JPS55140142A - Field-effect semiconductor sensor and its manufacture - Google Patents

Field-effect semiconductor sensor and its manufacture

Info

Publication number
JPS55140142A
JPS55140142A JP3285279A JP3285279A JPS55140142A JP S55140142 A JPS55140142 A JP S55140142A JP 3285279 A JP3285279 A JP 3285279A JP 3285279 A JP3285279 A JP 3285279A JP S55140142 A JPS55140142 A JP S55140142A
Authority
JP
Japan
Prior art keywords
film
coated
subjected
metal compound
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3285279A
Other languages
Japanese (ja)
Inventor
Kazumuki Yanagisawa
Takashi Mizusaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP3285279A priority Critical patent/JPS55140142A/en
Publication of JPS55140142A publication Critical patent/JPS55140142A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To obtain the titled sensor having a desired ion sensitive film by a method wherein an alcohol solution of an organic metal compound is coated on a FET gate insulation film which is coated with a surface stabilizing film, and is subjected to hydrolysis and then heated.
CONSTITUTION: Source diffusion region 32 and drain diffusion region 33 are formed on p-type silicon substrate 31, and also, gate oxide film (SiO2 film) 34 is formed. Further, on top of this is formed surface stabilizing film 36 consisting of Si3N4, and thereby the gate region part of the FET is formed. Next, an alcohol solution of an organic metal compound [Si(OC2H5)4, Ca(OCH3)2, NaOCH3, etc.] is coated so as to cover the above-mentioned gate region part. This is dried, and a coating film of thickness about 500W10000Å is produced. This coating film is subjected to hydrolysis thoroughly in the presence of moisture. After this, the film is heat treated in an inert gas (N2, for example) atmosphere at about 500W800°C for 2W3hr, and sensitive film 41 is formed, which becomes a sensor.
COPYRIGHT: (C)1980,JPO&Japio
JP3285279A 1979-03-20 1979-03-20 Field-effect semiconductor sensor and its manufacture Pending JPS55140142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3285279A JPS55140142A (en) 1979-03-20 1979-03-20 Field-effect semiconductor sensor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3285279A JPS55140142A (en) 1979-03-20 1979-03-20 Field-effect semiconductor sensor and its manufacture

Publications (1)

Publication Number Publication Date
JPS55140142A true JPS55140142A (en) 1980-11-01

Family

ID=12370358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3285279A Pending JPS55140142A (en) 1979-03-20 1979-03-20 Field-effect semiconductor sensor and its manufacture

Country Status (1)

Country Link
JP (1) JPS55140142A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924245A (en) * 1982-07-31 1984-02-07 Shimadzu Corp Preparation of ion sensor
JPS60115841A (en) * 1983-11-28 1985-06-22 Shimadzu Corp Ion sensor
JPS6283641A (en) * 1985-10-08 1987-04-17 Sharp Corp Sensor element
US4903099A (en) * 1987-02-09 1990-02-20 Nihon Kohden Corp Field effect transistor for use as ion sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924245A (en) * 1982-07-31 1984-02-07 Shimadzu Corp Preparation of ion sensor
JPS60115841A (en) * 1983-11-28 1985-06-22 Shimadzu Corp Ion sensor
JPH0469337B2 (en) * 1983-11-28 1992-11-05 Shimadzu Corp
JPS6283641A (en) * 1985-10-08 1987-04-17 Sharp Corp Sensor element
JPH0460549B2 (en) * 1985-10-08 1992-09-28 Sharp Kk
US4903099A (en) * 1987-02-09 1990-02-20 Nihon Kohden Corp Field effect transistor for use as ion sensor

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