
US4903099A (en) * | 1987-02-09 | 1990-02-20 | Nihon Kohden Corp | Field effect transistor for use as ion sensor |
-
1979
- 1979-03-20 JP JP3285279A patent/JPS55140142A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5924245A (en) * | 1982-07-31 | 1984-02-07 | Shimadzu Corp | Preparation of ion sensor |
JPS60115841A (en) * | 1983-11-28 | 1985-06-22 | Shimadzu Corp | Ion sensor |
JPH0469337B2 (en) * | 1983-11-28 | 1992-11-05 | Shimadzu Corp | |
JPS6283641A (en) * | 1985-10-08 | 1987-04-17 | Sharp Corp | Sensor element |
JPH0460549B2 (en) * | 1985-10-08 | 1992-09-28 | Sharp Kk | |
US4903099A (en) * | 1987-02-09 | 1990-02-20 | Nihon Kohden Corp | Field effect transistor for use as ion sensor |
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