JPS5764984A - Wave length multiplex light receiving device - Google Patents
Wave length multiplex light receiving deviceInfo
- Publication number
- JPS5764984A JPS5764984A JP55140616A JP14061680A JPS5764984A JP S5764984 A JPS5764984 A JP S5764984A JP 55140616 A JP55140616 A JP 55140616A JP 14061680 A JP14061680 A JP 14061680A JP S5764984 A JPS5764984 A JP S5764984A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- length
- receiving device
- light
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000013307 optical fiber Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To gain a photocurrent corresponding to a received wave length by a method wherein a device making use of the photosensitivity of a chemical semiconductor surface and the character of selectively receiving certain light wave lengths of a semiconductor structure and is directly coupled with the output surface of an optical fiber unit. CONSTITUTION:A Cr deped semi-insulator GaAs substrate 8 is covered by a GaAs1-xPx(X=0-1) layer 9 that is selectively and epitaxially formed, constituting a light receiving layer. A source 10, a drain 12, a gate oxide film and gate electrode 11, and a CVD SiO2 separating layer 13 are provided, thereby constituting a wave length multiplex light receiving device that can handle 4 wave lengths. When a reverse bias is applied to the gate 11, no current is outputted to reach the drain 12 thanks to a space charge layer 14. Exposure to a light beam 15 with energy larger than that of the band gap causes a channel 16 to open, the channel 16 responding selectively to the length of light supplied. By merely coupling this receiving device, consisting of a multiplicity of photodetecting cells on a single substrate, to an optical fiber unit, a light beam with a multiplicity of wave lengths may be divided by length and detected, thereby eliminating the need for spectral dividers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55140616A JPS5764984A (en) | 1980-10-09 | 1980-10-09 | Wave length multiplex light receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55140616A JPS5764984A (en) | 1980-10-09 | 1980-10-09 | Wave length multiplex light receiving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5764984A true JPS5764984A (en) | 1982-04-20 |
Family
ID=15272843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55140616A Pending JPS5764984A (en) | 1980-10-09 | 1980-10-09 | Wave length multiplex light receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5764984A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008042754A (en) * | 2006-08-09 | 2008-02-21 | Yamaha Corp | Voice conference device |
-
1980
- 1980-10-09 JP JP55140616A patent/JPS5764984A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008042754A (en) * | 2006-08-09 | 2008-02-21 | Yamaha Corp | Voice conference device |
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