JPS5759353A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5759353A JPS5759353A JP13370980A JP13370980A JPS5759353A JP S5759353 A JPS5759353 A JP S5759353A JP 13370980 A JP13370980 A JP 13370980A JP 13370980 A JP13370980 A JP 13370980A JP S5759353 A JPS5759353 A JP S5759353A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- shaped
- impurities
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To increase the speed of the circuit operation of the semiconductor device and integrate the operation to a high degree by lowering the electric resistance of the wiring of a semiconductor such as Si to which impurities are doped in the semiconductor device using the semiconductor as a wiring material. CONSTITUTION:An insulating film is formed onto a semiconductor substrate 11 in Si, etc., openings are shaped and diffusion regions 12a, 12b, etc. are molded periodic unevenness is formed onto the insulating film 13a of a region, in which wiring must be shaped, through photo-etching, etc., and nuclei for artificial crystal growth are formed. When a non-single crystal silicon film in polycrystal silicon, etc. is shaped on these whole surfaces, impurities are diffused and changed into conductive forms, and energy rays having high density such as laser rays are irradiated to a position where wiring must be formed, impurities are activated electrically while the wiring 15a turned into a single crystal is shaped, and the electric resistance of the wiring is one half or lower of that of electrodes 15b consisting of polycrystals. A wiring pattern is etched, and coated with an insulating laer 16.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13370980A JPS5759353A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13370980A JPS5759353A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5759353A true JPS5759353A (en) | 1982-04-09 |
Family
ID=15111052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13370980A Pending JPS5759353A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5759353A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4958307A (en) * | 1987-11-20 | 1990-09-18 | Kabushiki Kaisha Toshiba | Roll mark inspection apparatus |
-
1980
- 1980-09-27 JP JP13370980A patent/JPS5759353A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4958307A (en) * | 1987-11-20 | 1990-09-18 | Kabushiki Kaisha Toshiba | Roll mark inspection apparatus |
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