JPS5759354A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5759354A JPS5759354A JP13371080A JP13371080A JPS5759354A JP S5759354 A JPS5759354 A JP S5759354A JP 13371080 A JP13371080 A JP 13371080A JP 13371080 A JP13371080 A JP 13371080A JP S5759354 A JPS5759354 A JP S5759354A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- region
- single crystal
- functioning
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form the characteristics of a resistance element with high accuracy in the semiconductor device using one part of wiring consisting of a semiconductor such as Si, to which impurities are doped, as the resistance element. CONSTITUTION:An unevenness functioning as nuclei for artificial crystal growth is formed in a region 13a in which is resistor of an oxide film 13b on a semiconductor substrate in Si, etc. must be shaped, and a non-single crystal Si film in polycrystal silicon, etc. serving as wiring connected to a diffusion region 12, etc. is formed on the unevenness. When impurities are each diffused in regions functioning as an electrode 15''c and wiring 15''b among the Si film in high concentration and in a region serving as the resistor 15''a in low concentration and energy rays having high density such as laser rays are irradiated to the region functioning as the resistor and the region is changed into a single crystal, there is no crystal grain boundary in the single crystal resistor, and diffusion velocity is also slow. Consequently, the resistor can be formed with high accuracy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13371080A JPS5759354A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13371080A JPS5759354A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5759354A true JPS5759354A (en) | 1982-04-09 |
Family
ID=15111075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13371080A Pending JPS5759354A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5759354A (en) |
-
1980
- 1980-09-27 JP JP13371080A patent/JPS5759354A/en active Pending
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