JPS5534689A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS5534689A
JPS5534689A JP10879978A JP10879978A JPS5534689A JP S5534689 A JPS5534689 A JP S5534689A JP 10879978 A JP10879978 A JP 10879978A JP 10879978 A JP10879978 A JP 10879978A JP S5534689 A JPS5534689 A JP S5534689A
Authority
JP
Japan
Prior art keywords
target
shield
same material
vessel
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10879978A
Other languages
Japanese (ja)
Inventor
Naokichi Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP10879978A priority Critical patent/JPS5534689A/en
Publication of JPS5534689A publication Critical patent/JPS5534689A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To make the formation of the high purity sputter film possible, by making the shield to be installed in the cathode of the same material as the target, or by coating the shield with the same material as the target. CONSTITUTION:The thermion emitted from the thermion emitting filament 16 is introduced into the vacuum vessel 10 and arrives at the anode 19. After evacuating the inside of the vessel 10 to high vacuum by the vacuum pump, the Ar gas for example, is introduced; hereby, the electric discharge is generated across the filament 16 and the anode 19 and the plasma is generated in the vessel 10. Under this condition, a minus voltage is impressed on the Ti target 11, for instance, in order to generate the sputtering, and the Ti film is formed on the substrate while the substrate holder 14 is being rotated. Hereupon, since the shield 12 is made of the same material as the target 11, or is coated with the same material as the target 11, even if the shield 12 receives the impact from the high energy neutral gas atom, the purity of the sputter film is never deteriorated.
JP10879978A 1978-09-04 1978-09-04 Sputtering device Pending JPS5534689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10879978A JPS5534689A (en) 1978-09-04 1978-09-04 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10879978A JPS5534689A (en) 1978-09-04 1978-09-04 Sputtering device

Publications (1)

Publication Number Publication Date
JPS5534689A true JPS5534689A (en) 1980-03-11

Family

ID=14493766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10879978A Pending JPS5534689A (en) 1978-09-04 1978-09-04 Sputtering device

Country Status (1)

Country Link
JP (1) JPS5534689A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517330A1 (en) * 1981-11-30 1983-06-03 Anelva Corp APPARATUS FOR PROJECTING METAL ON A SUBSTRATE, ESPECIALLY TYPE A MAGNETRON
JPS5995160U (en) * 1982-12-20 1984-06-28 クラリオン株式会社 sputtering device
JPH0317266A (en) * 1989-06-15 1991-01-25 Canon Inc Film forming device
JPH0432567A (en) * 1990-05-28 1992-02-04 Toppan Printing Co Ltd Sputtering method
KR100267886B1 (en) * 1997-06-18 2000-10-16 서성기 Coating layer forming method of shield and sputtering apparatus utilizing the shield and thin layer forming method utilizing the sputtering apparatus
JP2002275635A (en) * 2000-12-25 2002-09-25 Toyo Seikan Kaisha Ltd Process and apparatus for microwave plasma treatment
CN106319461A (en) * 2015-07-03 2017-01-11 三星显示有限公司 Sputtering apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517330A1 (en) * 1981-11-30 1983-06-03 Anelva Corp APPARATUS FOR PROJECTING METAL ON A SUBSTRATE, ESPECIALLY TYPE A MAGNETRON
JPS5995160U (en) * 1982-12-20 1984-06-28 クラリオン株式会社 sputtering device
JPH0317266A (en) * 1989-06-15 1991-01-25 Canon Inc Film forming device
JPH0432567A (en) * 1990-05-28 1992-02-04 Toppan Printing Co Ltd Sputtering method
KR100267886B1 (en) * 1997-06-18 2000-10-16 서성기 Coating layer forming method of shield and sputtering apparatus utilizing the shield and thin layer forming method utilizing the sputtering apparatus
JP2002275635A (en) * 2000-12-25 2002-09-25 Toyo Seikan Kaisha Ltd Process and apparatus for microwave plasma treatment
CN106319461A (en) * 2015-07-03 2017-01-11 三星显示有限公司 Sputtering apparatus

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