JPS54107375A - Photo detector - Google Patents
Photo detectorInfo
- Publication number
- JPS54107375A JPS54107375A JP1425678A JP1425678A JPS54107375A JP S54107375 A JPS54107375 A JP S54107375A JP 1425678 A JP1425678 A JP 1425678A JP 1425678 A JP1425678 A JP 1425678A JP S54107375 A JPS54107375 A JP S54107375A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- film
- thermally
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- -1 silane compound Chemical class 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To realize high speed and obtain a photo detector having excellent characteristics for use in optical communication, by forming a layer showing the reverse conductive type to that of substrate on the surface of a semiconductor substrate, and removing the substrate beneath the light entrance plane. CONSTITUTION:A P<-> type Si layer 2 reverse to substrate is formed on N<+> type Si substrate 1 by epitaxial growth and phosphorus is selectively diffused thermally by using a thermally oxidizing SiO2 film, and N<+> type Si layer 3 and phosphorus are similarly ion-injected and an N type Si layer 4 is formed by thermal diffusion. Using a silane compound having such a thickness that does not cause reflection to the wavelength of incident light, a layer is formed with Si2N4 film 7 by CVD. In order to shield the light from entering from the outside of the upper part of PN junction plane, an aluminum vapor deposition film 9 is provided, and the substrate is selectively removed by etching by using the thermally oxidized SiO2 film. Then, boron is thermally diffused at impurity concentration to form a P+ type Si layer 10. The incident light passing this layer is reflected by an Au film 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53014256A JPS6032812B2 (en) | 1978-02-10 | 1978-02-10 | photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53014256A JPS6032812B2 (en) | 1978-02-10 | 1978-02-10 | photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54107375A true JPS54107375A (en) | 1979-08-23 |
JPS6032812B2 JPS6032812B2 (en) | 1985-07-30 |
Family
ID=11856001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53014256A Expired JPS6032812B2 (en) | 1978-02-10 | 1978-02-10 | photodetector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6032812B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229371A (en) * | 1985-04-04 | 1986-10-13 | Kokusai Denshin Denwa Co Ltd <Kdd> | Photo diode |
JPS6218075A (en) * | 1985-07-17 | 1987-01-27 | Agency Of Ind Science & Technol | Photoelectric conversion device |
JPS63204666A (en) * | 1987-02-16 | 1988-08-24 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Radiation sensing semiconductor device |
US5223919A (en) * | 1987-02-25 | 1993-06-29 | U. S. Philips Corp. | Photosensitive device suitable for high voltage operation |
EP0601561A1 (en) * | 1992-12-08 | 1994-06-15 | Terumo Kabushiki Kaisha | Photoelectric device |
US5757057A (en) * | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
-
1978
- 1978-02-10 JP JP53014256A patent/JPS6032812B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229371A (en) * | 1985-04-04 | 1986-10-13 | Kokusai Denshin Denwa Co Ltd <Kdd> | Photo diode |
JPS6218075A (en) * | 1985-07-17 | 1987-01-27 | Agency Of Ind Science & Technol | Photoelectric conversion device |
JPS63204666A (en) * | 1987-02-16 | 1988-08-24 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Radiation sensing semiconductor device |
US4857980A (en) * | 1987-02-16 | 1989-08-15 | U.S. Philips Corp. | Radiation-sensitive semiconductor device with active screening diode |
US5223919A (en) * | 1987-02-25 | 1993-06-29 | U. S. Philips Corp. | Photosensitive device suitable for high voltage operation |
EP0601561A1 (en) * | 1992-12-08 | 1994-06-15 | Terumo Kabushiki Kaisha | Photoelectric device |
US5757057A (en) * | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
Also Published As
Publication number | Publication date |
---|---|
JPS6032812B2 (en) | 1985-07-30 |
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