JPS57194521A - Manufacture of thin film semiconductor - Google Patents

Manufacture of thin film semiconductor

Info

Publication number
JPS57194521A
JPS57194521A JP56079936A JP7993681A JPS57194521A JP S57194521 A JPS57194521 A JP S57194521A JP 56079936 A JP56079936 A JP 56079936A JP 7993681 A JP7993681 A JP 7993681A JP S57194521 A JPS57194521 A JP S57194521A
Authority
JP
Japan
Prior art keywords
gas
microwave
silicate
reaction vessel
phosphine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56079936A
Other languages
Japanese (ja)
Inventor
Masahiro Hotta
Yoshiyuki Fukumoto
Yoji Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP56079936A priority Critical patent/JPS57194521A/en
Publication of JPS57194521A publication Critical patent/JPS57194521A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain an amorphous hydro-silicon layer by a method wherein silicide gas and one or two types of gases selected among a group of hydrogen, dipolan, phosphine and inert gas are introduced into a vacuum vessel exhausted to high vacuum and low temperature plasma is made. CONSTITUTION:A substrate 30 is placed in a reaction vessel 6. High vacuum of less than 1X10<-5>Torr is made in the reaction vessel 6. A microwave from a microwave oscillator 8 reaches a microwave rediation part 5 via a waveguide 9. Silicide gas, hydrogen gas and phosphine gas are introduced into the reaction vessel 6 from gas bombs 10, 11 and 12. The introduced quantity of the silicate is such that the partial pressure of the silicate is within the range of 10<-3>- 10Torr and the silicate is expressed by formula SiH4-nXn (where X represents fluorine or chlorine and n is 0 or an integer 1-4). Low temperature plasma is generated by the microwave and amorphous silicone is deposited on the substrate 30.
JP56079936A 1981-05-25 1981-05-25 Manufacture of thin film semiconductor Pending JPS57194521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079936A JPS57194521A (en) 1981-05-25 1981-05-25 Manufacture of thin film semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079936A JPS57194521A (en) 1981-05-25 1981-05-25 Manufacture of thin film semiconductor

Publications (1)

Publication Number Publication Date
JPS57194521A true JPS57194521A (en) 1982-11-30

Family

ID=13704196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079936A Pending JPS57194521A (en) 1981-05-25 1981-05-25 Manufacture of thin film semiconductor

Country Status (1)

Country Link
JP (1) JPS57194521A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4762803A (en) * 1984-12-07 1988-08-09 Fuji Electric Co., Ltd. Process for forming crystalline films by glow discharge
US4835005A (en) * 1983-08-16 1989-05-30 Canon Kabushiki Kaishi Process for forming deposition film
JPH06268240A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Thin-film solar cell and manufacture thereof
KR100427258B1 (en) * 2001-08-11 2004-04-14 광주과학기술원 Siloxane monomer containing fluorine, and process for preparing them

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835005A (en) * 1983-08-16 1989-05-30 Canon Kabushiki Kaishi Process for forming deposition film
US4762803A (en) * 1984-12-07 1988-08-09 Fuji Electric Co., Ltd. Process for forming crystalline films by glow discharge
JPH06268240A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Thin-film solar cell and manufacture thereof
KR100427258B1 (en) * 2001-08-11 2004-04-14 광주과학기술원 Siloxane monomer containing fluorine, and process for preparing them

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